Abstract: Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.

Abstract: A light emitting diode (LED) includes a p-type layer of material, an n-type layer of material and an active layer between the p-type layer and the n-type layer. A roughened layer of transparent material is adjacent one of the p-type layer of material and the n-type layer of material. The roughened layer of transparent material has a refractive index close to or substantially the same as the refractive index of the material adjacent the layer of transparent material, and may be a transparent oxide material or a transparent conducting material. An additional layer of conductive material may be between the roughened layer and the n-type or p-type layer.

Abstract: A light emitting diode (LED) package comprising a substrate with an LED chip mounted to the substrate and in electrical contact with it. An inner material covers the LED chip, and a lens covers the inner material with the lens material being harder than the inner material. An adhesive is arranged between the substrate and the lens to hold the lens to the substrate and to compensate for different coefficients of thermal expansion (CTE) between the lens and the remainder of the package. A method for forming an LED package comprises providing a substrate with a first meniscus ring on a surface of the substrate. An LED chip is mounted to the substrate, within the meniscus ring. An inner material is deposited over the LED chip, and a lens material in liquid form is deposited over the inner material. The lens material held in a hemispheric shape by the first meniscus feature and the lens material is cured making it harder than the inner material.

Abstract: A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

Abstract: An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.

Abstract: Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.

Abstract: An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. Phosphor particles are arranged in a densely packed layer within the coating at the light emitting surface, and such that the light emitting surface is in contacting relationship with the phosphor particles.

Abstract: A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 ?. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

Abstract: A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED or package to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises a LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. One embodiment of a LED package comprises a LED mounted on a substrate with an encapsulant over said LED and a composite high reflectivity layer arranged to reflect emitted light. The composite layer comprises a plurality of layers such that at least one of said plurality of layers has an index of refraction lower than the encapsulant and a reflective layer on a side of said plurality of layers opposite the LED. In some embodiments, conductive vias are included through the composite layer to allow an electrical signal to pass through the layer to the LED.

Abstract: A light emitting diode (LED) includes a p-type layer of material, an n-type layer of material and an active layer between the p-type layer and the n-type layer. A roughened layer of transparent material is adjacent one of the p-type layer of material and the n-type layer of material. The roughened layer of transparent material has a refractive index close to or substantially the same as the refractive index of the material adjacent the layer of transparent material, and may be a transparent oxide material or a transparent conducting material. An additional layer of conductive material may be between the roughened layer and the n-type or p-type layer.

Abstract: Adhesive-free assembly of the substrate and reflector components of a semiconductor die package is achieved by injection molding the reflector onto a surface of the substrate or by molding the reflector separate from the substrate and securing it in place on the substrate through deformation of a portion of the reflector. The reflector may be made reflective either by molding the reflector using a light scattering material or through the addition of a reflective element, such as a piece of foil material that is secured to the reflector. A variety of interchangeable reflective elements having different surface shapes, and thus different light reflecting properties, may be made.

Abstract: A green-shifted red solid state lighting device includes at least one green solid state light emitter arranged to stimulate emissions from at least one red lumiphor, arranged in combination with at least one blue solid state light emitter. Such device may be devoid of any yellow lumiphor arranged to be stimulated by a blue solid state light emitter. A green shifted red plus blue (GSR+B) lighting device exhibits reduced Stokes Shift losses as compared to a blue shifted yellow plus red (BSY+R) lighting device, with comparable color rendering performance and similar efficiency, enhanced color stability over a range of operating temperatures, and enhanced color rendering performance at higher correlated color temperatures. Additional solid state emitters and/or lumiphors may be provided.

Abstract: A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

Abstract: Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.

Abstract: The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.

Abstract: The present disclosure is directed to LED components, methods and systems using such components, having light emitter devices with emissions tuned to meet CRI and LER goal values at a defined CCT. These emitter devices and methods may use a combination of light emitting diodes and quantum dots to tune the emission to meet these criteria. The quantum dots may incorporate additional features to protect the quantum dots from environmental conditions and improve heat dissipation, such as coatings and thermally conductive features.

Abstract: An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.

Abstract: A high efficiency LED chip is disclosed that comprises an active LED structure comprising an active layer between two oppositely doped layers. A first reflective layer can be provided adjacent to one of the oppositely doped layers, with the first layer comprising a material with a different index of refraction than the active LED structure. The difference in IR between the active LED structure and the first reflective layer increases TIR of light at the junction. In some embodiments the first reflective layer can comprise an IR lower than the semiconductor material, increasing the amount of light that can experience TIR. Some embodiments of LED chips according to the present invention can also comprise a second reflective layer or metal layer on and used in conjunction with the first reflective layer such that light passing through the first reflective layer can be reflected by the second reflective layer.

Abstract: A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

Abstract: Methods for fabricating semiconductor devices such as LED chips with emission wavelength correction and devices fabricated using these methods. Different embodiments include sequential coating methods that provide two or more coatings or layers of conversion material over LEDs, which can be done at the wafer level. The methods are particularly applicable to fabricating LED chips that emit a warm white light, which typically requires covering LEDs with one or more wavelength conversion materials such as phosphors. In one embodiment, a base wavelength conversion material is applied to the semiconductor devices. A portion of the base conversion material is removed. At least two different tuning wavelength conversion materials are also applied to the semiconductor devices, either before or after the application of the base conversion material.