Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

Abstract: A motor for an air compressor is provided. The motor includes a stator including a first coil to generate a magnetic flux for driving the motor and a second coil positioned in a space the same as a space for the first coil to increase an inductance, and a rotator to mutually interact with the stator to rotate.

Abstract: A valve device includes: a valve housing having a valve passage connected with an air flow passage; a valve disk rotatably disposed inside the valve housing through a valve driver and changing air flow cross-section of the valve passage; and a porous member installed at the valve disk and positioned in an open section between the valve disk and the valve passage.

Abstract: A humidifying device, which exchanges moisture between air supplied from an air compressor and air exhausted from the fuel cell, for a fuel cell, includes: a housing main body; at least one humidifying membrane module disposed in the housing main body; and a valve assembly which is disposed in the housing main body and adjusts a supply amount of exhaust air flowed into the at least one humidifying membrane module based on a predetermined supply amount of supply air flowed into the at least one humidifying membrane module.

Abstract: Disclosed is a black phosphorus-polymer composite solid electrolyte including a polymer network structure in which nanofibers made of a second polymer material are connected to each other; a first polymer material received in the polymer network structure and having ionic conductivity; black phosphorus dispersed in the first polymer material, wherein the black phosphorus has an oxygen containing functional group; and a lithium salt compound contained in the first polymer material.

Abstract: An air shut-off valve apparatus for a fuel cell system is provided. The apparatus includes a valve body having an inlet-side air passage through which supply air flows and an outlet-side air passage through which exhaust air flows. A valve flap is installed in the valve body to open or close the inlet-side air passage and the outlet-side air passage. An inlet-side check valve is opened when pressure of the supply air is greater than or equal to a predetermined pressure, to guide the supply air into the fuel cell stack through the inlet-side air passage even while the valve flap is closed. An outlet-side check valve is opened when pressure of the exhaust air is greater than or equal to a predetermined pressure, to guide the exhaust air released from the fuel cell stack to flow through the outlet-side air passage even while the valve flap is closed.

Abstract: There is provided a variable resistance memory device including a first electrode line layer including first electrode lines extending in a first direction and spaced apart from each other on a substrate, a second electrode line layer that is above the first electrode line layer and including second electrode lines extending in a second direction orthogonal to the first direction and spaced apart from each other, and a memory cell layer including memory cells between the first electrode line layer and the second electrode line layer. Each of the memory cells includes a selection device layer, an intermediate electrode layer, and a variable resistance layer. A first insulating layer is between the first electrode lines, a second insulating layer is between the memory cells, and a third insulating layer is between the second electrode lines. The second insulating layer includes air gaps on side surfaces of the memory cells.

Abstract: Lignin gel-based electrolyte is disclosed. The lignin gel-based electrolyte includes a lignin polymer network containing lignin molecules and a crosslinking agent to crosslink the lignin molecules; and liquid electrolyte contained within the lignin polymer network. The lignin gel-based electrolyte may have high ionic conductivity and maintain excellent mechanical stability.

Abstract: An air shut-off valve apparatus for a fuel cell system is provided. The apparatus includes a valve body having an inlet-side air passage through which supply air flows and an outlet-side air passage through which exhaust air flows. A valve flap is installed in the valve body to open or close the inlet-side air passage and the outlet-side air passage. An inlet-side check valve is opened when pressure of the supply air is greater than or equal to a predetermined pressure, to guide the supply air into the fuel cell stack through the inlet-side air passage even while the valve flap is closed. An outlet-side check valve is opened when pressure of the exhaust air is greater than or equal to a predetermined pressure, to guide the exhaust air released from the fuel cell stack to flow through the outlet-side air passage even while the valve flap is closed.

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

Abstract: An apparatus for regulating pressure of exhaust gas of a fuel cell system includes porous foam mounted in an exhaust tube and having a plurality of pores therein and a regulator that compresses or expands the porous foam to regulate a differential pressure of the exhaust gas flowing through the exhaust tube.

Abstract: An air shut-off valve apparatus for a fuel cell system and a method of controlling the same are provided. In particular, hydrogen injected into a fuel cell stack is discharged by being diluted with external air when starting the fuel cell system. The apparatus includes a valve body that has an inlet air path connected to a cathode of the fuel cell stack and through which air injected into the fuel cell stack flows, and an outlet air path through which air discharged from the fuel cell stack flows. A bypass body is provided and includes a bypass air path that connects the inlet air path and the outlet air path and a valve flap is disposed at the valve body and opens and closes the inlet and outlet air paths at a first side thereof, and the bypass air path at a second side thereof.

Abstract: An apparatus and a method for controlling a humidification amount of a membrane humidifier for a fuel cell are provided. The humidification amount of the membrane humidifier relative to air supplied to a stack is changed by adjusting a difference in partial pressure of moisture between the inside and the exterior of a hollow fiber membrane that constitutes the membrane humidifier for a fuel cell.

Abstract: A variable resistance memory device may include a memory unit including a first electrode disposed on a substrate, a variable resistance pattern disposed on the first electrode and a second electrode disposed on the variable resistance pattern, a selection pattern disposed on the memory unit, and a capping structure covering a sidewall of the selection pattern. The capping structure may include a first capping pattern and a second capping pattern sequentially stacked on at least one sidewall of the selection pattern. The first capping pattern may be silicon pattern, and the second capping pattern may include a nitride.

Abstract: There is provided a variable resistance memory device including a first electrode line layer including first electrode lines extending in a first direction and spaced apart from each other on a substrate, a second electrode line layer that is above the first electrode line layer and including second electrode lines extending in a second direction orthogonal to the first direction and spaced apart from each other, and a memory cell layer including memory cells between the first electrode line layer and the second electrode line layer. Each of the memory cells includes a selection device layer, an intermediate electrode layer, and a variable resistance layer. A first insulating layer is between the first electrode lines, a second insulating layer is between the memory cells, and a third insulating layer is between the second electrode lines. The second insulating layer includes air gaps on side surfaces of the memory cells.

Abstract: A memory device includes a plurality of word lines extending along a first direction and spaced apart from each other along a second direction that is perpendicular to the first direction; a plurality of bit lines extending along the second direction and spaced apart from each other in the first direction, the plurality of bit lines being spaced apart from the plurality of word lines in a third direction that is perpendicular to both the first and second directions; and a plurality of memory cells being respectively arranged between the corresponding word and bit lines. Each of the memory cells includes a selection device layer, and a variable resistance layer, wherein the selection device layer includes a chalcogenide switching material having a composition according to a particular chemical formula.

Abstract: A variable resistance memory device includes a pattern of one or more first conductive lines, a pattern of one or more second conductive lines, and a memory structure between the first and second conductive lines. The pattern of first conductive lines extends in a first direction on a substrate, and the first conductive lines extend in a second direction crossing the first direction. The pattern of second conductive lines extends in the second direction on the first conductive lines, and the second conductive lines extend in the first direction. The memory structure vertically overlaps a first conductive line and a second conductive line. The memory structure includes an electrode structure, an insulation pattern on a central upper surface of the electrode structure, and a variable resistance pattern on an edge upper surface of the electrode structure. The variable resistance pattern at least partially covers a sidewall of the insulation pattern.

Abstract: A valve device includes: a valve housing having a valve passage connected with an air flow passage; a valve disk rotatably disposed inside the valve housing through a valve driver and changing air flow cross-section of the valve passage; and a porous member installed at the valve disk and positioned in an open section between the valve disk and the valve passage.

Abstract: A humidifying device, which exchanges moisture between air supplied from an air compressor and air exhausted from the fuel cell, for a fuel cell, includes: a housing main body; at least one humidifying membrane module disposed in the housing main body; and a valve assembly which is disposed in the housing main body and adjusts a supply amount of exhaust air flowed into the at least one humidifying membrane module based on a predetermined supply amount of supply air flowed into the at least one humidifying membrane module.

Abstract: A variable resistance memory device including a selection pattern; an intermediate electrode contacting a first surface of the selection pattern; a variable resistance pattern on an opposite side of the intermediate electrode relative to the selection pattern; and a first electrode contacting a second surface of the selection pattern and including a n-type semiconductor material, the second surface of the selection pattern being opposite the first surface thereof.