Patents by Inventor Jay T. Scheuer

Jay T. Scheuer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240222070
    Abstract: An ion implanter to facilitate channeling of an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter comprises an ion source to generate an ion beam, a platen to support the workpiece having the crystalline structure, an Xray source to generate an Xray beam, wherein at least a portion of the Xray beam impacts the workpiece to produce diffracted Xrays, an Xray detector positioned to receive the diffracted Xrays, and a controller, in communication with the Xray source, the platen, and the Xray detector. The controller contains instructions, which enable the ion implanter to perform a rocking curve test after the workpiece is disposed on the platen and calculate an orientation of the platen for an ion implant process based on a result of the rocking curve test to facilitate channeling of the ion beam into the crystalline structure of the workpiece.
    Type: Application
    Filed: November 8, 2023
    Publication date: July 4, 2024
    Inventors: Stephen Krause, Gary J. Rosen, Matthew Gaucher, Jay T. Scheuer, Frank Sinclair, Jonathan Lowder, Pratim Palit, Daniel Hall
  • Publication number: 20240222072
    Abstract: An ion implanter to facilitate channeling of an ion beam into a crystalline structure of a workpiece is disclosed. The ion implanter comprises an ion source to generate an ion beam, a platen to support the workpiece having the crystalline structure, an Xray source to generate an Xray beam, wherein at least a portion of the Xray beam impacts the workpiece to produce diffracted Xrays, an Xray detector positioned to receive the diffracted Xrays, and a controller, in communication with the Xray source, the platen, and the Xray detector. The controller contains instructions, which enable the ion implanter to perform a rocking curve test after the workpiece is disposed on the platen and calculate an orientation of the platen for an ion implant process based on a result of the rocking curve test to facilitate channeling of the ion beam into the crystalline structure of the workpiece.
    Type: Application
    Filed: December 29, 2022
    Publication date: July 4, 2024
    Inventors: Stephen Krause, Gary J. Rosen, Matthew Gaucher, Jay T. Scheuer, Frank Sinclair
  • Publication number: 20230386785
    Abstract: Provided herein are approaches for optimizing a full horizontal scanned beam distance of an accelerator beam. In one approach, a method may include positioning a first Faraday cup along a first side of an intended beam-scan area, positioning a second Faraday cup along a second side of the intended beam-scan area, scanning an ion beam along the first and second sides of the intended beam-scan area, measuring a first beam current of the ion beam at the first Faraday cup and measuring a second beam current of the ion beam at the second Faraday cup, and determining an optimal scan distance of the ion beam across the intended beam-scan area based on the first beam current and the second beam current.
    Type: Application
    Filed: May 27, 2022
    Publication date: November 30, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Tyler Wills, George M. Gammel, Eric Donald Wilson, Jay T. Scheuer, Xiangdong He, Shardul Patel, Robert C. Lindberg
  • Patent number: 11810746
    Abstract: An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.
    Type: Grant
    Filed: September 13, 2021
    Date of Patent: November 7, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Alexandre Likhanskii, Alexander S. Perel, Jay T. Scheuer, Bon-Woong Koo, Robert C. Lindberg, Peter F. Kurunczi, Graham Wright
  • Patent number: 11651932
    Abstract: An ion source capable of extracting a ribbon ion beam with improved vertical angular uniformity is disclosed. The extraction plate and extraction optics are designed such that there is at least one non-uniform gap between adjacent components. A non-uniform gap may be effective in reducing angular spread non-uniformity of the extracted ribbon ion beam. Specifically, for a given gap in the Z direction, ions extracted from regions with lower plasma density may have more vertical angular spread. A larger gap in the Z direction between components in this region may make the vertical angular spread closer to the vertical angular spread of ions extracted from regions with higher plasma density. The non-uniform gap may be created by having an extraction plate that is flat or curved and electrodes that are flat, convex or concave. In certain embodiments, the non-uniform gap is located between the extraction plate and the suppression electrode.
    Type: Grant
    Filed: October 26, 2021
    Date of Patent: May 16, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Alexandre Likhanskii, Jay T. Scheuer, Sudhakar Mahalingam, Nevin Clay
  • Publication number: 20230131410
    Abstract: An ion source capable of extracting a ribbon ion beam with improved vertical angular uniformity is disclosed. The extraction plate and extraction optics are designed such that there is at least one non-uniform gap between adjacent components. A non-uniform gap may be effective in reducing angular spread non-uniformity of the extracted ribbon ion beam. Specifically, for a given gap in the Z direction, ions extracted from regions with lower plasma density may have more vertical angular spread. A larger gap in the Z direction between components in this region may make the vertical angular spread closer to the vertical angular spread of ions extracted from regions with higher plasma density. The non-uniform gap may be created by having an extraction plate that is flat or curved and electrodes that are flat, convex or concave. In certain embodiments, the non-uniform gap is located between the extraction plate and the suppression electrode.
    Type: Application
    Filed: October 26, 2021
    Publication date: April 27, 2023
    Inventors: Alexandre Likhanskii, Jay T. Scheuer, Sudhakar Mahalingam, Nevin Clay
  • Patent number: 11631567
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having an opening formed in a front half thereof nearest the extraction aperture, wherein a rear half of the tubular cathode furthest from the extraction aperture is closed.
    Type: Grant
    Filed: August 20, 2021
    Date of Patent: April 18, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Publication number: 20230080083
    Abstract: An ion source having an extraction plate with a variable thickness is disclosed. The extraction plate has a protrusion on its interior or exterior surface proximate the extraction aperture. The protrusion increases the thickness of the extraction aperture in certain regions. This increases the loss area in those regions, which serves as a sink for ions and electrons. In this way, the plasma density is decreased more significantly in the regions where the extraction aperture has a greater thickness. The shape of the protrusion may be modified to achieve the desired plasma uniformity. Thus, it may be possible to create an extracted ion beam having a more uniform ion density. In some tests, the uniformity of the beam current along the width direction was improved by between 20% and 50%.
    Type: Application
    Filed: September 13, 2021
    Publication date: March 16, 2023
    Inventors: Alexandre Likhanskii, Alexander S. Perel, Jay T. Scheuer, Bon-Woong Koo, Robert C. Lindberg, Peter F. Kurunczi, Graham Wright
  • Publication number: 20230082224
    Abstract: An ion source capable of extracting a ribbon ion beam with improved uniformity is disclosed. One of the walls of the ion source has a protrusion on its interior surface facing the chamber. The protrusion creates a loss area that serves as a sink for free electrons and ions. This causes a reduction in plasma density near the protrusion, and may improve the uniformity of the ribbon ion beam that is extracted from the ion source by modifying the beam current near the protrusion. The shape of the protrusion may be modified to achieve the desired uniformity. The protrusion may also be utilized with a cylindrical ion source. In certain embodiments, the protrusion is created by a plurality of mechanically adjustable protrusion elements.
    Type: Application
    Filed: September 13, 2021
    Publication date: March 16, 2023
    Inventors: Jay T. Scheuer, Graham Wright, Peter F. Kurunczi, Alexandre Likhanskii
  • Patent number: 11562885
    Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.
    Type: Grant
    Filed: June 18, 2021
    Date of Patent: January 24, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Thomas Stacy, Jay T. Scheuer, Eric D. Hermanson, Bon-Woong Koo, Tseh-Jen Hsieh
  • Patent number: 11495434
    Abstract: Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.
    Type: Grant
    Filed: September 28, 2020
    Date of Patent: November 8, 2022
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Patent number: 11437215
    Abstract: Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: September 6, 2022
    Assignee: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Antonella Cucchetti, Eric D. Hermanson, Frank Sinclair, Jay T. Scheuer, Robert C. Lindberg
  • Publication number: 20220037114
    Abstract: A beamline ion implanter and a method of operating a beamline ion implanter. A method may include performing an ion implantation procedure during a first time period on a first set of substrates, in a process chamber of the ion implanter, and performing a first pressure-control routine during a second time period by: introducing a predetermined gas to reach a predetermined pressure into at least a downstream portion of the beam-line for a second time period. The method may include, after completion of the first pressure-control routine, performing the ion implantation procedure on a second set of substrates during a third time period.
    Type: Application
    Filed: June 18, 2021
    Publication date: February 3, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Thomas Stacy, Jay T. Scheuer, Eric D. Hermanson, Bon-Woong Koo, Tseh-Jen Hsieh
  • Publication number: 20210383995
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having an opening formed in a front half thereof nearest the extraction aperture, wherein a rear half of the tubular cathode furthest from the extraction aperture is closed.
    Type: Application
    Filed: August 20, 2021
    Publication date: December 9, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Patent number: 11127557
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: September 21, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Publication number: 20210287872
    Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having a slot formed in a front-facing semi-cylindrical portion thereof disposed in a confronting relationship with the extraction aperture, wherein a rear-facing semi-cylindrical portion of the tubular cathode directed away from the extraction aperture is closed.
    Type: Application
    Filed: March 12, 2020
    Publication date: September 16, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bon-Woong Koo, Frank Sinclair, Alexandre Likhanskii, Svetlana Radovanov, Alexander Perel, Graham Wright, Jay T. Scheuer, Daniel Tieger, You Chia Li, Jay Johnson, Tseh-Jen Hsieh, Ronald Johnson
  • Publication number: 20210183609
    Abstract: Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.
    Type: Application
    Filed: December 13, 2019
    Publication date: June 17, 2021
    Applicant: APPLIED Materials, Inc.
    Inventors: Alexandre Likhanskii, Antonella Cucchetti, Eric D. Hermanson, Frank Sinclair, Jay T. Scheuer, Robert C. Lindberg
  • Patent number: 11037758
    Abstract: Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: June 15, 2021
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Publication number: 20210013001
    Abstract: Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.
    Type: Application
    Filed: September 28, 2020
    Publication date: January 14, 2021
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Kevin Anglin, William Davis Lee, Peter Kurunczi, Ryan Downey, Jay T. Scheuer, Alexandre Likhanskii, William M. Holber
  • Patent number: 10818469
    Abstract: An indirectly heated cathode ion source having a cylindrical housing with two open ends is disclosed. The cathode and repeller are sized to fit within the two open ends. These components may be inserted into the open ends, creating a small radial spacing that provides electrical isolation between the cylindrical housing and the cathode and repeller. In another embodiment, the repeller may be disposed from the end of the cylindrical housing creating a small axial spacing. In another embodiment, insulators are used to hold the cathode and repeller in place. This design results in a reduced distance between the cathode column and the extraction aperture, which may be beneficial to the generation of ion beams of certain species.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: October 27, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Alexander S. Perel, Jay T. Scheuer, Graham Wright