Abstract: A charged particle beam apparatus includes a charged particle beam source for directing a charged particle beam along a beam path in a downstream direction to a target, and a processing station that defines a target chamber. The processing station includes a chamber divider which divides the target chamber into upstream and downstream regions during charged particle beam processing of the target, the target being located in the downstream region. The divider has an aperture therethrough sized to permit passage of the ion beam to the target without substantial blockage and to limit backflow of gas into the upstream region of the chamber. The divider minimizes the beam volume which is exposed to extraneous species generated at the target and thereby reduces the probability of beam-altering collisions.

Abstract: Methods and apparatus for controlled ion implantation of a workpiece, such as a semiconductor wafer, are provided. The method includes generating an ion beam, scanning the ion beam across the workpiece in a first direction to produce scan lines, translating the workpiece in a second direction relative to the ion beam so that the scan lines are distributed over the workpiece with a standard spatial frequency, acquiring a dose map of the workpiece, and initiating a dose correction implant and controlling the spatial frequency of the scan lines during the dose correction, if the acquired dose map is not within specification and a required dose correction is less than a minimum dose correction that can be obtained with the standard spatial frequency of the scan lines.

Abstract: A charged particle beam apparatus includes a charged particle beam source for directing a charged particle beam along a beam path in a downstream direction to a target, and a processing station that defines a target chamber. The processing station includes a chamber divider which divides the target chamber into upstream and downstream regions during charged particle beam processing of the target, the target being located in the downstream region. The divider has an aperture therethrough sized to permit passage of the ion beam to the target without substantial blockage and to limit backflow of gas into the upstream region of the chamber. The divider minimizes the beam volume which is exposed to extraneous species generated at the target and thereby reduces the probability of beam-altering collisions.