Abstract: Illustrative acoustic transducers are provided. A monolithic semiconductor layer defines a plate, two or more flexible extensions and at least a portion of a support structure. Acoustic pressure transferred to the plate results in tensile strain of the flexible extensions. The flexible extensions exhibit varying electrical characteristics responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristics and processed for further use.

Abstract: Acoustic transducer means are provided. A monolithic semiconductor layer defines a plate, a pair of oppositely disposed torsional hinges, a flexible extension and at least a portion of a support structure. Acoustic pressure communicated to the plate results in tensile strain of the flexible extension. The flexible extension provides a varying electrical characteristic responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristic of the flexible extension.

Abstract: Acoustic transducer means are provided. A monolithic semiconductor layer defines a plate, a pair of oppositely disposed torsional hinges, a flexible extension and at least a portion of a support structure. Acoustic pressure communicated to the plate results in tensile strain of the flexible extension. The flexible extension provides a varying electrical characteristic responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristic of the flexible extension.

Abstract: Illustrative acoustic transducers are provided. A monolithic semiconductor layer defines a plate, two or more flexible extensions and at least a portion of a support structure. Acoustic pressure transferred to the plate results in tensile strain of the flexible extensions. The flexible extensions exhibit varying electrical characteristics responsive to the tensile strain. An electric signal corresponding to the acoustic pressure can be derived from the varying electrical characteristics and processed for further use.

Abstract: Systems, methodologies, and other embodiments associated with a micro-electrical-mechanical system (MEMS) Fabry-Perot interferometric device (FPID) are described. Fabricating a MEMS FPID may include fabricating a pixel plate and a reflector plate so a Fabry-Perot cavity is defined therebetween. Fabrication may include producing a capacitor plate that facilitates electrostatically moving the pixel plate. Fabrication may include producing electrical connections between plates and producing circuitry to control plate voltages to facilitate creating an electrostatic force between plates. The MEMS FPID may include stops fabricated from a conductive material and circuitry for maintaining the stops and plates at an electrical potential that will yield a zero electric field contact event.

Abstract: Embodiments of the present invention pertain to an electronic portion of a MEMs ion gauge with ion collectors bowed out of plane to form a three dimensional arrangement and a method for forming an electronic portion of a MEMs ion gauge with ion collectors bowed out of plane to form a three dimensional arrangement. In one embodiment, an ion gauge substrate is formed. The electronic portion of the MEMs ion gauge is assembled by coupling a plurality of ion collectors with the ion gauge substrate, wherein the coupling of the plurality of ion collectors with the ion gauge substrate further comprises performing an operation that causes the plurality of ion collectors to be bowed out of plane to form a three dimensional arrangement.

Abstract: A micro-electro mechanical light modulator device includes a movable reflective plate, a fixed partial reflective plate, an optical gap defined between the reflective plate and the fixed plate, and an actuator configured to move the reflective plate through an operating range wherein a neutral state position of the reflective plate approximately corresponds to a black state value of the optical gap.

Abstract: An electronic device for at least partially displaying a pixel of an image, the device comprising first and second reflectors defining an optical cavity therebetween, the optical cavity being selective of an electromagnetic wavelength at an intensity by optical interference, the device having a concentric control structure comprising at least an inner and an outermost electrode, the optical cavity being controlled only by the inner electrode.

Abstract: A system and method bond wafers using localized induction heating. One or more induction micro-heaters are formed with a first substrate to be bonded. A second substrate is positioned in intimate contact with the induction micro-heaters. An alternating magnetic field is generated to induce a current in the induction micro-heaters, to form one or more bonds between the first substrate and the second substrate.

Abstract: A micro-electro mechanical light modulator device includes a movable reflective plate, a fixed partial reflective plate, an optical gap defined between the reflective plate and the fixed plate, and an actuator configured to move the reflective plate through an operating range wherein a neutral state position of the reflective plate approximately corresponds to a black state value of the optical gap.

Abstract: A micro-electro mechanical light modulator device includes a movable reflective plate, a fixed partial reflective plate, an optical gap defined between the reflective plate and the fixed plate, and an actuator configured to move the reflective plate through an operating range wherein a neutral state position of the reflective plate approximately corresponds to a black state value of the optical gap.

Abstract: A storage device having a read/write mechanism including a cantilever portion. The cantilever portion includes a non-single-crystal silicon body portion and a single crystal silicon tip.

Abstract: A composite partially reflecting element of a Fabry-Perot interferometer includes a transparent plate having a surface facing toward the optical gap of the interferometer, a partially reflecting layer disposed on the surface of the transparent plate facing toward the optical gap, and at least one protective layer on at least one side of the partially reflecting layer.

Abstract: A micro-fabricated device, includes a support structure having an aperture formed therein, and a device substrate disposed within the aperture. The micro-fabricated device further includes a thermally isolating structure thermally coupling the device substrate to the support structure. The thermally isolating structure includes at least one n-doped region and at least one p-doped region formed on or in the thermally isolating structure and separated from each other. In addition, the thermally isolating structure includes an electrical interconnect connecting at least one n-doped region and at least one p-doped region, forming an integrated thermoelectric device.

Abstract: For one embodiment, a reflection is reduced to substantially zero regardless of a wavelength of incident light that produced the reflection.

Abstract: Systems, methodologies, and other embodiments associated with a micro-electrical-mechanical system (MEMS) Fabry-Perot interferometric device (FPID) are described. Fabricating a MEMS FPID may include fabricating a pixel plate and a reflector plate so a Fabry-Perot cavity is defined therebetween. Fabrication may include producing a capacitor plate that facilitates electrostatically moving the pixel plate. Fabrication may include producing electrical connections between plates and producing circuitry to control plate voltages to facilitate creating an electrostatic force between plates. The MEMS FPID may include stops fabricated from a conductive material and circuitry for maintaining the stops and plates at an electrical potential that will yield a zero electric field contact event.

Abstract: A hermetically sealed area includes a substrate having microelectronics thereon. A desiccant is operatively disposed within the hermetically sealed area. An equipotential region is substantially maintained around the desiccant.

Abstract: A structured material is transferred to a substrate. A release film is applied to a carrier. A material is deposited on a surface of the release film. The material is processed to form the structured material. The structured material is coupled to the substrate. The release film is exposed to reduce adhesion strength between the release film and the carrier, and the carrier and the release film are removed from the structured material.

Abstract: An electronic light modulator device for at least partially displaying a pixel of an image, the device comprising first and second reflectors defining an optical cavity therebetween, the optical cavity being selective of an electromagnetic wavelength at an intensity by optical interference, the device having at least first and second optical states, at least one of the optical states being tunable and the other not tunable.

Abstract: A semiconductor package includes a substrate having a first surface portion in a cavity. The first surface portion includes an artificially formed grass structure. The package includes a getter film formed over the grass structure.