Abstract: In a method for forming a gate in a semiconductor device, a first preliminary gate structure is formed on a substrate. The first preliminary gate structure includes a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially stacked on the substrate. A primary oxidation process is performed using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having tungsten oxide. The tungsten oxide is reduced to a tungsten material using a gas containing hydrogen to form a gate structure. The tungsten oxide may not be formed on the gate structure so that generation of the whiskers may be suppressed. Thus, a short between adjacent wirings may not be generated.

Abstract: A flash memory device includes a semiconductor substrate, a gate insulating layer having a first width formed on the semiconductor substrate to trap carriers tunneled from the semiconductor substrate and a metal electrode on the gate insulating layer to receive a voltage required for tunneling. The metal electrode having a second width smaller than the first width. The flash memory device further includes a sidewall spacer surrounding a side surface of the metal electrode to prevent oxidation of the metal electrode.

Abstract: A method of forming a memory device includes forming a first insulating pattern and a polysilicon pattern in a peripheral region of a substrate, forming a cell gate insulating pattern including a second insulating pattern, a charge storage pattern, and a third insulating pattern in a cell region of the substrate, forming a barrier metal layer on the polysilicon pattern and on the third insulating pattern, forming a conductive layer on the barrier metal layer, patterning the conductive layer to simultaneously form a first conductive pattern on the polysilicon pattern and a second conductive pattern on the third insulating pattern, and patterning the barrier metal layer to simultaneously form a first barrier metal pattern on the polysilicon pattern and a second barrier metal pattern on the third insulating pattern.

Abstract: A semiconductor memory device, e.g., a charge trapping type non-volatile memory device, may include a charge trapping structure formed in a first area of a substrate and a gate structure formed in a second area of the substrate. The charge trapping structure may include a tunnel oxide layer pattern, a charge trapping layer pattern and a dielectric layer pattern of aluminum-containing tertiary metal oxide. The gate structure may include a gate oxide layer pattern, a polysilicon layer pattern and an ohmic layer pattern of aluminum-containing tertiary metal silicide. A first electrode and a second electrode may be formed on the charge trapping structure. A lower electrode and an upper electrode may be provided on the gate structure. The dielectric layer pattern may have a higher dielectric constant, and the ohmic layer pattern may have improved thermal stability, thereby enhancing programming and erasing operations of the charge trapping type non-volatile memory device.

Abstract: A method of forming a semiconductor device includes sequentially first and second tungsten silicide layers on a silicon layer. The first tungsten silicide layer is in a substantially amorphous state and a ratio of tungsten to silicon in the first tungsten silicide layer is about 1:4.5˜about 1:9.

Abstract: Methods of forming metal nitride layers on a substrate include reacting a metal source gas with a nitrogen source gas in a process chamber to form a metal nitride layer on the substrate. The process chamber may have an atmosphere having a pressure of about 0.1 mTorr to about 5 mTorr and a temperature of about 200° C. to about 450° C. A ratio of the flow rate of the metal source gas to the flow rate of the nitrogen source gas may be “1” or more. An interlayer insulating layer may be formed on the semiconductor substrate prior to formation of the metal nitride layer.

Abstract: A method of forming a tungsten silicide layer and a related method of fabricating a semiconductor element. The method of forming the tungsten silicide layer includes forming a pre-coating layer within a CVD process chamber by injecting a tungsten source gas (A) and a silicon source gas (B) at a flow ratio (A/B) of 1/50 or less, and thereafter loading a semiconductor substrate into the CVD process chamber in which the precoating layer is formed, and injecting additional tungsten source gas and silicon source gas to form the tungsten silicide layer on the semiconductor substrate.

Abstract: A satellite broadcast receiver comprises an antenna, a tuner, a modulator, a FEC decoder, a microprocessor, and an antenna driver. The antenna receives the satellite signal and the tuner tunes the satellite signal received by the antenna, and the modulator modulates the satellite signal tuned by the tuner into digital signal, the FEC decoder corrects a position error of the satellite antenna using the signal modulated by the modulator, and outputs a corresponding output signal, and the microprocessor receives the signal modulated by the modulator and the output signal of the error corrector, and outputs a control signal which controls the position of the antenna, and the antenna driver drives the antenna in accordance with the control signal of the microprocessor. The satellite broadcast receiver enables a user to detect satellites fast and see satellite broadcast conveniently.

Abstract: An apparatus and method to inspect a display panel that can correctly detect a defect of the display panel itself. In the method of inspecting the display panel, a first image is captured from the display panel in a state in which no pattern is applied to the display panel. Light is then irradiated on the display panel in a state in which a pattern is applied to the display panel, and a second image is captured from the display panel. The first image can be compared with the second image, and a determination can be made as to whether or not a defect of the display panel is present.

Abstract: The present invention provides a scroll-type expander that simultaneously performs expansion and re-heating such that efficient expansion is realized and there is no reduction in efficiency caused by pressure loss occurring during the supply of an working fluid to the scroll-type expander, and that minimizes a difference in temperature between a stationary scroll member and a rotating scroll member, as well as a temperature distribution of a scroll wrap. The present invention also relates to a heat exchange system that uses a scroll-type expander to replace pistons in a conventional reciprocating Stirling engine or refrigerator with a pair of scroll-type compressor and expander such that the heat exchange system may be used as a Stirling engine or refrigerator. The present invention also provides a steam engine, in which a steam turbine in the conventional steam engine (Rankine system) is replaced with a scroll-type expander such that the steam cycle has both a re-heating cycle and a regeneration cycle.

Abstract: In one embodiment, a semiconductor device comprises a semiconductor substrate and a doped conductive layer formed over the semiconductor substrate. A diffusion barrier layer is formed over the doped conductive layer. The diffusion barrier layer comprises an amorphous semiconductor material. An ohmic contact layer is formed over the diffusion barrier layer. A metal barrier layer is formed over the ohmic contact layer. A metal layer is formed over the metal barrier layer.

Abstract: In one embodiment, a semiconductor device comprises a semiconductor substrate and a doped conductive layer formed over the semiconductor substrate. A diffusion barrier layer is formed over the doped conductive layer. The diffusion barrier layer comprises an amorphous semiconductor material. After forming the diffusion barrier layer, a heat treatment process may be additionally performed thereon. An ohmic contact layer is formed over the diffusion barrier layer. A metal barrier layer is formed over the ohmic contact layer. A metal layer is formed over the metal barrier layer.

Abstract: In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide that includes tungsten and silicon with an atomic ratio within a range of about 1:5 to about 1:15. The tungsten silicide may be obtained in a chamber using a reaction gas including a tungsten source gas and a silicon source gas by a partial pressure ratio within a range of about 1.0:25.0 to about 1.0:160.0. The reaction gas may have a partial pressure within a range of about 2.05 percent to about 30.0 percent of a total internal pressure of the chamber. When the ohmic layer is employed for a conductive structure, such as a gate structure or a metal wiring, the conductive structure may have a reduced resistance.

Abstract: Methods of forming metal nitride layers on a substrate include reacting a metal source gas with a nitrogen source gas in a process chamber to form a metal nitride layer on the substrate. The process chamber may have an atmosphere having a pressure of about 0.1 mTorr to about 5 mTorr and a temperature of about 200° C. to about 450° C. A ratio of the flow rate of the metal source gas to the flow rate of the nitrogen source gas may be “1” or more. An interlayer insulating layer may be formed on the semiconductor substrate prior to formation of the metal nitride layer.

Abstract: In a method for forming a gate in a semiconductor device, a first preliminary gate structure is formed on a substrate. The first preliminary gate structure includes a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially stacked on the substrate. A primary oxidation process is performed using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having tungsten oxide. The tungsten oxide is reduced to a tungsten material using a gas containing hydrogen to form a gate structure. The tungsten oxide may not be formed on the gate structure so that generation of the whiskers may be suppressed. Thus, a short between adjacent wirings may not be generated.

Abstract: Embodiments of the present invention include semiconductor devices that can be made with relatively low resistance, and methods of forming the semiconductor devices. A resistance reducing layer is formed between a polysilicon layer and a metal layer. As a result, an interface resistance between the polysilicon layer and the metal layer is greatly reduced and a distribution of the interface resistance is very uniform. As a result, a conductive structure including the resistance reducing layer has a greatly reduced sheet resistance to improve electrical characteristics of a semiconductor device having the conductive structure.

Abstract: The present invention provides a scroll-type expander that simultaneously performs expansion and re-heating such that efficient expansion is realized and there is no reduction in efficiency caused by pressure loss occurring during the supply of an working fluid to the scroll-type expander, and that minimizes a difference in temperature between a stationary scroll member and a rotating scroll member, as well as a temperature distribution of a scroll wrap. The present invention also relates to a heat exchange system that uses a scroll-type expander to replace pistons in a conventional reciprocating Stirling engine or refrigerator with a pair of scroll-type compressor and expander such that the heat exchange system may be used as a Stirling engine or refrigerator. The present invention also provides a steam engine, in which a steam turbine in the conventional steam engine (Rankine system) is replaced with a scroll-type expander such that the steam cycle has both a re-heating cycle and a regeneration cycle.

Abstract: An intersection system which can do without, or drastically minimize, the frequency of having to wait for traffic signals in order to relieve traffic of congestion and minimize the land occupied by an intersection system.

Abstract: A satellite broadcast receiver comprises an antenna, a tuner, a modulator, a FEC decoder, a microprocessor, and an antenna driver. The antenna receives the satellite signal and the tuner tunes the satellite signal received by the antenna, and the modulator modulates the satellite signal tuned by the tuner into digital signal, the FEC decoder corrects a position error of the satellite antenna using the signal modulated by the modulator, and outputs a corresponding output signal, and the microprocessor receives the signal modulated by the modulator and the output signal of the error corrector, and outputs a control signal which controls the position of the antenna, and the antenna driver drives the antenna in accordance with the control signal of the microprocessor. The satellite broadcast receiver enables a user to detect satellites fast and see satellite broadcast conveniently.

Abstract: A satellite broadcast receiver comprises an antenna, a tuner, a modulator, a FEC decoder, a microprocessor, and an antenna driver. The antenna receives the satellite signal and the tuner tunes the satellite signal received by the antenna, and the modulator modulates the satellite signal tuned by the tuner into digital signal, the FEC decoder corrects a position error of the satellite antenna using the signal modulated by the modulator, and outputs a corresponding output signal, and the microprocessor receives the signal modulated by the modulator and the output signal of the error corrector, and outputs a control signal which controls the position of the antenna, and the antenna driver drives the antenna in accordance with the control signal of the microprocessor. The satellite broadcast receiver enables a user to detect satellites fast and see satellite broadcast conveniently.