Abstract: The invention relates to an X-ray detector component comprising an X-ray detector chip made from a silicon substrate and comprising charge collecting electrodes. The X-ray detector chip is suitable for providing an X-ray-dependent current at the charge collecting electrodes. The X-ray detector component further comprises a CMOS read-out circuit chip comprising connection electrodes. The X-ray detector chip and the CMOS read-out circuit chip are mechanically and electrically connected in such a manner that the charge collecting electrodes and the connection electrodes are electrically connected. The invention further relates to an X-ray detection module, an imaging device and a method for manufacturing an X-ray detector component.

Abstract: A photonic device includes a semiconductor substrate and a pressure-sensitive membrane. The pressure-sensitive membrane is arranged in or on the substrate. A photonic structure is at least partly coupled to the membrane and arranged to change an optical property depending on a deformation to be induced by a pressure applied to the membrane.

Abstract: A display includes a display substrate having an active display area including a plurality of first display subpixels. A transceiver circuit is arranged to drive the display in a first mode of operation or in a second mode of operation. The first display subpixels include micro light-emitting diodes and/or resonant-cavity light emitting devices. In the first mode of operation, the transceiver circuit provides a forward bias to the first display subpixels, such that the first display subpixels are operable to emit light. In the second mode of operation, the transceiver circuit provides a reverse bias to the first display subpixels, such that the first display subpixels are operable to detect light.

Abstract: An integrated detector device for direct detection of X-ray photons includes a CMOS body including a substrate portion and a dielectric portion arranged on a main surface of the substrate portion, an integrated circuit in the CMOS body having implants at or above the main surface for forming charge collectors, and a metal structure in the dielectric portion that extends from the charge collectors to a contact surface of the dielectric portion facing away from the substrate portion. The device further includes an absorber portion arranged on the contact surface of the dielectric portion, the absorber portion including an absorber element that is in electrical contact with the metal structure, and an electrode structure that is in direct contact with the absorber element forming an electrical contact. The absorber element is configured to absorb X-ray photons and generate electrical charges based on the absorbed X-ray photons.

Abstract: An integrated optical transducer for detecting dynamic pressure changes comprises a micro-electro-mechanical system, MEMS, die having a MEMS diaphragm with a first side exposed to the dynamic pressure changes and a second side, and an application-specific integrated circuit, ASIC, die having an optical interferometer assembly. The interferometer assembly comprises a beam splitting element for receiving a source beam from a light source and for splitting the source beam into a probe beam in a first beam path and a reference beam in a second beam path, a beam combining element for combining the probe beam with the reference beam to a superposition beam, and a detector configured to generate an electronic interference signal depending on the superposition beam. The MEMS die is arranged with respect to the ASIC die such that a gap is formed between the second side of the diaphragm and the ASIC die, with the gap defining a cavity and having a gap height.

Abstract: An electronic sensing device includes a display having a display surface and a plurality of micro light emitters configured to emit light for forming a display image on the display surface. A plurality of micro photodetectors is configured to detect light conditions at the display surface. A transceiver circuit is configured to drive the micro light emitters to emit light, drive the micro photodetectors to detect light and generate photo signals based on the detected light, coordinate the driving of the micro light emitters and of the micro photodetectors, and process the photo signals according to at least one of a list of sensing modes. The plurality of micro light emitters and the plurality of micro photodetectors are arranged on a surface of a display substrate.

Abstract: A display includes a display substrate with a surface, on which pixels are formed by arranging a plurality of light emitting display subpixels and a plurality of light capturing subpixels on the surface of the display substrate. Each light emitting display subpixel comprises a micro-LED and each light capturing subpixels comprises a micro photodiode. The pixels are distributed across an active display area of the display substrate. At least a portion of the pixels include a light capturing subpixel and at least one light emitting display subpixel.

Abstract: A display includes a display substrate having an active display area including a plurality of first display subpixels. A transceiver circuit is arranged to drive the display in a first mode of operation or in a second mode of operation. The first display subpixels include micro light-emitting diodes and/or resonant-cavity light emitting devices. In the first mode of operation, the transceiver circuit provides a forward bias to the first display subpixels, such that the first display subpixels are operable to emit light. In the second mode of operation, the transceiver circuit provides a reverse bias to the first display subpixels, such that the first display subpixels are operable to detect light.

Abstract: An apparatus for sound detection, sound localization and beam forming comprises a display and a plurality of microphone stacks, wherein the display surrounds each microphone stack in lateral directions. The apparatus further comprises a plurality of elastic connectors, wherein each elastic connector surrounds one respective microphone stack in lateral direction and mechanically connects the respective microphone stack with the display. Each microphone stack further comprises a microelectromechanical transducer array, the transducer array comprising a plurality of membranes, in particular nano-membranes, and corresponding integrated back-volumes, the back-volumes being arranged under the membranes. An optical reading device is configured to separately detect the displacement of each membrane.

Abstract: An imaging system comprises a light emitter, a detector array and a synchronization circuit. The light emitter is arranged to emit light of modulated intensity, wherein the intensity is modulated monotonously during the acquisition of a frame. The synchronization circuit is arranged to synchronize the acquisition with the light emitter.

Abstract: In at least one embodiment an imaging system comprises a light emitter, a detector array and a synchronization circuit. The detector array comprises pixels, which have a built-in modulation function. The synchronization circuit is operable to synchronize acquisition performed by detector array with emission by means of the light source.

Abstract: A semiconductor device comprises a substrate body with a surface, a conductor comprising a conductor material covering at least part of the surface, and a dielectric that is arranged on a part of the surface that is not covered by the conductor. Therein, the conductor is in contact with the substrate body, the conductor and the dielectric form a layer, and a bonding surface of the layer has surface topographies of less than 10 nm, with the bonding surface facing away from the substrate body. Moreover, the semiconductor device is free of a diffusion barrier.

Abstract: The invention relates to an X-ray detector component comprising an X-ray detector chip made from a silicon substrate and comprising charge collecting electrodes. The X-ray detector chip is suitable for providing an X-ray-dependent current at the charge collecting electrodes. The X-ray detector component further comprises a CMOS read-out circuit chip comprising connection electrodes. The X-ray detector chip and the CMOS read-out circuit chip are mechanically and electrically connected in such a manner that the charge collecting electrodes and the connection electrodes are electrically connected. The invention further relates to an X-ray detection module, an imaging device and a method for manufacturing an X-ray detector component.

Abstract: The package comprises a carrier, an electronic device arranged on the carrier, a shield arranged on the electronic device on a side facing away from the carrier, and an absorber film comprising nanomaterial applied on or above the shield.

Abstract: The semiconductor device comprises a substrate of semiconductor material having a main surface, an integrated circuit in the substrate, a photodetector element or array of photodetector elements arranged at or above the main surface, and at least one nanomaterial film arranged above the main surface. At least part of the nanomaterial film has a scintillating property. The method of production includes the use of a solvent to apply the nanomaterial film, in particular by inject printing, by silk-screen printing, by spin coating or by spray coating.

Abstract: An integrated optical transducer for detecting dynamic pressure changes comprises a micro-electro-mechanical system, MEMS, die having a MEMS diaphragm with a first side exposed to the dynamic pressure changes and a second side, and an application-specific integrated circuit, ASIC, die having an optical interferometer assembly. The interferometer assembly comprises a beam splitting element for receiving a source beam from a light source and for splitting the source beam into a probe beam in a first beam path and a reference beam in a second beam path, a beam combining element for combining the probe beam with the reference beam to a superposition beam, and a detector configured to generate an electronic interference signal depending on the superposition beam. The MEMS die is arranged with respect to the ASIC die such that a gap is formed between the second side of the diaphragm and the ASIC die, with the gap defining a cavity and having a gap height.

Abstract: The assembly comprises a semiconductor device with an active-pixel array, a readout circuit chip or plurality of readout circuit chips mounted outside the active-pixel array, the readout circuit chip or plurality of readout circuit chips being configured to read out voltages or currents provided by the active-pixel array, and electric connections between the active-pixel array and the readout circuit chip or plurality of readout circuit chips.

Abstract: A filter assembly includes comprises an incident medium, a spacer, at least one dielectric filter and an exit medium. The spacer is arranged between the incident medium and the at least one dielectric filter such that the incident medium and the at least one dielectric filter are spaced apart by a working distance and thereby enclose a medium of lower index of refraction than the incident medium. The at least one dielectric filter is arranged on the exit medium.

Abstract: The photodiode device comprises a substrate (1) of semiconductor material with a main surface (10), a plurality of doped wells (3) of a first type of conductivity, which are spaced apart at the main surface (10), and a guard ring (7) comprising a doped region of a second type of conductivity, which is opposite to the first type of conductivity. The guard ring (7) surrounds an area of the main surface (10) including the plurality of doped wells (3) without dividing this area. Conductor tracks (4) are electrically connected with the doped wells (3), which are thus interconnected, and further conductor tracks (5) are electrically connected with a region of the second type of conductivity. A doped surface region (2) of the second type of conductivity is present at the main surface (10) and covers the entire area between the guard ring (7) and the doped wells (3).

Abstract: A photonic device includes a semiconductor substrate and a pressure-sensitive membrane. The pressure-sensitive membrane is arranged in or on the substrate. A photonic structure is at least partly coupled to the membrane and arranged to change an optical property depending on a deformation to be induced by a pressure applied to the membrane.