Patents by Inventor James Stasiak

James Stasiak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9291756
    Abstract: Embodiments disclosed herein relate to a filter (100). In one embodiment, the filter includes a pattern (120). The pattern may reflect or fluoresce non-visible light.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: March 22, 2016
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Daniel I. Croft, Barry T Phillips, Brad Benson, Cary G Addington, Angus Wu, Stephan R Clark, Guy Adams, James Stasiak
  • Patent number: 8329527
    Abstract: A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: December 11, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Adam L Ghozeil, James Stasiak, Kevin Peters, Galen H. Kawamoto
  • Publication number: 20110159648
    Abstract: A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.
    Type: Application
    Filed: March 4, 2011
    Publication date: June 30, 2011
    Inventors: Adam L. Ghozeil, James Stasiak, Kevin Peters, Galen H. Kawamoto
  • Patent number: 7902015
    Abstract: A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.
    Type: Grant
    Filed: May 10, 2005
    Date of Patent: March 8, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Adam L Ghozeil, James Stasiak, Kevin Peters, Galen H. Kawamoto
  • Patent number: 7833801
    Abstract: A sensor device and method for detecting the presence of an analyte in a fluid solution are disclosed. The sensor device system can comprise a substrate and an array of free-standing nanowires attached to the substrate. The array can include individual free-standing nanowires wherein each of the individual free-standing nanowires have a first end and a second end. The first end can, in some embodiments, be attached to the substrate and the second end unattached to the substrate. Such individual free-standing nanowires are configured for electrical communication with other individual free-standing nanowires through the first end. A chip or computer can be electrically coupled to the array of free-standing nanowires for receiving electrical information from the array of free-standing nanowires. In some embodiments a power source can be used to send current through the nanowire array.
    Type: Grant
    Filed: November 17, 2006
    Date of Patent: November 16, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: James Stasiak, Paul H. McClelland, David E. Hackleman, Grant Pease, R. Stanley Williams, Kevin Peters
  • Patent number: 7829352
    Abstract: This disclosure relates to a system and method for creating nano-object arrays. A nano-object array can be created by exposing troughs in a corrugated surface to nano-objects and depositing the nano-objects within or orienting the nano-objects with the troughs.
    Type: Grant
    Filed: July 14, 2006
    Date of Patent: November 9, 2010
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Pavel Kornilovich, Peter Mardilovich, James Stasiak
  • Patent number: 7612369
    Abstract: A memory device includes a semiconducting polymer film, which includes an organic dopant. The semiconducting polymer film has a first side and a second side. The memory device also includes a first plurality of electrical conductors substantially parallel to each other coupled to the first side of the semiconducting polymer layer, and a second plurality of electrical conductors substantially parallel to each other, coupled to the second side of the semiconducting polymer layer. The first and second pluralities of electrical conductors are substantially mutually orthogonal to each other. Further, an electrical charge is localized on the organic dopant.
    Type: Grant
    Filed: September 9, 2005
    Date of Patent: November 3, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventor: James Stasiak
  • Patent number: 7608194
    Abstract: Photonic crystal structures are made by a method including steps of providing a substrate, depositing at least one planar layer to form a stack, each planar layer of the stack comprising two or more sublayers having different sublayer refractive indices, depositing a hard mask material, depositing an imprintable material over the hard mask material, patterning the imprintable material by imprinting an array of depressions, and directionally etching at the depressions a regular array of openings through the hard mask material and the stack.
    Type: Grant
    Filed: July 6, 2007
    Date of Patent: October 27, 2009
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: James Stasiak, David Champion, Kevin Peters, Donald J. Coulman, Tony S. Cruz-Uribe
  • Publication number: 20080204048
    Abstract: A sensor device and method for detecting the presence of an analyte in a fluid solution are disclosed. The sensor device system can comprise a substrate and an array of free-standing nanowires attached to the substrate. The array can include individual free-standing nanowires wherein each of the individual free-standing nanowires have a first end and a second end. The first end can, in some embodiments, be attached to the substrate and the second end unattached to the substrate. Such individual free-standing nanowires are configured for electrical communication with other individual free-standing nanowires through the first end. A chip or computer can be electrically coupled to the array of free-standing nanowires for receiving electrical information from the array of free-standing nanowires. In some embodiments a power source can be used to send current through the nanowire array.
    Type: Application
    Filed: November 17, 2006
    Publication date: August 28, 2008
    Inventors: James Stasiak, Paul H. McClelland, David E. Hackleman, Grant Pease, R. Stanley Williams, Kevin Peters
  • Patent number: 7410904
    Abstract: The disclosure relates to a process including depositing an imprintable layer on a substrate. The imprintable layer is imprinted into the pattern of an imprint-fabricated ribbon. The pattern from the imprintable layer is transferred to the substrate to be used to fabricate the imprint-fabricated ribbon.
    Type: Grant
    Filed: April 24, 2003
    Date of Patent: August 12, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: James Stasiak, Kevin Peters
  • Patent number: 7407738
    Abstract: This disclosure relates to a system and method for fabricating and using a superlattice. A superlattice can be fabricated by applying alternating material layers on a ridge and then removing some of the alternating layers to expose edges. These exposed edges can be of nearly arbitrary length and curvature. These edges can be used to fabricate an array of nano-scale-width curved wires.
    Type: Grant
    Filed: April 2, 2004
    Date of Patent: August 5, 2008
    Inventors: Pavel Kornilovich, Peter Mardilovich, James Stasiak, Niranjan Thirukkovalur
  • Patent number: 7375458
    Abstract: This disclosure relates to continuous carbon-nanotube filaments of radiation-emitting devices and methods for fabricating them.
    Type: Grant
    Filed: July 28, 2004
    Date of Patent: May 20, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Pavel Kornilovich, James Stasiak, Robert Bicknell
  • Patent number: 7375368
    Abstract: This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.
    Type: Grant
    Filed: October 17, 2006
    Date of Patent: May 20, 2008
    Inventors: Pavel Kornilovich, Peter Mardilovich, Kevin Francis Peters, James Stasiak
  • Patent number: 7335579
    Abstract: A memory device including a substrate, and multiple self-aligned nano-rectifying elements disposed over the substrate. Each nano-rectifying element has multiple first electrode lines, and multiple device structures disposed on the multiple first electrode lines forming the multiple self-aligned nano-rectifying elements. Each device structure has at least one lateral dimension less than about 75 nanometers. The memory device also includes multiple switching elements disposed over the device structures and self-aligned in at least one direction with the device structures. In addition, the memory device includes multiple second electrode lines disposed over, electrically coupled to, and self-aligned to the switching elements, whereby a memory device is formed.
    Type: Grant
    Filed: January 12, 2006
    Date of Patent: February 26, 2008
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: James Stasiak, Kevin F Peters, Jennifer Wu, Pavel Kornilovich, Yong Chen
  • Publication number: 20080014353
    Abstract: Photonic crystal structures are made by a method including steps of providing a substrate, depositing at least one planar layer to form a stack, each planar layer of the stack comprising two or more sublayers having different sublayer refractive indices, depositing a hard mask material, depositing an imprintable material over the hard mask material, patterning the imprintable material by imprinting an array of depressions, and directionally etching at the depressions a regular array of openings through the hard mask material and the stack.
    Type: Application
    Filed: July 6, 2007
    Publication date: January 17, 2008
    Inventors: James Stasiak, David Champion, Kevin Peters, Donald Coulman, Tony Cruz-Uribe
  • Patent number: 7276727
    Abstract: An electronic device includes first and second electrical contacts electrically coupled to a semiconductor polymer film, which includes mono-substituted diphenylhydrazone.
    Type: Grant
    Filed: January 18, 2005
    Date of Patent: October 2, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventor: James Stasiak
  • Patent number: 7266928
    Abstract: A golf ball deflecting window cover includes a window frame and a window that is mounted therein. A panel of transparent plastic material has a first side, a second side, a top edge, a bottom edge, a first side edge and a second side edge. At least one hinge member hingedly couples the first side of the panel to the window frame. The panel is positionable in a closed position positioned in front of the window or in an open position extending away from the window. At least one latching assembly is adapted for selectively locking the panel in the closed position.
    Type: Grant
    Filed: July 6, 2004
    Date of Patent: September 11, 2007
    Inventor: James A. Stasiak, Jr.
  • Patent number: 7255805
    Abstract: Photonic crystal structures are made by a method including steps of providing a substrate, depositing at least one planar layer to form a stack, each planar layer of the stack comprising two or more sublayers having different sublayer refractive indices, depositing a hard mask material, depositing an imprintable material over the hard mask material, patterning the imprintable material by imprinting an array of depressions, and directionally etching at the depressions a regular array of openings through the hard mask material and the stack.
    Type: Grant
    Filed: January 12, 2004
    Date of Patent: August 14, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: James Stasiak, David Champion, Kevin Peters, Donald J. Coulman, Tony S. Cruz-Uribe
  • Publication number: 20070182015
    Abstract: This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.
    Type: Application
    Filed: July 27, 2006
    Publication date: August 9, 2007
    Inventors: Pavel Kornilovich, Peter Mardilovich, Kevin Peters, James Stasiak
  • Patent number: 7223611
    Abstract: This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.
    Type: Grant
    Filed: October 7, 2003
    Date of Patent: May 29, 2007
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Pavel Kornilovich, Peter Mardilovich, Kevin Francis Peters, James Stasiak