Patents by Inventor Jeong-Sun Moon
Jeong-Sun Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240138721Abstract: An apparatus for estimating a concentration of a component includes a sensor including a plurality of light sources having different central wavelengths and at least one detector configured to detect light, and a processor configured to determine a first reflectance of skin using a first light source of the plurality of light sources, set an operating condition of the sensor based on the determined first reflectance, drive the plurality of light sources according to the operating condition, and estimate a concentration of an analyte component based on a plurality of light quantities detected from skin by the at least one detector.Type: ApplicationFiled: February 22, 2023Publication date: May 2, 2024Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kun Sun EOM, JIN YOUNG PARK, MYOUNG HOON JUNG, YOON JAE KIM, HYUN SEOK MOON, JEONG EUN HWANG
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Patent number: 11971348Abstract: An electronic device may include an optical sensor configured to emit a reference light to a reference object and detect the reference light reflected from the reference object during calibration, and emit a measurement light to a target object and detect the measurement light reflected from the target object during a measurement; and a processor configured to perform the calibration of the optical sensor while the electronic device is disposed to oppose or in contact with the reference object by controlling the optical sensor to emit and detect the reference light, and estimate bio-information based on a light quantity of the measurement light that is reflected from the target object by the optical sensor, and a light quantity of the reference light reflected from the reference object.Type: GrantFiled: March 23, 2022Date of Patent: April 30, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun Seok Moon, Yoon Jae Kim, Jin Young Park, Kun Sun Eom, Myoung Hoon Jung, Jeong Eun Hwang
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Publication number: 20240136429Abstract: A transition metal dichalcogenide (TMD) transistor includes a substrate, an n-type two-dimensional (2D) TMD layer, a metal source electrode, a metal drain electrode, and a gate dielectric. The substrate has a top portion that is an insulating layer, and the n-type 2D TMD layer is on the insulating layer. The metal source electrode, the metal drain electrode, and the gate dielectric are on the n-type 2D TMD layer. The metal gate electrode is on top of the gate dielectric and is between the metal source electrode and the metal drain electrode.Type: ApplicationFiled: October 18, 2022Publication date: April 25, 2024Applicant: HRL Laboratories, LLCInventors: Kyung-Ah SON, Jeong-Sun MOON, Hwa Chang SEO
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Patent number: 11953801Abstract: A solid state optical beam steering device including a body of electro-optical material wherein the body of electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein the body has a first face and a second face opposite the first face, a first transparent resistive sheet on the first face of the body of electro optic material, wherein the first transparent resistive sheet has a first side and a second side, and a transparent conductor on the second face of the body of electro optic material, wherein the transparent conductor is coupled to the second side of the first transparent resistive sheet.Type: GrantFiled: March 19, 2021Date of Patent: April 9, 2024Assignee: HRL LABORATORIES, LLCInventors: Richard Kremer, Kyung-Ah Son, Jeong-Sun Moon, Ryan Quarfoth
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Publication number: 20240090771Abstract: An apparatus for estimating bio-information includes: a sensor including one or more light sources configured to emit light to an object and a plurality of detectors configured to detect light reflected from the object; and a processor configured to transform a plurality of light quantities obtained from respective detectors of the plurality of detectors to a distance domain, to combine the plurality of transformed light quantities in the distance domain, to correct the combined light quantity based on a reference light quantity for correcting a deviation of a distance between the one or more light sources and the plurality of detectors, and to estimate bio-information based on a light quantity resulting from the correction.Type: ApplicationFiled: February 8, 2023Publication date: March 21, 2024Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Myoung Hoon JUNG, Kun Sun EOM, Jin Young PARK, Yoon Jae KIM, Hyun Seok MOON, Jeong Eun HWANG
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Patent number: 11808937Abstract: A method of providing a spatial light modulator comprising: providing a substrate; providing a first phase change material cell on the substrate, the first phase change material cell comprising: a first electrical heater on the substrate; a first optical reflector layer on the electrical heater; and a first phase change material layer on the optical reflector layer; and providing at least a second phase change material cell on the substrate, the second phase change material cell comprising: a second electrical heater on the substrate; a second optical reflector layer on the second electrical heater; a second phase change material layer on the second optical reflector layer; and providing a light absorber layer between the first phase change material cell and the second phase change material cell.Type: GrantFiled: October 27, 2021Date of Patent: November 7, 2023Assignee: HRL LABORATORIES, LLCInventors: Jeong-Sun Moon, Hwa Chang Seo, Kyung-Ah Son, Kangmu Lee
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Patent number: 11788183Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (?450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.).Type: GrantFiled: March 19, 2021Date of Patent: October 17, 2023Assignee: HRL LABORATORIES, LLCInventors: Kyung-Ah Son, Jeong-Sun Moon, Hwa Chang Seo, Richard M. Kremer, Ryan G. Quarfoth, Jack A. Crowell, Mariano J. Taboada, Joshua M. Doria, Terry B. Welch
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Patent number: 11764271Abstract: A method of fabricating a gate with a mini field plate includes forming a dielectric passivation layer over an epitaxy layer on a substrate, coating the dielectric passivation layer with a first resist layer, etching the first resist layer and the dielectric passivation layer to form a first opening in the dielectric passivation layer, removing the first resist layer; and forming a tri-layer gate having a gate foot in the first opening, the gate foot having a first width, a gate neck extending from the gate foot and extending for a length over the dielectric passivation layer on both sides of the first opening, the gate neck having a second width wider than the first width of the gate foot, and a gate head extending from the gate neck, the gate head having a third width wider than the second width of the gate neck.Type: GrantFiled: March 2, 2022Date of Patent: September 19, 2023Assignee: HRL LABORATORIES, LLCInventors: Joel C. Wong, Jeong-Sun Moon, Robert M. Grabar, Michael T. Antcliffe
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Patent number: 11569367Abstract: A field effect transistor includes a substrate, a passivation layer on the substrate forming a passivated substrate, wherein the passivation layer is inert to XeF2, and a graphene lateral heterostructure field effect transistor (LHFET) on the passivated substrate.Type: GrantFiled: April 27, 2021Date of Patent: January 31, 2023Assignee: HRL LABORATORIES, LLCInventors: Kyung-Ah Son, Jeong-Sun Moon, Hwa Chang Seo
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Publication number: 20220389561Abstract: A process enables growing thick stoichiometric crystalline and preferably IR-transparent optical PCMO material on Si and other substrates. Sputter deposition is carried out in oxygen-free inert gas (e.g., Ar) environment, which helps to prevent decomposition of the PCMO material over the substrate. In the disclosed process, there is no need to add a seed layer prior to PCMO deposition. Moreover, no post-deposition annealing is needed in a high-temperature and high-pressure oxygen furnace, but an anneal provides certain additional benefits in terms of improved transparency at IR wavelengths. Over a long deposition time for a thick PCMO film on the high temperature (?450° C.) substrates, the PCMO deposition is made repeated cycles of deposition of the PCMO material at the high temperature, each deposition cycle being followed by cooling the PCMO-deposited substrate to a substantially lower temperature (<50° C.).Type: ApplicationFiled: August 18, 2022Publication date: December 8, 2022Applicant: HRL Laboratories, LLCInventors: Kyung-Ah SON, Jeong-Sun MOON, Hwa Chang SEO, Richard M. KREMER, Ryan G. QUARFOTH, Jack A. CROWELL, Mariano J. TABOADA, Joshua M. DORIA, Terry B. WELCH
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Patent number: 11493824Abstract: A solid state electrically variable focal length lens includes a plurality of concentric rings of electro-optical material, wherein the electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein each respective concentric ring further includes a transparent resistive sheet on a first face of the respective concentric ring, wherein the transparent resistive sheet extends along the first face, and a first voltage coupled between a first end and a second end of the transparent resistive sheet, wherein the first voltage may be varied to select an optical beam deflection angle.Type: GrantFiled: March 2, 2021Date of Patent: November 8, 2022Assignee: HRL LABORATORIES, LLCInventors: Richard Kremer, Kyung-Ah Son, Jeong-Sun Moon, Ryan G. Quarfoth
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Publication number: 20220308419Abstract: A solid state electrically variable focal length lens includes a plurality of concentric rings of electro-optical material, wherein the electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein each respective concentric ring further includes a transparent resistive sheet on a first face of the respective concentric ring, wherein the transparent resistive sheet extends along the first face, and a first voltage coupled between a first end and a second end of the transparent resistive sheet, wherein the first voltage may be varied to select an optical beam deflection angle.Type: ApplicationFiled: March 2, 2021Publication date: September 29, 2022Applicant: HRL Laboratories, LLCInventors: Richard KREMER, Kyung-Ah SON, Jeong-Sun MOON, Ryan G. QUARFOTH
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Patent number: 11404541Abstract: A HEMT comprising: a substrate; a channel layer coupled to the substrate; a source electrode coupled to the channel layer; a drain electrode coupled to the channel layer; and a gate electrode coupled to the channel layer between the source electrode and the drain electrode; wherein the channel layer comprises: at least a first GaN layer; and a first graded AlGaN layer on the first GaN layer, the Al proportion of the first graded AlGaN layer increasing with the distance from the first GaN layer.Type: GrantFiled: July 11, 2020Date of Patent: August 2, 2022Assignee: HRL LABORATORIES, LLCInventors: Jeong-sun Moon, Fevzi Arkun
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Publication number: 20220190123Abstract: A method of fabricating a gate with a mini field plate includes forming a dielectric passivation layer over an epitaxy layer on a substrate, coating the dielectric passivation layer with a first resist layer, etching the first resist layer and the dielectric passivation layer to form a first opening in the dielectric passivation layer, removing the first resist layer; and forming a tri-layer gate having a gate foot in the first opening, the gate foot having a first width, a gate neck extending from the gate foot and extending for a length over the dielectric passivation layer on both sides of the first opening, the gate neck having a second width wider than the first width of the gate foot, and a gate head extending from the gate neck, the gate head having a third width wider than the second width of the gate neck.Type: ApplicationFiled: March 2, 2022Publication date: June 16, 2022Applicant: HRL Laboratories, LLCInventors: Joel C. WONG, Jeong-Sun MOON, Robert M. GRABAR, Michael T. ANTCLIFFE
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Patent number: 11314109Abstract: A spatial light modulator cell and arrays of spatial light modulator cells are disclosed. The spatial light modulator cells can comprise a phase change material (PCM) having a first side and a second side; an optical reflector configured to reflect an optical beam passing from the first side to the second side; and a PCM heater thermal conductively coupled to the PCM, wherein thermal modulation of the PCM modulates a phase of the PCM which varies light transmission through the PCM. Methods of making spatial light modulator cells and arrays are also disclosed.Type: GrantFiled: October 24, 2019Date of Patent: April 26, 2022Assignee: URL Laboratories, LLCInventors: Jeong-Sun Moon, Adour V. Kabakian, David H. Chow, Richard M. Kremer
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Patent number: 11302786Abstract: A method of fabricating a gate with a mini field plate includes forming a dielectric passivation layer over an epitaxy layer on a substrate, coating the dielectric passivation layer with a first resist layer, etching the first resist layer and the dielectric passivation layer to form a first opening in the dielectric passivation layer, removing the first resist layer, and forming a tri-layer gate having a gate foot in the first opening, a gate neck extending from the gate foot, and a gate head extending from the gate neck. The gate foot has a first width, and the gate neck has a second width that is wider than the first width. The gate neck extends for a length over the dielectric passivation layer on both sides of the first opening. The gate head has a third width wider than the second width of the gate neck.Type: GrantFiled: January 27, 2020Date of Patent: April 12, 2022Assignee: HRL Laboratories LLCInventors: Joel C. Wong, Jeong-Sun Moon, Robert M. Grabar, Michael T. Antcliffe
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Patent number: 11231635Abstract: A vertical directional coupler or switch comprising a lower and an upper waveguide, integrated with an optical phase change material disposed between the lower and upper waveguides to control a directional of optical coupling between the lower and upper waveguides.Type: GrantFiled: November 18, 2020Date of Patent: January 25, 2022Assignee: HRL Laboratories, LLCInventors: Jeong-Sun Moon, Ryan G. Quarfoth, Kangmu Lee
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Patent number: 11222959Abstract: A Field Effect Transistor (FET) device and a method for manufacturing it are disclosed. The FET device contains a graphene layer, a composite gate dielectric layer disposed above the graphene layer, wherein the composite gate layer is passivated with fluorine, and a metal gate disposed above the composite gate dielectric layer. The method disclosed teaches how to manufacture the FET device.Type: GrantFiled: May 20, 2016Date of Patent: January 11, 2022Assignee: HRL Laboratories, LLCInventors: Jeong-Sun Moon, Hwa Chang Seo
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Patent number: 11187891Abstract: A spatial light modulator includes a substrate, a phase change material cell on the substrate, the phase change material cell including an electrical heater on the substrate, an optical reflector layer on the electrical heater, and a phase change material layer on the optical reflector layer.Type: GrantFiled: April 10, 2018Date of Patent: November 30, 2021Assignee: HRL Laboratories, LLCInventors: Jeong-Sun Moon, Hwa Chang Seo, Kyung-Ah Son, Kangmu Lee
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Publication number: 20210364884Abstract: A solid state electrically variable focal length lens includes a plurality of concentric rings of electro-optical material, wherein the electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein each respective concentric ring further includes a transparent resistive sheet on a first face of the respective concentric ring, wherein the transparent resistive sheet extends along the first face, and a first voltage coupled between a first end and a second end of the transparent resistive sheet, wherein the first voltage may be varied to select an optical beam deflection angle.Type: ApplicationFiled: March 2, 2021Publication date: November 25, 2021Applicant: HRL Laboratories, LLCInventors: Richard KREMER, Kyung-Ah SON, Jeong-Sun MOON, Ryan G. QUARFOTH