Abstract: A method for manufacturing a semiconductor device includes forming sacrificial mask patterns on an etching target layer, forming a hard mask pattern between the sacrificial mask patterns; removing the sacrificial mask patterns, wherein an inhibition ratio, indicating a degree to which formation of the hard mask pattern is suppressed on the sidewall of the sacrificial mask patterns, increases as the sidewall extends away from the etching target layer.

Abstract: A semiconductor package includes first and second wiring patterns on a substrate and spaced laterally from one another, a first interlayer insulating layer on the substrate and surrounding a sidewall of each of the first and second wiring patterns, the first interlayer insulating layer including a first material having a first dielectric constant, a second interlayer insulating layer on the first interlayer insulating layer, at least a portion of the second interlayer insulating layer overlapping the first and second wiring patterns, the second interlayer insulating layer including a second material having a second dielectric constant greater than the first dielectric constant, a third interlayer insulating layer on the second interlayer insulating layer, and a via extending vertically in the third interlayer insulating layer and connected to the first wiring pattern. Each of the first and second interlayer insulating layers does not overlap each of the first and second wiring patterns.

Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

Abstract: A semiconductor manufacturing apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is configured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.

Abstract: In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.

Abstract: Disclosed is a method by which a transmission device transmits data on the basis of a sound signal in a wireless communication system, the method including transmitting a sound packet corresponding to transmission data, with the sound packet including at least one sound symbol, the sound symbol including at least one sound sub-symbol, a plurality of sound symbol types are supported in the wireless communication system, and each of the plurality of sound symbol types is mapped to a preset data value.

Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

Abstract: A method of manufacturing a semiconductor device includes forming an etch target layer on a substrate; forming an amorphous metal layer on the etch target layer, the amorphous metal layer comprising nitrogen between 15 atomic percentage (at %) and 25 at %; forming an amorphous metal hardmask by patterning the amorphous metal layer; and etching the etch target layer by using the amorphous metal hardmask as an etching mask.

Abstract: According to an embodiment of the present disclosure, a method for operating an electronic device includes displaying a result of recognizing at least one other electronic device as at least one item, and sending a message requesting the at least one other electronic device to output an identifiable signal.

Abstract: A method to transmit and receive a packet in a bridge of a communication system is provided. The method includes receiving a first packet from a first network. The method also includes converting a medium access control (MAC) layer source address of the received first packet into a MAC address of the bridge. The method further includes transmitting the address-converted first packet to a node of a second network.

Abstract: A semiconductor manufacturing, apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is co figured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.

Abstract: In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.

Abstract: The present invention defines a share group, and enables a content generated during an activity period to be automatically shared in the share group during the activity period. According to an embodiment of the present invention, an automatic content share method comprises, in a content share method, the steps of: setting a share group to share the content, an activity and an activity period; and sharing the generated content on the basis of the share group to share the content, the activity and the activity period, wherein the share group is formed on the basis of a proximity discovery.

Abstract: Disclosed is a method by which a transmission device transmits data on the basis of a sound signal in a wireless communication system, the method including transmitting a sound packet corresponding to transmission data, with the sound packet including at least one sound symbol, the sound symbol including at least one sound sub-symbol, a plurality of sound symbol types are supported in the wireless communication system, and each of the plurality of sound symbol types is mapped to a preset data value.

Abstract: A method of manufacturing a semiconductor device includes forming an etch target layer on a substrate; forming an amorphous metal layer on the etch target layer, the amorphous metal layer comprising nitrogen between 15 atomic percentage (at %) and 25 at %; forming an amorphous metal hardmask by patterning the amorphous metal layer; and etching the etch target layer by using the amorphous metal hardmask as an etching mask.

Abstract: Provided are a precursor supply unit, a substrate processing system, and a method of fabricating a semiconductor device using the same. The precursor supply unit may include an outer container, an inner container provided in the outer container and used to store a precursor source, a gas injection line having an injection port, which is provided below the inner container and in the outer container and is used to provide a carrier gas into the outer container, and a gas exhaust line having an exhaust port, which is provided below the inner container and in the outer container and is used to exhaust the carrier gas in the outer container and a precursor produced from the precursor source.

Abstract: A deposition apparatus includes a chuck in a process chamber, the chuck having a top surface on which a substrate is loaded, a showerhead disposed over the chuck, and a fence extension disposed in the process chamber. Plasma is generated in a space between the showerhead and the loaded substrate during a deposition process. The fence extension at least partially confines the plasma in the space during the deposition process, thereby enabling improved thickness uniformity and reliability of a layer deposited on the loaded substrate during the deposition process.

Abstract: The present disclosure relates to a sensor network, Machine Type Communication (MTC), Machine-to-Machine (M2M) communication, and technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the above technologies, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. An electronic device, a method of an electronic device, and a method of a terminal apparatus are provided.

Abstract: A method to transmit and receive a packet in a bridge of a communication system is provided. The method includes receiving a first packet from a first network. The method also includes converting a medium access control (MAC) layer source address of the received first packet into a MAC address of the bridge.