Abstract: A method for the formation of gate in a semiconductor device is disclosed. The method for the formation of gate in a semiconductor device, comprising the steps of: forming amorphous silicon and polysilicon over a gate insulating film atop a semiconductor substrate, in due order; implanting impurity ions into the polysilicon and carrying out heat treatment; and forming a layer of a refractory metal over the silicon and carrying out heat treatment, to form polycide. Capable of preventing the degradation which is attributed to the penetration of impurities and thermal instability when forming a P.sup.+ polygate, the method contribute to the improvement in electrical properties.

Abstract: A capacitor element includes a pervoskite dielectric film and an electrode having excellent electrical contact characteristic and improved adhesion to an underlying surface. In a method for fabricating the electrode, a group IVB or VB refractory metal transition element is deposited on a silicon substrate or a silicon oxide layer. A group VIII near noble metal transition element is then deposited on the group IVB or VB refractory metal layer. The substrate and deposited layers is then subjected to a heat treatment in an ammonia ambient to form a refractory metal nitride layer between the refractory metal and near noble metal layers. In addition, if the refractory metal is deposited on a silicon substrate, a silicide layer is formed between the refractory metal layer and the substrate during heat treatment. If, however, the refractory metal layer is provided on a silicon oxide layer, a refractory metal oxide is formed during the heat treatment.

Abstract: A method for forming a refractory metal nitride film having excellent diffusion barrier properties suitable for a dielectric electrode includes a step of depositing a refractory metal film containing nitrogen on a silicon substrate in a mixed gas atmosphere of Ar and N.sub.2, such that the volumetric content of the nitrogen in the mixed gas does not exceed 20%, and a step of forming a completed refractory metal film by subjecting the refractory metal film to a heat treatment in an N.sub.2 or NH.sub.3 atmosphere. The content of nitrogen in the refractory metal film depends on the content of nitrogen in the ambient gas, and the ratio of nitrogen contained in the refractory metal film to the refractory metal does not exceed unity. The refractory metals may be any of the transition metals in Groups IVB, VB, and VIB of the periodic table.

Abstract: A method for forming platinum silicide plugs suitable for use in very large scale integrated semiconductor devices having large aspect ratios. The method includes the steps of: providing a silicon substrate on which a conductive layer is formed; forming an insulating layer on the silicon substrate and the conductive layer; patterning the insulating layer to form a contact hole on the conductive layer; exposing the conductive layer to air to thereby form a thin native oxide layer on the conductive layer; forming a blanket polysilicon film on the entire resulting structure thick enough to completely fill the contact hole; etching back the blanket polysilicon film to expose the insulating layer, thereby forming a silicon plug in the contact hole; forming a platinum layer on the silicon plug and the insulating layer; performing heat treatment to thereby convert the silicon plug to a platinum silicide plug; and thereafter removing the remaining platinum layer.