Abstract: A Radio Frequency (RF) duplexer including Bulk Acoustic Wave Resonators (BAWRs) and an RF filter including BAWRs are provided. The RF duplexer may convert the received signal into a balance signal and output the balance signal via a dual-output port. The RF duplexer may also include a BAWR receiving filter unit including an input end to receive the balance signal from the dual-output port, and an output end used for dual output. The RF duplexer may also include a BAWR transmitting filter unit to transmit a transmitted signal to the antenna via a single-output port.

Abstract: A resonator and a method of manufacturing a resonator are provided. The resonator includes a sacrificial layer formed on a substrate, and a resonant structure formed on the sacrificial layer, the resonant structure comprising a carbon nano-substance layer and a silicon carbide layer.

Abstract: An array variable capacitor apparatus includes a line unit including a ground line and a signal line which operates as a lower electrode; and a plurality of plates which are engaged with the line unit to generate capacitance and which operate as upper electrodes, the plurality of plates being arranged in an array pattern and having different degrees of stiffness.

Abstract: An inductor embedded in a substrate, including a substrate, a coil electrode formed by filling a metal in a spiral hole formed on the substrate, an insulation layer formed on the substrate, and an external connection pad formed on the insulation layer to be connected to the coil electrode. The inductor-embedded substrate can be used as a cap for a micro device package by forming a cavity on its bottom surface.

Abstract: A phase shifter using a Bulk Acoustic Wave Resonators (BAWR) is provided. The phase shifter using a BAWR may use a property of a phase shift with respect to a frequency of the BAWR, and also use at least one capacitor, at least one inductor, and the like.

Abstract: Disclosed is a balun including a film bulk acoustic resonator (FBAR). The balun may be implemented using the FBAR to fabricate a small sized balun. Also, the balun may be implemented using the FBAR, thereby reducing a difference in two outputs.

Abstract: A communication apparatus to support multiband communication is provided. The communication apparatus may be applicable to, for example, a duplexer module for the multiband communication. The communication apparatus may be manufactured to be small and light by simplifying a circuit structure of the duplexer module.

Abstract: A Dual Input, Dual Output filtering apparatus using a Bulk Acoustic Wave Resonators (BAWR), and a resonator used as the BAWR may be provided. A Dual Input, Dual Output filtering apparatus may include a plurality of BAWRs connected in series and parallel.

Abstract: Disclosed are a radio frequency (RF) front end module and a multi-band communication module using the RF front end module. The RF front end module may use a plurality of bandpass filters and at least one diplexer being connected to at least one of front ends or rear ends of two bandpass filters of the plurality of bandpass filters.

Abstract: A tunable resonator is provided. The tunable resonator includes a film bulk acoustic resonator (FBAR) for performing a resonance, and at least one driver which is arranged at a side of the FBAR and is deformed and brought into contact with the FBAR by an external signal, thereby changing a resonance frequency of the FBAR. Accordingly, a multiband integration and a one-chip manufacture can be implemented simply using a micro electro mechanical system (MEMS) technology and a mass production is possible.

Abstract: An apparatus for wireless power transmission is disclosed. According to an exemplary aspect, the wireless power transmission apparatus includes a high Q low frequency near magnetic field resonator having characteristics of a metamaterial. Accordingly, manufacturing of a compact power supply capable of wirelessly supplying power to mobile communication terminals or multimedia terminals is possible. By using a zeroth-order resonator with a DNG or ENG structure, a small-sized power supply with a simple configuration may be manufactured.

Abstract: A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.

Abstract: An array variable capacitor apparatus includes a line unit including a ground line and a signal line which operates as a lower electrode; and a plurality of plates which are engaged with the line unit to generate capacitance and which operate as upper electrodes, the plurality of plates being arranged in an array pattern and having different degrees of stiffness.

Abstract: A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.

Abstract: A Micro ElectroMechanical System (MEMS) switch is provided. The MEMS switch includes a ground, a moving unit moveable according to a driving signal, for connecting the input to the output or disconnecting the input from the output, and an electrode unit arranged in the configuration of a protrusion formed on a portion of the round, to induce a leakage signal generated between the input and the output to move toward the ground.

Abstract: A tunable resonator is provided. The tunable resonator includes a film bulk acoustic resonator (FBAR) for performing a resonance, and at least one driver which is arranged at a side of the FBAR and is deformed and brought into contact with the FBAR by an external signal, thereby changing a resonance frequency of the FBAR. Accordingly, a multiband integration and a one-chip manufacture can be implemented simply using a micro electro mechanical system (MEMS) technology and a mass production is possible.

Abstract: A wafer level package includes a device wafer having a micro device, and bonding pads which are connected to the micro device, and formed at one surface of the device wafer, via connectors extending from the bonding pads to the other surface of the device wafer, external bonding pads formed at the other surface of the device wafer and connected to the bonding pads through the via connectors, and a cap structure bonded to one surface of the device wafer so as to allow the micro device to be insulated and hermetically sealed.

Abstract: A multiband receiving apparatus and multiband transmitting apparatus using a tunable band is provided. The receiving apparatus includes a receiving unit for receiving radio frequency (RF) signals, and a tunable filter unit for selectively outputting the received RF signals. As a result, a complicated RF transceiving system is simplified, and time and cost for developing and designing a transceiving apparatus are reduced.

Abstract: An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material.

Abstract: A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer, a plurality of elements distanced from each other on a top portion of a device wafer, first sealing parts formed on the top portion of the device wafer, and a plurality of first ground planes formed between the plurality of elements. A cap wafer is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts, and cavities. Second sealing parts are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes cover the plurality of ground posts. Via holes vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.