Abstract: A magnetic head assembly has a read head that includes a sensor wherein the sensor includes a self-pinned antiparallel (AP) pinned layer structure, a ferromagnetic free layer structure that has a magnetic moment that is free to rotate in response to signal fields and a spacer layer which is located between the free layer and AP pinned layer structures. The self-pinned AP pinned layer structure includes first and second antiparallel (AP) pinned layers, an antiparallel coupling (APC) layer located between and interfacing the first and second AP pinned layers wherein the second AP pinned layer is located between the first AP pinned layer and the spacer layer. The first AP pinned layer is composed of cobalt platinum chromium (CoPtCr).

Abstract: In one illustrative example of the invention, a spin valve sensor of a magnetic head has a sensor stack structure which includes a free layer structure and an antiparallel (AP) pinned layer structure separated by a spacer layer. A capping layer structure formed over the sensor stack structure includes a layer of cobalt (e.g. pure cobalt, oxidized cobalt, or cobalt-iron) as well as a layer of tantalum formed over it. Advantageously, the cobalt layer in the capping layer structure enhances the GMR and soft magnetic properties for thinner freelayer structures while maintaining a desirable slightly negative magnetostriction.

Abstract: In one illustrative example of the invention, a spin valve sensor includes a free layer structure; an antiparallel (AP) pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer structure and the AP pinned layer structure. The AP pinned layer structure includes a first AP pinned layer; a second AP pinned layer; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layer. One of the first and the second AP pinned layers consists of cobalt and the other one includes cobalt-iron. The pure cobalt may be provided in the first AP pinned layer or the second AP pinned layer. Advantageously, the use of cobalt in one of the AP pinned layers increases the ?r/R of the spin valve sensor.

Abstract: In one illustrative embodiment of the invention, a spin valve sensor of a magnetic head has a free layer structure; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer structure and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer; a second AP pinned layer; an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. At least one of the first and the second AP pinned layers is made of cobalt having no iron content. The other AP pinned layer may be formed of cobalt, cobalt-iron, or other suitable material. The use of cobalt in the AP self-pinned layer structure increases its magnetostriction to increase the self-pinning effect. Preferably, the first AP pinned layer is cobalt-iron and the second AP pinned layer is cobalt which provides for both an increase in magnetostriction and magnetoresistive coefficient ?r/R of the sensor.

Abstract: A method for improving hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a first layer of silicon and a second layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.

Abstract: The magnetic head of the present invention includes a magnetoresistive read head element in which a magnetic bias layer is deposited across the surface of the wafer above the free magnetic layer. Central portions of the biasing layer that correspond to the read head track width are oxidized to essentially remove the magnetic moment of the bias layer material in those central locations. An oxygen diffusion barrier layer is then deposited upon the oxidized central portions of the biasing layer to prevent diffusion or migration of oxygen from the oxidized central regions of the biasing layer. An insulation layer, a second magnetic shield layer and further structures of the magnetic head are subsequently fabricated.

Abstract: A magnetoresistive sensor having bias stabilization tabs includes a protective cap layer. The protective cap layer prevents oxidation, avoids potential damage from using ion milling for oxidation removal, and lowers parasitic resistance. In one embodiment, a bias layer, having a central portion with quenched magnetic moment, is formed over the free layer with an intervening coupling layer. A disk drive is provided with the magnetoresistive sensor including a protective cap layer.

Abstract: A spin valve sensor includes a spacer layer which is located between a free layer and an antiparallel (AP) pinned layer structure wherein the AP pinned layer structure includes an antiparallel coupling layer which is located between and interfaces first and second AP pinned layers with the second AP pinned layer interfacing the spacer layer. Each of the first and second AP pinned layers is composed of cobalt iron (CoFe) wherein the iron (Fe) content in the cobalt iron (CoFe) of one of the first and second AP pinned layers is greater than the iron (Fe) content in the cobalt iron (CoFe) in the other one of the first and second AP pinned layers.

Abstract: In one illustrative example, a method of making a read sensor of a magnetic head involves forming a barrier structure which surrounds a central mask formed over a plurality of read sensor layers; etching the read sensor layers to form the read sensor below the mask; and depositing, with use of the mask and the barrier structure, hard bias and lead layers to form around the read sensor. The barrier structure may be formed by, for example, depositing one or more barrier structure layers over the read sensor layers and performing a photolithography process. The barrier structure physically blocks materials being deposited at relatively low angles (e.g. angles at or below 71 degrees) so as to reduce their formation far underneath the mask (e.g. when using a bridged mask), which could otherwise form an electrical short, and/or to improve the symmetry of the deposited materials around the read sensor.

Abstract: A lead overlay magnetic sensor for use in a disk drive is provided having a protective cap layer disposed between the electrical leads and the sensor. The protective cap layer is preferably formed from ruthenium, rhodium, or other suitable material. The sensors thus formed have low resistance between the electrical leads and the sensor and also have well defined magnetic trackwidths.

Abstract: A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer, and forming a first layer of a carbon composition above the active area of the free layer. A layer of resist is formed above the first layer of carbon composition. A bias layer is formed above the tab areas of the free layer, the bias layer being operative to substantially pin magnetic moments of the tab areas of the free layer. Leads are formed above the bias layer. A second layer of carbon composition is formed above the tab areas of the free layer. Any material above a plane extending parallel to portions of the second layer of carbon composition above the tab areas are removed using chemical-mechanical polishing. Any remaining carbon composition is removed.

Abstract: An apparatus having improved hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a layer of silicon and a layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.

Abstract: A dual spin valve giant magnetoresistance (GMR) sensor having two spin valves with the second spin valve being self-biased is disclosed herein. According to the present invention a dual spin valve system is disclosed wherein the first of the two spin valves in the dual spin valve element is pinned through exchange coupling, i.e., a first anti-ferromagnetic pinning layer and a first ferromagnetic pinned layer structure are exchange coupled for pinning the first magnetic moment of the first ferromagnetic pinned layer structure in a first direction. The second of the two spin valves in the dual spin valve system is self-pinned. The self-pinned spin valve does not use any anti-ferromagnetic layers to pin the magnetization of the pinned layers.

Abstract: In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.

Abstract: A giant magnetoresistance (GMR) head for magnetic storage systems, the GMR head having a free layer with improved soft magnetic properties while retaining giant magnetoresistance (GMR) effects. The free layer comprises an alloy comprising Cox, Fey, and Cuz, wherein x, y, and z represent the atomic weight percentage of Co, Fe, and Cu, respectively.

Abstract: A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer, and forming a first layer of a carbon composition above the active area of the free layer. A layer of resist is formed above the first layer of carbon composition. A bias layer is formed above the tab areas of the free layer, the bias layer being operative to substantially pin magnetic moments of the tab areas of the free layer. Leads are formed above the bias layer. A second layer of carbon composition is formed above the tab areas of the free layer. Any material above a plane extending parallel to portions of the second layer of carbon composition above the tab areas are removed using chemical-mechanical polishing. Any remaining carbon composition is removed.

Abstract: A sputtering system is provided with a substrate and a sputtering material layer that are located in a sputtering chamber. The sputtering material layer has a sputtering surface where atoms of the material are sputtered and the substrate has a forming surface with a site where atoms of the sputtered material are to be formed. The sputtering material layer has a sputtering center which is located at a center of the atoms to be sputtered and the aforementioned site has a periphery with a forming center at a center of the periphery. The sputtering center is offset from the forming center so that shadowing at outer extremities of photoresist masks near the periphery of the substrate is minimized.

Abstract: A spin valve sensor includes a spacer layer which is located between a free layer and an antiparallel (AP) pinned layer structure wherein the AP pinned layer structure includes an antiparallel coupling layer which is located between and interfaces first and second AP pinned layers with the second AP pinned layer interfacing the spacer layer. Each of the first and second AP pinned layers is composed of cobalt iron (CoFe) wherein the iron (Fe) content in the cobalt iron (CoFe) of one of the first and second AP pinned layers is greater than the iron (Fe) content in the cobalt iron (CoFe) in the other one of the first and second AP pinned layers.

Abstract: A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer, and forming a first layer of a carbon composition above the active area of the free layer. A layer of resist is formed above the first layer of carbon composition. A bias layer is formed above the tab areas of the free layer, the bias layer being operative to substantially pin magnetic moments of the tab areas of the free layer. Leads are formed above the bias layer. A second layer of carbon composition is formed above the tab areas of the free layer. Any material above a plane extending parallel to portions of the second layer of carbon composition above the tab areas are removed using chemical-mechanical polishing. Any remaining carbon composition is removed.

Abstract: In one illustrative example, a method of making a read sensor of a magnetic head involves forming a barrier structure which surrounds a central mask formed over a plurality of read sensor layers; etching the read sensor layers to form the read sensor below the mask; and depositing, with use of the mask and the barrier structure, hard bias and lead layers to form around the read sensor. The barrier structure may be formed by, for example, depositing one or more barrier structure layers over the read sensor layers and performing a photolithography process. The barrier structure physically blocks materials being deposited at relatively low angles (e.g. angles at or below 71 degrees) so as to reduce their formation far underneath the mask (e.g. when using a bridged mask), which could otherwise form an electrical short, and/or to improve the symmetry of the deposited materials around the read sensor.