Abstract: A method of operating a pixel array includes activating a global storage signal to store a photosensor charge in a first storage region of each pixel, activating a first reset signal for pixels in a first row to reset a second storage region of first row pixels, sampling the reset second storage region, activating a third reset signal for pixels in a second row to reset a third storage region of second row pixels, sampling the reset third storage region, transferring the photosensor charge from the first storage region of pixels in a first set of columns of the first and second rows of the array respectively to the second and third storage regions, sampling the photosensor charge from the second storage region from first row/first column pixels, and sampling the photosensor charge from the third storage region from second row/first column pixels.

Abstract: A red pixel having a capacitor formed over the photo-conversion region of the pixel. The capacitor can be used by other pixels as a common capacitor. The capacitor is coupled to floating diffusion region shared by a plurality of pixels. The plurality of pixels also share readout circuitry.

Abstract: A pixel cell array architecture having ion implant regions as isolation regions between adjacent active areas of pixels in the array. In one exemplary embodiment, the invention provides an ion-doped p-well region separating n-type photosensitive areas of neighboring pixel cells. The pixel cells have increased fill factor without encountering the disadvantages associated with conventional shallow trench isolation regions.

Abstract: A pixel array includes a first photosensor for generating charge in response to applied light, a second photosensor for generating charge in response to applied light, and a first and second storage transistor having a common first storage gate respectively connected to said first and second photosensors for storing charge from said first and second photosensors in respective first and second storage regions.

Abstract: A method of operating a pixel array includes activating a global storage signal to store a photosensor charge in a first storage region of each pixel, activating a first reset signal for pixels in a first row to reset a second storage region of first row pixels, sampling the reset second storage region, activating a third reset signal for pixels in a second row to reset a third storage region of second row pixels, sampling the reset third storage region, transferring the photosensor charge from the first storage region of pixels in a first set of columns of the first and second rows of the array respectively to the second and third storage regions, sampling the photosensor charge from the second storage region from first row/first column pixels, and sampling the photosensor charge from the third storage region from second row/first column pixels.

Abstract: The present invention, in the various exemplary embodiments, provides a pixel array architecture having multiple pixel cells with shared pixel cell components. The pixel architecture increases the potential fill factor, and in turn, the quantum efficiency of the pixel array. The common pixel components may be shared by a number of pixels in the array, and may include a shared gate for an providing anti-blooming characteristic of the pixels over conventional pixels. Embodiments include the multi-way sharing of a high dynamic range/anti-blooming gate and methods of operation.

Abstract: The present invention, in the various exemplary embodiments, provides a RGB color filter array. The red, green and blue pixel cells are arranged in a honeycomb pattern. The honeycomb layout provides the space to vary the size of pixel cells of an individual color so that, for example, the photosensor of blue pixels can be made larger than that of the red or green pixels. In another aspect of the invention, depicted in the exemplary embodiments, the honeycomb structure can also be implemented with each pixel rowing having a same color of pixel cells which can simplify can conversion in the readout circuits. In another aspect of the invention, the RGB honeycomb pixel array may be implemented using a shared pixel cell architecture.

Abstract: A method and apparatus for achieving high-dynamic range operation with a set of spatially distributed pixel cells is provided. A pixel array with a row of pixels having apertures of varying sizes in a metal mask formed thereon controls the sensitivity of each pixel cell to light. A neutral density filter having varying light transparency values is also provided over the set of pixel cells to control the sensitivity of each pixel cell to light. The pixel cells voltage outputted is combined to obtain high-dynamic range operation.

Abstract: An imager with pixels having dual conversion gain. Each pixel has a dual conversion gain element coupled between two floating diffusion regions. When activated, the dual conversion gain element switches in a storage element to increase the charge storage capacity of the pixel. Pixel reset circuitry is coupled to the second floating diffusion region. In order to reset the first floating diffusion region and the storage element, the dual conversion gain element is activated during the reset operation.

Abstract: Raised structures comprising overlying silicon layers formed by controlled selective epitaxial growth, and methods for forming such raised-structure on a semiconductor substrate are provided. The structures are formed by selectively growing an initial epitaxial layer of monocrystalline silicon on the surface of a semiconductive substrate, and forming a thin film of insulative material over the epitaxial layer. A portion of the insulative layer is removed to expose the top surface of the epitaxial layer, with the insulative material remaining along the sidewalls as spacers to prevent lateral growth. A second epitaxial layer is selectively grown on the exposed surface of the initial epitaxially grown crystal layer, and a thin insulative film is deposited over the second epitaxial layer.

Abstract: A pixel cell array architecture having a dual conversion gain. A dual conversion gain element is coupled between a floating diffusion region and a respective storage capacitor. The dual conversion gain element having a control gate switches in the capacitance of the capacitor to change the conversion gain of the floating diffusion region from a first conversion gain to a second conversion gain. In order to increase the efficient use of space, the dual conversion gain element gate also functions as the bottom plate of the capacitor. In one particular embodiment of the invention, a high dynamic range transistor is used in conjunction with a pixel cell having a capacitor-DCG gate combination; in another embodiment, adjacent pixels share pixel components, including the capacitor-DCG combination.

Abstract: Embodiments of the present invention provide pixel cells with increased storage capacity, which are capable of anti-blooming operations. In an exemplary embodiment a pixel cell has an electronic shutter that transfers charge generated by a photo-conversion device to a storage node before further transferring the charge to the pixel cell's floating diffusion node. Each pixel cell also includes an anti-blooming transistor for directing excess charge out of each respective pixel cell, thus preventing blooming. Additionally, two or more pixel cells of an array may share a floating diffusion node and reset and readout circuitry.

Abstract: A pixel circuit having a shared control line for providing two control signals to the pixel array. One control line is used to provide a control signal to both a high dynamic range circuit and a dual conversion gain circuit to two pixel circuits. The pixel circuits each contain two pixel cells that have separate photo-conversion devices but share readout circuitry.

Abstract: An imaging device having a pixel array in which one plate of a storage capacitor is coupled to a storage node while another plate is formed by an electrode of a photo-conversion region.

Abstract: A pixel and imager device, and method of forming the same, where the pixel has a transfer transistor gate associated with a photoconversion device and is isolated in a substrate by shallow trench isolation. The transfer transistor gate does not overlap the shallow trench isolation region.

Abstract: Undesirable transistor leakage in transistor structures becomes greatly reduced in substrates having a doped implant region formed via pulling back first and second layers of a process stack. A portion of the substrate, which also has first and second layers deposited thereon, defines the process stack. The dopant is selected having the same n- or p-typing as the substrate. Through etching, the first and second layers of the process stack become pulled back from a trench wall of the substrate to form the implant region. Occupation of the implant region by the dopant prevents undesirable transistor leakage because the electrical characteristics of the implant region are so significantly changed, in comparison to central areas of the substrate underneath the first layer, that the threshold voltage of the implant region is raised to be about equivalent to or greater than the substantially uniform threshold voltage in the central area.

Abstract: Raised structures comprising overlying silicon layers formed by controlled selective epitaxial growth, and methods for forming such raised-structure on a semiconductor substrate are provided. The structures are formed by selectively growing an initial epitaxial layer of monocrystalline silicon on the surface of a semiconductive substrate, and forming a thin film of insulative material over the epitaxial layer. A portion of the insulative layer is removed to expose the top surface of the epitaxial layer, with the insulative material remaining along the sidewalls as spacers to prevent lateral growth. A second epitaxial layer is selectively grown on the exposed surface of the initial epitaxially grown crystal layer, and a thin insulative film is deposited over the second epitaxial layer.

Abstract: Raised structures comprising overlying silicon layers formed by controlled selective epitaxial growth, and methods for forming such raised-structure on a semiconductor substrate are provided. The structures are formed by selectively growing an initial epitaxial layer of monocrystalline silicon on the surface of a semiconductive substrate, and forming a thin film of insulative material over the epitaxial layer. A portion of the insulative layer is removed to expose the top surface of the epitaxial layer, with the insulative material remaining along the sidewalls as spacers to prevent lateral growth. A second epitaxial layer is selectively grown on the exposed surface of the initial epitaxially grown crystal layer, and a thin insulative film is deposited over the second epitaxial layer.

Abstract: A pixel array architecture having multiple pixel cells arranged in a split trunk pixel layout and sharing common pixel cell components. The array architecture increases the fill factor, and in turn, the quantum efficiency of the pixel cells. The common pixel cell components may be shared by a number of pixels in the array, and may include several components that are associated with the storage and readout of a signal from the pixel cells.

Abstract: The invention relates to a pixel and imager device, and method of forming the same, where the contacts to the gates of the transistors of the pixel are located over the active region of the pixel, e.g., the channel regions of the transistor gates. The location of the transistor gate contacts makes for a denser circuit for the pixel and allows the photosensor region to be increased in size relative to the pixel size.