Abstract: A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers.

Abstract: A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

Abstract: A semipolar plane III-nitride semiconductor-based laser diode or light emitting diode, comprising a semipolar Indium containing multiple quantum wells for emitting light, having Aluminum containing quantum well barriers, wherein the Indium containing multiple quantum well and Aluminum containing barriers are grown in a semipolar orientation on a semipolar plane.

Abstract: A method of performing a photoelectrochemical (PEC) etch on an exposed surface of a semipolar {20-2-1} III-nitride semiconductor, for improving light extraction from and for enhancing external efficiency of one or more active layers formed on or above the semipolar {20-2-1} III-nitride semiconductor.

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15° or greater miscut angle towards the a-axis direction and a less than 30° miscut angle towards the a-axis direction.

Abstract: A method for fabricating a high quality freestanding nonpolar and semipolar nitride substrate with increased surface area, comprising stacking multiple films by growing the films one on top of each other with different and non-orthogonal growth directions.

Abstract: An (Al,In,B,Ga)N or III-nitride based laser diode epitaxially grown on orientations other than a c-plane orientation, namely various semipolar and nonpolar orientations, and having polished facets. The semipolar orientation may be a semipolar (11-22), (11-2-2), (101-1), (10-1-1), (20-21), (20-2-1), (30-31) or (30-3-1) orientation, and the nonpolar orientation may be a nonpolar (10-10) or (11-20) orientation. The facets are chemically mechanically or mechanically polished.

Abstract: A white light source employing a III-nitride based laser diode pumping one or more phosphors. The III-nitride laser diode emits light in a first wavelength range that is down-converted to light in a second wavelength range by the phosphors, wherein the light in the first wavelength range is combined with the light in the second wavelength range to create highly directional white light. The light in the first wavelength range comprises ultraviolet, violet, blue and/or green light, while the light in the second wavelength range comprises green, yellow and/or red light.

Abstract: Disclosed is an improved light-emitting device for an AC power operation. A conventional light emitting device employs an AC light-emitting diode having arrays of light emitting cells connected in reverse parallel. The arrays in the prior art alternately repeat on/off in response to a phase change of an AC power source, resulting in short light emission time during a ½ cycle and the occurrence of a flicker effect. An AC light-emitting device according to the present invention employs a variety of means by which light emission time is prolonged during a ½ cycle in response to a phase change of an AC power source and a flicker effect can be reduced. For example, the means may be switching blocks respectively connected to nodes between the light emitting cells, switching blocks connected to a plurality of arrays, or a delay phosphor.

Abstract: Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.

Abstract: A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an ?-axis direction comprising a 0.15° or greater miscut angle towards the ?-axis direction and a less than 30° miscut angle towards the ?-axis direction.

Abstract: A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Abstract: A high-power and high-efficiency light emitting device with emission wavelength (?peak) ranging from 280 nm to 360 nm is fabricated. The new device structure uses non-polar or semi-polar AlInN and AlInGaN alloys grown on a non-polar or semi-polar bulk GaN substrate.

Abstract: A method of obtaining a hexagonal würtzite type epitaxial layer with a low impurity concentration of alkali-metal by using a hexagonal würtzite substrate possessing a higher impurity concentration of alkali-metal, wherein a surface of the substrate upon which the epitaxial layer is grown has a crystal plane which is different from the c-plane.

Abstract: A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.

Abstract: Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals.

Abstract: Exemplary embodiments of the present invention disclose a light-emitting device including a first power source connection terminal and a second power source connection terminal, the first and second power source connection terminals configured to be connected to an external power source, and a plurality of light emitting cell arrays, each of the plurality of light emitting cell arrays being connected in parallel to one another between the first and the second power source connection terminals, each of the plurality of light emitting cell arrays comprising serially connected light emitting cells. Each of the light emitting cells includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an electrode pad disposed on the second conductivity-type semiconductor layer.

Abstract: A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.

Abstract: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-III nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-III nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-III nitride into said fluid.

Abstract: Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation.