Patents by Inventor Jay T. Scheuer

Jay T. Scheuer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11127557
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: September 21, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Publication number: 20210287872
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Application
    Filed: March 12, 2020
    Publication date: September 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Publication number: 20210183609
    Abstract: Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 17, 2021
    Applicant: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Antonella Cucchetti, Eric D. Hermanson, Frank Sinclair, Jay T. Scheuer, Robert C. Lindberg
  • Patent number: 11037758
    Abstract: Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: June 15, 2021
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Publication number: 20210013001
    Abstract: Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.
    Type: Application
    Filed: September 28, 2020
    Publication date: January 14, 2021
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Patent number: 10818469
    Abstract: An indirectly heated cathode ion source having a cylindrical housing with two open ends is disclosed. The cathode and repeller are sized to fit within the two open ends. These components may be inserted into the open ends, creating a small radial spacing that provides electrical isolation between the cylindrical housing and the cathode and repeller. In another embodiment, the repeller may be disposed from the end of the cylindrical housing creating a small axial spacing. In another embodiment, insulators are used to hold the cathode and repeller in place. This design results in a reduced distance between the cathode column and the extraction aperture, which may be beneficial to the generation of ion beams of certain species.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: October 27, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Alexander S. Perel, Jay T. Scheuer, Graham Wright
  • Publication number: 20200194220
    Abstract: An indirectly heated cathode ion source having a cylindrical housing with two open ends is disclosed. The cathode and repeller are sized to fit within the two open ends. These components may be inserted into the open ends, creating a small radial spacing that provides electrical isolation between the cylindrical housing and the cathode and repeller. In another embodiment, the repeller may be disposed from the end of the cylindrical housing creating a small axial spacing. In another embodiment, insulators are used to hold the cathode and repeller in place. This design results in a reduced distance between the cathode column and the extraction aperture, which may be beneficial to the generation of ion beams of certain species.
    Type: Application
    Filed: December 13, 2018
    Publication date: June 18, 2020
    Inventors: Alexander S. Perel, Jay T. Scheuer, Graham Wright
  • Publication number: 20200126757
    Abstract: Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 23, 2020
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Patent number: 10522330
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: December 31, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Patent number: 10410844
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: September 10, 2019
    Assignee: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Kevin Anglin, Brant S. Binns, Peter F. Kurunczi, Jay T. Scheuer, Eric Hermanson, Alexandre Likhanskii
  • Publication number: 20180166261
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.
    Type: Application
    Filed: February 8, 2017
    Publication date: June 14, 2018
    Inventors: Kevin Anglin, Brant S. Binns, Peter F. Kurunczi, Jay T. Scheuer, Eric Hermanson, Alexandre Likhanskii
  • Patent number: 9805931
    Abstract: Methods for processing of a workpiece are disclosed. A fluid that contains a desired dopant is prepared. The workpiece is immersed in this fluid, such that the dopant is able to contact all surfaces of the workpiece. The fluid is then evacuated, leaving behind the dopant on the workpiece. The dopant is then subjected to a thermal treatment to drive the dopant into the surfaces of the workpiece. In certain embodiments, a selective doping process may be performed by applying a mask to certain surfaces prior to immersing the workpiece in the fluid. In certain embodiments, the fluid may be in a super-critical state to maximize the contact between the dopant and the workpiece.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: October 31, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Jay T. Scheuer, William Davis Lee, Peter L. Kellerman
  • Patent number: 9761410
    Abstract: An apparatus may include an electrostatic filter having a plurality of electrodes; a voltage supply assembly coupled to the plurality of electrodes; a cleaning ion source disposed between the electrostatic filter and a substrate position, the cleaning ion source generating a plasma during a cleaning mode, wherein a dose of ions exit the cleaning ion source; and a controller having a first component to generate a control signal for controlling the voltage supply assembly, wherein a negative voltage is applied to at least one of the plurality of electrodes when the plasma is generated.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: September 12, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Alexandre Likhanskii, Jay T. Scheuer, William Davis Lee
  • Publication number: 20170221678
    Abstract: An apparatus may include an electrostatic filter having a plurality of electrodes; a voltage supply assembly coupled to the plurality of electrodes; a cleaning ion source disposed between the electrostatic filter and a substrate position, the cleaning ion source generating a plasma during a cleaning mode, wherein a dose of ions exit the cleaning ion source; and a controller having a first component to generate a control signal for controlling the voltage supply assembly, wherein a negative voltage is applied to at least one of the plurality of electrodes when the plasma is generated.
    Type: Application
    Filed: February 1, 2016
    Publication date: August 3, 2017
    Inventors: Alexandre Likhanskii, Jay T. Scheuer, William Davis Lee
  • Patent number: 9685298
    Abstract: An apparatus may include an ion source generating an ion beam, the ion source coupled to a first voltage. The apparatus may further include a stopping element disposed between the ion source and a substrate position; a stopping voltage supply coupled to the stopping element; and a control component to direct the stopping voltage supply to apply a stopping voltage to the stopping element, the stopping voltage being equal to or more positive than the first voltage when the ion beam comprises positive ions, and being equal to or more negative than the first voltage when the ion beam comprises negative ions, wherein at least a portion of the ion beam is deflected backwardly from an initial trajectory as deflected ions when the stopping voltage is applied to the stopping element.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: June 20, 2017
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Alexandre Likhanskii, Jay T. Scheuer, William Davis Lee
  • Publication number: 20170092473
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having a conductive beam optic, the beam optic having a varied geometry configured to generate a concentrated electric field proximate the beam optic. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the one or more beam optics, in parallel, to selectively (e.g., individually) generate plasma in an area corresponding to the concentrated electric field. By providing custom-shaped ion beam optics, plasma density is strategically enhanced in areas where surface contamination is most prevalent, thus improving cleaning efficiency and minimizing tool down time.
    Type: Application
    Filed: September 28, 2015
    Publication date: March 30, 2017
    Inventors: William Davis Lee, Kevin Anglin, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii
  • Publication number: 20170062221
    Abstract: Methods for processing of a workpiece are disclosed. A fluid that contains a desired dopant is prepared. The workpiece is immersed in this fluid, such that the dopant is able to contact all surfaces of the workpiece. The fluid is then evacuated, leaving behind the dopant on the workpiece. The dopant is then subjected to a thermal treatment to drive the dopant into the surfaces of the workpiece. In certain embodiments, a selective doping process may be performed by applying a mask to certain surfaces prior to immersing the workpiece in the fluid. In certain embodiments, the fluid may be in a super-critical state to maximize the contact between the dopant and the workpiece.
    Type: Application
    Filed: August 28, 2015
    Publication date: March 2, 2017
    Inventors: Frank Sinclair, Jay T. Scheuer, William Davis Lee, Peter L. Kellerman
  • Publication number: 20160365225
    Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component having one or more conductive beam optics. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current may be applied to the conductive beam optics of the component, in parallel, to selectively (e.g., individually) generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the component, and a vacuum pump for adjusting pressure of an environment of the component.
    Type: Application
    Filed: August 7, 2015
    Publication date: December 15, 2016
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Patent number: 8330127
    Abstract: Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: December 11, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Russell J. Low, Jay T. Scheuer, Alexander S. Perel, Craig R. Chaney, Neil J. Bassom
  • Publication number: 20110034014
    Abstract: A method of applying a silicide to a substrate while minimizing adverse effects, such as lateral diffusion of metal or “piping” is disclosed. The implantation of the source and drain regions of a semiconductor device are performed at cold temperatures, such as below 0° C. This cold implant reduces the structural damage caused by the impacting ions. Subsequently, a silicide layer is applied, and due to the reduced structural damage, metal diffusion and piping into the substrate is lessened. In some embodiments, an amorphization implant is performed after the implantation of dopants, but prior to the application of the silicide. By performing this pre-silicide implant at cold temperatures, similar results can be obtained.
    Type: Application
    Filed: August 4, 2010
    Publication date: February 10, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Christopher R. Hatem, Benjamin Colombeau, Thirumal Thanigaivelan, Kyu-Ha Shim, Jay T. Scheuer