Abstract: The present invention provides an improved method of forming continuous filament mat (CFM) at greater through-put while maintaining or improving product quality by use of a synchronized draw process. The synchronized draw process provides CFM having improved weight variation, structure and tensile strength is capable of operating at increased mat line speed. CFM produced may have controlled mat density, MD density variation, CM density variation, MD tensile strength and CM tensile strength by controlling the period, frequency and interval of the deposited fiber strands. Using the synchronization technology of the present invention it is possible to control the tensile strength ratio (MD/CD) to meet a specific customer need by adjusting the LFR, frequency, period, and line speed. The method of the present invention provides for increasing the throughput of specialized and costly CFM manufacturing equipment without substantial expenditure.

Abstract: A method of forming a single sided conductor and a semiconductor device having the same is provided. The method includes providing a substrate having an opening. The opening exposes a sidewall and an opening base surface. A tilted mask layer is formed in the opening. The tilted mask layer exposes the sidewall and a portion of the opening base surface. A dielectric layer is formed on the exposed sidewall and the exposed opening base surface. Then, the tilted mask layer is removed, and a conductive layer is formed over the substrate.