Abstract: Methods for fabricating glass cores with conductive vias (e.g., TGVs), as well as related devices, are disclosed. Methods described herein are based on fabricating pillars of conductive materials (e.g., metals or metal alloys) on a temporary support, inserting the pillars into corresponding via openings in a glass core, and at least partially filling the remaining space in the openings with a filler material.

Abstract: An apparatus includes a substrate, a cavity within the substrate, and a die within the cavity. The substrate has an exterior surface. The cavity includes a first surface and a second surface opposite the first surface. The die includes a discrete component, a first side, a second side opposite the first side, and conductive features at the first side. In an embodiment, a bond film is between the first surface and the first side. A plurality of conductive vias extend from the exterior surface through the substrate and bond film to the conductive features. In an embodiment, the bond film may be omitted. The plurality of conductive vias extend from the exterior surface through the substrate. The conductive features of the die are coupled with the conductive vias by solder features, and the second side of the die is spaced away from the second surface.

Abstract: An apparatus is provided which comprises: a substrate core comprising a first core layer bonded with a second core layer, one or more redistribution layers on a first substrate core surface, one or more conductive contacts on a second substrate core surface opposite the first substrate core surface, one or more vias through the substrate core, a first circuit component embedded entirely within a cavity in the first core layer, the first circuit component coupled with a first redistribution layers surface, wherein the first circuit component and the first core layer have substantially equivalent heights, and wherein the first circuit component comprises a deep trench capacitor, and one or more integrated circuit devices coupled with a second redistribution layers surface opposite the first redistribution layers surface. Other embodiments are also disclosed and claimed.

Abstract: Various techniques for alleviating crack formation and propagation in glass cores of microelectronic assemblies, and related devices and methods, are disclosed. The techniques are based on including fillers into glass cores and/or in layers provided on top and/or bottom of glass cores. The fillers have at least one characteristic indicative of material's resistance to breaking under stress being higher than that of glass, which may provide reinforcement and/or increase stiffness of glass, thereby strengthening glass cores. Examples of such characteristics include material strength, fracture toughness, or elastic modulus.

Abstract: Various techniques for alleviating the negative effects of crack formation and propagation in glass, and related devices and methods, are disclosed. In one aspect, a microelectronic assembly includes a glass core having a structure of a crack-healing material on its edge, where the crack-healing material includes carbon, e.g., as a part of an organic monomer, oligomer, or a polymer, or as a part of a carbide of an inorganic material such as boron, titanium, or silicon. In another aspect, a microelectronic assembly includes a glass core in which particles that include an inorganic crack-healing material are dispersed, where the material includes carbon or boron, and a volume occupied by the particles is between about 5% and about 55% of the volume of the glass core. Formation of a crack in the glass core may activate the crack-healing material, causing it to at least partially fill the crack.

Abstract: Various techniques for alleviating (e.g., mitigating or reducing) stresses between glass core materials and electrically conductive materials deposited in through-glass vias (TGVs) and related devices and methods are disclosed. In one aspect, a microelectronic assembly includes a glass core having a first face and a second face opposite the first face, and a TGV extending through the glass core between the first face and the second face, wherein the TGV includes a conductive material and a buffer layer between the conductive material and the glass core, wherein a CTE of the buffer layer is smaller than a CTE of the conductive material.

Abstract: Disclosed herein are microelectronic assemblies and related devices and methods. In some embodiments, a microelectronic assembly may include a glass layer having a surface; a material on the surface of the glass layer, the material including a polyimide or a dielectric material; a via including a conductive material, wherein the via extends through the glass layer and through the material on the surface of the glass layer, and wherein the via has a first diameter through the material on the surface, a second diameter at the surface of the glass layer, and the first diameter is equal to the second diameter plus 1 micron or minus 1 micron; and a dielectric layer on the material at the surface of the glass layer, the dielectric layer including a conductive pathway electrically coupled to the via.

Abstract: Disclosed herein are microelectronic assemblies and related devices and methods. In some embodiments, a microelectronic assembly may include a glass layer having a surface; a material on the surface of the glass layer, the material including a positive-type photo-imageable dielectric (PID) material; a via including a conductive material, wherein the via extends through the glass layer and through the material on the surface of the glass layer, and wherein the via has a first diameter through the material on the surface, a second diameter at the surface of the glass layer, and the first diameter is equal to the second diameter plus 1 micron or minus 1 micron; and a dielectric layer on the material at the surface of the glass layer, the dielectric layer including a conductive pathway electrically coupled to the via.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface, in a first layer; a redistribution layer (RDL) on the first layer, wherein the RDL includes conductive vias having a greater width towards a first surface of the RDL and a smaller width towards an opposing second surface of the RDL; wherein the first surface of the RDL is electrically coupled to the second surface of the first die by first solder interconnects having a first solder; and a second die in a second layer on the RDL, wherein the second die is electrically coupled to the RDL by second solder interconnects having a second solder, wherein the second solder is different than the first solder.

Abstract: Package substrates with components included in cavities of glass cores are disclosed. An example apparatus includes: a glass layer having an opening between opposing first and second surfaces of the glass layer; an electronic component within the opening; a dielectric material within the opening between the electronic component and a sidewall of the opening; and a through-glass via including a conductive material that extends through the glass layer.

Abstract: Package substrates with components included in cavities of glass cores are disclosed. An example apparatus includes: a glass layer having a first hole and a second hole, the second hole larger than an electronic component disposed therein, a width of the electronic component larger than a width of the first hole. The example apparatus further includes a conductive material that substantially fills the first hole; and a dielectric material that substantially fills a space within the second hole surrounding the electronic component.

Abstract: Package substrates with components included in cavities of glass cores are disclosed. An example apparatus includes: a glass core having a first through-hole and a second through-hole, the first through-hole spaced apart from and smaller than the second through-hole; and a conductive material within the first through-hole, the conductive material to extend a full length of the first through-hole. The example apparatus further includes a dielectric material within the second through-hole, the dielectric material between an electronic component within the second through-hole and a sidewall of the second through-hole.

Abstract: Package substrates with components included in cavities of glass cores are disclosed. An example apparatus includes: a glass core having a first opening and a second opening spaced apart from the first opening, the second opening having a greater width than the first opening. The example apparatus further includes a conductive material adjacent a first wall of the first opening; and a dielectric material adjacent a second wall of the second opening.

Abstract: Anisotropic conductive connections for interconnect bridges and related methods are disclosed herein. An example a package substrate for an integrated circuit package, the package substrate comprising a first pad disposed at a first end of an interconnect within the package substrate, the first pad disposed in a cavity in the package substrate, an interconnect bridge disposed in the cavity, the interconnect bridge including a second pad, and a third pad, and a layer disposed between the first pad and the second pad, the layer having a first conductivity between the first pad and the second pad, the layer having a second conductivity between the second pad and the third pad, the first conductivity greater than the second conductivity.

Abstract: An apparatus is provided which comprises: a plurality of interconnect layers within a substrate, organic dielectric material over the plurality of interconnect layers, copper pads on a surface of a cavity within the organic dielectric material, an integrated circuit bridge device coupled with the copper pads, wherein a surface of the integrated circuit bridge device is elevated above an opening of the cavity, underfill material between the integrated circuit bridge device and the surface of the cavity, and build-up layers formed over the organic dielectric material around the integrated circuit bridge device. Other embodiments are also disclosed and claimed.

Abstract: DEEP CAVITY ARRANGEMENTS ON INTEGRATED CIRCUIT PACKAGING An electronic package, comprises a substrate core; dielectric material of one or more dielectric material layers over the substrate core, and having a plurality of metallization layers comprising an upper-most metallization layer; and an integrated circuit (IC) die embedded within the dielectric material and below the upper-most metallization layer. The package also has a metallization pattern within the dielectric material and below the IC die; and a gap within the dielectric material and extending around the metallization pattern.

Abstract: An electronic package comprises a substrate core; one or more dielectric material layers over the substrate core and having a lower dielectric material layer, and a plurality of metallization layers comprising an upper-most metallization layer; an integrated circuit (IC) die embedded within the dielectric material and below the upper-most metallization layer; and at least one conductive feature below and coupled to the IC die. A downwardly facing surface of the conductive feature is located on the lower dielectric material layer and defines a horizontal plane at a junction between the conductive feature and the lower dielectric material layer. The lower dielectric material layer has an upper facing surface facing in a direction of the IC die adjacent the conductive feature that is vertically offset from the horizontal plane.

Abstract: Various techniques for edge stress reduction in glass cores and related devices and methods are disclosed. In one example, a microelectronic assembly includes a glass core having a bottom surface, a top surface opposite the bottom surface, and one or more sidewalls extending between the bottom surface and the top surface, and further includes a panel of an organic material, wherein the glass core is embedded within the panel. In another example, a microelectronic assembly includes a glass core as in the first example, where an angle between a portion of an individual sidewall and one of the bottom surface or the top surface is greater than 90 degrees. In yet another example, a microelectronic assembly includes a glass core as in the first example, and further includes a pattern of a material on one of the one or more sidewalls.

Abstract: An IC die package includes first and second IC die on a first surface of a glass layer, a bridge under the first and second IC die within an opening in the glass layer, and first and second package conductive features on a second surface of the glass layer opposite the first side. First interconnects comprising solder couple the bridge with the first and second IC die. Second interconnects excluding solder couple the first and second IC die with vias extending through the glass layer to the first package conductive features. Third interconnects excluding solder couple the bridge with the second package conductive features. The bridge couples the first and second IC die with each other, and the first and second IC die with the second package conductive features. A pitch of conductive features in the first interconnects is less than a pitch of conductive features in the second interconnects.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first layer including first dies in a first insulating material; a second layer on the first layer, the second layer including second dies and third dies in a second insulating material, the second dies having a first thickness, the third dies having a second thickness different than the first thickness, and the second dies and the third dies having a surface, wherein the surfaces of the second and third dies have a combined surface area between 3,000 square millimeters (mm2) and 9,000 mm2; and a redistribution layer (RDL) between the first layer and the second layer, the RDL including conductive pathways through the RDL, wherein the first dies are electrically coupled to the second dies and the third dies by the conductive pathways through the RDL and by interconnects.