Abstract: The present disclosure generally relates to magnetic recording heads of magnetic recording devices. To protect and lubricate magnetic elements of the magnetic recording heads (e.g., reader sensors), a coating of carbon is applied to the magnetic element. When there are defects in the carbon coating, the sensor is exposed to air and may corrode causing reader sensor failure. Protrusions and/or recesses may form on the MFS of the sensor when materials that are too hard (e.g., CoHf or Ru) or too soft (e.g., IrMn) are used in the spacer or capping layer of the sensor. By laminating, co-sputtering, or using an alloy with hard materials (e.g., Ta, Ru, and/or Hf) and/or soft materials (e.g., Al, Ti, Cr, and/or Ni) in the spacer and capping layer of the sensor, the formation of protrusion and recesses in the reader sensor may be mitigated.

Abstract: The present disclosure generally relates to a two dimensional magnetic recording (TDMR) read head. The read head comprises a lower shield, a lower sensor disposed on the lower shield, a middle shield disposed over the lower sensor, an upper sensor disposed on the middle shield, and an upper shield disposed over the upper sensor. In one embodiment, the middle shield is a simple pinned shield comprising a first ferromagnetic (FM) layer, an antiferromagnetic (AFM) layer disposed on the first FM layer, and a second FM layer disposed on the AFM layer, and the upper shield is a synthetic antiferromagnetic (SAF) pinned shield comprising a first pinning layer, an antiferromagnetic coupling (AFC) layer disposed on the first pinning layer, and a second pinning layer disposed on the AFC layer. In another embodiment, the middle shield is a SAF pinned shield and the upper shield is a simple pinned shield.

Abstract: The present disclosure generally relates to a dual free layer (DFL) read head with a shaped rear bias (RB) and methods of forming thereof. A shaped rear hard bias (RHB) or a shaped rear soft bias (RSB) can induce large transverse magnetic anisotropy and align bias element magnetization, which in turn contributes to overcoming polarity flip or negative amplitude observed in DFL read heads. However, often, the removal time of exposed portions of RB are greater than the removal time of exposed portions of the DFL sensor. Thus, depositing a stitch layer over a DFL sensor to adjust the etching rate of the DFL sensor to match the etching rate of the RB during the removal processes provides sufficient time to remove exposed portions of the RB without damaging the DFL sensor, thereby improving shaped RHB or RSB control and reliability in DFL sensors.

Abstract: The present disclosure generally relates to a two-dimensional magnetic recording (TDMR) read head. The TDMR read head comprises a first sensor, a second sensor, and a middle shield (MS) disposed between the first and second sensors. The MS comprises a seed layer, an IrMn layer disposed on the seed layer, an insertion layer comprising Ru or CoFe disposed on the IrMn layer, a first NiFe layer having a pinned magnetization, and a cap layer disposed over the first NiFe layer. In one embodiment, the MS further comprises an Ru layer disposed on the first NiFe layer and a second NiFe layer disposed on the Ru layer, the second NiFe layer having a pinned magnetization in a direction antiparallel to the first NiFe layer. The insertion layer comprising Ru decreases an exchange energy of the MS. The insertion layer comprising CoFe increases an exchange energy of the MS.

Abstract: The present disclosure generally relates to a two-dimensional magnetic recording (TDMR) read head. The TDMR read head comprises a first sensor, a second sensor, and a middle shield (MS) disposed between the first and second sensors. The MS comprises a seed layer, an IrMn layer disposed on the seed layer, an insertion layer comprising Ru or CoFe disposed on the IrMn layer, a first NiFe layer having a pinned magnetization, and a cap layer disposed over the first NiFe layer. In one embodiment, the MS further comprises an Ru layer disposed on the first NiFe layer and a second NiFe layer disposed on the Ru layer, the second NiFe layer having a pinned magnetization in a direction antiparallel to the first NiFe layer. The insertion layer comprising Ru decreases an exchange energy of the MS. The insertion layer comprising CoFe increases an exchange energy of the MS.

Abstract: The present disclosure generally relates to topological insulator (TI) based spin-orbit torque (SOT) devices. The SOT device comprises an amorphous seed layer, a textured seed layer having a (001) orientation disposed on the amorphous seed layer, an insulating layer disposed over the textured seed layer, a diffusion barrier layer having a (001) orientation disposed on the insulating layer, a BiSb layer having a (012) orientation disposed on the diffusion barrier layer, an interlayer having a (001) orientation disposed on the BiSb layer, and a ferromagnetic layer having a (001) orientation disposed on the interlayer. The diffusion barrier layer and the interlayer each individually comprises one or more of NiAl and RuAl, and prevent Sb migration from the BiSb layer while transmitting the (001) orientation to the ferromagnetic layer.

Abstract: The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases exchange coupling field, and in turn, less magnetic noise of such devices. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure which may grow epitaxial on BCC (110) or FCC (111) textures, meaning that the (110) or (111) plane is parallel to the surface of MR device substrate. Further, amorphous layers may be inserted into the device structure to reset the growth texture of the device to a (001), (110), or (111) texture in order to promote the growth of tunneling barrier layers or antiferromagnetic (AF) pinning layers.

Abstract: Embodiments of the present disclosure generally relate to a read sensor utilized in a read head. The read sensor comprises an amorphous break layer disposed on a shield, a seed layer disposed on the amorphous break layer, a first ferromagnetic layer disposed on the seed layer, a barrier layer disposed on the first ferromagnetic layer, and a second ferromagnetic layer disposed on the barrier layer. The amorphous break layer comprises CoFeBTa, the seed layer comprises RuAl, and the barrier layer comprises a semiconductor material, such as ZnSe, ZnTe, ZnO, CuSe, or CuInGaSe. The semiconductor barrier layer reduces the resistance-area product of the read sensor. The amorphous break layer breaks the texture between the shield, which has a FCC texture, and the seed layer, which has a BCC texture. The BCC texture of the seed layer is then inherited by the remaining layers disposed over the seed layer.

Abstract: The present disclosure generally relates to a spin torque element disposed between a main pole and a shield in a magnetic recording head. The shield could be a trailing shield, a side shield, or a leading shield. The spin torque element includes a dual layer spin transfer structure that is spaced from magnetic layers on either side using spacer layers. One magnetic layer that faces a positive polarizer has a positive polarization while another magnetic layer facing the negative polarizer has a negative polarization. As such, torque in the spacer layers is maximized when the direction of the magnetization in the STL is opposite to the gap field.

Abstract: The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases stability to magnetic fields, and in turn, results in lower magnetic noise of the device. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure with (001) texture, meaning that the (001) plane is parallel to the surface of MR device substrate. The first ferromagnetic (FM1) layer and a part of the second ferromagnetic (FM2) layer also have the (001) texture. An amorphous layer in a second ferromagnetic (FM2) layer can reset the growth texture of the MR device to a (111) texture in order to promote the growth of an antiferromagnetic (AF) pinning layer.

Abstract: Embodiments of the present disclosure generally relate to a read sensor utilized in a read head. The read sensor comprises an amorphous break layer disposed on a shield, a seed layer disposed on the amorphous break layer, a first ferromagnetic layer disposed on the seed layer, a barrier layer disposed on the first ferromagnetic layer, and a second ferromagnetic layer disposed on the barrier layer. The amorphous break layer comprises CoFeBTa, the seed layer comprises RuAl, and the barrier layer comprises a semiconductor material, such as ZnSe, ZnTe, ZnO, CuSe, or CuInGaSe. The semiconductor barrier layer reduces the resistance-area product of the read sensor. The amorphous break layer breaks the texture between the shield, which has a FCC texture, and the seed layer, which has a BCC texture. The BCC texture of the seed layer is then inherited by the remaining layers disposed over the seed layer.

Abstract: The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases exchange coupling field, and in turn, less magnetic noise of such devices. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure which may grow epitaxial on BCC (110) or FCC (111) textures, meaning that the (110) or (111) plane is parallel to the surface of MR device substrate. Further, amorphous layers may be inserted into the device structure to reset the growth texture of the device to a (001), (110), or (111) texture in order to promote the growth of tunneling barrier layers or antiferromagnetic (AF) pinning layers.

Abstract: The present disclosure generally relates to magnetoresistive (MR) devices. The MR device comprises a synthetic antiferromagnetic (SAF) layer that increases stability to magnetic fields, and in turn, results in lower magnetic noise of the device. The MR device comprises a first ferromagnetic (FM1) layer and a second ferromagnetic (FM2) layer, in between which is an SAF spacer of RuAl alloy having a B2 crystalline structure with (001) texture, meaning that the (001) plane is parallel to the surface of MR device substrate. The first ferromagnetic (FM1) layer and a part of the second ferromagnetic (FM2) layer also have the (001) texture. An amorphous layer in a second ferromagnetic (FM2) layer can reset the growth texture of the MR device to a (111) texture in order to promote the growth of an antiferromagnetic (AF) pinning layer.

Abstract: Embodiments of the present disclosure generally relate to spintronic devices, and more specifically to self-cooling spintronic devices. In an embodiment, a device is provided. The device includes a spintronic device having a first side and a second side opposite the first side, a first layer disposed on the first side, and a second layer disposed on the second side, the first layer having a Seebeck coefficient that is different from a Seebeck coefficient of the second layer.

Abstract: The present disclosure generally relates to a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield of the magnetic recording head. The spintronic device comprises a multilayer spacer layer comprising a Cu layer in contact with a spin torque layer and a spin transparent texture layer disposed on the Cu layer, the spin transparent texture layer comprising AgSn or AgZn. A multilayer notch comprising a CoFe layer is disposed over the spin transparent texture layer of the multilayer spacer layer and a Heusler alloy layer is disposed on the CoFe layer, the Heusler alloy layer comprising CoMnGe, CoFeGe, or CoFeMnGe. The multilayer spacer layer and the multilayer notch result in the spintronic device having a high spin polarization and a reduced critical current.

Abstract: The present disclosure generally relates to a magnetic recording device having a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield at a media facing surface. The spintronic device comprises a spin torque layer (STL) and a multilayer seed layer disposed in contact with the STL. The spintronic device may further comprise a field generation layer disposed between the trailing shield and the STL. The multilayer seed layer comprises an optional high etch rate layer, a heat dissipation layer comprising Ru disposed in contact with the optional high etch rate layer, and a cooling layer comprising Cr disposed in contact with the heat dissipation layer and the main pole. The high etch rate layer comprises Cu and has a high etch rate to improve the shape of the spintronic device during the manufacturing process.

Abstract: The present disclosure generally relates to a magnetic recording device having a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield at a media facing surface. The spintronic device comprises a spin torque layer (STL) and a multilayer seed layer disposed in contact with the STL. The spintronic device may further comprise a field generation layer disposed between the trailing shield and the STL. The multilayer seed layer comprises an optional high etch rate layer, a heat dissipation layer comprising Ru disposed in contact with the optional high etch rate layer, and a cooling layer comprising Cr disposed in contact with the heat dissipation layer and the main pole. The high etch rate layer comprises Cu and has a high etch rate to improve the shape of the spintronic device during the manufacturing process.

Abstract: The present disclosure generally relates to a magnetic recording head comprising a spintronic device. The spintronic device is disposed between a main pole and a trailing shield of the magnetic recording head. The spintronic device comprises a multilayer spacer layer comprising a Cu layer in contact with a spin torque layer and a spin transparent texture layer disposed on the Cu layer, the spin transparent texture layer comprising AgSn or AgZn. A multilayer notch comprising a CoFe layer is disposed over the spin transparent texture layer of the multilayer spacer layer and a Heusler alloy layer is disposed on the CoFe layer, the Heusler alloy layer comprising CoMnGe, CoFeGe, or CoFeMnGe. The multilayer spacer layer and the multilayer notch result in the spintronic device having a high spin polarization and a reduced critical current.

Abstract: Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.

Abstract: Aspects of the present disclosure generally relate to a spintronic device for use in a magnetic media drive, a magnetoresistive random access memory device, a magnetic sensor, or a magnetic recording write head. The spintronic device comprises a multilayer structure having a negative anisotropic field and a negative spin polarization. The multilayer structure comprises a plurality of layers, each layer of the plurality of layers comprising a first sublayer comprising Fe and a second sublayer comprising Co. At least one of the first sublayer and the second sublayer comprises one or more of Cr, V, and Ti. The first and second sublayers are alternating. The negative anisotropic field of the multilayer structure is between about ?0.5 T to about ?0.8 T, and an effective magnetization of the multilayer structure is between about 2.4 T to about 2.8 T.