Abstract: A method of fabricating a semiconductor device includes forming a doped polysilicon layer on a substrate, forming a barrier layer on the doped polysilicon layer, forming an oxidized barrier layer by oxidizing a surface of the barrier layer, and forming a metal layer on the oxidized barrier layer.

Abstract: A fuel cell compound valve that opens and closes an inflow line and an exhaust line of a fuel cell stack for a hydrogen fuel cell vehicle includes a support frame having a first bore to which the exhaust line is connected and a second bore to which the inflow line is connected. A first rotation valve is configured to receive a driving torque of a motor installed in the support frame, rotate, and open and close the first bore. A second rotation valve is connected to the first rotation valve and is configured to open and close the second bore. A first coupler protrusion protrudes from a first shaft in a longitudinal direction and has at least one first flat surface perpendicular to the longitudinal direction. A second coupler protrusion protrudes from a second shaft in the longitudinal direction of the first shaft.

Abstract: An apparatus for detecting a filter contamination of a fuel cell includes: a signal transmitter configured to transmit at least one signal; a signal receiver configured to receive the at least one signal from the signal transmitter; and a resistor unit including a silver compound disposed between the signal transmitter and the signal receiver and having a resistance which varies according to a chemical reaction.

Abstract: In a method of manufacturing a phase change memory device, an insulating interlayer having a through opening is formed on a substrate, at least one conformal phase change material layer pattern is formed along the sides of the opening, and a plug-like phase change material pattern having a composition different from that of each conformal phase change material layer pattern is formed on the at least one conformal phase change material layer pattern as occupying a remaining portion of the opening. Energy is applied to the phase change material layer patterns to form a mixed phase change material layer pattern including elements from the conformal and plug-like phase change material layer patterns.

Abstract: A physical vapor deposition (PVD) apparatus for forming a phase-changeable layer includes a process chamber including a loading chamber configured to load a substrate, and a depositing chamber configured to deposit ion particles of a phase-changeable material onto the substrate; a target member on an upper portion of the depositing chamber and configured to provide the ion particles of the phase-changeable material which react with process gases in a plasma state; a plasma generator configured to generate a process gas plasma from the process gases; a chuck on a lower portion of the depositing chamber and holding the substrate, the chuck including a heater configured to heat the substrate, and at least one electrode configured to guide the ion particles of the phase-changeable material to the substrate; and a supplementary heater in the process chamber and configured to transfer radiant heat around the substrate.

Abstract: In a method of manufacturing a phase change memory device, an insulating interlayer having a through opening is formed on a substrate, at least one conformal phase change material layer pattern is formed along the sides of the opening, and a plug-like phase change material pattern having a composition different from that of each conformal phase change material layer pattern is formed on the at least one conformal phase change material layer pattern as occupying a remaining portion of the opening. Energy is applied to the phase change material layer patterns to form a mixed phase change material layer pattern including elements from the conformal and plug-like phase change material layer patterns.

Abstract: A fuel cell compound valve that opens and closes an inflow line and an exhaust line of a fuel cell stack for a hydrogen fuel cell vehicle includes a support frame having a first bore to which the exhaust line is connected and a second bore to which the inflow line is connected. A first rotation valve is configured to receive a driving torque of a motor installed in the support frame, rotate, and open and close the first bore. A second rotation valve is connected to the first rotation valve and is configured to open and close the second bore. A first coupler protrusion protrudes from a first shaft in a longitudinal direction and has at least one first flat surface perpendicular to the longitudinal direction. A second coupler protrusion protrudes from a second shaft in the longitudinal direction of the first shaft.

Abstract: Example methods of filling an opening and of manufacturing a phase change memory device are disclosed. In an example method, an insulation layer having an opening is formed on a substrate. A material layer is formed on the insulation layer. The material layer fills the opening, and has a void. A first laser beam is irradiated onto the material layer, thereby removing the void or reducing a size of the void. The first laser beam is generated from a solid state laser medium.

Abstract: An air cell system provided with emergency air port and an emergency air port is provided. In particular, an emergency port plate is provided between a suction block valve and a blower along air suction line of a fuel cell system or between a humidifier along an air suction line and a discharge block valve along an air discharge line and a wire is connected to the emergency port plate accordingly. Additionally, an operating assembly which enables the air suction line or the air discharge line to be in fluid communication with an external environment by pulling a wire to brake the emergency port plate when the suction block valve or the discharge block valve is not operating properly is also provided to provide a failsafe system for valve failure.

Abstract: A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process is performed on the phase change material layer to remove an oxide layer on a surface of the phase change material layer. A heat treatment process is performed on the phase change material layer to remove a void or a seam in the phase change material layer, sufficiently filling the opening.

Abstract: An example embodiment relates to a method including forming a bottom electrode and an insulating layer on a substrate, the insulating layer defining a first opening that exposes a portion of the bottom electrode. The method includes forming a variable resistance material pattern, including a plurality of elements, to fill the first opening. The variable resistance material pattern may be doped with a dopant that includes at least one of the plurality of elements in the variable resistance material pattern. The method includes forming a top electrode on the variable resistance material pattern.

Abstract: Provided are a phase change memory device and a fabricating method thereof. The phase change memory device includes a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memory cell formed in the first and second contact holes and including a diode, a first electrode on the diode, a phase change material layer on the first electrode, and a second electrode on the phase change material layer, wherein the first contact hole and the second contact hole are spaced apart from and separated from each other.

Abstract: A method of forming a resistance variable memory device, the method including forming a diode on a semiconductor substrate; forming a lower electrode on the diode; forming a first insulating film on the lower electrode, the first insulating film having an opening; forming a resistance variable film filling the opening such that the resistance variable film includes an amorphous region adjacent to a sidewall of the opening and a crystalline region adjacent to the lower electrode; and forming an upper electrode on the resistance variable film.

Abstract: A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.

Abstract: A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.

Abstract: A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process is performed on the phase change material layer to remove an oxide layer on a surface of the phase change material layer. A heat treatment process is performed on the phase change material layer to remove a void or a seam in the phase change material layer, sufficiently filling the opening.

Abstract: A method of fabricating a phase change memory having a unit memory cell is described. The unit memory cell includes a phase change element connected to a corresponding vertical cell diode. The phase change element is formed from a phase change material layer formed on an interlayer dielectric layer including a via hole, and etched using a plasma formed from a plasma gas having a molecular weight of 17 or less to form a respective phase change material pattern in the via hole.

Abstract: The present invention relates to a grinding wheel assembly usable in a polishing machine for finishing a surface or floor, and more particularly, to a grinding wheel assembly for facilitating attachment and detachment of a grinding tool, capable of preventing damage to the grinding tool caused by centrifugal and frictional force produced by high speed rotation, and which reduces working time and enables convenient use due to easy replacement of the grinding tool. The grinding wheel assembly includes a ferromagnetic grinding tool, and a disk-shaped grinding wheel including a tool mounting part with a recess shape sized for mounting the grinding tool and a magnet embedded in one side. When required, a protruding separation prevention pin is provided to stably mount the grinding to the tool mounting part and a push injector pin is provided to facilitate attachment and detachment of the grinding tool.

Abstract: An example embodiment relates to a method including forming a bottom electrode and an insulating layer on a substrate, the insulating layer defining a first opening that exposes a portion of the bottom electrode. The method includes forming a variable resistance material pattern, including a plurality of elements, to fill the first opening. The variable resistance material pattern may be doped with a dopant that includes at least one of the plurality of elements in the variable resistance material pattern. The method includes forming a top electrode on the variable resistance material pattern.

Abstract: A method of forming a resistance variable memory device, the method including forming a diode on a semiconductor substrate; forming a lower electrode on the diode; forming a first insulating film on the lower electrode, the first insulating film having an opening; forming a resistance variable film filling the opening such that the resistance variable film includes an amorphous region adjacent to a sidewall of the opening and a crystalline region adjacent to the lower electrode; and forming an upper electrode on the resistance variable film.