Abstract: A spin transfer torque (STT) device has a free ferromagnetic layer that includes a Heusler alloy layer and a template layer beneath and in contact with the Heusler alloy layer. The template layer may be a ferromagnetic alloy comprising one or more of Co, Ni and Fe and the element X, where X is selected from one or more of Ta, B, Hf, Zr, W, Nb and Mo. A CoFe nanolayer may be formed below and in contact with the template layer. The STT device may be a spin-torque oscillator (STO), like a STO incorporated into the write head of a magnetic recording disk drive. The STT device may also be a STT in-plane or perpendicular magnetic tunnel junction (MTJ) cell for magnetic random access memory (MRAM). The template layer reduces the critical current density of the STT device.

Abstract: Spin transfer torque (STT) devices with multilayer seed layers that can be used in magnetic recording and memory are provided. One such STT device includes a substrate, and a stack of layers formed on the substrate, where the stack includes a first seed layer directly on the substrate and including Cr, a second seed layer on the first seed layer and including Ta, a ferromagnetic free layer on the second seed layer; a ferromagnetic polarizing layer, and a nonmagnetic spacer layer between the free layer and the polarizing layer. One such method includes fabricating the STT device.

Abstract: In one embodiment, a system includes a sensor, the sensor having a free layer, a ferromagnetic spin sink layer spaced from the free layer, the spin sink layer being operative to reduce a spin-induced damping in the free layer during operation of the sensor, and a nonmagnetic spacer layer positioned between the free layer and the spin sink layer, the spacer layer having a long spin-diffusion length.

Abstract: In one embodiment, a system includes a sensor, the sensor having a free layer, a ferromagnetic spin sink layer spaced from the free layer, the spin sink layer being operative to reduce a spin-induced damping in the free layer during operation of the sensor, and a nonmagnetic spacer layer positioned between the free layer and the spin sink layer, the spacer layer having a long spin-diffusion length.

Abstract: In one embodiment, a system includes a sensor, the sensor having a free layer, a ferromagnetic spin sink layer spaced from the free layer, the spin sink layer being operative to reduce a spin-induced damping in the free layer during operation of the sensor, and a nonmagnetic spacer layer positioned between the free layer and the spin sink layer, the spacer layer having a long spin-diffusion length.

Abstract: In one embodiment, a system includes a sensor, the sensor having a free layer, a ferromagnetic spin sink layer spaced from the free layer, the spin sink layer being operative to reduce a spin-induced damping in the free layer during operation of the sensor, and a nonmagnetic spacer layer positioned between the free layer and the spin sink layer, the spacer layer having a long spin-diffusion length.

Abstract: In one embodiment, a system includes a sensor, the sensor having a free layer, a ferromagnetic spin sink layer spaced from the free layer, the spin sink layer being operative to reduce a spin-induced damping in the free layer during operation of the sensor, and a nonmagnetic spacer layer positioned between the free layer and the spin sink layer, the spacer layer having a long spin-diffusion length.

Abstract: In one embodiment, a system includes a sensor, the sensor having a free layer, a ferromagnetic spin sink layer spaced from the free layer, the spin sink layer being operative to reduce a spin-induced damping in the free layer during operation of the sensor, and a nonmagnetic spacer layer positioned between the free layer and the spin sink layer, the spacer layer having a long spin-diffusion length.

Abstract: In one embodiment, a system includes a sensor, the sensor having a free layer, a ferromagnetic spin sink layer spaced from the free layer, the spin sink layer being operative to reduce a spin-induced damping in the free layer during operation of the sensor, and a nonmagnetic spacer layer positioned between the free layer and the spin sink layer, the spacer layer having a long spin-diffusion length.

Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.

Abstract: The embodiments disclosed generally relate to a magnetic read head having a recessed antiferromagnetic layer and a recessed pinned magnetic layer. The recessed pinned magnetic layer is only partially recessed from the MFS, but the recess amount is the same amount as the antiferromagnetic layer. The recess is between about 50 nm and about 200 nm. Processing the pinned magnetic layer and the antiferromagnetic layer and its seed layers at an oblique angle results in an increase in the anisotropy field.

Abstract: A tunneling magnetoresistance (TMR) device, like a magnetic recording disk drive read head, has a nitrogen-containing layer between the MgO barrier layer and the free and/or reference ferromagnetic layers that contain boron. In one embodiment the free ferromagnetic layer includes a boron-containing layer and a trilayer nanolayer structure between the MgO barrier layer and the boron-containing layer. The trilayer nanolayer structure includes a thin Co, Fe or CoFe first nanolayer in contact with the MgO layer, a thin FeN or CoFeN second nanolayer on the first nanolayer and a thin Co, Fe or CoFe third nanolayer on the FeN or CoFeN nanolayer between the FeN or CoFeN nanolayer and the boron-containing layer. If the reference ferromagnetic layer also includes a boron-containing layer then a similar trilayer nanolayer structure may be located between the boron-containing layer and the MgO barrier layer.

Abstract: The embodiments generally relate to a read head in a magnetic recording head. The read head utilizes a sensor structure having a pinned magnetic structure with a magnetic field, a barrier layer disposed on top of the pinned magnetic structure, a free layer disposed on top of the barrier layer, and an interlayer coupling field canceling layer disposed on top of the free layer. The interlayer coupling field canceling layer has a cancelling magnetic field pinned anti-parallel the magnetic field of the pinned magnetic structure.

Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head with pinned layers extending to the ABS of the read head and magnetically coupled with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. Portions of the antiferromagnetic layer and a magnetic layer that are extending to the ABS are removed, exposing a shield. A shielding material is formed on the exposed shield and a seed layer is formed on the shield and on or over a portion of the remaining antiferromagnetic layer. A pinned layer structure is formed on the seed layer and the magnetic layer.

Abstract: The embodiments of the present invention relate to a magnetic read head with pinned layers extending to the ABS of the read head and in contact with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. The recessed antiferromagnetic layer may be disposed above or below the pinned layer structure and provides a pinning field to prevent amplitude flipping in head operation. In these embodiments of the present invention, the read gap of the sensor, that is the distance between the highly permeable, magnetically soft upper and lower shield layers at the ABS, is reduced by the thickness of the antiferromagnetic layer.

Abstract: The embodiments disclosed generally relate to a read head in a magnetic recording head. The read head utilizes a sensor structure having: a pinned magnetic structure recessed from a media facing surface; and a reader gap structure. The reader gap structure has a spacer layer recessed from the media facing surface and disposed on top of the pinned magnetic structure, a recessed first free layer partially recessed from the media facing surface and disposed on top of the barrier layer, a second free layer extending to the media facing surface an disposed on top of the barrier layer, and a cap layer extending to the media facing surface disposed atop the second free layer. The pinned magnetic structure, the spacer, and the first free layer have a common face which is on an angle relative to the media facing surface.

Abstract: Embodiments of the present invention generally relate to a magnetic head having a sensor structure comprising a pinned layer, a spacer layer, a free layer and a capping structure. The free layer has a topmost layer comprising CoB and the capping structure comprises an X layer, where X is an element such as Hf, Zr, Ti, V, Nb, or Ta.

Abstract: Embodiments of the present invention generally relate to a magnetic head having a sensor structure comprising a pinned layer, a spacer layer, a free layer and a capping structure. The free layer has a topmost layer comprising CoB and the capping structure comprises an X layer, where X is an element such as Hf, Zr, Ti, V, Nb, or Ta.

Abstract: The embodiments of the present invention relate to a magnetic read head with pinned layers extending to the ABS of the read head and in contact with an antiferromagnetic layer that is recessed in relation to the ABS of the read head. The recessed antiferromagnetic layer may be disposed above or below the pinned layer structure and provides a pinning field to prevent amplitude flipping in head operation. In these embodiments of the present invention, the read gap of the sensor, that is the distance between the highly permeable, magnetically soft upper and lower shield layers at the ABS, is reduced by the thickness of the antiferromagnetic layer.

Abstract: A method for manufacturing a magnetoresistive sensor having improved pinned layer stability at small track widths. The method includes providing a substrate, and depositing a plurality of sensor layers. A layer of material that is resistant to removal by chemical mechanical polishing (CMP stop layer) and an antireflective coating layer are deposited. A photoresist mask is formed on the antireflective layer, and a reactive ion etch (RIE) is performed to remove portions of the ion mill resistant mask that are not covered by the photoresist mask, the RIE being performed in a plasma chamber having a platen, the performing the RIE further comprising applying a platen power of at least 70 W. An ion milling is performed to remove a portion of the sensor layers, the ion milling being terminating before all of the sensor materials have been removed.