Patents by Inventor James Ibbetson

James Ibbetson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices
    Patent number: 7977686
    Abstract: A packaged light emitting device includes a carrier substrate having a top surface and a bottom surface, first and second conductive vias extending from the top surface of the substrate to the bottom surface of the substrate, and a bond pad on the top surface of the substrate in electrical contact with the first conductive via. A diode having first and second electrodes is mounted on the bond pad with the first electrode is in electrical contact with the bond pad. A passivation layer is formed on the diode, exposing the second electrode of the diode. A conductive trace is formed on the top surface of the carrier substrate in electrical contact with the second conductive via and the second electrode. The conductive trace is on and extends across the passivation layer to contact the second electrode.
    Type: Grant
    Filed: February 7, 2008
    Date of Patent: July 12, 2011
    Assignee: Cree, Inc.
    Inventors: James Ibbetson, Bernd Keller, Primit Parikh
  • LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS
    Publication number: 20110127568
    Abstract: Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
    Type: Application
    Filed: February 9, 2011
    Publication date: June 2, 2011
    Inventors: MATTHEW DONOFRIO, James Ibbetson, Zhimin Jamie Yao
  • SEMICONDUCTOR LIGHT EMITTING DEVICES WITH APPLIED WAVELENGTH CONVERSION MATERIALS AND METHODS FOR FORMING THE SAME
    Publication number: 20110089456
    Abstract: A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
    Type: Application
    Filed: December 22, 2010
    Publication date: April 21, 2011
    Inventors: Peter S. Andrews, Ronan P. Le Toquin, James Ibbetson
  • Packaged light emitting devices
    Patent number: 7928456
    Abstract: Packaged semiconductor light emitting device are provided including a reflector having a lower sidewall portion defining a reflective cavity. A light emitting device is positioned in the reflective cavity. A first quantity of cured encapsulant material having a first index of refraction is provided in the reflective cavity including the light emitting device. A second quantity of cured encapsulant material having a second index of refraction, different from the first index of refraction, is provided on the first quantity of cured encapsulant material. The first and second index of refraction are selected to provide a buried lens in the reflective cavity.
    Type: Grant
    Filed: September 4, 2007
    Date of Patent: April 19, 2011
    Assignee: Cree, Inc.
    Inventors: Peter Andrews, Thomas G. Coleman, James Ibbetson, Michael Leung, Gerald H. Negley, Eric Tarsa
  • Molded chip fabrication method
    Patent number: 7915085
    Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material.
    Type: Grant
    Filed: September 18, 2003
    Date of Patent: March 29, 2011
    Assignee: Cree, Inc.
    Inventors: Michael S. Leung, Eric J. Tarsa, James Ibbetson
  • Composite high reflectivity layer
    Patent number: 7915629
    Abstract: A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.
    Type: Grant
    Filed: December 8, 2008
    Date of Patent: March 29, 2011
    Assignee: Cree, Inc.
    Inventors: Ting Li, Monica Hansen, James Ibbetson
  • HIGH REFLECTIVITY MIRRORS AND METHOD FOR MAKING SAME
    Publication number: 20110049546
    Abstract: A composite high reflectivity mirror (CHRM) with at least one relatively smooth interior surface interface. The CHRM includes a composite portion, for example dielectric and metal layers, on a base element. At least one of the internal surfaces is polished to achieve a smooth interface. The polish can be performed on the surface of the base element, on various layers of the composite portion, or both. The resulting smooth interface(s) reflect more of the incident light in an intended direction. The CHRMs may be integrated into light emitting diode (LED) devices to increase optical output efficiency.
    Type: Application
    Filed: September 2, 2009
    Publication date: March 3, 2011
    Inventors: STEN HEIKMAN, Matthew Jacob-Mitos, Ting Li, James Ibbetson
  • SOLID STATE LIGHTING COMPONENT
    Publication number: 20110012143
    Abstract: An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.
    Type: Application
    Filed: September 16, 2010
    Publication date: January 20, 2011
    Inventors: THOMAS YUAN, Bernd Keller, James Ibbetson, Eric Tarsa, Gerald Negley
  • Semiconductor light emitting devices with applied wavelength conversion materials
    Patent number: 7863635
    Abstract: A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
    Type: Grant
    Filed: August 7, 2007
    Date of Patent: January 4, 2011
    Assignee: Cree, Inc.
    Inventors: Peter S. Andrews, Ronan P. Le Toquin, James Ibbetson
  • MOLDED CHIP FABRICATION METHOD AND APPARATUS
    Publication number: 20100323465
    Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material.
    Type: Application
    Filed: August 24, 2010
    Publication date: December 23, 2010
    Inventors: Michael S. Leung, Eric J. Tarsa, James Ibbetson
  • LIGHT EMITTING DIODES INCLUDING OPTICALLY MATCHED SUBSTRATES
    Publication number: 20100283077
    Abstract: Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.
    Type: Application
    Filed: July 13, 2010
    Publication date: November 11, 2010
    Inventors: David B. Slater, JR., Robert C. Glass, Charles M. Swoboda, Bernd Keller, James Ibbetson, Brian Thibeault, Eric J. Tarsa
  • LED WITH SUBSTRATE MODIFICATIONS FOR ENHANCED LIGHT EXTRACTION AND METHOD OF MAKING SAME
    Publication number: 20100273280
    Abstract: The surface morphology of an LED light emitting surface is changed by applying processes, such as a reactive ion etch (RIE) process to the light emitting surface. In one embodiment, the changed surface morphology takes the form of a moth-eye surface. The surface morphology created by the RIE process may be emulated using different combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching.
    Type: Application
    Filed: June 22, 2010
    Publication date: October 28, 2010
    Inventors: Max Batres, James Ibbetson, Ting Li, Adam W. Saxler
  • Solid state lighting component
    Patent number: 7821023
    Abstract: An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.
    Type: Grant
    Filed: May 23, 2008
    Date of Patent: October 26, 2010
    Assignee: Cree, Inc.
    Inventors: Thomas Yuan, Bernd Keller, James Ibbetson, Eric Tarsa, Gerald Negley
  • HIGH VOLTAGE LOW CURRENT SURFACE EMITTING LED
    Publication number: 20100252840
    Abstract: An LED chip comprising a plurality of sub-LEDs on a submount. Electrically conductive and electrically insulating features are included that serially interconnect the sub-LEDs such that an electrical signal applied to the serially interconnected sub-LEDs along the electrically conductive features spreads to the serially interconnected sub-LEDs. A via is included that is arranged to electrically couple one of the sub-LEDs to the submount. The sub-LED can be interconnected by more than one of the conductive features, with each one of the conductive features capable of spreading an electrical signal between the two of the sub-LEDs.
    Type: Application
    Filed: June 11, 2010
    Publication date: October 7, 2010
    Inventors: JAMES IBBETSON, Sten Heikman
  • Light emitting diode chip with electrical insulation element
    Publication number: 20100224890
    Abstract: A light emitting diode chip comprising a light emitting diode and a thermally conductive substrate. The light emitting diode is on the substrate with the substrate providing a thermal path from the light emitting diode through the substrate. A mounting pad is also on a substrate and an electrically insulating layer is integral to the substrate. The insulating layer electrically insulates the mounting pad from the light emitting diode. A method for fabricating a light emitting diode chip comprises providing a thermally conductive substrate, forming an electrical insulating layer integral to the substrate and forming a mounting pad on the substrate. A light emitting diode is fabricated and mounted to the substrate, with the light emitting diode electrically insulated from the mounting pad by the electrically insulating layer.
    Type: Application
    Filed: September 18, 2006
    Publication date: September 9, 2010
    Inventors: Bernd Keller, Ashay Chitnis, James Ibbetson
  • HIGH VOLTAGE LOW CURRENT SURFACE-EMITTING LED
    Publication number: 20100155746
    Abstract: A monolithic LED chip is disclosed comprising a plurality of junctions or sub-LEDs (“sub-LEDs”) mounted on a submount. The sub-LEDs are serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. Methods for fabricating a monolithic LED chip are also disclosed with one method comprising providing a single junction LED on a submount and separating the single junction LED into a plurality of sub-LEDs. The sub-LEDs are then serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of the serially interconnected sub-LEDs and the junction voltage of the sub-LEDs.
    Type: Application
    Filed: April 6, 2009
    Publication date: June 24, 2010
    Inventors: JAMES IBBETSON, Sten Heikman
  • Composite high reflectivity layer
    Publication number: 20100140635
    Abstract: A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.
    Type: Application
    Filed: December 8, 2008
    Publication date: June 10, 2010
    Inventors: James Ibbetson, Ting Li, Monica Hansen
  • Light Emitting Diode with a Dielectric Mirror having a Lateral Configuration
    Publication number: 20100140637
    Abstract: A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure.
    Type: Application
    Filed: December 8, 2008
    Publication date: June 10, 2010
    Inventors: Matthew Donofrio, John Edmond, James Ibbetson, Ting Li
  • SEMICONDUCTOR LIGHT EMITTING DIODES HAVING REFLECTIVE STRUCTURES AND METHODS OF FABRICATING SAME
    Publication number: 20090283787
    Abstract: Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described.
    Type: Application
    Filed: May 11, 2009
    Publication date: November 19, 2009
    Inventors: Matthew Donofrio, James Ibbetson, Zhimin Jamie Yao
  • LED chip
    Patent number: D616839
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: June 1, 2010
    Assignee: Cree, Inc.
    Inventors: John Edmond, David Beardsley Slater, Jr., Amber Christine Salter, Ashay Chitnis, James Ibbetson, Bernd Peter Keller