Abstract: A method is provided for locally etching certain structures formed in outer peripheral areas of field emission devices. The structures include alignment marks and bond pads, which require removal of materials deposited on the structures during manufacture.

Abstract: A node for use in a wireless communication network that facilitates alignment of the node with other nodes in the network and a method for aligning the node. The node includes mounting fixtures that enables the mounting of GPS receivers and a tiltmeter to obtain position and bearing information for the node. The node contains alignment features that enable the positioning of an optical transmitter/receiver pair in the node using the data obtained from the GPS receivers and tiltmeter.

Abstract: The present invention includes structures, lithographic mask forming solutions, mask forming methods, field emission display emitter mask forming methods, and methods of forming plural field emission display emitters. One aspect of the present invention provides a mask forming method including forming a masking layer over a surface of a substrate; screen printing plural masking particles over a surface of the masking layer; and removing at least portions of the masking layer using the masking particles as a mask. Another aspect of the present invention provides a method of forming plural field emission display emitters.

Abstract: The present invention includes structures, lithographic mask forming solutions, mask forming methods, field emission display emitter mask forming methods, and methods of forming plural field emission display emitters. One aspect of the present invention provides a mask forming method including forming a masking layer over a surface of a substrate; screen printing plural masking particles over a surface of the masking layer; and removing at least portions of the masking layer using the masking particles as a mask. Another aspect of the present invention provides a method of forming plural field emission display emitters.

Abstract: A cap layer is placed on a substrate of inexpensive glass prior to subsequent processing to form emitter tips. The cap layer substantially reduces shrinkage of the substrate, significantly improves uniform formation of silicon tips, and substantially eliminates delamination of silicon layers from the substrate.

Abstract: An optical transceiver such as used, for example, in a wireless optical network (WON), includes multiple laser sources including a first laser source configured to transmit a first output channel beam having a first optical characteristic and at least a second laser source configured to transmit a second output channel beam having a second optical characteristic; multiple detectors including a first detector configured to detect a first input channel beam having the first optical characteristic and at least a second detector configured to detect a second input channel beam having the second optical characteristic; and multiple apertures including a first aperture through which the first output channel beam and the second input channel beam pass and a second aperture through which the second output channel beam and the first input channel beam pass.

Abstract: A method for forming semiconductor devices without utilizing high temperature processing involves forming a surface porous silicon layer. The surface porous silicon layer may be removed by selective etching or it may be oxidized and then removed by selective etching. In the case of a field emission display, the porous silicon formation process is sufficiently controllable that uniform emitters may be formed. Moreover, by maintaining the structure at a temperature below the temperature at which substantial diffusion of alkaline constituents occurs, soda-lime glass may be used as a substrate for making semiconductor devices.

Abstract: The present invention includes structures, lithographic mask forming solutions, mask forming methods, field emission display emitter mask forming methods, and methods of forming plural field emission display emitters. One aspect of the present invention provides a mask forming method including forming a masking layer over a surface of a substrate; screen printing plural masking particles over a surface of the masking layer; and removing at least portions of the masking layer using the masking particles as a mask. Another aspect of the present invention provides a method of forming plural field emission display emitters.

Abstract: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.

Abstract: A method for polishing a grid of a field emission display (FED) with a polishing slurry contain very small particle of colloidal particles of amorphous silica in an alkaline medium. The method results in highly selective planarization well-suited for chemical-mechanical polishing (CMP) of the grid for the self-aligned CMP-FED fabrication process. An FED grid made according to this method is also disclosed.

Abstract: The present disclosure describes microelectronic substrate assemblies, and methods for making and using such substrate assemblies in mechanical and chemical-mechanical planarizing processes. A microelectronic substrate assembly is fabricated in accordance with one aspect of the invention by forming a critical layer in a film stack on the substrate and manipulating the critical layer to have a low compression internal stress. The critical layer, more specifically, is a layer that is otherwise in a tensile state or a high compression state without being manipulated to control the internal stress in the critical layer to be in a low compression state. The stress in the critical layer can be manipulated by changing the chemistry, temperature or energy level of the process used to deposit or otherwise form the critical layer. The stress in the critical layer can also be manipulated using heat treatments and other processes.

Abstract: The present invention includes structures, lithographic mask forming solutions, mask forming methods, field emission display emitter mask forming methods, and methods of forming plural field emission display emitters. One aspect of the present invention provides a mask forming method including forming a masking layer over a surface of a substrate; screen printing plural masking particles over a surface of the masking layer; and removing at least portions of the masking layer using the masking particles as a mask. Another aspect of the present invention provides a method of forming plural field emission display emitters.

Abstract: A field emission device is disclosed having a buffer layer positioned between an underlying cathode conductive layer and an overlying resistor layer. The buffer layer consists of substantially undoped amorphous silicon. Any pinhole defects or discontinuities that extend through the resistor layer terminate at the buffer layer, thereby preventing the problems otherwise caused by pinhole defects. In particular, the buffer layer prevents breakdown of the resistor layer, thereby reducing the possibility of short circuiting. The buffer layer further reduces the risk of delamination of various layers or other irregularities arising from subsequent processing steps. Also disclosed are methods of making and using the field emission device having the buffer layer.

Abstract: A semiconductor device for use in field emission displays includes a substrate formed from a semiconductor material, glass, soda lime, or plastic. A first layer of a conductive material is formed on the substrate. A second layer of microcrystalline silicon is formed on the first layer. This layer has characteristics that do not fluctuate in response to conditions that vary during the operation of the field emission display, particularly the varying light intensity from the emitted electrons or from the ambient. One or more cold-cathode emitters are formed on the second layer.

Abstract: A method for forming an etch mask is described. In particular, an etch mask is formed using masking particles positionally restrained by a matrix medium. Either the masking particles or the matrix medium is more magnetically conductive with respect to the other. A magnetic field is applied for making a random distribution of the masking particles less random. Consequently, agglomeration of the masking particles is reduced. Masking particles with submicron dimensions may be used for providing features of less than a micron. The mask formed may be an etch mask employed in forming a field emitter tip for a field emission display.

Abstract: A method for forming spacers for a display device includes steps of contacting a substrate of one of a cathode and a faceplate substrate with a member, drawing the member from the substrate to form a filament, and detaching the member from the filament. The filament can be further planarized to a desired height and shape. The filament extends to the other of the cathode and faceplate.

Abstract: In one aspect, the invention includes a method of fabricating a flat panel evacuated display. An oxidizable material layer is formed over a substrate upper surface. The oxidizable material has an upper surface and is provided as a plurality of separate discrete elements. A layer of sacrificial material is formed over the oxidizable material upper surface and over intervening regions of the substrate between the separate discrete elements. The sacrificial material is selectively removable relative to the oxidizable material. The layer of sacrificial material is planarized to remove the sacrificial material from over the oxidizable material upper surface. A plurality of spacers are bonded to the oxidizable material upper surface. The sacrificial material is removed from between the separate discrete elements.

Abstract: A substrate is placed on a charging surface, to which a first voltage is applied. Etch-resistant dry particles are placed in a cup in a nozzle to which a second voltage, less than the first voltage, is applied. A carrier gas is directed through the nozzle, which projects the dry particles out of the nozzle toward the substrate. The particles pick up a charge from the potential applied to the nozzle and are electrostatically attracted to the substrate. The particles adhere to the substrate, where they form an etch mask. The substrate is etched and the particles are removed. Emitter tips for a field emission display may be formed in the substrate.

Abstract: The present disclosure describes microelectronic substrate assemblies, and methods for making and using such substrate assemblies in mechanical and chemical-mechanical planarizing processes. A microelectronic substrate assembly is fabricated in accordance with one aspect of the invention by forming a critical layer in a film stack on the substrate and manipulating the critical layer to have a low compression internal stress. The critical layer, more specifically, is a layer that is otherwise in a tensile state or a high compression state without being manipulated to control the internal stress in the critical layer to be in a low compression state. The stress in the critical layer can be manipulated by changing the chemistry, temperature or energy level of the process used to deposit or otherwise form the critical layer. The stress in the critical layer can also be manipulated using heat treatments and other processes.

Abstract: A method for forming semiconductor devices without utilizing high temperature processing involves forming a surface porous silicon layer. The surface porous silicon layer may be removed by selective etching or it may be oxidized and then removed by selective etching. In the case of a field emission display, the porous silicon formation process is sufficiently controllable that uniform emitters may be formed. Moreover, by maintaining the structure at a temperature below the temperature at which substantial diffusion of alkaline constituents occurs, soda-lime glass may be used as a substrate for making semiconductor devices.