Patents by Inventor Jeong Soo Byun
Jeong Soo Byun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7465666Abstract: In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.Type: GrantFiled: June 21, 2007Date of Patent: December 16, 2008Assignee: Applied Materials, Inc.Inventors: Moris Kori, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung, Ashok Sinha, Ming Xi
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Publication number: 20080280438Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.Type: ApplicationFiled: July 24, 2008Publication date: November 13, 2008Inventors: Ken Kaung Lai, Ravi Rajagopalan, Amit Khandelwal, Madhu Moorthy, Srinivas Gandikota, Joseph Castro, Aygerinos V. Gelatos, Cheryl Knepfler, Ping Jian, Hongbin Fang, Chao-Ming Huang, Ming Xi, Michael X. Yang, Hua Chung, Jeong Soo Byun
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Publication number: 20080227291Abstract: Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 ?, such as about 15 ?. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.Type: ApplicationFiled: May 28, 2008Publication date: September 18, 2008Inventors: KEN K. LAI, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
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Patent number: 7405158Abstract: In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer.Type: GrantFiled: January 19, 2005Date of Patent: July 29, 2008Assignee: Applied Materials, Inc.Inventors: Ken Kaung Lai, Ravi Rajagopalan, Amit Khandelwal, Madhu Moorthy, Srinivas Gandikota, Joseph Castro, Averginos V. Gelatos, Cheryl Knepfler, Ping Jian, Hongbin Fang, Chao-Ming Huang, Ming Xi, Michael X. Yang, Hua Chung, Jeong Soo Byun
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Publication number: 20080166893Abstract: A method of forming a semiconductor structure includes oxidizing a gate stack at a temperature of at most 600° C. with a plasma prepared from a gas mixture. The gas mixture includes an oxygen-containing gas and ammonia, and the gate stack is on a semiconductor substrate. The gate stack contains a gate layer, a conductive layer on the gate layer, a metal layer on the conductive layer, and a capping layer on the metal layer.Type: ApplicationFiled: January 3, 2008Publication date: July 10, 2008Inventors: Jeong Soo Byun, Krishnaswamy Ramkumar
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Patent number: 7384867Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.Type: GrantFiled: August 18, 2005Date of Patent: June 10, 2008Assignee: Applied Materials, Inc.Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
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Patent number: 7294588Abstract: A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.Type: GrantFiled: March 24, 2006Date of Patent: November 13, 2007Assignee: Applied Materials, Inc.Inventors: M. Ziaul Karim, DongQing Li, Jeong Soo Byun, Thanh N. Pham
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Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
Patent number: 7238552Abstract: A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH3 or B2H6, followed by introduction of a tungsten containing compound, such as WF6, to form a tungsten layer. It is believed that the reductant reduces the fluorine content of the tungsten layer while improving the step coverage and resistivity of the tungsten layer. It is believed that the improved characteristics of the tungsten film are attributable to the chemical affinity between the reductants and the tungsten containing compound. The chemical affinity provides better surface mobility of the adsorbed chemical species and better reduction of WF6 at the nucleation stage of the tungsten layer. The method can further include sequentially introducing a reductant, such as PH3 or B2H6, and a tungsten containing compound to deposit a tungsten layer. The formed tungsten layer can be used as a nucleation layer followed by bulk deposition of a tungsten layer utilizing standard CVD techniques.Type: GrantFiled: May 17, 2005Date of Patent: July 3, 2007Assignee: Applied Materials, Inc.Inventor: Jeong Soo Byun -
Patent number: 7235486Abstract: In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to a first reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method may further provide exposing the substrate to a deposition gas comprising a second reducing gas and the tungsten precursor gas to form a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples include that the ALD and CVD processes are conducted in the same deposition chamber or in different deposition chambers.Type: GrantFiled: August 29, 2006Date of Patent: June 26, 2007Assignee: Applied Materials, Inc.Inventors: Moris Kori, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung, Ashok Sinha, Ming Xi
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Patent number: 7208413Abstract: A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound and one refractory metal compound onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure comprises two or more refractory metals. The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound and two or more refractory metal compounds on a substrate.Type: GrantFiled: November 19, 2004Date of Patent: April 24, 2007Assignee: Applied Materials, Inc.Inventors: Jeong Soo Byun, Alfred Mak
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Patent number: 7115494Abstract: A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.Type: GrantFiled: January 24, 2006Date of Patent: October 3, 2006Assignee: Applied Materials, Inc.Inventors: Ashok Sinha, Ming Xi, Moris Kori, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung
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Patent number: 7085616Abstract: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.Type: GrantFiled: July 27, 2001Date of Patent: August 1, 2006Assignee: Applied Materials, Inc.Inventors: Barry L. Chin, Alfred W. Mak, Lawrence Chung-Lai Lei, Ming Xi, Hua Chung, Ken Kaung Lai, Jeong Soo Byun
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Patent number: 7049211Abstract: A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components.Type: GrantFiled: March 25, 2005Date of Patent: May 23, 2006Assignee: Applied MaterialsInventors: M. Ziaul Karim, DongQing Li, Jeong Soo Byun, Thanh N. Pham
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Patent number: 7033945Abstract: A method of filling a gap formed between adjacent raised surfaces on a substrate. In one embodiment the method comprises depositing a boron-doped silica glass (BSG) layer over the substrate to partially fill the gap using a thermal CVD process; exposing the BSG layer to a steam ambient at a temperature above the BSG layer's Eutectic temperature; removing an upper portion of the BSG layer by exposing the layer to a fluorine-containing etchant; and depositing an undoped silica glass (USG) layer over the BSG layer to fill the remainder of the gap.Type: GrantFiled: June 1, 2004Date of Patent: April 25, 2006Assignee: Applied MaterialsInventors: Jeong Soo Byun, Zheng Yuan, Shankar Venkataraman, M. Ziaul Karim, Thanh N. Pham, Ellie Y. Yieh
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Patent number: 7033922Abstract: A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.Type: GrantFiled: September 29, 2004Date of Patent: April 25, 2006Assignee: Applied Materials. Inc.Inventors: Moris Kori, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung, Ashok Sinha, Ming Xi
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Patent number: 6939804Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.Type: GrantFiled: November 18, 2002Date of Patent: September 6, 2005Assignee: Applied Materials, Inc.Inventors: Ken K. Lai, Jeong Soo Byun, Frederick C. Wu, Ramanujapuran A. Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K. Sinha, Hua Chung, Hongbin Fang, Alfred W. Mak, Michael X. Yang, Ming Xi
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Method and apparatus for depositing tungsten after surface treatment to improve film characteristics
Patent number: 6936538Abstract: A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH3 or B2H6, followed by introduction of a tungsten containing compound, such as WF6, to form a tungsten layer. It is believed that the reductant reduces the fluorine content of the tungsten layer while improving the step coverage and resistivity of the tungsten layer. It is believed that the improved characteristics of the tungsten film are attributable to the chemical affinity between the reductants and the tungsten containing compound. The chemical affinity provides better surface mobility of the adsorbed chemical species and better reduction of WF6 at the nucleation stage of the tungsten layer. The method can further include sequentially introducing a reductant, such as PH3 or B2H6, and a tungsten containing compound to deposit a tungsten layer. The formed tungsten layer can be used as a nucleation layer followed by bulk deposition of a tungsten layer utilizing standard CVD techniques.Type: GrantFiled: July 15, 2002Date of Patent: August 30, 2005Assignee: Applied Materials, Inc.Inventor: Jeong Soo Byun -
Patent number: 6903031Abstract: A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450° C.Type: GrantFiled: September 3, 2003Date of Patent: June 7, 2005Assignee: Applied Materials, Inc.Inventors: M. Ziaul Karim, DongQing Li, Jeong Soo Byun, Thanh N. Pham
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Patent number: 6855368Abstract: A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.Type: GrantFiled: July 25, 2000Date of Patent: February 15, 2005Assignee: Applied Materials, Inc.Inventors: Moris Kori, Alfred W. Mak, Jeong Soo Byun, Lawrence Chung-Lai Lei, Hua Chung
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Patent number: 6849545Abstract: A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer. Then, the adhesion layer is serially exposed to third and fourth reactive gases to form a barrier layer adjacent to the adhesion layer. This is followed by deposition of a copper layer adjacent to the barrier layer.Type: GrantFiled: June 20, 2001Date of Patent: February 1, 2005Assignee: Applied Materials, Inc.Inventors: Alfred W. Mak, Mei Chang, Jeong Soo Byun, Hua Chung, Ashok Sinha, Moris Kori