Abstract: An article includes a body having a plasma-sprayed ceramic coating on a surface thereof. The body can be formed of at one least one of the following materials: Al, Al2O3, AlN, Y2O3, YSZ, or SiC. The plasma-sprayed ceramic coating can include at least one of Y2O3, Y4Al2O9, Y3Al5O12 or a solid-solution of Y2O3 mixed with at least one of ZrO2, Al2O3, HfO2, Er2O3, Nd2O3, Nb2O5, CeO2, Sm2O3 or Yb2O3. The plasma-sprayed ceramic coating can further include splats.

Abstract: An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of MxOyFz, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide film is selected from a group consisting of an Er—Y composition, an Er—Al—Y composition, an Er—Y—Zr composition, and an Er—Al composition.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide is selected from a group consisting of YF3, Er4Al2O9, ErAlO3, and a ceramic compound comprising Y4Al2O9 and a solid-solution of Y2O3—ZrO2.

Abstract: An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 ?m, wherein the plasma resistant rare earth oxide film consists essentially of 40 mol % to less than 100 mol % of Y2O3, over 0 mol % to 60 mol % of ZrO2, and 0 mol % to 9 mol % of Al2O3.

Abstract: A substrate support assembly includes a ground shield and a heater that is surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes an electrically conductive layer, a first protective layer on the upper surface of the plate. In another embodiment, the ground shield is composed of an electrically conductive body and a first protective layer on the upper surface of the plate.

Abstract: Disclosed are rare earth metal containing silicate coatings, coated articles (e.g., heaters and susceptors) or bodies of articles and methods of coating such articles with a rare earth metal containing silicate coating.

Abstract: Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.

Abstract: Disclosed herein is a plasma-resistant chamber component and a method for manufacturing the same. A plasma-resistant chamber component of a semiconductor processing chamber that generates a plasma environment includes a ceramic article having multiple polished apertures. A roughness of the multiple polished apertures is less than 32 ?in.

Abstract: An additive manufacturing system includes a platen to support an object to be fabricated, a dispenser assembly positioned above the platen, and an energy source configured to selectively fuse a layer of powder. The dispenser assembly includes a first dispenser, a second dispenser, and a drive system. The first dispenser delivers a first powder in a first linear region that extends along a first axis, and the second dispenser delivers a second powder in a second linear region that extends parallel to the first linear region and is offset from the first linear region along a second axis perpendicular to the first axis. The drive system a drive system moves the support with the first dispenser and second dispenser together along the second axis.

Abstract: A component for a processing chamber includes a ceramic body having at least one surface with a first average surface roughness. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a plasma resistant rare earth oxide film having a substantially uniform thickness of less than 300 ?m over the at least one surface and having a second average surface roughness that is less than the first average surface roughness.

Abstract: Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed.

Abstract: Disclosed are rare earth metal containing silicate coatings, coated articles (e.g., heaters and susceptors) or bodies of articles and methods of coating such articles with a rare earth metal containing silicate coating.

Abstract: A method comprises depositing a first layer of aluminum oxide onto a surface of a chamber component via atomic layer deposition (ALD). The method further comprises depositing a second layer of yttrium oxide onto a surface of the chamber component via ALD, depositing a third layer of zirconium oxide onto the surface of the chamber component via ALD, and forming a corrosion and erosion resistant coating comprising a YZrxOy solid state phase of the second layer and the third layer, wherein x and y have values that are based on a number of repetitions of the atomic layer deposition process that are used to deposit the second layer and a number of repetitions of the atomic layer deposition process that are used to deposit the third layer.

Abstract: Methods of forming nanoceramic materials and components. The methods may include performing atomic layer deposition to form a plurality of nanoparticles, including forming a thin film coating over core particles, or sintering the nanoparticles in a mold. The nanoparticles can include a first material selected from a rare earth metal-containing oxide, a rare earth metal-containing fluoride, a rare earth metal-containing oxyfluoride or combinations thereof.

Abstract: A method of forming a fluorinated metal film is provided. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.

Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Abstract: Disclosed herein are systems and methods for polishing internal surfaces of apertures in semiconductor processing chamber components. A method includes providing a ceramic article having at least one aperture, the ceramic article being a component for a semiconductor processing chamber. The method further includes polishing the at least one aperture based on flowing an abrasive media through the at least one aperture of the ceramic article, the abrasive media including a polymer base and a plurality of abrasive particles.

Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of an article using an atomic layer deposition (ALD) process. The plasma resistant coating has a first layer and a second layer including a solid solution of Y2O3-ZrO2 and uniformly covers features, such as those having an aspect ratio of length to width of about 3:1 to about 300:1.

Abstract: A multi-component coating composition for a surface of a semiconductor process chamber component comprising at least one first film layer of a yttrium oxide or a yttrium fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process and at least one second film layer of an additional oxide or an additional fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process, wherein the multi-component coating composition is selected from the group consisting of YOxFy, YAlxOy, YZrxOy and YZrxAlyOz.