Patents by Inventor Jang-eun Lee

Jang-eun Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates
    Publication number: 20030000459
    Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.
    Type: Application
    Filed: September 6, 2002
    Publication date: January 2, 2003
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jeong-hyuck Park, Hee-duk Kim, Jung-hun Cho, Jong-wook Choi, Sung-bum Cho, Young-koo Lee, Jin-sung Kim, Jang-eun Lee, Ju-hyuck Chung, Sun-hoo Park, Jae-hyun Lee, Shin-woo Nam
  • Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates
    Publication number: 20030000648
    Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.
    Type: Application
    Filed: September 5, 2002
    Publication date: January 2, 2003
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jeong-Hyuck Park, Hee-Duk Kim, Jung-Hun Cho, Jong-Wook Choi, Sung-Bum Cho, Young-Koo Lee, Jin-Sung Kim, Jang-Eun Lee, Ju-Hyuck Chung, Sun-Hoo Park, Jae-Hyun Lee, Shin-Woo Nam
  • Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates
    Patent number: 6464794
    Abstract: A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.
    Type: Grant
    Filed: September 23, 1999
    Date of Patent: October 15, 2002
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jeong-hyuck Park, Hee-duk Kim, Jung-hun Cho, Jong-wook Choi, Sung-bum Cho, Young-koo Lee, Jin-sung Kim, Jang-eun Lee, Ju-hyuck Chung, Sun-hoo Park, Jae-hyun Lee, Shin-woo Nam
  • Methods of forming titanium nitride composite layers using composite gases having increasing TiCl4 to NH3 ratios
    Patent number: 6291342
    Abstract: A method of forming a multilayer titanium nitride film hardly containing any Cl component by a multiple step chemical vapor deposition method, and a method of manufacturing a semiconductor device using the same are provided. In the present invention, a multilayer TiN film is formed by multiple step chemical vapor deposition (CVD) on a semiconductor substrate on which an underlayer is formed. In order to form the multilayer TiN film, an underlayer protective TiN film is formed by forming a first TiN film on the underlayer and NH3 annealing the first TiN film. A main TiN film is formed by forming a second TiN film on the underlayer protective TiN film and NH3 annealing the second TiN film. A source gas used in order to form the first TiN film has a smaller TiCl4 to NH3 gas flow ratio than a source gas for forming the second TiN film. In order to apply the multilayer TiN film to the fabrication of the semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate.
    Type: Grant
    Filed: January 23, 2001
    Date of Patent: September 18, 2001
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jang-eun Lee, Ju-hyuck Chung, Tae-wook Seo
  • Methods of forming titanium nitride composite layers using composite gases having increasing TiC14 to NH3 ratios
    Publication number: 20010002334
    Abstract: A method of forming a multilayer titanium nitride film hardly containing any Cl component by a multiple step chemical vapor deposition method, and a method of manufacturing a semiconductor device using the same are provided. In the present invention, a multilayer TiN film is formed by multiple step chemical vapor deposition (CVD) on a semiconductor substrate on which an underlayer is formed. In order to form the multilayer TiN film, an underlayer protective TiN film is formed by forming a first TiN film on the underlayer and NH3 annealing the first TiN film. A main TiN film is formed by forming a second TiN film on the underlayer protective TiN film and NH3 annealing the second TiN film. A source gas used in order to form the first TiN film has a smaller TiCl4 to NH3 gas flow ratio than a source gas for forming the second TiN film. In order to apply the multilayer TiN film to the fabrication of the semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate.
    Type: Application
    Filed: January 23, 2001
    Publication date: May 31, 2001
    Inventors: Jang-eun Lee, Ju-hyuck Chung, Tae-wook Seo
  • Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the same
    Patent number: 6207557
    Abstract: A method of forming a multilayer titanium nitride film hardly containing any Cl component by a multiple step chemical vapor deposition method, and a method of manufacturing a semiconductor device using the same are provided. In the present invention, a multilayer TiN film is formed by multiple step chemical vapor deposition (CVD) on a semiconductor substrate on which an underlayer is formed. In order to form the multilayer TiN film, an underlayer protective TiN film is formed by forming a first TiN film on the underlayer and NH3 annealing the first TiN film. A main TiN film is formed by forming a second TiN film on the underlayer protective TiN film and NH3 annealing the second TiN film. A source gas used in order to form the first TiN film has a smaller TiCl4 to NH3 gas flow ratio than a source gas for forming the second TiN film. In order to apply the multilayer TiN film to the fabrication of the semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate.
    Type: Grant
    Filed: July 19, 1999
    Date of Patent: March 27, 2001
    Assignee: Samsung Electronics Co., Inc.
    Inventors: Jang-eun Lee, Ju-hyuck Chung, Tae-wook Seo