Abstract: An image sensor includes a substrate, dual-waveband photosensitive devices, at least one infrared photosensitive device, a transparent dielectric layer, at least one infrared band-pass filter, a color filter layer and a micro-lens layer. The dual-waveband photosensitive devices are disposed in the substrate, and each dual-waveband photosensitive device is configured to sense an infrared light and one visible light. The infrared photosensitive device is disposed in the substrate, in which the dual-waveband photosensitive devices and the infrared photosensitive device are arranged in an array. The transparent dielectric layer is disposed over the dual-waveband photosensitive devices and the infrared photosensitive device. The infrared band-pass filter is disposed in the transparent dielectric layer and corresponds to the infrared photosensitive device. The color filter layer is disposed to cover the transparent dielectric layer and the infrared band-pass filter.

Abstract: Among other things, one or more image sensors and techniques for forming image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises an oxide grid comprising a first oxide grid portion and a second oxide grid portion. A metal grid is formed between the first oxide grid portion and the second oxide grid portion. The oxide grid and the metal grid define a filler grid. The filler grid comprises a filler grid portion, such as a color filter, that allows light to propagate through the filler grid portion to an underlying photodiode. The oxide grid and the metal grid confine or channel the light within the filler grid portion. The oxide grid and the metal grid are formed such that the filler grid provides a relatively shorter propagation path for the light, which improves light detection performance of the image sensor.

Abstract: A complementary metal oxide semiconductor (CMOS) image sensor and a method for fabricating the same are provided. An example CMOS image sensor includes first active regions of a semiconductor substrate, where the first active regions are arranged in rows or columns. Photosensitive regions are formed in the first active regions. The CMOS image sensor also includes second active regions of the semiconductor substrate that are interposed between the first active regions. Each of the second active regions includes a device isolation region formed by doping the semiconductor substrate with impurities. Each of the second active regions also includes a channel region of a field effect transistor (FET) that is formed within the device isolation region and is configured to connect source and drain regions of the FET. At least one control gate is formed over each of the second active regions.

Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor with silicon and silicon germanium is provided. A silicon germanium layer abuts a silicon layer. A photodetector is arranged in the silicon germanium layer. A transistor is arranged on the silicon layer with a source/drain region that is buried in a surface of the silicon layer and that is electrically coupled to the photodetector. A method for manufacturing the CMOS image sensor is also provided.

Abstract: A circuit includes a signal line and a pixel unit cell. The pixel unit cell includes one or more light sensing elements, a conversion circuit, and a selection switch between the conversion circuit and the signal line. In the pixel unit cell, the conversion circuit is configured to convert charge carriers from the one or more light sensing elements to a voltage signal at an output node of the conversion circuit.

Abstract: Semiconductor devices, image sensors, and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a high dielectric constant (k) insulating material disposed over a workpiece, the high k insulating material having a dielectric constant of greater than about 3.9. A barrier layer is disposed over the high k insulating material. A buffer oxide layer including a porous oxide film is disposed between the high k insulating material and the barrier layer. The porous oxide film has a first porosity, and the barrier layer or the high k insulating material has a second porosity. The first porosity is greater than the second porosity.

Abstract: A method for manufacturing a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor with a vertical transfer gate structure for improved quantum efficiency (QE) and global shutter efficiency (GSE) is provided. A sacrificial dielectric layer is formed over a semiconductor region. A first etch is performed into the sacrificial dielectric layer to form an opening exposing a photodetector in the semiconductor region. A semiconductor column is formed in the opening. A floating diffusion region (FDR) is formed over the semiconductor column and the sacrificial dielectric layer. A second etch is performed into the sacrificial dielectric layer to remove the sacrificial dielectric layer, and to form a lateral recess between the FDR and the photodetector. A gate is formed filling the lateral recess and laterally spaced from the semiconductor column by a gate dielectric layer. The BSI CMOS image sensor resulting from the method is also provided.

Abstract: A pixel sensor device is disclosed. The device includes a shallow trench isolation structure, a well region and a backside isolation structure. The well region and diode region is adjacent to the shallow trench isolation structure. The backside isolation structure is self-aligned with and arranged over the shallow trench isolation structure. The backside isolation structure is adjacent to the diode region.

Abstract: Semiconductor devices and methods of forming semiconductor devices are disclosed. In some embodiments, a first trench and a second trench are formed in a substrate, and dopants of a first conductivity type are implanted along sidewalls and a bottom of the first trench and the second trench. The first and second trenches are filled with an insulating material, and a gate dielectric and a gate electrode over the substrate, the gate dielectric and the gate electrode extending over the first trench and the second trench. Source/drain regions are formed in the substrate on opposing sides of the gate dielectric and the gate electrode.

Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.

Abstract: A pixel sensor device is disclosed. The device includes a shallow trench isolation structure, a well region and a backside isolation structure. The well region and diode region is adjacent to the shallow trench isolation structure. The backside isolation structure is self-aligned with and arranged over the shallow trench isolation structure. The backside isolation structure is adjacent to the diode region. An immersion lithographic arrangement is disclosed that compensates for immersion tool drift.

Abstract: Presented herein is a device including an image sensor having a plurality of pixels disposed in a substrate and configured to sense light through a back side of the substrate and an RDL disposed on a front side of the substrate and having a plurality of conductive elements disposed in one or more dielectric layers. A sensor shield is disposed over the back side of the substrate and extending over the image sensor. At least one via contacts the sensor shield and extends from the sensor shield through at least a portion of the RDL and contacts at least one of the plurality of conductive elements.

Abstract: Methods of forming semiconductor devices are disclosed. In some embodiments, a first trench and a second trench are formed in a substrate, and dopants of a first conductivity type are implanted along sidewalls and a bottom of the first trench and the second trench. The first and second trenches are filled with an insulating material, and a gate dielectric and a gate electrode over the substrate, the gate dielectric and the gate electrode extending over the first trench and the second trench. Source/drain regions are formed in the substrate on opposing sides of the gate dielectric and the gate electrode.

Abstract: Various structures of image sensors are disclosed, as well as methods of forming the image sensors. According to an embodiment, a structure comprises a substrate comprising photo diodes, an oxide layer on the substrate, recesses in the oxide layer and corresponding to the photo diodes, a reflective guide material on a sidewall of each of the recesses, and color filters each being disposed in a respective one of the recesses. The oxide layer and the reflective guide material form a grid among the color filters, and at least a portion of the oxide layer and a portion of the reflective guide material are disposed between neighboring color filters.

Abstract: A circuit includes a signal line and a pixel unit cell. The pixel unit cell includes one or more light sensing elements, a conversion circuit, and a selection switch between the conversion circuit and the signal line. In the pixel unit cell, the conversion circuit is configured to convert charge carriers from the one or more light sensing elements to a voltage signal at an output node of the conversion circuit.

Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor with silicon and silicon germanium is provided. A silicon germanium layer abuts a silicon layer. A photodetector is arranged in the silicon germanium layer. A transistor is arranged on the silicon layer with a source/drain region that is buried in a surface of the silicon layer and that is electrically coupled to the photodetector. A method for manufacturing the CMOS image sensor is also provided.

Abstract: The present disclosure relates to a CMOS image sensor having a doped region, arranged between deep trench isolation structures and an image sensing element, and an associated method of formation. In some embodiments, the CMOS image sensor has a pixel region disposed within a semiconductor substrate. The pixel region has an image sensing element configured to convert radiation into an electric signal. A plurality of back-side deep trench isolation (BDTI) structures extend into the semiconductor substrate on opposing sides of the pixel region. A doped region is laterally arranged between the BDTI structures and separates the image sensing element from the BDTI structures and the back-side of the semiconductor substrate. Separating the image sensing element from the BDTI structures prevents the image sensing element from interacting with interface defects near edges of the BDTI structures, and thereby reduces dark current and white pixel number.

Abstract: Presented herein is a device comprising an image sensor having a plurality of pixels disposed in a substrate and configured to sense light through a back side of the substrate and an RDL disposed on a front side of the substrate and having a plurality of conductive elements disposed in one or more dielectric layers. A sensor shield is disposed over the back side of the substrate and extending over the image sensor. At least one via contacts the sensor shield and extends from the sensor shield through at least a portion of the RDL and contacts at least one of the plurality of conductive elements.

Abstract: A pixel sensor device is disclosed. The device includes a shallow trench isolation structure, a well region and a backside isolation structure. The well region and diode region is adjacent to the shallow trench isolation structure. The backside isolation structure is self-aligned with and arranged over the shallow trench isolation structure. The backside isolation structure is adjacent to the diode region. An immersion lithographic arrangement is disclosed that compensates for immersion tool drift.

Abstract: A method for manufacturing a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor with a vertical transfer gate structure for improved quantum efficiency (QE) and global shutter efficiency (GSE) is provided. A sacrificial dielectric layer is formed over a semiconductor region. A first etch is performed into the sacrificial dielectric layer to form an opening exposing a photodetector in the semiconductor region. A semiconductor column is formed in the opening. A floating diffusion region (FDR) is formed over the semiconductor column and the sacrificial dielectric layer. A second etch is performed into the sacrificial dielectric layer to remove the sacrificial dielectric layer, and to form a lateral recess between the FDR and the photodetector. A gate is formed filling the lateral recess and laterally spaced from the semiconductor column by a gate dielectric layer. The BSI CMOS image sensor resulting from the method is also provided.