Abstract: An input sensing unit includes a base including light-transmitting areas and non-light transmitting areas. A light absorbing pattern is provided corresponding to the non-light transmitting areas and is configured to absorb incident light. A sensing electrode overlaps the light absorbing pattern. The light absorbing pattern has an aperture for exposing a light-transmitting area of the light-transmitting areas. A boundary of the aperture and an outer boundary of the light-transmitting area are spaced apart from each other. The input sensing unit has improved viewing angle/luminance ratio and improved characteristics of reflective color.

Abstract: The present invention relates to a method of fabricating a black phosphorus thin film and a black phosphorus thin film thereof and, more particularly, to a method of fabricating a black phosphorus ultrathin film by forming the black phosphorous ultrathin film in a chamber by active oxygen and removing accompanying black phosphorus oxide film water. The black phosphorus ultrathin film has a surface that does not substantially have defects and is uniform in a large area, and has a surface roughness property of 1 nm or less, to represent a high application property to an optoelectronic device and a field effect transistor.

Abstract: A photomask is provided. A photomask, comprising: a transparent substrate; and a plurality of filter layers disposed on the transparent substrate, wherein the filter layers include a first filter layer, which selectively transmits first-wavelength light therethrough, and a second filter layer, which selectively transmits second-wavelength light therethrough.

Abstract: Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.

Abstract: The present invention relates to a method of fabricating a black phosphorus thin film and a black phosphorus thin film thereof and, more particularly, to a method of fabricating a black phosphorus ultrathin film by forming the black phosphorous ultrathin film in a chamber by active oxygen and removing accompanying black phosphorus oxide film water. The black phosphorus ultrathin film has a surface that does not substantially have defects and is uniform in a large area, and has a surface roughness property of 1 nm or less, to represent a high application property to an optoelectronic device and a field effect transistor.

Abstract: A positive photosensitive siloxane resin composition includes a) a siloxane copolymer obtained by performing hydrolysis and condensation polymerization of i) at least one reactive silane represented by the following Chemical Formula 1 and ii) at least one 4-functional reactive silane represented by the following Chemical Formula 2 under a catalyst, the copolymer having a polystyrene-converted weight average molecular weight Mw of 1,000 to 20,000, b) a 1,2-quinonediazide compound, and c) a solvent, (R1)nSi(R2)4-n??[Chemical Formula 1] Si(R3)4??[Chemical Formula 2] wherein R1s may each independently be any one of an alkyl group having 1 to 10 carbon atoms and an aryl group having 6 to 15 carbon atoms, R2 may be an alkoxy group having 1 to 4 carbon atoms, phenoxy, or acetoxy, R3s may each independently be any one of an alkoxy group having 1 to 4 carbon atoms, phenoxy, or an acetoxy group, and n may be a natural number of 1 to 3.

Abstract: A photosensitive resin composition, an organic light emitting display device, and method for manufacturing an organic light emitting device, the composition including a photosensitive compound; a solvent; and a silsesquioxane-based copolymer, the silsesquioxane-based copolymer being obtained by copolymerizing a compound represented by the following Chemical Formula 1 with at least one of a compound represented by the following Chemical Formula 2, and a compound represented by the following Chemical Formula 3; R1-R2—Si(R3)3??[Chemical Formula 1] R4—Si(R5)3??[Chemical Formula 2] Si(R6)4.

Abstract: A method of manufacturing a display device, the method including: forming, on a first surface of a substrate, a gate line and a gate electrode; forming a first dielectric layer on the gate line and the gate electrode; forming a data line, a source electrode and a drain electrode on the first dielectric layer; forming a black matrix layer on the first dielectric layer, the data line, the source electrode, and the drain electrode; radiating ultraviolet light on a second surface of the substrate opposing the first surface, the ultraviolet light developing exposed parts of the black matrix layer to form a black matrix pattern; and etching the first dielectric layer using the black matrix pattern as an etching mask to respectively form a first dielectric pattern on the gate line and a gate dielectric pattern on the gate electrode.

Abstract: A photo mask includes a transparent substrate and a mask pattern. The mask pattern is disposed on the transparent substrate. The mask pattern includes a blocking portion for blocking light and a transmitting portion for transmitting the light. The transmitting portion is adjacent to the blocking portion. The blocking portion includes a first blocking layer, a photo guide layer and a second blocking layer. The first blocking layer is disposed on the transparent substrate. The first blocking layer transmits a portion of the light. The first blocking layer includes a plurality of blocking patterns including a first blocking material. The photo guide layer is disposed on the first blocking layer. The photoguide layer guides the transmitted portion of the light to a side surface of the photoguide layer. The second blocking layer reflects the transmitted portion of the light.

Abstract: According to an exemplary embodiment of the present invention, a photomask includes a transparent substrate and a polarizing pattern. A polarizing pattern is disposed on a transparent substrate. The polarizing pattern polarize light.

Abstract: A method for forming a pattern includes forming a photosensitive film by coating a photosensitive resin composition on a substrate, exposing the photosensitive film to light through a mask that includes a light transmission region and a non-light transmission region, coating a developing solution on the photosensitive film, and forming a photosensitive film pattern by baking the photosensitive film, wherein the photosensitive resin composition includes an alkali soluble base resin, a photoacid generator and a photoactive compound.

Abstract: According to an exemplary embodiment of the present invention, a photomask includes a transparent substrate and a polarizing pattern. A polarizing pattern is disposed on a transparent substrate. The polarizing pattern polarize light.

Abstract: A positive photosensitive siloxane resin composition includes a) a siloxane copolymer obtained by performing hydrolysis and condensation polymerization of i) at least one reactive silane represented by the following Chemical Formula 1 and ii) at least one 4-functional reactive silane represented by the following Chemical Formula 2 under a catalyst, the copolymer having a polystyrene-converted weight average molecular weight Mw of 1,000 to 20,000, b) a 1,2-quinonediazide compound, and c) a solvent, (R1)nSi(R2)4-n ??[Chemical Formula 1] Si(R3)4 ??[Chemical Formula 2] wherein R1s may each independently be any one of an alkyl group having 1 to 10 carbon atoms and an aryl group having 6 to 15 carbon atoms, R2 may be an alkoxy group having 1 to 4 carbon atoms, phenoxy, or acetoxy, Ras may each independently be any one of an alkoxy group having 1 to 4 carbon atoms, phenoxy, or an acetoxy group, and n may be a natural number of 1 to 3.

Abstract: A photomask is provided. A photomask, comprising: a transparent substrate; and a plurality of filter layers disposed on the transparent substrate, wherein the filter layers include a first filter layer, which selectively transmits first-wavelength light therethrough, and a second filter layer, which selectively transmits second-wavelength light therethrough.

Abstract: A photo mask includes a transparent substrate and a mask pattern. The mask pattern is disposed on the transparent substrate. The mask pattern includes a blocking portion for blocking light and a transmitting portion for transmitting the light. The transmitting portion is adjacent to the blocking portion. The blocking portion includes a first blocking layer, a photo guide layer and a second blocking layer. The first blocking layer is disposed on the transparent substrate. The first blocking layer transmits a portion of the light. The first blocking layer includes a plurality of blocking patterns including a first blocking material. The photo guide layer is disposed on the first blocking layer. The photoguide layer guides the transmitted portion of the light to a side surface of the photoguide layer. The second blocking layer reflects the transmitted portion of the light.

Abstract: A photoresist composition includes an alkali soluble resin, a photosensitive compound, a first solvent having a boiling point of less than 200° C., and a second solvent having a boiling point of equal to or greater than 200° C.

Abstract: A method of manufacturing a display device, the method including: forming, on a first surface of a substrate, a gate line and a gate electrode; forming a first dielectric layer on the gate line and the gate electrode; forming a data line, a source electrode and a drain electrode on the first dielectric layer; forming a black matrix layer on the first dielectric layer, the data line, the source electrode, and the drain electrode; radiating ultraviolet light on a second surface of the substrate opposing the first surface, the ultraviolet light developing exposed parts of the black matrix layer to form a black matrix pattern; and etching the first dielectric layer using the black matrix pattern as an etching mask to respectively form a first dielectric pattern on the gate line and a gate dielectric pattern on the gate electrode.

Abstract: A pattern mask for patterning a thin film includes a transparent or translucent substrate with a plurality of grooves formed thereon having a pitch of about 4.6 ?m to about 10.8 ?m.

Abstract: A photoresist composition may include a novolac resin, a diazide-based photosensitive compound, a surfactant represented by Chemical Formula 1 below, and a solvent. R1 and R2 may denote a hydrogen atom or an alkyl group, x may be 10-50, and y may be 10-50.

Abstract: A photomask for exposure includes: a transparent substrate; a light blocking pattern layer positioned on the transparent substrate; a first dielectric layer positioned on the light blocking pattern layer and including a dielectric material; and a negative refractive index layer positioned on the first dielectric layer and including a metal. A surface plasmon quasi-bound mode of the photomask for exposure overlaps a wavelength range of the light source of the light exposer which irradiates light to the photomask for exposure.