Abstract: Embodiments disclosed herein relate to a filter (100). In one embodiment, the filter includes a pattern (120). The pattern may reflect or fluoresce non-visible light.

Abstract: A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.

Abstract: A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.

Abstract: A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.

Abstract: A sensor device and method for detecting the presence of an analyte in a fluid solution are disclosed. The sensor device system can comprise a substrate and an array of free-standing nanowires attached to the substrate. The array can include individual free-standing nanowires wherein each of the individual free-standing nanowires have a first end and a second end. The first end can, in some embodiments, be attached to the substrate and the second end unattached to the substrate. Such individual free-standing nanowires are configured for electrical communication with other individual free-standing nanowires through the first end. A chip or computer can be electrically coupled to the array of free-standing nanowires for receiving electrical information from the array of free-standing nanowires. In some embodiments a power source can be used to send current through the nanowire array.

Abstract: This disclosure relates to a system and method for creating nano-object arrays. A nano-object array can be created by exposing troughs in a corrugated surface to nano-objects and depositing the nano-objects within or orienting the nano-objects with the troughs.

Abstract: A memory device includes a semiconducting polymer film, which includes an organic dopant. The semiconducting polymer film has a first side and a second side. The memory device also includes a first plurality of electrical conductors substantially parallel to each other coupled to the first side of the semiconducting polymer layer, and a second plurality of electrical conductors substantially parallel to each other, coupled to the second side of the semiconducting polymer layer. The first and second pluralities of electrical conductors are substantially mutually orthogonal to each other. Further, an electrical charge is localized on the organic dopant.

Abstract: Photonic crystal structures are made by a method including steps of providing a substrate, depositing at least one planar layer to form a stack, each planar layer of the stack comprising two or more sublayers having different sublayer refractive indices, depositing a hard mask material, depositing an imprintable material over the hard mask material, patterning the imprintable material by imprinting an array of depressions, and directionally etching at the depressions a regular array of openings through the hard mask material and the stack.

Abstract: A sensor device and method for detecting the presence of an analyte in a fluid solution are disclosed. The sensor device system can comprise a substrate and an array of free-standing nanowires attached to the substrate. The array can include individual free-standing nanowires wherein each of the individual free-standing nanowires have a first end and a second end. The first end can, in some embodiments, be attached to the substrate and the second end unattached to the substrate. Such individual free-standing nanowires are configured for electrical communication with other individual free-standing nanowires through the first end. A chip or computer can be electrically coupled to the array of free-standing nanowires for receiving electrical information from the array of free-standing nanowires. In some embodiments a power source can be used to send current through the nanowire array.

Abstract: The disclosure relates to a process including depositing an imprintable layer on a substrate. The imprintable layer is imprinted into the pattern of an imprint-fabricated ribbon. The pattern from the imprintable layer is transferred to the substrate to be used to fabricate the imprint-fabricated ribbon.

Abstract: This disclosure relates to a system and method for fabricating and using a superlattice. A superlattice can be fabricated by applying alternating material layers on a ridge and then removing some of the alternating layers to expose edges. These exposed edges can be of nearly arbitrary length and curvature. These edges can be used to fabricate an array of nano-scale-width curved wires.

Abstract: This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.

Abstract: This disclosure relates to continuous carbon-nanotube filaments of radiation-emitting devices and methods for fabricating them.

Abstract: A memory device including a substrate, and multiple self-aligned nano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.

Abstract: Photonic crystal structures are made by a method including steps of providing a substrate, depositing at least one planar layer to form a stack, each planar layer of the stack comprising two or more sublayers having different sublayer refractive indices, depositing a hard mask material, depositing an imprintable material over the hard mask material, patterning the imprintable material by imprinting an array of depressions, and directionally etching at the depressions a regular array of openings through the hard mask material and the stack.

Abstract: An electronic device includes first and second electrical contacts electrically coupled to a semiconductor polymer film, which includes mono-substituted diphenylhydrazone.

Abstract: A golf ball deflecting window cover includes a window frame and a window that is mounted therein. A panel of transparent plastic material has a first side, a second side, a top edge, a bottom edge, a first side edge and a second side edge. At least one hinge member hingedly couples the first side of the panel to the window frame. The panel is positionable in a closed position positioned in front of the window or in an open position extending away from the window. At least one latching assembly is adapted for selectively locking the panel in the closed position.

Abstract: Photonic crystal structures are made by a method including steps of providing a substrate, depositing at least one planar layer to form a stack, each planar layer of the stack comprising two or more sublayers having different sublayer refractive indices, depositing a hard mask material, depositing an imprintable material over the hard mask material, patterning the imprintable material by imprinting an array of depressions, and directionally etching at the depressions a regular array of openings through the hard mask material and the stack.

Abstract: This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.

Abstract: This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.