Patents by Inventor Jea Shik Shin

Jea Shik Shin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9134276
    Abstract: A bulk acoustic wave resonator (BAWR) sensor is provided. The BAWR sensor includes a signal BAWR that measures a resonance frequency that is modified due to a reaction with a target material, a reference BAWR that measures a reference resonance frequency without reaction with an external environment, and a sensing unit that senses the target material, based on the modified resonance frequency and the reference resonance frequency.
    Type: Grant
    Filed: September 14, 2011
    Date of Patent: September 15, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In Sang Song, Sang Uk Son, Jea Shik Shin, Hyung Rak Kim
  • Patent number: 9054673
    Abstract: A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.
    Type: Grant
    Filed: November 1, 2013
    Date of Patent: June 9, 2015
    Assignees: Samsung Electronics Co., Ltd., Korea University Industrial and Academic Collaboration Foundation
    Inventors: Yun-kwon Park, Byeoung-ju Ha, Byeong-Kwon Ju, Jae-sung Rieh, In-sang Song, Jin-woo Lee, Jea-shik Shin, Young-min Park
  • Publication number: 20150155852
    Abstract: Provided is a filter using bulk acoustic wave resonators (BAWRs), the filter comprising two or more BAWRs connected in series or in parallel to each other, one or more LC elements being connected in series or in parallel to the respective BAWRs, thus constituting a BAWR set.
    Type: Application
    Filed: June 12, 2012
    Publication date: June 4, 2015
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jae Chun Lee, Duck Hwan Kim, Chul Soo Kim, Ho Soo Park, Sang Uk Son, In Sang Song, Jea Shik Shin, Moon Chul Lee, Jing Cui
  • Publication number: 20150137906
    Abstract: Provided are a matching segment circuit, to which a radio frequency (RF) is applied, and an RF integrated device using the matching segment circuit. The matching segment circuit to which an RF is applied may include an input end connected to a first RF device, a parallel segment having a first capacitor and a first inductor connected in parallel, a second inductor connected to the parallel segment in series, and an output end connected to a second RF device. The first capacitor, the first inductor, and the second inductor may be configured so that an impedance of the first RF device and an impedance of the second RF device may match.
    Type: Application
    Filed: January 26, 2015
    Publication date: May 21, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Duck Hwan KIM, In Sang SONG, Chul Soo KIM, Young Il KIM, Jea Shik SHIN
  • Publication number: 20150097638
    Abstract: An acoustic filter includes a signal input port, a ladder-type filter, a first branch ladder-type filter, a second branch ladder-type filter, and a signal output port. The first branch ladder-type filter and the second branch ladder-type filter are connected in parallel to each other. The signal input port is connected to the ladder-type filter. The ladder-type filter circuit is connected in series to the first branch ladder-type filter and the second branch ladder-type filter. The first branch ladder-type filter circuit and the second branch ladder-type filter are connected to the signal output port.
    Type: Application
    Filed: May 27, 2014
    Publication date: April 9, 2015
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jie Ai YU, Duck Hwan KIM, Ho Soo PARK, In Sang SONG, Jea Shik SHIN
  • Patent number: 8987666
    Abstract: A temperature sensing apparatus and method are described to detect a change in a frequency due to a change in a temperature. An infrared light sensing apparatus and method are also provided. The temperature sensing apparatus may include an electrode to generate an electrical signal, a piezoelectric layer to convert the electrical signal into an acoustic wave, and a temperature sensitive layer formed by doping impurities in one or more structures formed on a substrate. Additionally, the infrared light sensing apparatus may convert into heat infrared light incident to an infrared light absorption layer, using an infrared light reflection layer and the infrared light absorption layer. A temperature sensitive layer may detect a change in a resonant frequency based on a change in a temperature of the heat, and may detect a change in infrared light based on the change in the resonant frequency.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: March 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ho Soo Park, In Sang Song, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, Jea Shik Shin, Cui Jing
  • Patent number: 8963654
    Abstract: A Dual Input, Dual Output filtering apparatus using a Bulk Acoustic Wave Resonators (BAWR), and a resonator used as the BAWR may be provided. A Dual Input, Dual Output filtering apparatus may include a plurality of BAWRs connected in series and parallel.
    Type: Grant
    Filed: July 16, 2010
    Date of Patent: February 24, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yun Kwon Park, In Sang Song, Duck Hwan Kim, Chul Soo Kim, Jea Shik Shin
  • Patent number: 8918063
    Abstract: A system for transmitting/receiving a multi-band Radio Frequency (RF) signal using a Dual Input, Dual Output filter is provided. The system may include a Single-Input Single-Output (SISO) filter and the Dual Input, Dual Output filter. The system for transmitting/receiving a multi-band Radio Frequency (RF) may be implemented in a Radio Frequency (RF) region, which includes an area from an end of an antenna to an end of a mixer in a mobile communication.
    Type: Grant
    Filed: July 16, 2010
    Date of Patent: December 23, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: In Sang Song, Duck Hwan Kim, Chul Soo Kim, Yun Kwon Park, Jea Shik Shin
  • Patent number: 8902021
    Abstract: A Radio Frequency (RF) duplexer including Bulk Acoustic Wave Resonators (BAWRs) and an RF filter including BAWRs are provided. The RF duplexer may convert the received signal into a balance signal and output the balance signal via a dual-output port. The RF duplexer may also include a BAWR receiving filter unit including an input end to receive the balance signal from the dual-output port, and an output end used for dual output. The RF duplexer may also include a BAWR transmitting filter unit to transmit a transmitted signal to the antenna via a single-output port.
    Type: Grant
    Filed: May 16, 2011
    Date of Patent: December 2, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jea Shik Shin, Soo Chul Kim, In Sang Song, Young Il Kim, Duck Hwan Kim, Hyung Rak Kim, Jae Chun Lee
  • Patent number: 8896396
    Abstract: Provided are low pass filters using a bulk acoustic wave resonator (BAWR). A low pass filter may include an input terminal configured to be connected with a first radio frequency (RF) device, an output terminal configured to be connected with a second RF device, a parallel segment including a first BAWR, a third BAWR, and a fifth BAWR that may be connected in parallel with each other to a reference potential, a first series segment having a second BAWR and a first inductor, and a second series segment having a fourth BAWR and a second inductor, and connected in series with the first series segment.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: November 25, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul Soo Kim, Jun Chul Kim, In Sang Song, Young Il Kim, Duck Hwan Kim, Sang Uk Son, Jea Shik Shin, Hyung Rak Kim
  • Publication number: 20140339959
    Abstract: A thin film bulk acoustic resonator and a method of manufacturing the same is disclosed. The thin film bulk acoustic resonator includes an acoustic resonator including a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; an air gap disposed below the acoustic resonator and above a substrate to reflect the acoustic wave; and an anchor disposed on each of both surfaces of the air gap and having the same thickness as the air gap.
    Type: Application
    Filed: June 7, 2012
    Publication date: November 20, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Moon Chul Lee, In Sang Song, Duck Hwan Kim, Chul Soo Kim, Sang Uk Son, Jea Shik Shin, Ho Soo Park, Jing Cui
  • Patent number: 8854157
    Abstract: Disclosed is a balun including a film bulk acoustic resonator (FBAR). The balun may be implemented using the FBAR to fabricate a small sized balun. Also, the balun may be implemented using the FBAR, thereby reducing a difference in two outputs.
    Type: Grant
    Filed: July 12, 2010
    Date of Patent: October 7, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Duck Hwan Kim, Dal Ahn, Chul Soo Kim, In Sang Song, Yun Kwon Park, Jea Shik Shin, Hyung Rak Kim
  • Patent number: 8824163
    Abstract: Provided is a structure and disposing method of a radio frequency (RF) layered module using three dimensional (3D) vertical wiring. A first wafer in the RF layered module having the 3D vertical wiring may include a first RF device and at least one first via-hole. A second wafer may include a second RF device and at least one second via-hole disposed at a location corresponding to the at least one first via-hole. A vertical wiring may connect the at least one first via-hole and the at least one second via-hole. The vertical wiring may be configured to be connected to an external device through a bottom surface of the at least one first via-hole or a top surface of the at least one second via-hole.
    Type: Grant
    Filed: August 25, 2011
    Date of Patent: September 2, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Il Kim, In Sang Song, Duck Hwan Kim, Chul Soo Kim, Yun Kwon Park, Jea Shik Shin, Hyung Rak Kim, Jae Chun Lee
  • Publication number: 20140191825
    Abstract: A radio frequency filter and a manufacturing method thereof are provided. A radio frequency filter includes bulk acoustic wave resonators (BAWRs), the BAWRs including first BAWRs connected in series, second BAWRs connected in parallel, or a combination thereof.
    Type: Application
    Filed: November 12, 2013
    Publication date: July 10, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang Uk SON, Ho Soo PARK, Jea Shik SHIN, Duck Hwan KIM, Chul Soo KIM, In Sang SONG, Moon Chul LEE
  • Publication number: 20140191185
    Abstract: A method of fabricating a nano resonator, includes forming a line pattern in a first substrate, and transferring the line pattern to a second substrate including a gate electrode. The method further includes forming a source electrode and a drain electrode on the transferred line pattern.
    Type: Application
    Filed: December 2, 2013
    Publication date: July 10, 2014
    Applicants: Korea University Industrial & Academic Collaboration Foundation, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Duck Hwan KIM, In Sang SONG, Jea Shik SHIN, Ho Soo PARK, Jae-Sung RIEH, Byeong Kwon JU
  • Patent number: 8773220
    Abstract: Disclosed are a radio frequency (RF) front end module and a multi-band communication module using the RF front end module. The RF front end module may use a plurality of bandpass filters and at least one diplexer being connected to at least one of front ends or rear ends of two bandpass filters of the plurality of bandpass filters.
    Type: Grant
    Filed: June 18, 2010
    Date of Patent: July 8, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chul Soo Kim, Jun Chul Kim, Dong Su Kim, In Sang Song, Duck Hwan Kim, Yun Kwon Park, Jea Shik Shin
  • Publication number: 20140077897
    Abstract: A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.
    Type: Application
    Filed: November 1, 2013
    Publication date: March 20, 2014
    Applicants: KOREA UNIVERSITY INDUSTRIAL AND ACADEMIC COLLABORATION FOUNDATION, SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yun-kwon PARK, Byeoung-ju HA, Byeong-Kwon Ju, Jae-sung RIEH, In-sang SONG, Jin-woo LEE, Jea-shik SHIN, Young-min PARK
  • Patent number: 8659098
    Abstract: A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.
    Type: Grant
    Filed: February 18, 2009
    Date of Patent: February 25, 2014
    Assignees: Samsung Electronics Co., Ltd., Korea University Industrial and Academic Collaboration Foundation
    Inventors: Yun-Kwon Park, Byeoung-Ju Ha, Byeong-Kwon Ju, Jae-Sung Rieh, In-Sang Song, Jin-Woo Lee, Jea-Shik Shin, Young-Min Park
  • Patent number: 8660043
    Abstract: A communication apparatus to support multiband communication is provided. The communication apparatus may be applicable to, for example, a duplexer module for the multiband communication. The communication apparatus may be manufactured to be small and light by simplifying a circuit structure of the duplexer module.
    Type: Grant
    Filed: October 13, 2010
    Date of Patent: February 25, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young Kim, II, In Sang Song, Duck Hwan Kim, Chul Soo Kim, Jea Shik Shin, Yun Kwon Park
  • Patent number: 8653909
    Abstract: An apparatus for wireless power transmission is disclosed. According to an exemplary aspect, the wireless power transmission apparatus includes a high Q low frequency near magnetic field resonator having characteristics of a metamaterial. Accordingly, manufacturing of a compact power supply capable of wirelessly supplying power to mobile communication terminals or multimedia terminals is possible. By using a zeroth-order resonator with a DNG or ENG structure, a small-sized power supply with a simple configuration may be manufactured.
    Type: Grant
    Filed: November 17, 2009
    Date of Patent: February 18, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-seok Park, Sang-wook Kwon, Jea-shik Shin, Young-tack Hong