Abstract: Disclosed herein are microelectronic assemblies and related devices and methods. In some embodiments, a microelectronic assembly may include a glass layer having a surface, the glass layer including conductive through-glass vias (TGVs); a dielectric layer at the surface of the glass layer, the dielectric layer including conductive pathways; and interconnects between the surface of the glass layer and the dielectric layer, wherein individual interconnects electrically couple individual TGVs to individual conductive pathways. In some embodiments, the interconnects include solder or liquid metal ink. In some embodiments, the interconnects include metal-metal bonds and dielectric-dielectric bonds.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first layer having first dies in a first insulating material; a second layer on the first layer, the second layer including second dies having a first thickness and third dies having a second thickness different than the first thickness, the second dies and the third dies in a second insulating material, wherein the second dies and third dies have a first surface and an opposing second surface, and wherein the first surfaces of the second and third dies have a combined surface area between 3,000 square millimeters (mm2) and 9,000 mm2; and a redistribution layer (RDL) between the first layer and the second layer, the RDL including conductive pathways, wherein the first dies are electrically coupled to the second dies and the third dies by the conductive pathways and by interconnects.

Abstract: Glass cores including protruding through glass vias and related methods are disclosed herein. An example substrate disclosed herein includes a glass core including a surface and a copper through glass via (TGV) extending through the glass core, the TGV including a protrusion extending from the surface.

Abstract: A microelectronic assembly includes a bridge die embedded in a substrate. The substrate includes a doped dielectric material in a layer or region directly below the bridge die, and in a layer near an upper face of the bridge die. A cavity is formed in the upper layer of the doped dielectric material for embedding the bridge die, exposing the lower layer of the doped dielectric material. After cavity formation, a selective metallization of the lower and upper layers of the doped dielectric material is performed, providing well-aligned metal layers in the region of the bridge die and the region around the bridge die.

Abstract: A microelectronic assembly includes an embedded bridge die and a glass structure, such as glass patch, under the bridge die. The bridge die and the glass structure are embedded in a substrate. The assembly may further include two or more dies arranged over the substrate and coupled to the bridge die. The glass structure may include through-glass vias, and vias in the substrate below the glass structure are self-aligned to the through-glass vias. The glass structure may include an embedded passive device, such as an embedded inductor or capacitor.

Abstract: Processes and structures resulting therefrom for the improvement of high speed signaling integrity in electronic substrates of integrated circuit packages, which is achieved with the formation of airgap structures within dielectric material(s) between adjacent conductive routes that transmit/receive electrical signals, wherein the airgap structures decrease the capacitance and/or decrease the insertion losses in the dielectric material used to form the electronic substrates.

Abstract: An electronic substrate may be fabricated having at least two glass layers separated by an etch stop layer, wherein a bridge is embedded within one of the glass layers. The depth of a cavity formed for embedding the bridge is control by the thickness of the glass layer rather than by controlling the etching process used to form the cavity, which allows for greater precision in the fabrication of the electronic substrate. In an embodiment of the present description, an integrated circuit package may be formed with the electronic substrate, wherein at least two integrated circuit devices may be attached to the electronic substrate, such that the bridge provides device-to-device interconnection between the at least two integrated circuit devices. In a further embodiment, the integrated circuit package may be electrically attached to an electronic board.

Abstract: Embodiments of a microelectronic assembly comprise: a package substrate having a blind cavity between a first surface and a second opposing surface; a bridge die in the blind cavity, the blind cavity being open towards the first surface; and a plurality of integrated circuit (IC) dies coupled to the first surface and to the bridge die. The blind cavity has a floor and a plurality of sidewalls, at least one sidewall is at an obtuse angle to the floor, and the at least one sidewall is patterned with conductive traces.

Abstract: Embodiments of a semiconductor die comprise: a first bond-pad on a first surface to couple to a package substrate, a second bond-pad on a second surface, the second surface being opposite to the first surface, a hole through the semiconductor die, a conductive pillar within the hole separated from sidewalls of the hole by an air gap, the conductive pillar coupled to the first bond-pad and the second bond-pad, and pathways conductively coupling at least two integrated circuit (IC) dies proximate to the second surface.

Abstract: An electronic substrate may be fabricated having a dielectric material, metal pads embedded in the dielectric material with co-planar surfaces spaced less than one tenth millimeter from each other, and a metal trace embedded in the dielectric material and attached between the metal pads, wherein a surface of the metal trace is non-co-planar with the co-planar surfaces of the metal pads at a height of less than one millimeter, and wherein sides of the metal trace are angled relative to the co-planar surfaces of the metal pads. In an embodiment of the present description, an embedded angled inductor may be formed that includes the metal trace. In an embodiment, an integrated circuit package may be formed with the electronic substrate, wherein at least one integrated circuit devices may be attached to the electronic substrate. Other embodiments are disclosed and claimed.

Abstract: Methods and apparatus for edge protected glass cores are disclosed herein. An example package substrate includes a first glass layer including a first surface, a second surface opposite the first surface, and first lateral surfaces extending between the first and second surfaces, the first glass layer having a first via extending between the first surface and the second surface; and a dielectric material in contact with the first surface of the first glass layer and in contact with the first lateral surfaces of the first glass layer.

Abstract: An integrated circuit device, comprising a substrate comprising a dielectric material and a conductor on or within the dielectric material of the substrate. The conductor comprises a first portion comprising a first sloped sidewall, wherein a first base width of the first portion is greater than a first top width of the first portion. The conductor also comprises a second portion over the first portion, the second portion comprising a second sloped sidewall, wherein a second base width of the upper portion is greater than both a second top width of the second portion and the first top width of the first portion.

Abstract: Glass cores including multiple layers and related methods are disclosed. An apparatus disclosed herein includes a printed circuit board and an integrated circuit package coupled to the printed circuit board, the integrated circuit package including a die and a glass core including a first layer having a first coefficient of thermal expansion and a second layer having a second coefficient of thermal expansion different than the first coefficient of thermal expansion.

Abstract: Disclosed herein are antenna units, microelectronic assemblies, and communication devices that may enable RF chip-to-chip communications in a compact form factor. An example microelectronic assembly may include a microelectronic component (e.g., a package substrate, a circuit board, and interposer, or a die) and an antenna unit that may be separately fabricated and integrated in a recess in the microelectronic component, enabling increased degrees of design freedom and improved yield. An example antenna unit may include a glass core having a first face and an opposing second face, a tapered opening extending between the first face and the second face of the glass core, and a layer of an electrically conductive material on sidewalls of the opening, where the opening in the glass core lined with the layer of the electrically conductive material forms a horn antenna integrated in the glass core.

Abstract: Disaggregated package substrates with glass cores are disclosed. An example package substrate includes a glass core having a first side and a second side opposite the first side. The example package substrate further includes a first block of redistribution layers on the first side of the glass core. The example package substrate also includes a second block of redistribution layers on the first side of the glass core. The first block is distinct from the second block.

Abstract: Methods and apparatus to reduce delamination in hybrid cores are disclosed. An example hybrid core of an integrated circuit (IC) package comprises a frame, and a glass panel including a top surface, an edge adjacent the frame, and a tapered surface extending between the edge and the top surface.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a photonic integrated circuit (PIC) having a first surface having a channel and a first magnetic material; a fiber connector including a second surface with a second magnetic material; and a fiber physically coupled to the second surface of the fiber connector by an adhesive material; wherein the first surface of the PIC is coupled to the second surface of the fiber connector by the first and second magnetic materials with the fiber positioned in the channel.

Abstract: An integrated circuit package comprising an integral structural member embedded within dielectric material and at least partially surrounding a keep-out zone of a co-planar package metallization layer. The integral structural member may increase stiffness of the package without increasing the package z-height. The structural member may comprise a plurality of intersecting elements. Individual structural elements may comprise conductive vias that are non-orthogonal to a plane of the package. An angle of intersection and thickness of the structural elements may be varied to impart more or less local or global rigidity to a package according to a particular package application. Intersecting openings may be patterned in a mask material by exposing a photosensitive material through a half-penta prism. Structural material may be plated or otherwise deposited into the intersecting openings.

Abstract: The present disclosure is directed to a planarization tool having at least one module with a target holder for supporting a target with a metal layer, at least one of a plurality of etch inhibitor dispensers for discharging an etch inhibitor toward the target, and a plurality of nozzles for discharging a chemical etchant at an angle towards the target to perform selective removal of the metal layer for planarization of the target. In an aspect, the plurality of etch inhibitor dispensers and the plurality of nozzles may be combined as a single unit to discharge the chemical etchant and the etch inhibitor together. In another aspect, the plurality of etch inhibitor dispensers and the plurality of nozzles may be configured in a single module or separate modules.

Abstract: An integrated circuit (IC) package substrate, comprising a metallization level within a dielectric material. The metallization level comprises a plurality of conductive features, each having a top surface and a sidewall surface. The top surface of a first conductive feature of the plurality of conductive features has a first average surface roughness, and the sidewall surface of a second conductive feature of the plurality of conductive features has a second average surface roughness that is less than the first average surface roughness.