Abstract: Certain embodiments are directed to a spin torque oscillator (STO) device in a microwave assisted magnetic recording (MAMR) device. The magnetic recording head includes a seed layer, a spin polarization layer over the seed layer, a spacer layer over the spin polarization layer, and a field generation layer is over the spacer layer. In one embodiment, the seed layer comprises a tantalum alloy layer. In another embodiment, the seed layer comprises a template layer and a damping reduction layer over the template layer. In yet another embodiment, the seed layer comprises a texture reset layer, a template layer on the texture reset layer, and a damping reduction layer on the template layer.

Abstract: A magnetic recording write head and system has a spin-torque oscillator (STO) located between the write head's write pole and trailing shield. The STO's ferromagnetic free layer is located near the write pole with a multilayer seed layer between the write pole and the free layer. The STO's nonmagnetic spacer layer is between the free layer and the STO's ferromagnetic polarizer. The polarizer may be the trailing shield of the write head, one or more separate polarizer layers, or combinations thereof. The STO electrical circuitry causes electron flow from the write pole to the trailing shield. The multilayer seed layer removes the spin polarization of electrons from the write pole, which enables electrons reflected from the polarizer layer to become spin polarized, which creates the spin transfer torque on the magnetization of the free layer. The multilayer seed layer includes a Mn or a Mn-alloy layer.

Abstract: A magnetic recording write head and system has a spin-torque oscillator (STO) located between the write head's write pole and trailing shield. The STO's ferromagnetic free layer is located near the write pole with a multilayer seed layer between the write pole and the free layer. The STO's nonmagnetic spacer layer is between the free layer and the STO's ferromagnetic polarizer. The polarizer may be the trailing shield of the write head, one or more separate polarizer layers, or combinations thereof. The STO electrical circuitry causes electron flow from the write pole to the trailing shield. The multilayer seed layer removes the spin polarization of electrons from the write pole, which enables electrons reflected from the polarizer layer to become spin polarized, which creates the spin transfer torque on the magnetization of the free layer. The multilayer seed layer includes a Mn or a Mn-alloy layer.

Abstract: A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic free layer near the substrate, a ferromagnetic polarizing layer and a nonmagnetic spacer layer between the free layer and the polarizing layer. A multilayer structure is located between the substrate and the free layer. The multilayer structure includes a metal or metal alloy seed layer for the free layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the free layer and thus reduces undesirable damping of the oscillation of the free layer's magnetization by the seed layer.

Abstract: Aspects of the present disclosure relate to spin torque oscillator (STO) and methods, such as spin torque oscillators used in write heads of magnetic media drives. The STO includes a seed layer, a spin polarization layer (SPL), a spacer layer, a field generation layer (FGL), a capping layer. An insertion layer is disposed within the STO. The insertion layer increases the negative Hk. The insertion layer may be located between the FGL and the capping layer, as well as between the FGL and the spacer layer. For a reverse STO, the insertion layer may be disposed between the FGL and the seed layer, as well as between the FGL and the spacer layer.

Abstract: A free layer comprising a bilayer (e.g., a first and a second layer) with an amorphous insertion layer in between the bilayer. The free layer includes a ferromagnetic nanolayer between the bilayer and a barrier layer. The magnetostriction of the free layer is tunable by varying the thicknesses of each of the first and the second layers. The free layer can be part of a magnetoresistive device with a reference layer or with another free layer.

Abstract: In one embodiment, a write head includes a spin polarization layer (SPL) over a seed layer. A spacer layer is over the SPL. A trailing shield is over the spacer layer. The spacer layer forms a first interface between the spacer layer and the trailing shield and forms a second interface between the spacer layer and the SPL. The first interface has an area larger than an area of the second interface. In another embodiment, a write head includes a SPL over a spacer layer. A capping layer is over the SPL. A trailing shield is over the capping layer. The spacer layer forms a first interface between the spacer layer and the main pole and forms a second interface between the spacer layer and the SPL. The first interface has an area larger than an area of the second interface.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a trailing shield, a main pole, an STO disposed between the trailing shield and the main pole, and a non-magnetic conductive structure adjacent to the main pole and in contact with the STO. The STO includes an FGL and an SPL, and the FGL is disposed between the main pole and the SPL. The FGL includes a side extending over the main pole and at least a portion of the non-magnetic conductive structure. With the FGL disposed proximate to the main pole and over at least a portion of the non-magnetic conductive structure, current crowding and disturbance from the trailing shield are minimized.

Abstract: A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a trailing shield, a main pole, an STO disposed between the trailing shield and the main pole, and a non-magnetic conductive structure adjacent to the main pole and in contact with the STO. The STO includes an FGL and an SPL, and the FGL is disposed between the main pole and the SPL. The FGL includes a side extending over the main pole and at least a portion of the non-magnetic conductive structure. With the FGL disposed proximate to the main pole and over at least a portion of the non-magnetic conductive structure, current crowding and disturbance from the trailing shield are minimized.

Abstract: A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic polarizer layer near the substrate, a ferromagnetic free layer, and a nonmagnetic spacer layer between the ferromagnetic polarizer layer and the ferromagnetic free layer. A multilayer structure is located between the substrate and the ferromagnetic polarizer layer. The multilayer structure includes a metal or metal alloy seed layer for the ferromagnetic polarizer layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the write pole and thus reduces undesirable spin pumping of the ferromagnetic polarizer layer.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a trailing shield, a main pole, an STO disposed between the trailing shield and the main pole, and a non-magnetic conductive structure adjacent to the main pole and in contact with the STO. The STO includes an FGL and an SPL, and the FGL is disposed between the main pole and the SPL. The FGL includes a side extending over the main pole and at least a portion of the non-magnetic conductive structure. With the FGL disposed proximate to the main pole and over at least a portion of the non-magnetic conductive structure, current crowding and disturbance from the trailing shield are minimized.

Abstract: Spin transfer torque (STT) devices with multilayer seed layers that can be used in magnetic recording and memory are provided. One such STT device includes a substrate, and a stack of layers formed on the substrate, where the stack includes a first seed layer directly on the substrate and including Cr, a second seed layer on the first seed layer and including Ta, a ferromagnetic free layer on the second seed layer; a ferromagnetic polarizing layer, and a nonmagnetic spacer layer between the free layer and the polarizing layer. One such method includes fabricating the STT device.

Abstract: Embodiments of the present disclosure generally relate to a spin torque oscillator device (STO) including a high damping field generation layer or a damping enhancing capping layer for use in microwave assisted magnetic recording (MAMR) write heads. In one embodiment, a STO device for a MAMR write head includes a spin polarization layer, a spacer layer over the spin polarization layer, and a field generation layer over the spacer layer. The field generation layer has a damping in a range from about 0.5% to about 20%.

Abstract: A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or, more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.

Abstract: A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic free layer near the substrate, a ferromagnetic polarizing layer and a nonmagnetic spacer layer between the free layer and the polarizing layer. A multilayer structure is located between the substrate and the free layer. The multilayer structure includes a metal or metal alloy seed layer for the free layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the free layer and thus reduces undesirable damping of the oscillation of the free layer's magnetization by the seed layer.

Abstract: A magnetic recording write head and system has a spin-torque oscillator (STO) located between the write head's write pole and trailing shield. The STO's ferromagnetic free layer is located near the write pole with a multilayer seed layer between the write pole and the free layer. The STO's nonmagnetic spacer layer is between the free layer and the STO's ferromagnetic polarizer. The polarizer may be the trailing shield of the write head or a separate polarizer layer. The STO electrical circuitry causes electron flow from the write pole to the trailing shield. The multilayer seed layer removes the spin polarization of electrons from the write pole, which enables electrons reflected from the polarizer layer to become spin polarized, which creates the spin transfer torque on the magnetization of the free layer. The multilayer seed layer includes Mn or a Mn-alloy layer between one or more metal or metal alloy films.

Abstract: A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic free layer near the substrate, a ferromagnetic polarizing layer and a nonmagnetic spacer layer between the free layer and the polarizing layer. A multilayer structure is located between the substrate and the free layer. The multilayer structure includes a metal or metal alloy seed layer for the free layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the free layer and thus reduces undesirable damping of the oscillation of the free layer's magnetization by the seed layer.

Abstract: A magnetic recording write head and system has a spin-torque oscillator (STO) located between the write head's write pole and trailing shield. The STO's ferromagnetic free layer is located near the write pole with a multilayer seed layer between the write pole and the free layer. The STO's nonmagnetic spacer layer is between the free layer and the STO's ferromagnetic polarizer. The polarizer may be the trailing shield of the write head or a separate polarizer layer. The STO electrical circuitry causes electron flow from the write pole to the trailing shield. The multilayer seed layer removes the spin polarization of electrons from the write pole, which enables electrons reflected from the polarizer layer to become spin polarized, which creates the spin transfer torque on the magnetization of the free layer. The multilayer seed layer includes Mn or a Mn-alloy layer between one or more metal or metal alloy films.

Abstract: A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic free layer near the substrate, a ferromagnetic polarizing layer and a nonmagnetic spacer layer between the free layer and the polarizing layer. A multilayer structure is located between the substrate and the free layer. The multilayer structure includes a metal or metal alloy seed layer for the free layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the free layer and thus reduces undesirable damping of the oscillation of the free layer's magnetization by the seed layer.