Abstract: A semiconductor apparatus includes a semiconductor substrate and a semiconductor layer extending along the substrate in a first direction and connecting to the semiconductor substrate, the semiconductor layer having a portion that connects to the semiconductor substrate, and a portion that does not connect to the semiconductor substrate and forms an active region floating over the semiconductor substrate. A word line formed on the active region and extends in a direction perpendicular to the first direction. Junction regions formed in the active region at both sides of the word line; and an air gap formed in a floating region between the semiconductor substrate and the active region.

Abstract: A method of controlling a color-tone density (CTD) of an image forming apparatus including a plurality of developers configured to circularly perform a developing operation. The method includes developing test patches on an OPC sequentially from a developer to be developable preferentially, measuring CTDs of the developed test patches, and controlling a development variable using the measure CTDs.

Abstract: A mobile terminal including a display, and a controller coupled to the display, the controller configured to display information on the display, scroll the displayed information in response to a touch and moving input applied on the display in a direction, and refresh the displayed information if the touch and moving input is released subsequent to the scrolling of the displayed information.

Abstract: A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO2 layer formed on a surface of the damascene pattern and an Al deposit-inhibiting layer formed on a portion of the RuO2 layer in both-side upper portion of the damascene pattern; and a wiring metal layer including Al formed on the diffusion barrier layer by MOCVD method in order to fill the damascene pattern.

Abstract: A mobile terminal including a display unit configured to display information; a touch layer configured to sense a touch input with respect to the display unit; a controller cooperating with the display unit and the touch layer and configured to: sense a touch input onto the display unit after the display unit displays the information, set a region of the display unit that includes a portion corresponding to the sensed touch input, and display on the display unit one or more graphical images corresponding to one or more selectable functions related to one or more contents displayed in the region. Further, the one or more selectable functions are matched to the corresponding one or more graphical images.

Abstract: An image forming apparatus to perform mono printing and color printing having different printing speeds and enhance printing performance includes an image forming unit to perform the color printing and the mono printing, and a control unit to determine whether to change a printing speed by comparing an amount of printing to be processed with a predetermined critical value and, if it is determined to change the printing speed, controlling the image forming unit to perform printing according to the amount of printing to be processed by switching a printing speed from printing at a relatively slow printing speed to printing at a relatively fast printing speed.

Abstract: A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.

Abstract: A mobile terminal including a display unit configured to display information; a touch layer configured to sense a touch input with respect to the display unit; a controller cooperating with the display unit and the touch layer and configured to: sense a touch input onto the display unit after the display unit displays the information, set a region of the display unit that includes a portion corresponding to the sensed touch input, and display on the display unit one or more graphical images corresponding to one or more selectable functions related to one or more contents displayed in the region. Further, the one or more selectable functions are matched to the corresponding one or more graphical images.

Abstract: An electrical conductor having a multilayer diffusion barrier of use in a resultant semiconductor device is presented. The electrical conductor line includes an insulation layer, a diffusion barrier, and a metal line. The insulation layer is formed on a semiconductor substrate and having a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a multi-layered structure made of TaN layer, an MoxOy layer and an Mo layer. The metal line is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Abstract: A method of controlling a mobile terminal and which includes displaying contents on a display screen of the terminal, receiving a signal indicating a portion of the display screen on the mobile terminal has been designated, and executing, via a control unit, a preset function corresponding to an output mode of information contained in the designated portion of the display screen.

Abstract: In a container for a display device, a method of manufacturing the same, and a display device including the container, the container includes an inner layer including carbon of about 0.001 wt % to about 0.1 wt %, silicon of about 0.002 wt % to about 0.05 wt %, manganese of about 0.3 wt % to about 2 wt %, impurities of about 0.08 wt % to about 0.29 wt % based on a total weight of the inner layer and a remainder of iron, a plating layer formed on the inner layer and including electric zinc, and a polymer chrome-free layer formed on the plating layer. Thus, a weight and a thickness of the container may be reduced so that the container may have a light weight and a thin thickness.

Abstract: A search system using images is provided in which when a user does not know a relevant URL or search keyword correctly while surfing the Internet, he or she can search a desired website using only an image. The search system using images according to the present invention comprises an image search server and a user terminal. The image search system comprises: an image conversion section for converting the image included in the website information and the to-be-searched image uploaded by the user into search format images; an image search section for comparing eigen values of both the to-be-searched image uploaded by the user and the search image included in the website information and detecting the website information having a matching eigen value; and a storage section for storing the detected website information, the image included in the website information, and information regarding eigen values.

Abstract: A metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is formed on the semiconductor substrate having the lower metal line, and a metal line forming region exposing at least a portion of the lower metal line is defined in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and includes a WNx layer, a W—N—B ternary layer, and a Ti—N—B ternary layer. A wetting layer is formed on the diffusion barrier and is made of one of a Ti layer or a TiN layer. An upper metal line is formed on the wetting layer to fill the metal line forming region of the insulation layer.

Abstract: A search system using images is provided in which when a user does not know a relevant URL or search keyword correctly while surfing the Internet, he or she can search a desired website using only an image. The search system using images according to the present invention comprises an image search server and a user terminal. The image search system comprises: an image conversion section for converting the image included in the website information and the to-be-searched image uploaded by the user into search format images; an image search section for comparing eigen values of both the to-be-searched image uploaded by the user and the search image included in the website information and detecting the website information having a matching eigen value; and a storage section for storing the detected website information, the image included in the website information, and information regarding eigen values.

Abstract: An electrical conductor having a multilayer diffusion barrier of use in a resultant semiconductor device is presented. The electrical conductor line includes an insulation layer, a diffusion barrier, and a metal line. The insulation layer is formed on a semiconductor substrate and having a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a multi-layered structure made of TaN layer, an MoxOy layer and an Mo layer. The metal line is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Abstract: A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO2 layer formed on a surface of the damascene pattern and an Al deposit-inhibiting layer formed on a portion of the RuO2 layer in both-side upper portion of the damascene pattern; and a wiring metal layer including Al formed on the diffusion barrier layer by MOCVD method in order to fill the damascene pattern.

Abstract: A stereophonic sound reproduction system for compensating a low frequency signal and a method thereof, wherein a mono component signal for compensating low frequency signals which are attenuated when removing a crosstalk of inputted left and right signals inputted is calculated using an average value between the left and right signals, left and right compensation gains which are inversely proportional to an absolute value of a power difference value between the first left and right signals, an amplitude of the calculated mono component signal is controlled according to the left and right compensation gains, and thereafter the mono component signal with the controlled amplitude is added to the left and right signals when removing the crosstalk, whereby the left and right signals from which the crosstalk is removed and to which the mono component signal is added are outputted through left and right speakers to thus prevent distortion of the low frequency signals of original stereophonic sound with maintaining a

Abstract: A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO2 layer formed on a surface of the damascene pattern and an Al deposit-inhibiting layer formed on a portion of the RuO2 layer in both-side upper portion of the damascene pattern; and a wiring metal layer including Al formed on the diffusion barrier layer by MOCVD method in order to fill the damascene pattern.

Abstract: A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.

Abstract: A multi-layer metal wiring of a semiconductor device and a method for forming the same are disclosed. The multi-layer metal wiring of the semiconductor device includes a lower Cu wiring, and an upper Al wiring formed to be contacted with the lower Cu wiring, and a diffusion barrier layer interposed between the lower Cu wiring and the upper Al wiring. The diffusion barrier layer is formed of a W-based layer.