Abstract: There are provided a power module in which a bias voltage is varied and supplied to a control circuit controlling power conversion when an idle mode is switched to a normal mode, and a distributed power supply apparatus having the same. The power module includes: a power factor correction stage; a DC/DC conversion stage switching power to convert the power into pre-set DC power in a powering mode in which normal power is output; a standby stage converting the power into pre-set standby power in a cold standby mode in which the DC/DC conversion stage outputs power having a level lower than that of normal power; and a variable bias supply unit varying a voltage level of bias power for controlling DC/DC power conversion and supplying the same to the DC/DC conversion stage in the cold standby mode and the powering mode.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of fins by forming a plurality of first device isolating trenches repeated at a first pitch in a substrate, forming a plurality of fin-type active areas protruding from a top surface of a first device isolating layer by forming the first device isolating layer in the plurality of first device isolating trenches, forming a plurality of second device isolating trenches at a pitch different from the first pitch by etching a portion of the substrate and the first device isolating layer, and forming a second device isolating layer in the plurality of second device isolating trenches, so as to form a plurality of fin-type active area groups separated from each other with the second device isolating layer therebetween.

Abstract: Technologies are described herein for adaptively controlling the size of a write cache in a storage device based on the time required to flush the cache. Upon receiving a write command at a controller for the storage device, an estimated cache flush time for the write cache is calculated based on the write commands contained therein. If the estimated cache flush time is greater than a maximum threshold time, the size of the write cache is decreased to control the cache flush time. If the estimated cache flush time is less than a minimum threshold time, the size of the write cache is increased to enhance random write performance.

Abstract: An apparatus for mounting a portable terminal is provided and may include a plurality of fixators configured to move in diagonal directions of one surface of the portable terminal and fix corners of the portable terminal. A controller is configured to detect the portable terminal and execute the movement of the fixators so that the fixators closely adhere to the corners of the portable terminal.

Abstract: A wireless charging system for a variable charging mode includes: an information receiver configured to receive information about a wireless power receiver including a wireless charging mode that is supported by the wireless power receiver through a wireless communication connected to the wireless power receiver; wireless power transmitting units configured to wirelessly transmit power by a plurality of different wireless charging modes; and a controller configured to control the wireless power transmitting units to wireless transmit power by the wireless charging mode corresponding to the received information.

Abstract: Embodiments of the invention provide a power supply apparatus, including an AC/DC rectifying unit converting an AC voltage into a DC voltage, a power factor correction unit correcting a power factor of the DC voltage, and a DC/DC conversion unit converting the DC voltage having the corrected power factor into a DC voltage having a different magnitude therefrom. According to various embodiments, the power supply apparatus further includes an auxiliary winding connected to a primary side winding of a transformer of the DC/DC conversion unit and generating the DC voltage having a predetermined magnitude, and an internal power generation unit connected to an output terminal of the power factor correction unit and the auxiliary winding and using a voltage of the output terminal of the power factor correction unit and a voltage generated by the auxiliary winding to generate temporary Vcc power and supply the generated temporary Vcc power as internal power of the power factor correction unit.

Abstract: A wireless charge system includes a wireless charger configured to wirelessly transfer power to an apparatus including a battery in order to charge the battery; a fixing unit configured to fix the apparatus so that the apparatus cannot be moved separately from the wireless charger while wirelessly receiving the power from the wireless charger; and a display configured to provide an indication of a charged state of the battery, wherein the wireless charger, the fixing unit, and the display are formed in a door pocket included in a door of a vehicle.

Abstract: In a method of manufacturing a semiconductor device, a dummy gate structure including a dummy gate insulation layer pattern, a dummy gate electrode and a gate mask sequentially stacked are formed on a substrate. An interlayer insulating layer including tonen silazane (TOSZ) is formed on the substrate to cover the dummy gate structure. An upper portion of the interlayer insulating layer is planarized until a top surface of the gate mask is exposed to form an interlayer insulating layer pattern. The exposed gate mask, and the dummy gate electrode and the dummy gate insulation layer pattern under the gate mask are removed to form an opening exposing a top surface of the substrate. The dummy gate insulation layer pattern is removed using an etchant including hydrogen fluoride (HF), but the interlayer insulating layer pattern remains. A gate structure is formed to fill the opening.

Abstract: A method of fabricating a semiconductor device includes forming an inter-metal dielectric layer including a first trench and a second trench which are spaced from each other on a substrate, forming a first dielectric layer along the sides and bottom of the first trench, forming a second dielectric layer along the sides and bottom of the second trench, forming first and second lower conductive layers on the first and second dielectric layers, respectively, forming first and second capping layers on the first and second lower conductive layer, respectively, performing a heat treatment after the first and second capping layers have been formed, removing the first and second capping layers and the first and second lower conductive layers after performing the heat treatment, and forming first and second metal gate structures on the first and second dielectric layers, respectively.

Abstract: Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of manufacturing of the semiconductor device. The method includes forming a first insulation layer pattern on a substrate having a gate pattern and a source/drain region formed at both sides of the gate pattern, the first insulation layer pattern having an exposed portion of the source/drain region, forming a silicide layer on the exposed source/drain region, forming a second insulation layer on the entire surface of the substrate to cover the first insulation layer pattern and the silicide layer, and forming a contact hole in the second insulation layer to expose the silicide layer.

Abstract: An electronic device is provided. The electronic device includes a printed circuit board, at least one electronic component disposed on the printed circuit board, a shield can disposed on the printed circuit board to shield the at least one electronic component, and at least one heat pipe disposed adjacent to at least a part of the shield can.

Abstract: A method of fabricating a semiconductor device includes forming a gate pattern on a substrate, and etching sides of the gate pattern using a first wet-etching process to form a first recess. The first wet-etching process includes using an etchant containing a first chemical substance including a hydroxyl functional group (—OH) and a second chemical substance capable of oxidizing the substrate. The concentration of the second chemical substance is 1.5 times or less the concentration of the first chemical substance.

Abstract: There is provided a phase shift full bridge (PSFB) type power supply device controlling a switching on time of lagging leg switches according to a load state. The power supply device includes a power supply unit supplying preset DC power by switching input power using a full bridge by a phase shift method; and a control unit controlling a switching time of a switch of the full bridge according to a load state in which the DC power is received from the power supply unit.

Abstract: In a motor according to the present invention configured of a stator core having a plurality of teeth formed in a radial shape and an upper insulator and a lower insulator surrounding an upper portion and a lower portion of the stator core, the motor includes a hall sensor cover combined on a top of the teeth of the upper insulator and having a plurality of hall sensors, and a hall sensor resting unit for resting lower end portions of the hall sensors is formed on a top of one end portions of the teeth of the upper insulator.

Abstract: An exhaust gas recirculation control apparatus includes: an EGR valve adjusting a flow rate of EGR gas recirculated from an exhaust manifold to an intake manifold; a manifold absolute pressure (MAP) sensor measuring pressure inside the intake manifold; a throttle valve controlling the amount of inflow air; an igniter spraying fuel; an acceleration pedal angular position sensor; a crank position sensor measuring engine RPM; a vehicle speed sensor measuring a speed of a vehicle; and a control portion receiving a pressure signal from the MAP sensor, calculating a ratio of the EGR gas for a total volume of the intake manifold by using pressure variance inside the intake manifold, calculating pressure of the EGR gas by multiplying the pressure of the intake manifold and the ratio of the EGR gas, and converting the pressure of the EGR gas to a flow rate of the EGR gas.

Abstract: A semiconductor device includes a gate spacer defining a trench. The trench includes a first part and a second part sequentially positioned on a substrate. An inner surface of the first part has a slope of an acute angle and an inner surface of the second part has a slope of a right angle or obtuse angle with respect to the substrate. A gate electrode fills at least a portion of the trench.

Abstract: Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers.

Abstract: A method of fabricating a semiconductor device, the method including forming on a substrate a transistor that includes a gate electrode and a source and drain region, forming an interlayer insulating film on the transistor, forming a contact hole in the interlayer insulating film to expose a top surface of the source and drain region, and a thin film is formed at an interface between the contact hole and the exposed top surface of the source and drain region. The method further including selectively removing at least a portion of the thin film by performing an etching process in a non-plasma atmosphere, forming an ohmic contact film on the source and drain region where at least a portion of the thin film was selectively removed, and forming a contact plug by filling the contact hole with a conductive material.

Abstract: An electronic apparatus may include a circuit board, a processor disposed on an upper surface of the circuit board, and a memory disposed on a lower surface of the circuit board, such that the lower surface of the circuit board where the processor is arranged overlaps an area corresponding to where the memory is disposed.

Abstract: A method for forming a trench includes etching an oxide layer to form a trench therein, conformally forming a first reaction layer along a surface of the trench, the first reaction layer including a first region on an upper portion of the trench and a second region on a lower portion of the trench, forming a barrier layer by reacting a first amount of etching gas with the first region of the first reaction layer, and etching the oxide layer on a lower portion of the second region by reacting a second amount of etching gas with the second region of the first reaction layer, the second amount of etching gas being greater than the first amount of etching gas.