Abstract: Tracking circuitry may be used to determine if commands and/or command sequences include illegal commands and/or illegal command sequences. If the commands and/or command sequences include illegal commands and/or illegal command sequences, the tracking circuitry may activate signals that prevent execution of the commands and/or notice of the detected illegal commands and/or command sequences.

Abstract: Methods, apparatuses and systems related to managing access to a memory device are described. A memory device includes fuses and latches for storing a repair segment locator and a repair address for each repair of one or more defective memory cells. A segment-address determination circuit generate an active segment address based on the repair address according to the repair segment locator and an address for a read or a write operation. A comparator circuitry is configured to determine whether the active segment address matches the address for the read or the write operation for replacing the one or more defective memory cells with the plurality of redundant cells when the address for the read/write operation corresponds to the one or more defective memory cells.

Abstract: Methods, systems, and devices for staggered refresh counters for a memory device are described. The memory device may include a set of memory dies each coupled with a common command and address (CA) bus and each including a respective refresh counter. In response to a refresh command received over the CA bus, each memory die may refresh a set of memory cells based on a value output by the respective refresh counter for the memory die. The refresh counters for at least two of the memory dies of the memory device may be offset such that they indicate different values when a refresh command is received over the CA bus, and thus at least two of the memory dies may refresh memory cells in different sections of their respective arrays. Offsets between refresh counters may be based on different fuse settings associated with the different memory dies.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as a volatile memory by erasing or degrading data in the event of a changed power condition such as a power-loss event, a power-off event, or a power-on event. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to detect a changed power condition of the memory device, and to erase or degrade data at the one or more addresses in response to detecting the changed power condition.

Abstract: Memory with partial bank refresh is disclosed herein. In one embodiment, a memory system includes a memory controller and a memory device operably connected to the memory controller. The memory device includes (i) a memory array having a memory bank with a plurality of memory cells arranged in a plurality of memory rows and (ii) circuitry. In some embodiments, the circuitry is configured to disable at least one memory row of the memory bank from receiving refresh commands such that memory cells of the at least one memory row are not refreshed during refresh operations of the memory device. In some embodiments, the memory controller is configured to track memory rows that include utilized memory cells and/or to write data to the memory rows in accordance with a programming sequence of the memory device.

Abstract: Methods of operating a number of memory devices are disclosed. A method may include adjusting a count of a refresh address counter of at least one memory device of a number of memory devices such that the count of the refresh address counter of the at least one memory device is offset from a count of a refresh address counter of at least one other memory device of the number of memory devices. The method may also include receiving, at each of the number of memory devices, a refresh command. Further, the method may include refreshing, at each of the number of memory devices, a row of memory cells indicated by the count of an associated refresh address counter. Related systems and memory modules are also described.

Abstract: Embodiments of the disclosure are drawn to apparatuses, systems, methods, and memories that are capable of performing pattern matching operations within a memory device. The pattern matching operations may be performed on data stored within the memory based on a pattern stored in a register. The result of the pattern matching operation may be provided by the memory. The data on which the pattern matching operation is performed may not be output from the memory during the pattern matching operation.

Abstract: Memory devices are disclosed. A memory device may include a memory array including a number of memory cells partitioned into a number of memory segments. Each of the number of memory segments may include a redundant memory-cell group configurable to be accessed instead of a defective memory-cell group of the memory segment. The memory device may also include a set of latches configurable to indicate that a redundant memory-cell group of a memory segment of the number of memory segments is to be accessed instead of a defective memory-cell group of the memory segment. The set of latches may include segment latches configurable to indicate the memory segment or a status of the set of latches. The set of latches may also include address latches configurable to indicate the defective memory-cell group within the memory segment. Related systems and methods are also disclosed.

Abstract: Embodiments of the disclosure are drawn to apparatuses, systems, methods, and memories that are capable of performing pattern matching operations within a memory device. The pattern matching operations may be performed on data stored within the memory based on a pattern stored in a register. The result of the pattern matching operation may be provided by the memory. The data may be retrieved from a memory array for the pattern matching operation by a read operation, a refresh operation, an error correction operation, and/or a pattern matching operation. The data may be retrieved from incoming data input lines instead of or in addition to the memory array. How the data is stored or retrieved for pattern matching operations may be controlled by a memory controller.

Abstract: Provided herein are memory devices, systems including memory devices, and methods of operating memory devices in which multiple counters are provided to permit memory refresh commands greater freedom in targeting subsets of the memory device for data refresh operations. In one embodiment, a memory device is provided, comprising a plurality of memory banks, and circuitry configured to (i) store a plurality of values, each of the plurality of values corresponding to one of the plurality of memory banks; (ii) refresh first data stored in a first one of the plurality of memory banks; and (iii) update a first one of the plurality of values corresponding to the first one of the plurality of memory banks based at least in part on refreshing the first data.

Abstract: Methods, systems, and devices for adjustable column address scramble using fuses are described. A testing device may detect a first error in a first column plane of a memory array and a second error in a second column plane of the memory array. The testing device may identify a first column address of the first column plane associated with the first error and a second column address of the second column plane based on detecting the first error and the second error. The testing device may determine, for the first column plane, a configuration for scrambling column addresses of the first column plane to different column addresses of the first column plane. In some cases, the testing device may perform a fuse blow of a fuse associated with the first column plane to implement the determined configuration.

Abstract: Methods, systems, and devices for phase charge sharing are described. In some memory systems or memory devices, one or more decoders may be used to bias access lines of a memory die. The decoders may transfer voltage or current between a first conductive line of the decoder and a second conductive line of the decoder via a shorting device. Transferring the voltage or current may be performed as part of or in association with an operation (e.g., an activate or pre-charge operation) to access one or more memory cells of the memory die. In some examples, the decoders may transfer voltage or current between a first conductive line of a decoder associated with a first refresh activity and a second conductive line of the decoder associated with a second refresh activity via a shorting device.

Abstract: Methods, systems, and devices for voltage adjustment based on, for example, pending refresh operations are described. A memory device may periodically perform refresh operations to refresh volatile memory cells and may at times postpone performing one or more refresh operations. A memory device may determine a quantity of pending (e.g., postponed) refresh operations, such as by determining a quantity of refresh intervals that have elapsed without receiving or executing a refresh command, among other methods. A memory device may pre-emptively adjust (or cause to be adjusted) a supply voltage associated with the memory device or memory device component based on the quantity of pending refresh operations to prepare for the current demand associated with the performing the one or more pending refresh operations. For example, the memory device may increase a supply voltage associated with one or more components to prepare for performing multiple pending refresh operations.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for staggering the timing of skipped refresh operations on a memory. Memory cells of memories may need to periodically perform refresh operations. In some instances, auto-refresh operations may be periodically skipped when charge retention characteristics of the memory cells of the memory exceed the auto-refresh frequency. To reduce peak current draw during refresh operations, the skipped refresh operations may be staggered across different portions of the memory. In one example, the skipped refresh operation may be staggered in time among memory dies of the memory to limit a number of memory dies that are performing an auto-refresh operation to a maximum number. In another example, the skipped refresh operation may be staggered in time among memory banks of a single memory array to limit a number of memory banks that are performing an auto-refresh operation to a maximum number.

Abstract: Methods, systems, and devices for refresh-related activation in memory are described. A memory device may conduct a refresh operation to preserve the integrity of data. A refresh operation may be associated with a refresh time where the memory device is unable to execute or issue any commands (e.g., access commands). By posting (e.g., saving) one or more commands and/or row addresses during the refresh time, the memory device may be configured to execute the saved commands and/or re-open one or more rows associated with the saved row addresses at a later time (e.g., upon completion of the refresh operation). Accordingly, fewer commands may be issued to activate the memory cells after the refresh time.

Abstract: Methods, apparatuses and systems related to managing access to a memory device are described. A memory device includes a plurality of banks that each include (1) a plurality of memory cells and (2) a plurality of redundant cells configured to replace one or more target memory cells in the plurality of memory cells. A set of shared fuses and latches may be used to store a row address for each repair that may be implemented in one of the plurality of banks. A shared match circuit coupled to the set of shared latches and the plurality of memory banks may be configured to at least partially implement a row repair for the row address for a bank associated with a commanded operation.

Abstract: A memory device is provided. The memory device comprises a memory array and circuitry configured to determine one or more settings for the memory array corresponding to a powered-on state of the memory device, to store the one or more settings in a non-volatile memory location, and in response to returning to the powered-on state from a reduced-power state, to read the one or more settings from the non-volatile memory location.

Abstract: Memory with partial bank refresh is disclosed herein. In one embodiment, a memory system includes a memory controller and a memory device operably connected to the memory controller. The memory device includes (i) a memory array having a memory bank with a plurality of memory cells arranged in a plurality of memory rows and (ii) circuitry. In some embodiments, the circuitry is configured to disable at least one memory row of the memory bank from receiving refresh commands such that memory cells of the at least one memory row are not refreshed during refresh operations of the memory device. In some embodiments, the memory controller is configured to track memory rows that include utilized memory cells and/or to write data to the memory rows in accordance with a programming sequence of the memory device.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as a volatile memory by erasing or degrading data in the event of a changed power condition such as a power-loss event, a power-off event, or a power-on event. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to detect a changed power condition of the memory device, and to erase or degrade data at the one or more addresses in response to detecting the changed power condition.

Abstract: Embodiments of the disclosure are drawn to apparatuses and methods for staggering the timing of targeted refresh operations. A memory device may include a number of memory banks, at least some of which may be simultaneously entered into a refresh mode. A given memory bank may perform an auto-refresh operation or a targeted refresh operation, which may draw less power than the auto-refresh operation. The timing of the targeted refresh operations may be staggered between the refreshing memory banks, such that a portion of the refreshing memory banks are performing a targeted refresh operation simultaneously with a portion of the refreshing memory banks performing an auto-refresh operation.