Patents by Inventor James J. Alwan

James J. Alwan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6068878
    Abstract: A method of forming a layer of particulates on a substrate includes fastening the substrate to a support and submerging at least a portion of the substrate in a liquid. The liquid has particulates suspended on an upper surface thereof. The submerged substrate is moved relative to the suspended particulates to form a layer of the particulates supported on the substrate. After the layer of particulates is formed on the substrate, the substrate is removed from the support.
    Type: Grant
    Filed: September 3, 1998
    Date of Patent: May 30, 2000
    Assignee: Micron Technology, Inc.
    Inventor: James J. Alwan
  • Patent number: 6010385
    Abstract: A method for forming spacers for a display device includes steps of contacting a substrate of one of a cathode and a faceplate substrate with a member, drawing the member from the substrate to form a filament, and detaching the member from the filament. The filament can be further planarized to a desired height and shape. The filament extends to the other of the cathode and faceplate.
    Type: Grant
    Filed: March 22, 1999
    Date of Patent: January 4, 2000
    Assignee: Micron Technology, Inc.
    Inventor: James J. Alwan
  • Patent number: 6010917
    Abstract: A method for fabricating microelectronic deices in which an interconnect layer is electrically isolated from large protuberances that project from a lower conductive layer to a desired endpoint of a chemical-mechanical planarization process. The lower conductive layer is covered with an insulating material to form an insulator layer that generally follows the contour of the lower conductive layer and any large protuberances. A highly conductive interconnect material is then deposited over the insulator layer to form an interconnect layer that generally follows the contour of the insulator layer. The interconnect layer may be deposited directly on the insulator layer, or it may be deposited on an intermediate layer between the interconnect layer and the insulator layer. After the upper conductive layer is deposited, the insulator layer and the upper conductive layer are planarized with a chemical-mechanical planarization process to a desired endpoint.
    Type: Grant
    Filed: October 15, 1996
    Date of Patent: January 4, 2000
    Assignee: Micron Technology, Inc.
    Inventors: James J. Alwan, Kevin Tjaden, David A. Cathey
  • Patent number: 6004179
    Abstract: In one aspect, the invention includes a method of fabricating a flat panel evacuated display. An oxidizable material layer is formed over a substrate upper surface. The oxidizable material has an upper surface and is provided as a plurality of separate discrete elements. A layer of sacrificial material is formed over the oxidizable material upper surface and over intervening regions of the substrate between the separate discrete elements. The sacrificial material is selectively removable relative to the oxidizable material. The layer of sacrificial material is planarized to remove the sacrificial material from over the oxidizable material upper surface. A plurality of spacers are bonded to the oxidizable material upper surface. The sacrificial material is removed from between the separate discrete elements.
    Type: Grant
    Filed: October 26, 1998
    Date of Patent: December 21, 1999
    Assignee: Micron Technology, Inc.
    Inventor: James J. Alwan
  • Patent number: 5994834
    Abstract: An emitter structure for a field emission display includes: a substrate (100) having a top surface; an address line (142) embedded in the substrate (100) and having an upper surface substantially coplanar with the top surface of the substrate (100); and an emitter site (152) having an emitter (154) superjacent to the top surface of the substrate (100) apart from the address line (142) and having a contact (153) having a first portion coupled to the emitter (142) and a second portion coupled to the address line (142). The substrate (100) may further include a base layer (110), and a dielectric layer (120), and the contact (153) may further act as a resistor to limit the current to the emitter (154).
    Type: Grant
    Filed: August 22, 1997
    Date of Patent: November 30, 1999
    Assignee: Micron Technology, Inc.
    Inventors: James J. Alwan, Kevin Tjaden
  • Patent number: 5902491
    Abstract: A method for removing a surface protrusion projecting from a layer of a first material deposited on a surface of a substrate. In accordance with one embodiment of the invention, a layer of a second material is applied on the layer of first material. A sufficient quantity of the second material is removed to expose the surface protrusion. The first material exposed through the surface protrusion is then removed.
    Type: Grant
    Filed: October 7, 1996
    Date of Patent: May 11, 1999
    Assignee: Micron Technology, Inc.
    Inventors: Craig M. Carpenter, James J. Alwan
  • Patent number: 5888112
    Abstract: A method for forming spacers for a display device includes steps of contacting a substrate of one of a cathode and a faceplate substrate with a member, drawing the member from the substrate to form a filament, and detaching the member from the filament. The filament can be further planarized to a desired height and shape. The filament extends to the other of the cathode and faceplate.
    Type: Grant
    Filed: December 31, 1996
    Date of Patent: March 30, 1999
    Assignee: Micron Technology, Inc.
    Inventor: James J. Alwan
  • Patent number: 5871870
    Abstract: A mask and a method for forming a mask on a surface of an underlying layer of material used in semiconductor device manufacturing. The mask is a mixture of mask particles and spacer particles. The spacer particles space the mask particles apart from one another to control the distance and the uniformity of the distribution of mask particles across the surface of the underlying layer. The spacer particles and mask particles have different physical properties that allow the spacer particles to be selectively removed from the surface of the underlying layer. The spacer particles are preferably removed from the surface of the underlying layer by selectively etching the spacer particles from the underlying layer. After the spacer particles are removed from the underlying layer, the mask particles remain on the underlying layer to provide spaced apart mask elements on the surface of the underlying layer.
    Type: Grant
    Filed: August 19, 1997
    Date of Patent: February 16, 1999
    Assignee: Micron Technology, Inc.
    Inventor: James J. Alwan
  • Patent number: 5817373
    Abstract: A substrate is placed on a charging surface, to which a first voltage is applied. Etch-resistant dry particles are placed in a cup in a nozzle to which a second voltage, less than the first voltage, is applied. A carrier gas is directed through the nozzle, which projects the dry particles out of the nozzle toward the substrate. The particles pick up a charge from the potential applied to the nozzle and are electrostatically attracted to the substrate. The particles adhere to the substrate, where they form an etch mask. The substrate is etched and the particles are removed. Emitter tips for a field emission display may be formed in the substrate.
    Type: Grant
    Filed: December 12, 1996
    Date of Patent: October 6, 1998
    Assignee: Micron Display Technology, Inc.
    Inventors: David A. Cathey, Kevin Tjaden, James J. Alwan
  • Patent number: 5811020
    Abstract: A non-photlithographic, physical patterning process, which is useful for selectively etching of a substrate, is provided. The process comprises electrostatically charging liquid droplets which are selectively etchable with respect to the substrate, dispersing the droplets onto substrate in a pattern; and etching the substrate using the droplets as a mask.
    Type: Grant
    Filed: July 23, 1997
    Date of Patent: September 22, 1998
    Assignee: Micron Technology, Inc.
    Inventor: James J. Alwan
  • Patent number: 5804910
    Abstract: A cold cathode structure, useful for field emission displays, is disclosed. A thin resistive silicon film is disposed on a glass substrate; conductive emitter tips are disposed on top thereof. An alloy of amorphous silicon and amorphous carbon is used for the emitter tips. The proportion of the carbon in the alloy increases, gradually or abruptly, from the base to the top of the emitter tips.The carbon gradient is implemented during the process step, in which an n-type silicon layer is formed from which the emitter tips are made in subsequent masking and etching steps. The amount of carbon makes the emitter tips harder and gives lower work function at greater stability. Moreover, the carbon gradient allows for additional sharpening of the emitter tips.
    Type: Grant
    Filed: January 18, 1996
    Date of Patent: September 8, 1998
    Assignee: Micron Display Technology, Inc.
    Inventors: Kevin Tjaden, James J. Alwan
  • Patent number: 5695658
    Abstract: A non-photolithographic, physical patterning process, which is useful for selectively etching of a substrate, is provided. The process comprises electrostatically charging liquid droplets which are selectively etchable with respect to the substrate, dispersing the droplets onto substrate in a pattern; and etching the substrate using the droplets as a mask.
    Type: Grant
    Filed: March 7, 1996
    Date of Patent: December 9, 1997
    Assignee: Micron Display Technology, Inc.
    Inventor: James J. Alwan
  • Patent number: 5695809
    Abstract: A method of manufacturing phosphor screens is disclosed. The method uses "sol-gel" for disposing a thin film of phosphor on a transparent substrate. The thin film of phosphor is applied in continuous form or in the form of an accurate dot pattern. The rastering of said dot pattern is performed either by screen printing before annealing the sol-gel, or by selective laser curing of a continuous thin film and washing off the non-cured portions. The phosphor screens are useful as monochrome or as full-color faceplates of field emission displays or cathode ray tubes.
    Type: Grant
    Filed: November 14, 1995
    Date of Patent: December 9, 1997
    Assignee: Micron Display Technology, Inc.
    Inventors: Surjit S. Chadha, James J. Alwan
  • Patent number: 5676853
    Abstract: A mask and a method for forming a mask on a surface of an underlying layer of material used in semiconductor device manufacturing. The mask is a mixture of mask particles and spacer particles. The spacer particles space the mask particles apart from one another to control the distance and the uniformity of the distribution of mask particles across the surface of the underlying layer. The spacer particles and mask particles have different physical properties that allow the spacer particles to be selectively removed from the surface of the underlying layer. The spacer particles are preferably removed from the surface of the underlying layer by selectively etching the spacer particles from the underlying layer. After the spacer particles are removed from the underlying layer, the mask particles remain on the underlying layer to provide spaced apart mask elements on the surface of the underlying layer.
    Type: Grant
    Filed: May 21, 1996
    Date of Patent: October 14, 1997
    Assignee: Micron Display Technology, Inc.
    Inventor: James J. Alwan