Abstract: Methods of forming metal nitride layers on a substrate include reacting a metal source gas with a nitrogen source gas in a process chamber to form a metal nitride layer on the substrate. The process chamber may have an atmosphere having a pressure of about 0.1 mTorr to about 5 mTorr and a temperature of about 200° C. to about 450° C. A ratio of the flow rate of the metal source gas to the flow rate of the nitrogen source gas may be “1” or more. An interlayer insulating layer may be formed on the semiconductor substrate prior to formation of the metal nitride layer.

Abstract: In a multi-media system for transferring and receiving a transport stream (MPEG2-TS) between a receiver and a recording/reproducing device using the IEEE 1394 interface, a program number command of a selected program is transferred from the receiver to the recording/reproducing device during a recording/playback mode, and the recording and playback are controlled by only one input device for the receiver. Therefore, other devices of the multi-media system can be controlled without extra hardware added to the receiver. Further, an on-screen graphic (OSG) is provided by the receiver, resulting in a consistent OSG.

Abstract: A stereophonic sound reproduction system for compensating a low frequency signal and a method thereof, wherein a mono component signal for compensating low frequency signals which are attenuated when removing a crosstalk of inputted left and right signals inputted is calculated using an average value between the left and right signals, left and right compensation gains which are inversely proportional to an absolute value of a power difference value between the first left and right signals, an amplitude of the calculated mono component signal is controlled according to the left and right compensation gains, and thereafter the mono component signal with the controlled amplitude is added to the left and right signals when removing the crosstalk, whereby the left and right signals from which the crosstalk is removed and to which the mono component signal is added are outputted through left and right speakers to thus prevent distortion of the low frequency signals of original stereophonic sound with maintaining a

Abstract: Methods of forming metal nitride layers on a substrate include reacting a metal source gas with a nitrogen source gas in a process chamber to form a metal nitride layer on the substrate. The process chamber may have an atmosphere having a pressure of about 0.1 mTorr to about 5 mTorr and a temperature of about 200° C. to about 450° C. A ratio of the flow rate of the metal source gas to the flow rate of the nitrogen source gas may be “1” or more. An interlayer insulating layer may be formed on the semiconductor substrate prior to formation of the metal nitride layer.

Abstract: Disclosed is an explosive reactive armor with a momentum transfer mechanism by developing a new protection mechanism in which a momentum transfer mechanism by detonation of a reactive material is integrated with a thickness increase mechanism. In this explosive reactive armor with the momentum transfer mechanism, a flying element always travels with a vertical angle or a slant angle with respect to an ongoing direction of the threat such that a momentum of the flying element is transferred to the threat effectively. As a result of this, shear force is induced over an entire length of the threat and thus the threat can be destroyed. Therefore, a protection effect can always be achieved regardless of an impact angle of the threat. Also, a protection capability can be achieved even in case of a vertical impact which is the most vulnerable case for the existing explosive reactive armor.

Abstract: In a multi-media system for transferring and receiving a transport stream (MPEG2-TS) between a receiver and a recording/reproducing device using the IEEE 1394 interface, a program number command of a selected program is transferred from the receiver to the recording/reproducing device during a recording/playback mode, and the recording and playback are controlled by only one input device for the receiver. Therefore, other devices of the multi-media system can be controlled without extra hardware added to the receiver. Further, an on-screen graphic (OSG) is provided by the receiver, resulting in a consistent OSG.

Abstract: The present invention is directed to a plasma process chamber capable of maintaining a high vacuum in the idle state. The present invention maintains a high vacuum in the idle state and prevents a contamination of the wafer transferred into the process chamber.

Abstract: Provided are a lift pin capable of preventing aluminum from depositing on the lift pin when depositing a metallic layer on a wafer through chemical vapor deposition. a system using the lift pin, and a method of manufacturing the same. The lift pin is made of stainless steel and is oxidized at a predetermined temperature for a predetermined time, such that the lift pin is not deposited with aluminum during a CVD process. Since the CVD vacuum processing chamber utilizes the heater and the lift pin which are made of oxidized SUS material, aluminum does not deposit on the heater and the lift. Therefore, when the lift pin is lowered, the lift pin is not lowered by its own weight, thereby preventing a wafer from being broken. Also, the lift pin is prevented from being ruptured by a robot moving in and out of an opening of the CVD vacuum processing chamber.

Abstract: A method for fabricating cell plugs of a semiconductor device with cell plugs is disclosed, which increases the operation speed of the semiconductor device by reducing the cell plug resistance of the device. The semiconductor device includes a first insulating interlayer on a semiconductor substrate; a first cell plug on the semiconductor substrate through the first insulating interlayer; a second insulating interlayer on the first insulating interlayer; a silicide contact on a predetermined surface of the first cell plug through the first insulating interlayer; and a second cell plug on the silicide contact through the second insulating interlayer.

Abstract: A method for fabricating cell plugs of a semiconductor device with cell plugs is disclosed, which increases the operation speed of the semiconductor device by reducing the cell plug resistance of the device. The semiconductor device includes a first insulating interlayer on a semiconductor substrate; a first cell plug on the semiconductor substrate through the first insulating interlayer; a second insulating interlayer on the first insulating interlayer; a silicide contact on a predetermined surface of the first cell plug through the first insulating interlayer; and a second cell plug on the silicide contact through the second insulating interlayer.

Abstract: A method for fabricating cell plugs of a semiconductor device is disclosed, which increases the operation speed of the semiconductor device by reducing the cell plug resistance of the device. The method includes the steps of forming a first insulating interlayer on a semiconductor substrate, forming a first cell plug on the semiconductor substrate through the first insulating interlayer, forming a second insulating interlayer on the semiconductor substrate, forming a silicide contact on a predetermined surface of the first cell plug through the first insulating interlayer, and forming a second cell plug on the silicide contact through the second insulating interlayer.

Abstract: The present invention relates to a communication network disturbance management method using a top-down method which detects, analyzes and solves a problem by analyzing a quality state in regard to whole communication network lines. The disturbance management is performed in the whole communication network, thereby managing the communication network problems which are not notified by the users. In addition, the communication network problems can be managed before the user's dissatisfaction notification or disturbance generation. Moreover, the disturbance management access method is based on service quality values, and thus it is possible to manage the communication network problem causing reduction of the service quality provided to the users. As a result, the present invention can provide high quality communication service to the users using the communication network.

Abstract: A method for fabricating cell plugs of a semiconductor device is disclosed, which increases the operation speed of the semiconductor device by reducing the cell plug resistance of the device. The method includes the steps of forming a first insulating interlayer on a semiconductor substrate, forming a first cell plug on the semiconductor substrate through the first insulating interlayer, forming a second insulating interlayer on the semiconductor substrate, forming a silicide contact on a predetermined surface of the first cell plug through the first insulating interlayer, and forming a second cell plug on the silicide contact through the second insulating interlayer.

Abstract: A method for manufacturing a semiconductor device including steps of a) preparing an active matrix provided with at least one diffusion region and an insulating layer formed thereon; b) patterning the insulating layer into a predetermined configuration, thereby exposing the diffusion regions; c) forming metal silicide films on the exposed diffusion regions; d) forming a metal layer on the exposed diffusion regions and the insulating layer; e) patterning the metal layer to a preset configuration, thereby obtaining supporting members on the metal silicide films; f) forming bottom electrodes on the supporting members; and g) forming capacitor dielectrics and top electrodes on the bottom electrodes.

Abstract: A multi-media system for transferring a single program transport stream and a method therefor are provided. A receiver is for receiving a transport stream. For the receiver to control recording and reproduction performed by a recording/reproducing device, the receiver selects one program to constitute a single program transport stream and transfers the single program transport stream to the recording/reproducing device. Here, a program number is transferred, by correcting program association table (PAT) information of the transport stream. Accordingly, the recording/reproducing device can recognize the program number within the single program transport stream to be recorded. Therefore, the receiver can perform remote control of the recording/reproducing device without the extra transfer of the program number. Also, the receiver provides an on-screen graphic (OSG) to the recording/reproducing device, resulting in an OSG of consistent appearance.

Abstract: A method for manufacturing a semiconductor device including steps of a) preparing an active matrix provided with at least one diffusion region and an insulating layer formed thereon; b) patterning the insulating layer into a predetermined configuration, thereby exposing the diffusion regions; c) forming metal silicide films on the exposed diffusion regions; d) forming a metal layer on the exposed diffusion regions and the insulating layer; e) patterning the metal layer to a preset configuration, thereby obtaining supporting members on the metal silicide films; f) forming bottom electrodes on the supporting members; and g) forming capacitor dielectrics and top electrodes on the bottom electrodes.

Abstract: In a multi-media system for transferring and receiving a transport stream (MPEG2-TS) between a receiver and a recording/reproducing device using the IEEE 1394 interface, a program number command of a selected program is transferred from the receiver to the recording/reproducing device during a recording/playback mode, and the recording and playback are controlled by only one input device for the receiver. Therefore, other devices of the multi-media system can be controlled without extra hardware added to the receiver. Further, an on-screen graphic (OSG) is provided by the receiver, resulting in a consistent OSG.

Abstract: A manipulator having six degrees of freedom includes a moving plate having six moving points arranged with substantial equal angles therebetween, an upper fixed plate having six upper fixed points arranged with substantial equal angles therebetween, the upper fixed plate being positioned above the moving plate and being spaced apart from the moving plate, a lower fixed plate having six lower fixed points arranged with substantial equal angles therebetween, the lower fixed plate being positioned under the moving plate and being spaced apart from the moving plate.

Abstract: The present invention is to provide a method for making a titanium nitride (TiN) layer, comprising the step of: forming the TiN layer out of a source materials; and exposing the TiN layer using the hydrogen and nitrogen plasma gases. Accordingly, the present invention has an effect that resistivity of the TiN layer decreases by eliminating the impurities therein and by decreasing the porosity thereof, and that the electrical stability of the TiN layer increases.

Abstract: A row address strobe signal input buffer and method for converting an external input row address strobe signal to an internal signal and protecting the internal signal from background noise in the circuit. In the preferred embodiment the invention level-shifts the row address strobe signal to an internal signal of CMOS signal level. It then latches the internal signal to its current state and opens a transmission gate cutting off the internal signal from the external row address strobe signal. This prevents glitches in the internal signal due to noise in the circuit introduced due to the external row address strobe signal being of a TTL level. The gate remains open for a delayed period of time, the delay determined by a delay circuit or by the length of a pulse from a pulse generator. After the delay period, the gate is closed, restoring the signal connection between the external row address signal and the internal signal.