Patents by Inventor Jay T. Scheuer

Jay T. Scheuer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110034014
    Abstract: A method of applying a silicide to a substrate while minimizing adverse effects, such as lateral diffusion of metal or “piping” is disclosed. The implantation of the source and drain regions of a semiconductor device are performed at cold temperatures, such as below 0° C. This cold implant reduces the structural damage caused by the impacting ions. Subsequently, a silicide layer is applied, and due to the reduced structural damage, metal diffusion and piping into the substrate is lessened. In some embodiments, an amorphization implant is performed after the implantation of dopants, but prior to the application of the silicide. By performing this pre-silicide implant at cold temperatures, similar results can be obtained.
    Type: Application
    Filed: August 4, 2010
    Publication date: February 10, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Christopher R. Hatem, Benjamin Colombeau, Thirumal Thanigaivelan, Kyu-Ha Shim, Jay T. Scheuer
  • Patent number: 7878145
    Abstract: A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.
    Type: Grant
    Filed: June 2, 2004
    Date of Patent: February 1, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ziwei Fang, Sung-Cheon Ko, Edmund J. Winder, Daniel Distaso, Ludovic Godet, Bon Woong Koo, Jay T. Scheuer
  • Publication number: 20100155600
    Abstract: An non-Faraday ion dose measurement device is positioned within a plasma process chamber and includes a sensor located above a workpiece within the chamber. The sensor is configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma implantation process. The sensor outputs a current signal proportional to the detected secondary electrons. A current circuit subtracts the detected secondary current generated from the sensor and subtracts it from a bias current supplied to the workpiece within the chamber. The difference between the currents provides a measurement of the ion dose current calculated in situ and during the implantation process.
    Type: Application
    Filed: December 23, 2008
    Publication date: June 24, 2010
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Joseph P Dzengeleski, Timothy J. Miler, Jay T. Scheuer, Christopher J. Leavitt
  • Publication number: 20090242793
    Abstract: Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.
    Type: Application
    Filed: March 31, 2008
    Publication date: October 1, 2009
    Inventors: Russell J. Low, Jay T. Scheuer, Alexander S. Perel, Craig R. Chaney, Neil J. Bassom
  • Publication number: 20090166555
    Abstract: The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants.
    Type: Application
    Filed: December 28, 2007
    Publication date: July 2, 2009
    Inventors: Joseph C. Olson, Jay T. Scheuer
  • Publication number: 20080160212
    Abstract: A method and apparatuses for providing improved electrical contact to a semiconductor wafer during plasma processing applications are disclosed. In one embodiment, an apparatus includes a wafer platen for supporting the wafer; and a plurality of electrical contact elements, each of the plurality of electrical contact elements are configured to provide a path for supplying a bias voltage from a bias power supply to the wafer on the wafer platen. The plurality of electrical contact elements are also geometrically arranged such that at least one electrical contact element contacts an inner surface region (e.g., region between a center of wafer and a distance approximately half of the radius of the wafer) and at least one electrical contact element contacts an outer annular surface region (e.g., region between an outer edge of wafer and a distance approximately half of the radius of the wafer).
    Type: Application
    Filed: December 27, 2006
    Publication date: July 3, 2008
    Inventors: Bon-Woong Koo, Steven R. Walther, Christopher J. Leavitt, Justin Tocco, Sung-Hwan Hyun, Timothy J. Miller, Jay T. Scheuer, Atul Gupta, Vikram Singh, Deven Raj
  • Publication number: 20080026133
    Abstract: A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.
    Type: Application
    Filed: June 2, 2004
    Publication date: January 31, 2008
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ziwei Fang, Sung-Cheon Ko, Edmund J. Winder, Daniel Distaso, Ludovic Godet, Bon Woong Koo, Jay T. Scheuer
  • Patent number: 7126808
    Abstract: An apparatus is provided for handling workpieces, such as semiconductor wafers, during semiconductor processing. The apparatus includes a wafer platen having a plurality of channels each extending from a top surface to a bottom surface of the wafer platen, a plurality of lift pins in alignment with the channels, and a mechanism for engaging the lift pins in a loading position of the workpiece, a clamping position of the workpiece so that desired semiconductor processes may be performed to the workpiece, and a lift off position for removing the workpiece from the wafer platen after the semiconductor processes are completed. The mechanism places the lift pins below the surface of the wafer platen in the load position and then raises the lift pins to a first predetermined distance above the surface of the wafer platen in the clamp position such that the first predetermined distance allows the workpiece to be clamped to the wafer platen.
    Type: Grant
    Filed: April 1, 2004
    Date of Patent: October 24, 2006
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Bon-Woong Koo, Bjorn O. Pedersen, Jay T. Scheuer, Erik A. Mitchell
  • Publication number: 20040196616
    Abstract: An apparatus is provided for handling workpieces, such as semiconductor wafers, during semiconductor processing. The apparatus includes a wafer platen having a plurality of channels each extending from a top surface to a bottom surface of the wafer platen, a plurality of lift pins in alignment with the channels, and a mechanism for engaging the lift pins in a loading position of the workpiece, a clamping position of the workpiece so that desired semiconductor processes may be performed to the workpiece, and a lift off position for removing the workpiece from the wafer platen after the semiconductor processes are completed. The mechanism places the lift pins below the surface of the wafer platen in the load position and then raises the lift pins to a first predetermined distance above the surface of the wafer platen in the clamp position such that the first predetermined distance allows the workpiece to be clamped to the wafer platen.
    Type: Application
    Filed: April 1, 2004
    Publication date: October 7, 2004
    Inventors: Bon-Woong Koo, Bjorn O. Pedersen, Jay T. Scheuer, Erik A. Mitchell
  • Patent number: 6791097
    Abstract: A charged particle beam apparatus includes a charged particle beam source for directing a charged particle beam along a beam path in a downstream direction to a target, and a processing station that defines a target chamber. The processing station includes a chamber divider which divides the target chamber into upstream and downstream regions during charged particle beam processing of the target, the target being located in the downstream region. The divider has an aperture therethrough sized to permit passage of the ion beam to the target without substantial blockage and to limit backflow of gas into the upstream region of the chamber. The divider minimizes the beam volume which is exposed to extraneous species generated at the target and thereby reduces the probability of beam-altering collisions.
    Type: Grant
    Filed: January 16, 2002
    Date of Patent: September 14, 2004
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Jay T. Scheuer, Anthony Renau, Eric D. Hermanson
  • Publication number: 20020175297
    Abstract: Methods and apparatus for controlled ion implantation of a workpiece, such as a semiconductor wafer, are provided. The method includes generating an ion beam, scanning the ion beam across the workpiece in a first direction to produce scan lines, translating the workpiece in a second direction relative to the ion beam so that the scan lines are distributed over the workpiece with a standard spatial frequency, acquiring a dose map of the workpiece, and initiating a dose correction implant and controlling the spatial frequency of the scan lines during the dose correction, if the acquired dose map is not within specification and a required dose correction is less than a minimum dose correction that can be obtained with the standard spatial frequency of the scan lines.
    Type: Application
    Filed: May 21, 2002
    Publication date: November 28, 2002
    Inventors: Jay T. Scheuer, Gregory R. Gibilaro
  • Publication number: 20020121613
    Abstract: A charged particle beam apparatus includes a charged particle beam source for directing a charged particle beam along a beam path in a downstream direction to a target, and a processing station that defines a target chamber. The processing station includes a chamber divider which divides the target chamber into upstream and downstream regions during charged particle beam processing of the target, the target being located in the downstream region. The divider has an aperture therethrough sized to permit passage of the ion beam to the target without substantial blockage and to limit backflow of gas into the upstream region of the chamber. The divider minimizes the beam volume which is exposed to extraneous species generated at the target and thereby reduces the probability of beam-altering collisions.
    Type: Application
    Filed: January 16, 2002
    Publication date: September 5, 2002
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Jay T. Scheuer, Anthony Renau, Eric D. Hermanson