Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

Abstract: An audio-visual system may include a housing comprising an open upper end and a storage space, an audio-visual device installed inside the housing and exposable through the open upper end, and a lifting device configured to expose or store the audio-visual device inside the housing through the open upper end. The audio-visual device may include a display, a speaker, and a processor configured to control the audio-visual system to operate in a first mode for outputting media art content while the display is stored in the housing according to a first event, operate in a second mode for outputting audio content through the speaker while part of the display is exposed through the open upper end according to a second event, and operate in a third mode for outputting a visual content while the entire display is exposed through the open upper end according to a third event.

Abstract: A component used in an air conditioner includes a substrate and a nano-coating formed on a surface of the substrate, wherein the nano-coating includes a lower coating formed on the surface of the substrate; and an upper coating formed on the upper surface of the lower coating, a coating composition of the upper coating includes nanoparticles having a diameter of 10 nm to 30 nm, and an interval between adjacent nanoparticles among the plurality of nanoparticles located on a surface of the upper coating is 10 nm to 30 nm.

Abstract: Disclosed is a cosmetic composition for skin soothing. The cosmetic composition includes, as active ingredients, exosomes derived from naturally occurring deer antler velvet. The cosmetic composition can effectively soothe the skin whose condition has been abnormally altered (such as atopic dermatitis, inflammation, erythema, oxidation, cytotoxic agents in the skin, loss of moisture, melasma, itching, roughness or wrinkles) by various causes.

Abstract: A refrigerator includes a deodorizer installed on an upper surface of a storage compartment. The deodorizer includes a housing in which a flow path is provided, a suction port provided on a lower surface of the housing to suck air, a discharge port provided in the front of the suction port to discharge air, a photocatalytic deodorizing filter disposed at an inner side of the suction port, and a filter light source configured to irradiate light to the photocatalytic deodorizing filter, the flow path is configured to guide air from a rear lower side where the suction port is positioned to a front lower side where the discharge port is positioned, and the filter light source is disposed above the photocatalytic deodorizing filter to face the photocatalytic deodorizing filter in a state of being spaced apart from each other, and positioned above air passing through the flow path.

Abstract: Novel intron fragments are provided. The intron fragments can increase gene expression to levels equal to or higher than those achieved by the full-length intron while maintaining their ability to increase gene expression even when combined with various types of promoters and splicing donors. Particularly, the intron fragments enable loading of larger transgenes when used in genetic information delivery systems whose size is limited, for example, adeno-associated viruses (AAVs) and rhabdoviruses. Therefore, the use of the intron fragments is expected to extend the range of therapeutic genes.

Abstract: A cooking appliance having an improved structure capable of improving visibility to enable a user to clearly look at the inside of the cooking chamber during cooking includes a main body having the cooking chamber and a door disposed at the main chamber to open or close the cooking chamber, the door including a shielding member woven with conductive wires and a fixing member to electrically connect the shielding member with a door frame of the door. Electromagnetic waves generated in the cooking chamber can be prevented from leaking to the outside.

Abstract: A disclosed embodiment provides a clothes care device which can improve service life, is not influenced by humidity, and can resolve odor problems. A clothes care device, according to one aspect of the present invention, comprises: an air blower; a flow path through which air, which is made to flow by the air blower, moves; and a deodorizing module for purifying the air which is made to flow by the air blower. The deodorizing module comprises: a ceramic filter provided inside the flow path; and an ultraviolet light emitting unit provided on the outside of the flow path so as to face the ceramic filter.

Abstract: An electronic apparatus capable of controlling the air purification performance of a photocatalytic filter according to an air volume of a blowing fan and a concentration of a specific gas. An electronic apparatus having a deodorizing performance recovery function of a photocatalytic filter. The electronic apparatus includes a blowing fan, a filter apparatus configured to purify air introduced by the blowing fan and a controller configured to adjust a current applied to the filter apparatus, wherein the filter apparatus comprises a light emitting module to which a plurality of light emitting portions configured to output ultraviolet light is mounted, a photocatalytic filter provided to face the light emitting portion and a support frame configured to support the light emitting module and the photocatalytic filter to be apart from each other by a predetermined distance.

Abstract: A three-dimensional semiconductor device includes gate electrodes including pad regions sequentially lowered by a first step portion in a first direction and sequentially lowered by a second step portion in a second direction perpendicular to the first direction, the second step portion being lower than the first step portion, wherein a length of a single pad region among pad regions sequentially lowered by the second step portion in the second direction is less than a length of a remainder of the pad regions in the second direction.

Abstract: A semiconductor device includes a substrate including a recess, the recess being positioned below an isolation region and having a side portion including a plurality of stepped portions, a plurality of gate electrodes spaced apart from each other on the substrate, and stacked in a direction perpendicular to an upper surface of the substrate, a channel structure passing between a first set of the plurality of gate electrodes, and the isolation region passing between a second set of the plurality of gate electrodes, the isolation region extending from the upper surface of the substrate and having an inclined lateral surface.

Abstract: A refrigerator includes a deodorizer installed on an upper surface of a storage compartment. The deodorizer includes a housing in which a flow path is provided, a suction port provided on a lower surface of the housing to suck air, a discharge port provided in the front of the suction port to discharge air, a photocatalytic deodorizing filter disposed at an inner side of the suction port, and a filter light source configured to irradiate light to the photocatalytic deodorizing filter, the flow path is configured to guide air from a rear lower side where the suction port is positioned to a front lower side where the discharge port is positioned, and the filter light source is disposed above the photocatalytic deodorizing filter to face the photocatalytic deodorizing filter in a state of being spaced apart from each other, and positioned above air passing through the flow path.

Abstract: Disclosed herein are a cooking apparatus including a main body including a cooking compartment configured to cook food using microwaves, and a door configured to open or close the cooking compartment, wherein the door includes a door frame in which an opening is formed so that the cooking compartment is visible therethrough, and a shielding plate including a substrate and a multi-shielding layer, with which the substrate is coated to prevent microwaves in the cooking compartment from leaking to an outside, and coupled at the opening. The door of the cooking apparatus allows an inside of the cooking compartment to be better seen from the outside.

Abstract: A semiconductor device includes a substrate including a recess, the recess being positioned below an isolation region and having a side portion including a plurality of stepped portions, a plurality of gate electrodes spaced apart from each other on the substrate, and stacked in a direction perpendicular to an upper surface of the substrate, a channel structure passing between a first set of the plurality of gate electrodes, and the isolation region passing between a second set of the plurality of gate electrodes, the isolation region extending from the upper surface of the substrate and having an inclined lateral surface.

Abstract: A three-dimensional semiconductor device includes gate electrodes including pad regions sequentially lowered by a first step portion in a first direction and sequentially lowered by a second step portion in a second direction perpendicular to the first direction, the second step portion being lower than the first step portion, wherein a length of a single pad region among pad regions sequentially lowered by the second step portion in the second direction is less than a length of a remainder of the pad regions in the second direction.

Abstract: A semiconductor device includes a substrate including a recess, the recess being positioned below an isolation region and having a side portion including a plurality of stepped portions, a plurality of gate electrodes spaced apart from each other on the substrate, and stacked in a direction perpendicular to an upper surface of the substrate, a channel structure passing between a first set of the plurality of gate electrodes, and the isolation region passing between a second set of the plurality of gate electrodes, the isolation region extending from the upper surface of the substrate and having an inclined lateral surface.

Abstract: A three-dimensional semiconductor device includes gate electrodes including pad regions sequentially lowered by a first step portion in a first direction and sequentially lowered by a second step portion in a second direction perpendicular to the first direction, the second step portion being lower than the first step portion, wherein a length of a single pad region among pad regions sequentially lowered by the second step portion in the second direction is less than a length of a remainder of the pad regions in the second direction.

Abstract: A semiconductor device includes a substrate including a recess, the recess being positioned below an isolation region and having a side portion including a plurality of stepped portions, a plurality of gate electrodes spaced apart from each other on the substrate, and stacked in a direction perpendicular to an upper surface of the substrate, a channel structure passing between a first set of the plurality of gate electrodes, and the isolation region passing between a second set of the plurality of gate electrodes, the isolation region extending from the upper surface of the substrate and having an inclined lateral surface.

Abstract: A semiconductor device includes a substrate including a recess, the recess being positioned below an isolation region and having a side portion including a plurality of stepped portions, a plurality of gate electrodes spaced apart from each other on the substrate, and stacked in a direction perpendicular to an upper surface of the substrate, a channel structure passing between a first set of the plurality of gate electrodes, and the isolation region passing between a second set of the plurality of gate electrodes, the isolation region extending from the upper surface of the substrate and having an inclined lateral surface.

Abstract: A three-dimensional semiconductor device includes gate electrodes including pad regions sequentially lowered by a first step portion in a first direction and sequentially lowered by a second step portion in a second direction perpendicular to the first direction, the second step portion being lower than the first step portion, wherein a length of a single pad region among pad regions sequentially lowered by the second step portion in the second direction is less than a length of a remainder of the pad regions in the second direction.