Abstract: A Bulk Acoustic Wave Resonator (BAWR), a method of manufacturing of the BAWR, and duplexer including the BAWR are provided. The BAWR may include a first substrate including a via hole formed in a predetermined area of a bottom surface of the first substrate. A first air cavity may be formed above the first substrate, and a first lamination resonating portion may be laminated above the first air cavity in sequence of a lower electrode, a piezoelectric layer, and an upper electrode. A second air cavity may be formed above the first substrate, and a second lamination resonating portion may be laminated above the second air cavity in sequence of the lower electrode, the piezoelectric layer, and the upper electrode. The first lamination resonating portion and the second lamination resonating portion may be connected via either the lower electrode or the upper electrode.

Abstract: A balance filter packaging chip having a balun mounted therein and a manufacturing method thereof are provided. The balance filter packaging chip includes a device substrate; a balance filter mounted on the device substrate; a bonding layer stacked on a certain area of the device substrate; a packaging substrate having a cavity formed over the balance filter, and combined with the device substrate by the bonding layer; a balun located on a certain area over the packaging substrate; and an insulator layer for passivating the balun. Accordingly, the present invention can reduce an element size and simplify a manufacturing process.

Abstract: A method of measuring biological sample properties and a biological sample property measuring apparatus is provided. A method of measuring biological sample properties includes disposing a biomaterial to contact a sensing unit, detecting a radio frequency (RF) signal flowing through the sensing unit, and obtaining an RF property indicator of the biomaterial based on the detected RF signal.

Abstract: A phase shifter using a Bulk Acoustic Wave Resonators (BAWR) is provided. The phase shifter using a BAWR may use a property of a phase shift with respect to a frequency of the BAWR, and also use at least one capacitor, at least one inductor, and the like.

Abstract: A filter and a transceiver in a radio frequency (RF) band, using a bulk acoustic wave resonator (BAWR), are provided. The RF filter includes at least one low temperature coefficient of frequency (TCF) BAWR. The RF filter further includes at least one high quality factor (Q) BAWR including a high Q compared to the at least one low TCF BAWR, the at least one low TCF BAWR including a low TCF compared to the at least one high Q BAWR.

Abstract: A nano scale resonator, a nano scale sensor, and a fabrication method thereof are provided. The nano scale resonator includes a resonance unit of nano scale configured to resonate based on an applied signal, and an anchor on a substrate, the anchor being configured to support the resonance unit, the anchor having an air gap within boundaries of the anchor, the resonance unit, and the substrate, the air gap being configured to reflect a vertical wave occurring in the resonance unit.

Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.

Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include a first electrode, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer. In various aspects, at least one of the first electrode, the piezoelectric layer, and the second electrode are formed of a carbon-based material.

Abstract: Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.

Abstract: A temperature sensing apparatus and method are described to detect a change in a frequency due to a change in a temperature. An infrared light sensing apparatus and method are also provided. The temperature sensing apparatus may include an electrode to generate an electrical signal, a piezoelectric layer to convert the electrical signal into an acoustic wave, and a temperature sensitive layer formed by doping impurities in one or more structures formed on a substrate. Additionally, the infrared light sensing apparatus may convert into heat infrared light incident to an infrared light absorption layer, using an infrared light reflection layer and the infrared light absorption layer. A temperature sensitive layer may detect a change in a resonant frequency based on a change in a temperature of the heat, and may detect a change in infrared light based on the change in the resonant frequency.

Abstract: A phase shifter using a Bulk Acoustic Wave Resonators (BAWR) is provided. The phase shifter using a BAWR may use a property of a phase shift with respect to a frequency of the BAWR, and also use at least one capacitor, at least one inductor, and the like.

Abstract: A resonator and a method of manufacturing a resonator are provided. The resonator includes a sacrificial layer formed on a substrate, and a resonant structure formed on the sacrificial layer, the resonant structure comprising a carbon nano-substance layer and a silicon carbide layer.

Abstract: A bulk acoustic wave resonator (BAWR) includes a bulk acoustic resonance unit and at least one compensation layer. The bulk acoustic resonance unit includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode. The first electrode, the second electrode, and the piezoelectric layer each include a material that modifies a resonance frequency based on a temperature, and the at least one compensation layer includes a material that adjusts the resonance frequency modified based on the temperature in a direction opposite to a direction of the modification.

Abstract: Provided are low pass filters using a bulk acoustic wave resonator (BAWR). A low pass filter may include an input terminal configured to be connected with a first radio frequency (RF) device, an output terminal configured to be connected with a second RF device, a parallel segment including a first BAWR, a third BAWR, and a fifth BAWR that may be connected in parallel with each other to a reference potential, a first series segment having a second BAWR and a first inductor, and a second series segment having a fourth BAWR and a second inductor, and connected in series with the first series segment.

Abstract: A resonator and a method for manufacturing a resonator are provided. The method may include doping a wafer, and forming on the wafer a substrate, a drain electrode, a source electrode, a gate electrode, and at least one nanowire.

Abstract: Provided are a matching segment circuit, to which a radio frequency (RF) is applied, and an RF integrated device using the matching segment circuit. The matching segment circuit to which an RF is applied may include an input end connected to a first RF device, a parallel segment having a first capacitor and a first inductor connected in parallel, a second inductor connected to the parallel segment in series, and an output end connected to a second RF device. The first capacitor, the first inductor, and the second inductor may be configured so that an impedance of the first RF device and an impedance of the second RF device may match.

Abstract: A bulk acoustic wave resonator (BAWR) sensor is provided. The BAWR sensor includes a signal BAWR that measures a resonance frequency that is modified due to a reaction with a target material, a reference BAWR that measures a reference resonance frequency without reaction with an external environment, and a sensing unit that senses the target material, based on the modified resonance frequency and the reference resonance frequency.

Abstract: Provided is a structure and disposing method of a radio frequency (RF) layered module using three dimensional (3D) vertical wiring. A first wafer in the RF layered module having the 3D vertical wiring may include a first RF device and at least one first via- hole. A second wafer may include a second RF device and at least one second via-hole disposed at a location corresponding to the at least one first via-hole. A vertical wiring may connect the at least one first via-hole and the at least one second via-hole. The vertical wiring may be configured to be connected to an external device through a bottom surface of the at least one first via-hole or a top surface of the at least one second via-hole.

Abstract: A Bulk Acoustic Wave Resonator (BAWR), a method of manufacturing of the BAWR, and duplexer including the BAWR are provided. The BAWR may include a first substrate including a via hole formed in a predetermined area of a bottom surface of the first substrate. A first air cavity may be formed above the first substrate, and a first lamination resonating portion may be laminated above the first air cavity in sequence of a lower electrode, a piezoelectric layer, and an upper electrode. A second air cavity may be formed above the first substrate, and a second lamination resonating portion may be laminated above the second air cavity in sequence of the lower electrode, the piezoelectric layer, and the upper electrode. The first lamination resonating portion and the second lamination resonating portion may be connected via either the lower electrode or the upper electrode.

Abstract: A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.