Abstract: A catalyst includes a carrier body and a catalytic portion carried by the carrier body. The catalytic portion includes a plurality of distinct layers of catalytic material, which layers may be deposited through atomic layer deposition techniques. The catalyst may have a selectivity for the conversion of alkanes to alkenes of over 50%. The catalyst may be incorporated in a reactor such as a fluidized bed reactor or a single pass reactor.

Abstract: A heterojunction photovoltaic cell. The cell includes a nanoporous substrate, a transparent conducting oxide disposed on the nanoporous substrate, a nanolaminate film deposited on the nanoporous substrate surface, a sensitizer dye disposed on a wide band gap semiconducting oxide and a redox shuttle positioned within the layer structure.

Abstract: A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.

Abstract: The invention provides a method for depositing catalytic clusters on a surface, the method comprising confining the surface to a controlled atmosphere; contacting the surface with catalyst containing vapor for a first period of time; removing the vapor from the controlled atmosphere; and contacting the surface with a reducing agent for a second period of time so as to produce catalyst-containing nucleation sites.

Abstract: An improved device and process for atomic layer deposition (ALD) is provided. A more rapid deposition of layers is accomplished by a continuous flow of reactant moieties. The first moiety, carried by an inert carrier gas, is deposited as a monolayer. The flow is then switched to the second moiety, also carried by an inert gas, which is deposited as a monolayer and which reacts with the first moiety thereby forming a product moiety monolayer. The process is repeated with continual switching of flow between the two different reactant moieties. This allows for the deposition of many layers of the product moiety Any unreacted moiety molecules and unadsorbed product moiety molecules are swept out by the carrier gas. The capability exists to use more than three reactant moieties and thus form complex materials.