Abstract: A photomask for exposure includes: a transparent substrate; a light blocking pattern layer positioned on the transparent substrate; a first dielectric layer positioned on the light blocking pattern layer and including a dielectric material; and a negative refractive index layer positioned on the first dielectric layer and including a metal. A surface plasmon quasi-bound mode of the photomask for exposure overlaps a wavelength range of the light source of the light exposer which irradiates light to the photomask for exposure.

Abstract: A display device includes a substrate comprising a display area and a non-display area. A gate line and a data line are disposed on the substrate. A thin film transistor is disposed on the display area and coupled to the gate line and the data line. A pad is disposed in the non-display area. A passivation layer is disposed on the thin film transistor and the pad. A pixel electrode is coupled to the thin film transistor. The passivation layer has a thickness that is smaller in the non-display area than in the display area, and the passivation layer has a thickness of about 0.1 ?m to about 1 ?m in the non-display area.

Abstract: A photoresist composition may include a novolak resin, a diazide-based photo-sensitizer, and a solvent. The novolak resin may be prepared by a condensation reaction of a monomer mixture including a cresol mixture, xylenol, and salicylaldehyde. Methods of manufacturing a display substrate using the photoresist composition are also provided.

Abstract: In a method for manufacturing a display substrate, a thin film transistor is formed on a base substrate. The thin film transistor includes a gate electrode, an active pattern, a source electrode and a drain electrode. A first passivation layer is formed to cover the thin film transistor. A second passivation layer is formed on the first passivation layer. A photoresist pattern is formed to partially expose the second passivation layer. The first passivation layer and the second passivation layer are partially removed to form a contact hole exposing the drain electrode. A pixel electrode layer is formed on the second passivation layer, the drain electrode and the photoresist pattern. A portion of the pixel electrode layer and the second photoresist pattern are removed to form a pixel electrode. The portion of the pixel electrode layer is disposed on a top surface and a sidewall of the photoresist pattern.

Abstract: A method for forming a pattern includes forming a photosensitive film by coating a photosensitive resin composition on a substrate, exposing the photosensitive film to light through a mask that includes a light transmission region and a non-light transmission region, coating a developing solution on the photosensitive film, and forming a photosensitive film pattern by baking the photosensitive film, wherein the photosensitive resin composition includes an alkali soluble base resin, a photoacid generator and a photoactive compound.

Abstract: A mask may include a circuit area and a pixel area. The circuit area includes a circuit pattern. The pixel area includes a pixel pattern which is extended in a length direction and an assist pattern which is at an end portion of the pixel pattern and adjacent to the circuit area.

Abstract: A photoresist composition may include a novolac resin, a diazide-based photosensitive compound, a surfactant represented by Chemical Formula 1 below, and a solvent. R1 and R2 may denote a hydrogen atom or an alkyl group, x may be 10-50, and y may be 10-50.

Abstract: A method for forming a pattern includes forming a photosensitive film by coating a photosensitive resin composition on a substrate, exposing the photosensitive film to light through a mask that includes a light transmission region and a non-light transmission region, coating a developing solution on the photosensitive film, and forming a photosensitive film pattern by baking the photosensitive film, wherein the photosensitive resin composition includes an alkali soluble base resin, a photoacid generator and a photoactive compound.

Abstract: In a method for manufacturing a display substrate, a thin film transistor is formed on a base substrate. The thin film transistor includes a gate electrode, an active pattern, a source electrode and a drain electrode. A first passivation layer is formed to cover the thin film transistor. A second passivation layer is formed on the first passivation layer. A photoresist pattern is formed to partially expose the second passivation layer. The first passivation layer and the second passivation layer are partially removed to form a contact hole exposing the drain electrode. A pixel electrode layer is formed on the second passivation layer, the drain electrode and the photoresist pattern. A portion of the pixel electrode layer and the second photoresist pattern are removed to form a pixel electrode. The portion of the pixel electrode layer is disposed on a top surface and a sidewall of the photoresist pattern.

Abstract: A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer, a mercaptopropionic acid compound and a solvent. The coating layer is exposed to a light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.

Abstract: An optical mask for forming a pattern is provided. The optical mask includes: a substrate including a light blocking pattern formed on portions of the substrate, wherein the light blocking pattern includes a halftone layer and a light blocking layer formed on the halftone layer, and the halftone layer and the light blocking layer overlap such that at least an edge portion of the halftone layer is exposed. A pitch of the light blocking pattern may about 6 ?m, and a transmission ratio of the halftone layer may range from about 10% to about 50%.

Abstract: An optical mask for forming a pattern is provided. The optical mask includes: a substrate including a light blocking pattern formed on portions of the substrate, wherein the light blocking pattern includes a halftone layer and a light blocking layer formed on the halftone layer, and the halftone layer and the light blocking layer overlap such that at least an edge portion of the halftone layer is exposed. A pitch of the light blocking pattern may about 6 ?m, and a transmission ratio of the halftone layer may range from about 10% to about 50%.

Abstract: A method and system provide personalized dietary compliance rate based on health information. The method may include: (a) transmitting health information from a hospital's information system to a service operating server; (b) identifying a disease using the health information by the service operating server; (c) selecting food in a user's terminal and determining the degree of correlation between the disease and nutrients of the selected food; and (d) determining dietary compliance rate based on the degree of correlation and providing the dietary compliance rate and the nutritional information of the food to the user's terminal. Dietary compliance rate can be provided via a mobile device and web, thus remote patient monitoring is possible, and consultation procedures are simplified using system's care information and on-line real-time Q & A. Additionally, due to continuous care, both physical and mental stability can be provided, increasing a patient's confidence.

Abstract: A photomask for exposure includes: a transparent substrate; a light blocking pattern layer positioned on the transparent substrate; a first dielectric layer positioned on the light blocking pattern layer and including a dielectric material; and a negative refractive index layer positioned on the first dielectric layer and including a metal. A surface plasmon quasi-bound mode of the photomask for exposure overlaps a wavelength range of the light source of the light exposer which irradiates light to the photomask for exposure.

Abstract: An optical mask for forming a pattern is provided. The optical mask includes: a substrate including a light blocking pattern formed on portions of the substrate, wherein the light blocking pattern includes a halftone layer and a light blocking layer formed on the halftone layer, and the halftone layer and the light blocking layer overlap such that at least an edge portion of the halftone layer is exposed. A pitch of the light blocking pattern may about 6 ?m, and a transmission ratio of the halftone layer may range from about 10% to about 50%.

Abstract: A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer, a mercaptopropionic acid compound and a solvent. The coating layer is exposed to a light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.

Abstract: A pattern mask for patterning a thin film includes a transparent or translucent substrate with a plurality of grooves formed thereon having a pitch of about 4.6 ?m to about 10.8 ?m.

Abstract: A mask may include a circuit area and a pixel area. The circuit area includes a circuit pattern. The pixel area includes a pixel pattern which is extended in a length direction and an assist pattern which is at an end portion of the pixel pattern and adjacent to the circuit area.

Abstract: A photoresist composition includes from about 20% to about 50% by weight of a polymer, from about 0.5% to about 1.5% by weight of a photo-acid generator, from about 0.01% to about 0.5% by weight of a photo absorber and the remainder includes an organic solvent. Also provided is a method of forming a fine pattern including forming a thin film on a substrate; forming a photoresist pattern by using a photoresist composition that includes from about 20% to about 50% by weight of a polymer, from about 0.5% to about 1.5% by weight of a photo-acid generator, from about 0.01% to about 0.5% by weight of a photo absorber and a remainder comprising an organic solvent; and patterning the thin film by using the photoresist pattern as an etch-stop layer to form a fine pattern.

Abstract: One or more embodiments of the present invention describe a novel use of capsanthin and/or fatty-acyl ester of capsanthin to inhibit both the differentiation of pre-adipocytes to adipocytes and the accumulation of fat in the adipocytes. One or more embodiments of the present invention are based on findings that capsanthin contained in some natural products such as red pepper, paprika, bell pepper, etc. have anti-adipogenic activity by inhibiting both the differentiation of pre-adipocyte into adipocyte and the accumulation of fat in adipocytes, Therefore, this findings provide a functional food and a pharmaceutical composition wherein capsanthins and the extract of any natural products containing the same components are included in the functional food and the pharmaceutical composition, to offer obesity prevention and/or treatment effects.