Abstract: A memory device includes a plurality of word lines extending along a first direction and spaced apart from each other along a second direction that is perpendicular to the first direction; a plurality of bit lines extending along the second direction and spaced apart from each other in the first direction, the plurality of bit lines being spaced apart from the plurality of word lines in a third direction that is perpendicular to both the first and second directions; and a plurality of memory cells being respectively arranged between the corresponding word and bit lines. Each of the memory cells includes a selection device layer, and a variable resistance layer, wherein the selection device layer includes a chalcogenide switching material having a composition according to a particular chemical formula.

Abstract: A memory device includes a variable resistance layer and a selection device layer electrically connected to the variable resistance layer. The memory device further included a chalcogenide switching material that reduces leakage current and has, for example, a composition according to chemical formula 1 below, [GeXSiY(AsaTe1-a)Z](1-U)[N]U??(1) (where 0.05?X?0.1, 0.15?Y?0.25, 0.7?Z?0.8, X+Y+Z=1, 0.45?a?0.6, and 0.08?U?0.2).

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

Abstract: There is provided a non-volatile memory device which can enhance the reliability of a memory device by using an ovonic threshold switch (OTS) selection element including a multilayer structure. The non-volatile memory device includes a first electrode and a second electrode spaced apart from each other, a selection element layer between the first electrode and the second electrode, which is closer to the second electrode rather than to the first electrode, and which includes a first chalcogenide layer, a second chalcogenide layer, and a material layer disposed between the first and second chalcogenide layers. The first chalcogenide layer including a first chalcogenide material, and the second chalcogenide layer including a second chalcogenide material. A memory layer between the first electrode and the selection element layer includes a third chalcogenide material which is different from the first and second chalcogenide materials.

Abstract: A cooking apparatus may include a main body forming an outward appearance of the oven and having with a cooking room within the main body, a door on one side of the main body configured to selectively open and close the cooking room, a manipulation unit in and/or on an external surface of the main body, configured to enable a user to input a popcorn cooking command, a display displaying a cooking state according to the popcorn cooking command, a driving unit configured to heat a plurality of corn grains in the cooking room, a memory storing a popcorn cooking algorithm adapted to control the driving unit to cook the popcorn, and a control unit controlling the driving unit in response to the popcorn cooking algorithm. The control unit consecutively or continuously drives the driving unit for a first set time, intermittently drives the driving unit for a second set time after the first set time, and consecutively or continuously drives the driving unit for a third set time after the second set time.

Abstract: An apparatus and a method for controlling a humidification amount of a membrane humidifier for a fuel cell are provided. The humidification amount of the membrane humidifier relative to air supplied to a stack is changed by adjusting a difference in partial pressure of moisture between the inside and the exterior of a hollow fiber membrane that constitutes the membrane humidifier for a fuel cell.

Abstract: An air shut-off valve apparatus for a fuel cell system and a method of controlling the same are provided. In particular, hydrogen injected into a fuel cell stack is discharged by being diluted with external air when starting the fuel cell system. The apparatus includes a valve body that has an inlet air path connected to a cathode of the fuel cell stack and through which air injected into the fuel cell stack flows, and an outlet air path through which air discharged from the fuel cell stack flows. A bypass body is provided and includes a bypass air path that connects the inlet air path and the outlet air path and a valve flap is disposed at the valve body and opens and closes the inlet and outlet air paths at a first side thereof, and the bypass air path at a second side thereof.

Abstract: An apparatus and a method for controlling a humidification amount of a membrane humidifier for a fuel cell are provided. The humidification amount of the membrane humidifier relative to air supplied to a stack is changed by adjusting a difference in partial pressure of moisture between the inside and the exterior of a hollow fiber membrane that constitutes the membrane humidifier for a fuel cell.

Abstract: Disclosed herein is an air shut-off valve for a fuel cell system that can completely close an air passage (11) communicating with a cathode of a fuel cell stack, even though a butterfly-type valve is employed, upon the halt of operation of the fuel cell system, thereby greatly improving the durability of the fuel cell stack.

Abstract: A thrust bearing includes: a thrust plate in a disc shape having an outer diameter and an inner diameter formed by perforating a central portion of the thrust plate; a plurality of bump foils disposed radially on a top surface of the thrust plate; a plurality of top foils in a panel shape covering each of the bump foils, where bottom surfaces of the top foils are in contact with upper ends of the bump foils; and metal blocks radially disposed on the top surface of the thrust plate and formed to be spaced apart from the bump foils. The thrust bearing can be included in an air compressor of a vehicle.

Abstract: An apparatus for detecting a filter contamination of a fuel cell includes: a signal transmitter configured to transmit at least one signal; a signal receiver configured to receive the at least one signal from the signal transmitter; and a resistor unit including a silver compound disposed between the signal transmitter and the signal receiver and having a resistance which varies according to a chemical reaction.

Abstract: There is provided a non-volatile memory device which can enhance the reliability of a memory device by using an ovonic threshold switch (OTS) selection element including a multilayer structure. The non-volatile memory device includes a first electrode and a second electrode spaced apart from each other, a selection element layer between the first electrode and the second electrode, which is closer to the second electrode rather than to the first electrode, and which includes a first chalcogenide layer, a second chalcogenide layer, and a material layer disposed between the first and second chalcogenide layers. The first chalcogenide layer including a first chalcogenide material, and the second chalcogenide layer including a second chalcogenide material. A memory layer between the first electrode and the selection element layer includes a third chalcogenide material which is different from the first and second chalcogenide materials.

Abstract: A memory device includes a variable resistance layer and a selection device layer electrically connected to the variable resistance layer. The memory device further included a chalcogenide switching material that reduces leakage current and has, for example, a composition according to chemical formula 1 below, [GeXSiY(AsaTe1-a)Z](1-U)[N]U??(1) (where 0.05?X?0.1, 0.15?Y?0.25, 0.7?Z?0.8, X+Y+Z=1, 0.45?a?0.6, and 0.08?U?0.2).

Abstract: A method of fabricating a semiconductor device includes forming a doped polysilicon layer on a substrate, forming a barrier layer on the doped polysilicon layer, forming an oxidized barrier layer by oxidizing a surface of the barrier layer, and forming a metal layer on the oxidized barrier layer.

Abstract: A thrust bearing includes: a thrust plate in a disc shape having an outer diameter and an inner diameter formed by perforating a central portion of the thrust plate; a plurality of bump foils disposed radially on a top surface of the thrust plate; a plurality of top foils in a panel shape covering each of the bump foils, where bottom surfaces of the top foils are in contact with upper ends of the bump foils; and metal blocks radially disposed on the top surface of the thrust plate and formed to be spaced apart from the bump foils. The thrust bearing can be included in an air compressor of a vehicle.

Abstract: A variable resistance memory device includes a pattern of one or more first conductive lines, a pattern of one or more second conductive lines, and a memory structure between the first and second conductive lines. The pattern of first conductive lines extends in a first direction on a substrate, and the first conductive lines extend in a second direction crossing the first direction. The pattern of second conductive lines extends in the second direction on the first conductive lines, and the second conductive lines extend in the first direction. The memory structure vertically overlaps a first conductive line and a second conductive line. The memory structure includes an electrode structure, an insulation pattern on a central upper surface of the electrode structure, and a variable resistance pattern on an edge upper surface of the electrode structure. The variable resistance pattern at least partially covers a sidewall of the insulation pattern.

Abstract: A variable resistance memory device including a selection pattern; an intermediate electrode contacting a first surface of the selection pattern; a variable resistance pattern on an opposite side of the intermediate electrode relative to the selection pattern; and a first electrode contacting a second surface of the selection pattern and including a n-type semiconductor material, the second surface of the selection pattern being opposite the first surface thereof.

Abstract: A variable resistance memory device includes a first electrode layer and a selection device layer on the first electrode layer. The selection device layer includes a first chalcogenide material obtained by doping at least one of boron or carbon into a chalcogenide switching material. A second electrode layer is on the selection device layer. A variable resistance layer is on the second electrode layer. The variable resistance layer includes a second chalcogenide material including at least one different element from the chalcogenide switching material. A third electrode layer is on the variable resistance layer.

Abstract: Disclosed herein is an air shut-off valve for a fuel cell system that can completely close an air passage (11) communicating with a cathode of a fuel cell stack, even though a butterfly-type valve is employed, upon the halt of operation of the fuel cell system, thereby greatly improving the durability of the fuel cell stack.

Abstract: An apparatus and a method for controlling a humidification amount of a membrane humidifier for a fuel cell are provided. The humidification amount of the membrane humidifier relative to air supplied to a stack is changed by adjusting a difference in partial pressure of moisture between the inside and the exterior of a hollow fiber membrane that constitutes the membrane humidifier for a fuel cell.