Abstract: A method of forming a device for propagating light includes providing a substrate having a semiconductor material; placing an insulating layer on the substrate; providing a recess reaching through the insulating layer and into the substrate; filling the recess at least partially with a filler material; and arranging a waveguide in or on the filler material.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.

Abstract: A method of forming a device for propagating light includes providing a substrate having a semiconductor material; placing an insulating layer on the substrate; providing a recess reaching through the insulating layer and into the substrate; filling the recess at least partially with a filler material; and arranging a waveguide in or on the filler material.

Abstract: The present invention relates to a semiconductor device (1) for use in at least an optical application comprising: at least an optically passive aspect (2) that is operable in substantially an optically passive mode, and at least an optically active material (3) comprising at least a material that is operable in substantially an optically active mode, wherein: the optically passive aspect (2) further comprises at least a crystalline seed layer (4), the optically active material (3) being epitaxially grown in at least a predefined structure (5) provided in the optically passive aspect (2) that extends to at least an upper surface (4?) of the crystalline seed layer (4), and the optically passive aspect (2) is structured to comprise at least a passive photonic structure (6), wherein the crystalline seed layer (4) comprises a crystalline wafer and wherein the optically active material (3) comprises at least one of: a III-V material and a II-VI material.

Abstract: A device for propagating light is described, comprising: a substrate having a semiconductor material, an insulating layer, wherein the insulating layer is arranged on the substrate, a recess reaching through the insulating layer and into the substrate, wherein the recess is at least partially filled with a filler material, and a waveguide arranged in or on the filler material.

Abstract: A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.

Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

Abstract: The present invention is directed to a photonic circuit device for optical gain measurement, including: a substrate with a photonic circuit; an active gain section; at least two light couplers arranged such that at least a part of the active gain section is between the light couplers; and a partial reflector arranged to reflect light propagating along the same direction back to a center of the gain section, and wherein the device does not include any other reflector opposite to the partial reflector with respect to the active gain section and configured to reflect light back to the center of the gain section. The present invention is further directed to related gain measurement methods.

Abstract: An integrated device includes at least one heat generating component which generates heat when operated, at least one temperature-sensitive component, and one or more hollow insulation regions arranged between the at least one heat generating component and the at least one temperature-sensitive component. The hollow insulation region may be provided as a vacuum gap.

Abstract: An apparatus includes an optical adaptor having monolithically integrated optical elements and first micro-mechanical features, the latter defining at least a first horizontal reference surface and a first vertical reference surface; wherein the first horizontal reference surface is perpendicular to an optical plane, the latter being perpendicular the optical axis of the optical elements; and wherein the first vertical reference surface is perpendicular to the first horizontal reference surface and parallel to the optical axis.

Abstract: An apparatus includes an optical adaptor having monolithically integrated optical elements and first micro-mechanical features, the latter defining at least a first horizontal reference surface and a first vertical reference surface; wherein the first horizontal reference surface is perpendicular to an optical plane, the latter being perpendicular the optical axis of the optical elements; and wherein the first vertical reference surface is perpendicular to the first horizontal reference surface and parallel to the optical axis.

Abstract: An apparatus includes an optical adaptor having monolithically integrated optical elements and first micro-mechanical features, the latter defining at least a first horizontal reference surface and a first vertical reference surface; wherein the first horizontal reference surface is perpendicular to an optical plane, the latter being perpendicular the optical axis of the optical elements; and wherein the first vertical reference surface is perpendicular to the first horizontal reference surface and parallel to the optical axis.

Abstract: Disclosed are optoelectronic integrated circuit structures that incorporate a first optical waveguide, having a semiconductor core, indirectly coupled to a grating coupler through a second optical waveguide, having a dielectric core, in order provide a relatively large alignment tolerance. The dielectric core can comprise multiple dielectric layers above one end of the semiconductor core and extending laterally over an isolation region adjacent to that end. The grating coupler can include dielectric fins above the isolation region. Alternatively, the grating coupler can include semiconductor fins within the isolation region. Also disclosed herein are methods of forming such optoelectronic integrated circuit structures that can be readily integrated with complementary metal oxide semiconductor (CMOS) device processing and germanium photodetector processing.

Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

Abstract: A photonic circuit device can include a light-generating structure and at least two electrical contact pads. The light-generating structure can include: an n-doped semiconductor layer; a p-doped semiconductor layer; and an active gain section. The active gain section can include layers stacked along a stacking direction; can be arranged between the semiconductor layers; and can be coupled in the photonic circuit. The electrical contact pads can include an n-contact electric pad and a p-contact electric pad, in electrical contact with the n-doped semiconductor layer and the p-doped semiconductor layer, respectively. One of the pads can be in direct contact with the light-generating structure. In embodiments, the ratio of a width of the one of the electrical contact pads to the width of the active gain section can be between 1.35 and 3.85 measured in a direction that is orthogonal to each of the stacking direction and the propagation direction.

Abstract: The present invention relates to a semiconductor device (1) for use in at least an optical application comprising: at least an optically passive aspect (2) that is operable in substantially an optically passive mode, and at least an optically active material (3) comprising at least a material that is operable in substantially an optically active mode, wherein: the optically passive aspect (2) further comprises at least a crystalline seed layer (4), the optically active material (3) being epitaxially grown in at least a predefined structure (5) provided in the optically passive aspect (2) that extends to at least an upper surface (4?) of the crystalline seed layer (4), and the optically passive aspect (2) is structured to comprise at least a passive photonic structure (6), wherein the crystalline seed layer (4) comprises a crystalline wafer and wherein the optically active material (3) comprises at least one of: a III-V material and a II-VI material.

Abstract: A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

Abstract: An integrated device includes at least one heat generating component which generates heat when operated, at least one temperature-sensitive component, and one or more hollow insulation regions arranged between the at least one heat generating component and the at least one temperature-sensitive component. The hollow insulation region may be provided as a vacuum gap.