Patents by Inventor James S. Speck

James S. Speck has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ALUMINUM GALLIUM NITRIDE BARRIERS AND SEPARATE CONFINEMENT HETEROSTRUCTURE (SCH) LAYERS FOR SEMIPOLAR PLANE III-NITRIDE SEMICONDUCTOR-BASED LIGHT EMITTING DIODES AND LASER DIODES
    Publication number: 20110243172
    Abstract: A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.
    Type: Application
    Filed: April 5, 2011
    Publication date: October 6, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: You-Da Lin, Hiroaki Ohta, Shuji Nakamura, Steven P. DenBaars, James S. Speck
  • PLANAR NONPOLAR GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES
    Publication number: 20110237054
    Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the <000-1> direction is 0.75° or greater miscut and less than 27° miscut towards the <000-1> direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.
    Type: Application
    Filed: June 3, 2011
    Publication date: September 29, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Kenji Iso, Hisashi Yamada, Makoto Saito, Asako Hirai, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • REACTOR DESIGNS FOR USE IN AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
    Publication number: 20110220013
    Abstract: Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.
    Type: Application
    Filed: November 4, 2009
    Publication date: September 15, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Siddha Pimputkar, Derrick S. Kamber, James S. Speck, Shuji Nakamura
  • USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
    Publication number: 20110223092
    Abstract: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-Ill nitride into said fluid.
    Type: Application
    Filed: November 4, 2009
    Publication date: September 15, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Siddha Pimputkar, Derrick S. Kamber, James S. Speck, Shuji Nakamura
  • CONTROLLING RELATIVE GROWTH RATES OF DIFFERENT EXPOSED CRYSTALLOGRAPHIC FACETS OF A GROUP-III NITRIDE CRYSTAL DURING THE AMMONOTHERMAL GROWTH OF A GROUP-III NITRIDE CRYSTAL
    Publication number: 20110209659
    Abstract: A method for controlling the relative and absolute growth rates of all possible crystallographic planes of a group-III nitride crystal during ammonothermal growth. The growth rates of the various exposed crystallographic planes of the group-III nitride crystal are controlled by modifying the environment and/or conditions within the reactor vessel, which may be subdivided into a plurality of separate zones, wherein each of the zones has their own environment and conditions. The environment includes the amount of atoms, compounds and/or chemical complexes within each of the zones, along with their relative ratios and the relative motion of the atoms, compounds and/or chemical complexes within each of the zones and among the zones. The conditions include the thermodynamic properties each of the zones possess, such as temperatures, pressures and/or densities.
    Type: Application
    Filed: November 4, 2009
    Publication date: September 1, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Siddha Pimputkar, Derrick S. Kamber, James S. Speck, Shuji Nakamura
  • ADDITION OF HYDROGEN AND/OR NITROGEN CONTAINING COMPOUNDS TO THE NITROGEN-CONTAINING SOLVENT USED DURING THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
    Publication number: 20110212013
    Abstract: A method for adding hydrogen-containing and/or nitrogen-containing compounds to a nitrogen-containing solvent used during ammonothermal growth of group-Ill nitride crystals to offset decomposition products formed from the nitrogen-containing solvent, in order to shift the balance between the reactants, i.e. the nitrogen-containing solvent and the decomposition products, towards the reactant side.
    Type: Application
    Filed: November 4, 2009
    Publication date: September 1, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Siddha Pimputkar, Derrick S. Kamber, James S. Speck, Shuji Nakamura
  • NOVEL VESSEL DESIGNS AND RELATIVE PLACEMENTS OF THE SOURCE MATERIAL AND SEED CRYSTALS WITH RESPECT TO THE VESSEL FOR THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS
    Publication number: 20110203514
    Abstract: Reactor designs for use in ammonothermal growth of group-III nitride crystals envision a different relative placement of source materials and seed crystals with respect to each other, and with respect to the vessel containing a solvent. This placement results in a difference in fluid dynamical flow patterns within the vessel.
    Type: Application
    Filed: November 4, 2009
    Publication date: August 25, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Siddha Pimputkar, Derrick S. Kamber, James S. Speck, Shuji Nakamura
  • SEMIPOLAR III-NITRIDE LASER DIODES WITH ETCHED MIRRORS
    Publication number: 20110170569
    Abstract: A semipolar {20-21} III-nitride based laser diode employing a cavity with one or more etched facet mirrors. The etched facet mirrors provide an ability to arbitrarily control the orientation and dimensions of the cavity or stripe of the laser diode, thereby enabling control of electrical and optical properties of the laser diode.
    Type: Application
    Filed: October 20, 2010
    Publication date: July 14, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Anurag Tyagi, Robert M. Farrell, Chia-Yen Huang, Po Shan Hsu, Daniel A. Haeger, Kathryn M. Kelchner, Hiroaki Ohta, Shuji Nakamura, Steven P. DenBaars, James S. Speck
  • Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
    Patent number: 7976630
    Abstract: A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.
    Type: Grant
    Filed: September 9, 2009
    Date of Patent: July 12, 2011
    Assignee: Soraa, Inc.
    Inventors: Christiane Poblenz, James S. Speck, Derrick S. Kamber
  • Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
    Patent number: 7955983
    Abstract: A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.
    Type: Grant
    Filed: March 3, 2008
    Date of Patent: June 7, 2011
    Assignees: The Regents of the University of California, Japan Science and Technology Agency
    Inventors: Bilge M. Imer, James S. Speck, Steven P. DenBaars
  • High efficiency light emitting diode (LED)
    Patent number: 7956371
    Abstract: An (Al, Ga, In)N light emitting diode (LED), wherein light extraction from chip and/or phosphor conversion layer is optimized. By novel shaping of LED and package optics, a high efficiency light emitting diode is achieved.
    Type: Grant
    Filed: December 8, 2006
    Date of Patent: June 7, 2011
    Assignee: The Regents of the University of California
    Inventors: Steven P. DenBaars, Shuji Nakamura, James S. Speck
  • N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor
    Patent number: 7948011
    Abstract: A novel enhancement mode field effect transistor (FET), such as a High Electron Mobility Transistors (HEMT), has an N-polar surface uses polarization fields to reduce the electron population under the gate in the N-polar orientation, has improved dispersion suppression, and low gate leakage.
    Type: Grant
    Filed: September 18, 2006
    Date of Patent: May 24, 2011
    Assignee: The Regents of the University of California
    Inventors: Siddharth Rajan, Chang Soo Suh, James S. Speck, Umesh K. Mishra
  • METHOD OF CONTROLLING STRESS IN GROUP-III NITRIDE FILMS DEPOSITED ON SUBSTRATES
    Publication number: 20110108886
    Abstract: Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.
    Type: Application
    Filed: October 11, 2010
    Publication date: May 12, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Hugues Marchand, Brendan J. Moran, Umesh K. Mishra, James S. Speck
  • SUPERLUMINESCENT DIODES BY CRYSTALLOGRAPHIC ETCHING
    Publication number: 20110103418
    Abstract: An optoelectronic device, comprising an active region and a waveguide structure to provide optical confinement of light emitted from the active region; a pair of facets on opposite ends of the device, having opposite surface polarity; and one of the facets which has been roughened by a crystallographic chemical etching process, wherein the device is a nonpolar or semipolar (Ga,In,Al,B)N based device.
    Type: Application
    Filed: October 27, 2010
    Publication date: May 5, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Matthew T. Hardy, You-Da Lin, Hiroaki Ohta, Steven P. DenBaars, James S. Speck, Shuji Nakamura, Kathryn M. Kelchner
  • SEMIPOLAR NITRIDE-BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOYS WITH MISFIT DISLOCATIONS AT THE HETEROINTERFACE
    Publication number: 20110064103
    Abstract: A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.
    Type: Application
    Filed: August 23, 2010
    Publication date: March 17, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Hiroaki Ohta, Feng Wu, Anurag Tyagi, Arpan Chakraborty, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Erin C. Young
  • ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS
    Publication number: 20110062415
    Abstract: An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.
    Type: Application
    Filed: August 23, 2010
    Publication date: March 17, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Hiroaki Ohta, Feng Wu, Anurag Tyagi, Arpan Chakraborty, James S. Speck, Steven P. DenBaars, Shuji Nakamura, Erin C. Young
  • TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (GA,AL,IN,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES
    Publication number: 20110062449
    Abstract: A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
    Type: Application
    Filed: November 23, 2010
    Publication date: March 17, 2011
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Robert M. Farrell, JR., Troy J. Baker, Arpan Chakraborty, Benjamin A. Haskell, P. Morgan Pattison, Rajat Sharma, Umesh Kumar Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • STRUCTURE AND METHOD FOR ACHIEVING SELECTIVE ETCHING IN (Ga,Al,In,B)N LASER DIODES
    Publication number: 20110044364
    Abstract: A structure and method that can be used to achieve selective etching in (Ga, Al, In, B) N laser diodes, comprising fabricating (Ga, Al, In, B) N laser diodes with one or more Al-containing etch stop layers.
    Type: Application
    Filed: August 19, 2010
    Publication date: February 24, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Robert M. Farrell, Daniel A. Haeger, Po Shan Hsu, Umesh K. Mishra, Steven P. DenBaars, James S. Speck, Shuji Nakamura
  • THIN P-TYPE GALLIUM NITRIDE AND ALUMINUM GALLIUM NITRIDE ELECTRON-BLOCKING LAYER FREE GALLIUM NITRIDE-BASED LIGHT EMITTING DIODES
    Publication number: 20110037085
    Abstract: A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.
    Type: Application
    Filed: November 2, 2009
    Publication date: February 17, 2011
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Hong Zhong, Anurag Tyagi, James S. Speck, Steven P. DenBaars, Shuji Nakamura
  • METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) GROWTH OF HIGH PERFORMANCE NON-POLAR III-NITRIDE OPTICAL DEVICES
    Publication number: 20110037052
    Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
    Type: Application
    Filed: October 28, 2010
    Publication date: February 17, 2011
    Applicants: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Mathew C. Schmidt, Kwang Choong Kim, Hitsohi Sato, Steven P. DenBaars, James S. Speck, Shuji Nakamura