Abstract: A system and method for maximizing bandwidth in an uplink for a 5G communication system is disclosed. Multiple end devices generate image streams. A gateway is coupled to the end devices. The gateway includes a gateway monitor agent collecting utilization rate data of the gateway and an image inspector collecting inspection data from the received image streams. An edge server is coupled to the gateway. The edge server includes an edge server monitor agent collecting utilization rate data of the edge server. An analytics manager is coupled to the gateway and the edge server. The analytics manager is configured to determine an allocation strategy based on the collected utilization rate data from the gateway and the edge server.

Abstract: A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The antenna layer is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the antenna layer is contacted with an external energy source, and the induced charge is stored in the floating gate.

Abstract: An electronic package is disclosed. An antenna board is stacked on a circuit board. A frame is formed on the circuit board. A supporter disposed between the antenna board and the circuit board is secured in the frame. In a packaging process, the frame ensures that the antenna board and the circuit board are separated at a distance that complies with a requirement, and that the antenna function of the antenna board can function normally.

Abstract: A method includes applying a first voltage to a source of a first transistor of a detector unit of a semiconductor detector in a test wafer and applying a second voltage to a gate of the first transistor and a drain of a second transistor of the detector unit. The first transistor is coupled to the second transistor in series, and the first voltage is higher than the second voltage. A pre-exposure reading operation is performed to the detector unit. Light of an exposure apparatus is illuminated to a gate of the second transistor after applying the first and second voltages. A post-exposure reading operation is performed to the detector unit. Data of the pre-exposure reading operation is compared with the post-exposure reading operation. An intensity of the light is adjusted based on the compared data of the pre-exposure reading operation and the post-exposure reading operation.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.

Abstract: The present disclosure relates to a semiconductor structure. The semiconductor structure includes a lower electrode over a substrate, a first capacitor dielectric layer over the lower electrode, an intermediate electrode over the first capacitor dielectric layer, and a second capacitor dielectric layer is over the intermediate electrode. An upper electrode is over the second capacitor dielectric layer. The upper electrode is completely confined over the intermediate electrode. A first protection layer is completely confined over the intermediate electrode. The first protection layer covers opposing sidewalls of the upper electrode and upper surfaces of the intermediate electrode and the upper electrode.

Abstract: A method for increasing the bandwidth of an electroabsorption modulator (EAM) includes the following steps. First, a plurality of p-i-n active waveguides for the EAM are defined on a p-i-n optical waveguide forming an EAM having a shorter p-i-n active waveguide length. Then, the bandwidth of the EAM can be increased. Second, the high-impedance transmission lines are used in series to connect the EAM sections to reduce the microwave reflection and then increase the device bandwidth. Finally, the impedance-controlled transmission lines for the signal input and output can not only reduce the parasitic effects resulting from packaging, but also reduce the microwave reflection resulting from the impedance mismatch at the device input and load.

Abstract: Structures and methods for reducing process charging damages are disclosed. In one example, a silicon-on-insulator (SOI) structure is disclosed. The SOI structure includes: a substrate, a polysilicon region and an etch stop layer. The substrate includes: a handle layer, an insulation layer arranged over the handle layer, and a buried layer arranged over the insulation layer. The polysilicon region extends downward from an upper surface of the buried layer and terminates in the handle layer. The etch stop layer is located on the substrate. The etch stop layer is in contact with both the substrate and the polysilicon region.

Abstract: This application relates generally to a computer implemented method comprising: receiving a medical record data from a patient, wherein said record comprising a static attribute and a time dependent progression attribute; processing the time dependent progression attributes of medical record data using a trained neural network to into time-series representation, and converting the static attributes into static variables; combining the time-series representation and static variables to multiple vectors; providing a prognosis outcome by a trained classifier using said multiple vectors; wherein the neural network is trained by steps of (a) assembling a training data set comprising a retrospective collection of patients' medical record data wherein said record data comprising collected number of static attributes, time dependent progression attributes and patients' mortality and relapse outcomes; (b) processing the time dependent progression attributes of the training data set using a neural network to convert th

Abstract: An electronic package and a method for fabricating the same are provided. A resist layer and a support are formed on a first substrate having a first antenna installation area. A second substrate having a second antenna installation area is laminated on the resist layer and the support. The resist layer is then removed. The support keeps the first substrate apart from the second substrate at a distance to ensure that the antenna transmission between the first antenna installation area and the second antenna installation area can function normally.

Abstract: The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout, which has a plurality of main features and a plurality of space blocks. The IC method also includes calculating an optimized block dummy density ratio r0 to optimize a uniformity of pattern density (UPD), determining a target block dummy density ratio R, determining size, pitch and type of a non-printable dummy feature, generating a pattern for dummy features and adding the dummy features in the IC design layout.

Abstract: An electronic package is disclosed. An antenna board is stacked on a circuit board. A frame is formed on the circuit board. A supporter disposed between the antenna board and the circuit board is secured in the frame. In a packaging process, the frame ensures that the antenna board and the circuit board are separated at a distance that complies with a requirement, and that the antenna function of the antenna board can function normally.

Abstract: A motor control system includes a motor and a processor, and the processor is electrically connected to the motor. The processor performs the following actions: calculating the d-axis magnetic flux and the q-axis magnetic flux in a synchronous rotating reference frame according to the information fed back by the motor; multiplying the d-axis magnetic flux and the q-axis magnetic flux by a d-axis current feedback and a q-axis current feedback to be a d-axis flux-current product and a q-axis flux-current product respectively; subtracting the q-axis flux-current product from the d-axis flux-current product to get a flux-current product error; sending the flux-current product error to a proportional-integral controller to generate a present compensation current-angle command; adding the present compensation current-angle command and a previous current-angle command to obtain the present current-angle command; sending the present current-angle command to a d-q axis current regulator for processing.

Abstract: Structures and methods for reducing process charging damages are disclosed. In one example, a silicon-on-insulator (SOI) structure is disclosed. The SOI structure includes: a substrate, a polysilicon region and an etch stop layer. The substrate includes: a handle layer, an insulation layer arranged over the handle layer, and a buried layer arranged over the insulation layer. The polysilicon region extends downward from an upper surface of the buried layer and terminates in the handle layer. The etch stop layer is located on the substrate. The etch stop layer is in contact with both the substrate and the polysilicon region.

Abstract: A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an antenna layer. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The antenna layer is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the antenna layer is contacted with an external energy source, and the induced charge is stored in the floating gate.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank.

Abstract: A motor control system includes a motor and a processor, and the processor is electrically connected to the motor. The processor performs the following actions: calculating the d-axis magnetic flux and the q-axis magnetic flux in a synchronous rotating reference frame according to the information fed back by the motor; multiplying the d-axis magnetic flux and the q-axis magnetic flux by a d-axis current feedback and a q-axis current feedback to be a d-axis flux-current product and a q-axis flux-current product respectively; subtracting the q-axis flux-current product from the d-axis flux-current product to get a flux-current product error; sending the flux-current product error to a proportional-integral controller to generate a present compensation current-angle command; adding the present compensation current-angle command and a previous current-angle command to obtain the present current-angle command; sending the present current-angle command to a d-q axis current regulator for processing.

Abstract: This application relates generally to automated systems and methods for classifying subtypes of leukemia cells and other applications therefrom.