Patents by Inventor Jeng-Shyan Lin

Jeng-Shyan Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220254828
    Abstract: The present disclosure relates to a semiconductor structure. The semiconductor structure includes a dielectric layer having a first dielectric surface and a second dielectric surface opposite to the first dielectric surface. The dielectric layer defines a recess in the first dielectric surface, and the recess includes a sidewall of the dielectric layer. A first conductive layer contacts a bottom surface of the dielectric layer. The sidewall of the dielectric layer is directly over the first conductive layer. A second conductive layer contacts the first conductive layer and the dielectric layer. The second conductive layer vertically extends from the first conductive layer to above the dielectric layer. A third conductive layer contacts the second conductive layer. The third conductive layer is laterally separated from a sidewall of the second conductive layer that faces the third conductive layer by a non-zero distance.
    Type: Application
    Filed: April 26, 2022
    Publication date: August 11, 2022
    Inventors: Kai-Chun Hsu, Ching-Chun Wang, Dun-Nian Yaung, Jeng-Shyan Lin, Shyh-Fann Ting
  • Patent number: 11342374
    Abstract: An image-sensor device is provided. The image-sensor device includes a semiconductor substrate and a radiation-sensing region in the semiconductor substrate. The image-sensor device also includes a doped isolation region in the semiconductor substrate and a dielectric film extending into the doped isolation region from a surface of the semiconductor substrate. A portion of the doped isolation region is between the dielectric film and the radiation-sensing region.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: May 24, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung
  • Patent number: 11322540
    Abstract: The present disclosure relates to an integrated circuit. The integrated circuit includes a plurality of interconnects within a dielectric structure over a substrate. A passivation structure is arranged over the dielectric structure. The passivation structure has sidewalls connected to one or more upper surfaces of the passivation structure. A bond pad is arranged directly between the sidewalls of the passivation structure. An upper passivation layer is disposed over the passivation structure and the bond pad. The upper passivation layer extends from over an upper surface of the bond pad to within a recess in the upper surface of the bond pad.
    Type: Grant
    Filed: October 14, 2020
    Date of Patent: May 3, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Chun Hsu, Ching-Chun Wang, Dun-Nian Yaung, Jeng-Shyan Lin, Shyh-Fann Ting
  • Patent number: 11244925
    Abstract: The present disclosure relates to a method of forming a semiconductor device structure. The method may be performed by forming a gate structure along a first side of a semiconductor substrate. The semiconductor substrate is thinned. Thinning the semiconductor substrate causes defects to form along a second side of the semiconductor substrate opposing the first side of the semiconductor substrate. Dopants are implanted into the second side of the semiconductor substrate after thinning the semiconductor substrate. The semiconductor substrate is annealed to form a doped layer after implanting the dopants. The doped layer is formed along the second side of the semiconductor substrate.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: February 8, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Jeng-Shyan Lin, Hsun-Ying Huang
  • Patent number: 11222915
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a plurality of interconnect layers within a dielectric structure over an upper surface of a substrate. A passivation structure is formed over the dielectric structure. The passivation structure has sidewalls and a horizontally extending surface defining has a recess within an upper surface of the passivation structure. A bond pad is formed having a lower surface overlying the horizontally extending surface and one or more protrusions extending outward from the lower surface. The one or more protrusions extend through one or more openings within the horizontally extending surface to contact a first one of the plurality of interconnect layers. An upper passivation layer is deposited on sidewalls and an upper surface of the bond pad and on sidewalls and the upper surface of the passivation structure.
    Type: Grant
    Filed: July 20, 2018
    Date of Patent: January 11, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Chun Hsu, Ching-Chun Wang, Dun-Nian Yaung, Jeng-Shyan Lin, Shyh-Fann Ting
  • Patent number: 11152414
    Abstract: An image sensor includes a substrate having a pixel region and a periphery region. The image sensor further includes a first isolation structure formed in the pixel region; the first isolation structure including a first trench having a first depth. The image sensor further includes a second isolation structure formed in the periphery region; the second isolation structure including a second trench having a second depth greater than the first depth. The pixel region includes only NMOS devices and the periphery region includes both NMOS and PMOS devices.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: October 19, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Chun-Chieh Chuang, Volume Chien
  • Publication number: 20210313376
    Abstract: The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a first plurality of interconnects within a first dielectric structure on a first substrate, and a second plurality of interconnects within a second dielectric structure on a second substrate. A bonding structure is arranged between the first dielectric structure and the second substrate. An inter-tier interconnect structure extends between the first plurality of interconnects and the second plurality of interconnects and through the second substrate. The inter-tier interconnect structure includes a first region having substantially vertical sidewalls extending through the second substrate and a second region surrounded by the bonding structure. The second region contacts a bottom of the first region and has tapered sidewalls.
    Type: Application
    Filed: June 16, 2021
    Publication date: October 7, 2021
    Inventors: Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Hsun-Ying Huang, Wei-Chih Weng, Yu-Yang Shen
  • Publication number: 20210272989
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a photodetector disposed in a semiconductor substrate. An interlayer dielectric (ILD) structure is disposed on a first side of the semiconductor substrate. A storage node is disposed in the semiconductor substrate and spaced from the photodetector, where the storage node is spaced from the first side by a first distance. A first isolation structure is disposed in the semiconductor substrate and between the photodetector and the storage node, where the first isolation structure extends into the semiconductor substrate from a second side of the semiconductor substrate that is opposite the first side, and where the first isolation structure is spaced from the first side by a second distance that is less than the first distance.
    Type: Application
    Filed: May 19, 2021
    Publication date: September 2, 2021
    Inventors: Jeng-Shyan Lin, Shu-Ting Tsai, Tzu-Hsuan Hsu
  • Publication number: 20210242153
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a first isolation structure on a first surface of a substrate. A second isolation structure is formed into the first surface of the substrate. Sidewalls of the first isolation structure are disposed laterally between inner sidewalls of the second isolation structure. A bond pad is formed in the substrate such that the second isolation structure continuously laterally wraps around the bond pad.
    Type: Application
    Filed: April 21, 2021
    Publication date: August 5, 2021
    Inventors: Sin-Yao Huang, Jeng-Shyan Lin, Shih-Pei Chou, Tzu-Hsuan Hsu
  • Publication number: 20210233813
    Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.
    Type: Application
    Filed: April 12, 2021
    Publication date: July 29, 2021
    Inventors: Shu-Ting Tsai, Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Chih-Hui Huang, Sheng-Chau Chen, Shih Pei Chou, Chia-Chieh Lin
  • Patent number: 11043522
    Abstract: The present disclosure, in some embodiments, relates to a multi-dimensional integrated chip structure. The structure includes a first interconnect layer within a first dielectric structure on a first substrate, and a second interconnect layer within a second dielectric structure on a second substrate. A bonding structure is between the first dielectric structure and the second substrate. An inter-tier interconnect structure extends through the second substrate and between a top of the first interconnect layer and a bottom of the second interconnect layer. The inter-tier interconnect structure includes a first region having substantially vertical sidewalls extending through the second substrate and a second region below the first region and having tapered sidewalls surrounded by the bonding structure.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: June 22, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Hsun-Ying Huang, Wei-Chih Weng, Yu-Yang Shen
  • Patent number: 11018177
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a photodetector disposed in a semiconductor substrate. An interlayer dielectric (ILD) structure is disposed on a first side of the semiconductor substrate. A storage node is disposed in the semiconductor substrate and spaced from the photodetector, where the storage node is spaced from the first side by a first distance. A first isolation structure is disposed in the semiconductor substrate and between the photodetector and the storage node, where the first isolation structure extends into the semiconductor substrate from a second side of the semiconductor substrate that is opposite the first side, and where the first isolation structure is spaced from the first side by a second distance that is less than the first distance.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: May 25, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jeng-Shyan Lin, Shu-Ting Tsai, Tzu-Hsuan Hsu
  • Patent number: 11011567
    Abstract: An image sensor structure that includes a first semiconductor substrate having a plurality of imaging sensors; a first interconnect structure formed on the first semiconductor substrate; a second semiconductor substrate having a logic circuit; a second interconnect structure formed on the second semiconductor substrate, wherein the first and the second semiconductor substrates are bonded together in a configuration that the first and second interconnect structures are sandwiched between the first and second semiconductor substrates; and a backside deep contact (BDCT) feature extended from the first interconnect structure to the second interconnect structure, thereby electrically coupling the logic circuit to the image sensors.
    Type: Grant
    Filed: November 8, 2019
    Date of Patent: May 18, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Chun-Chieh Chuang, Feng-Chi Hung, Shuang-Ji Tsai, Jeng-Shyan Lin, Shu-Ting Tsai, Wen-I Hsu
  • Patent number: 10991667
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device structure including a bond pad isolation structure. A semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. A bond pad extends through the semiconductor substrate. The bond pad isolation structure is disposed within the semiconductor substrate. The bond pad isolation structure extends from the front-side surface to the back-side surface of the semiconductor substrate and continuously extends around the bond pad.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: April 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sin-Yao Huang, Jeng-Shyan Lin, Shih-Pei Chou, Tzu-Hsuan Hsu
  • Patent number: 10991752
    Abstract: A method includes bonding a Backside Illumination (BSI) image sensor chip to a device chip, forming a first via in the BSI image sensor chip to connect to a first integrated circuit device in the BSI image sensor chip, forming a second via penetrating through the BSI image sensor chip to connect to a second integrated circuit device in the device chip, and forming a metal pad to connect the first via to the second via.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: April 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jeng-Shyan Lin, Feng-Chi Hung, Dun-Nian Yaung, Jen-Cheng Liu, Szu-Ying Chen, Wen-De Wang, Tzu-Hsuan Hsu
  • Patent number: 10978345
    Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.
    Type: Grant
    Filed: October 4, 2018
    Date of Patent: April 13, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu-Ting Tsai, Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Chih-Hui Huang, Sheng-Chau Chen, Shih Pei Chou, Chia-Chieh Lin
  • Publication number: 20210043593
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device structure including a bond pad isolation structure. A semiconductor substrate has a back-side surface and a front-side surface opposite the back-side surface. A bond pad extends through the semiconductor substrate. The bond pad isolation structure is disposed within the semiconductor substrate. The bond pad isolation structure extends from the front-side surface to the back-side surface of the semiconductor substrate and continuously extends around the bond pad.
    Type: Application
    Filed: August 6, 2019
    Publication date: February 11, 2021
    Inventors: Sin-Yao Huang, Jeng-Shyan Lin, Shih-Pei Chou, Tzu-Hsuan Hsu
  • Publication number: 20210028219
    Abstract: The present disclosure relates to an integrated circuit. The integrated circuit includes a plurality of interconnects within a dielectric structure over a substrate. A passivation structure is arranged over the dielectric structure. The passivation structure has sidewalls connected to one or more upper surfaces of the passivation structure. A bond pad is arranged directly between the sidewalls of the passivation structure. An upper passivation layer is disposed over the passivation structure and the bond pad. The upper passivation layer extends from over an upper surface of the bond pad to within a recess in the upper surface of the bond pad.
    Type: Application
    Filed: October 14, 2020
    Publication date: January 28, 2021
    Inventors: Kai-Chun Hsu, Ching-Chun Wang, Dun-Nian Yaung, Jeng-Shyan Lin, Shyh-Fann Ting
  • Patent number: 10879297
    Abstract: An image sensor device includes a pixel array, a control circuit, an interconnect structure, and a conductive layer. The pixel array is disposed on a device substrate within a pixel region. The control circuit disposed on the device substrate within a circuit region, the control circuit being adjacent and electrically coupled to the pixel array. The interconnect structure overlies and electrically connects the control circuit and the pixel array. The interconnect structure includes interconnect metal layers separated from each other by inter-metal dielectric layers and vias that electrically connect between metal traces of the interconnect layers. The conductive layer disposed over the interconnect structure and electrically connected to the interconnect structure by an upper via disposed through an upper inter-metal dielectric layer therebetween. The conductive layer extends laterally within outermost edges of the interconnect structure and within the pixel region and the circuit region.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-De Wang, Dun-Nian Yaung, Jen-Cheng Liu, Chun-Chieh Chuang, Jeng-Shyan Lin
  • Publication number: 20200402954
    Abstract: The present disclosure relates to a method of forming a semiconductor device structure. The method may be performed by forming a gate structure along a first side of a semiconductor substrate. The semiconductor substrate is thinned. Thinning the semiconductor substrate causes defects to form along a second side of the semiconductor substrate opposing the first side of the semiconductor substrate. Dopants are implanted into the second side of the semiconductor substrate after thinning the semiconductor substrate. The semiconductor substrate is annealed to form a doped layer after implanting the dopants. The doped layer is formed along the second side of the semiconductor substrate.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 24, 2020
    Inventors: Min-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Jeng-Shyan Lin, Hsun-Ying Huang