Patents by Inventor Ji Feng

Ji Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230263073
    Abstract: A magnetic memory includes a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.
    Type: Application
    Filed: April 27, 2023
    Publication date: August 17, 2023
    Inventors: Ji-Feng YING, Jhong-Sheng WANG, Tsann LIN
  • Patent number: 11727974
    Abstract: A method of manufacturing an array of magnetic random access memory cells includes writing to a magnetic random access memory cell. The writing to a memory cell includes determining an optimum write current for the array of memory cells, and applying the optimum write current to a first memory cell in the array. A first read current is applied to the first memory cell to determine whether a magnetic orientation of the first memory cell has changed in response to applying the optimum write current. A second write current is applied to the first memory cell when the magnetic orientation of the first memory cell has not changed. The second write current is different from the optimum write current. A second read current is applied to the first memory cell to determine whether the magnetic orientation of the first memory cell changed in response to applying the second write current.
    Type: Grant
    Filed: January 31, 2022
    Date of Patent: August 15, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ji-Feng Ying, Jhong-Sheng Wang, Baohua Niu
  • Patent number: 11729182
    Abstract: Predictive rendering (also referred to herein as speculative rendering) is disclosed. The predictive rendering is performed by an endpoint browser in response to a user input made by a user. The predictive rendering is verified using a surrogate browser that is executed on a remote server. The verification can be performed asynchronously.
    Type: Grant
    Filed: August 24, 2022
    Date of Patent: August 15, 2023
    Assignee: Menlo Security, Inc.
    Inventors: Ji Feng, Gautam Altekar, Yang Yu
  • Publication number: 20230175653
    Abstract: An LED tube lamp includes a first and second members and a connection member. Each of the first and second members includes lighting part and an end part. Each lighting part includes LED light strip. The connection member includes electrical connection portions and joining portions for the first and second members. The connection member connects the first member with the second member by the joining portions and the electrical connection portions and makes the first member substantially coaxial to the second member.
    Type: Application
    Filed: July 22, 2022
    Publication date: June 8, 2023
    Inventors: Guang-Dong Wang, Ji-Feng Xu, Ming-Bin Wang, Zi-Xiang Zou, Dong-Mei Zhang
  • Patent number: 11672185
    Abstract: A magnetic memory includes a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.
    Type: Grant
    Filed: November 1, 2021
    Date of Patent: June 6, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ji-Feng Ying, Jhong-Sheng Wang, Tsann Lin
  • Patent number: 11669359
    Abstract: A server-based desktop-virtual machines architecture may be extended to a client machine. In one embodiment, a user desktop is remotely accessed from a client system. The remote desktop is generated by a first virtual machine running on a server system, which may comprise one or more server computers. During execution of the first virtual machine, writes to a corresponding virtual disk are directed to a delta disk file or redo log. A copy of the virtual disk is created on the client system. When a user decides to “check out” his or her desktop, the first virtual machine is terminated (if it is running) and a copy of the delta disk is created on the client system. Once the delta disk is present on the client system, a second virtual machine can be started on the client system using the virtual disk and delta disk to provide local access to the user's desktop at the client system. This allows the user to then access his or her desktop without being connected to a network.
    Type: Grant
    Filed: December 9, 2020
    Date of Patent: June 6, 2023
    Assignee: VMware, Inc.
    Inventors: Yaron Halperin, Jad Chamcham, Christian Matthew Leroy, Gerald Cheong, Matthew Eccleston, Ji Feng
  • Patent number: 11659718
    Abstract: A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.
    Type: Grant
    Filed: May 10, 2021
    Date of Patent: May 23, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ji-Feng Ying, Duen-Huei Hou
  • Publication number: 20230109928
    Abstract: Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.
    Type: Application
    Filed: December 8, 2022
    Publication date: April 13, 2023
    Inventors: Tsann Lin, Ji-Feng Ying, Chih-Chung Lai
  • Patent number: 11611482
    Abstract: Bandwidth throttling in a browser isolation environment is disclosed. A request is received from a client browser executing on a client device to connect with a remote resource. The browser isolation system provides a surrogate browser to facilitate communications between the client browser and the remote resource. A throttle is applied to a portion of content delivered to the client browser in response to the received request.
    Type: Grant
    Filed: June 11, 2021
    Date of Patent: March 21, 2023
    Assignee: Menlo Security, Inc.
    Inventors: Lionel Litty, Ji Feng, Gautam Altekar, Gary Steven Kratkin
  • Publication number: 20230041844
    Abstract: Predictive rendering (also referred to herein as speculative rendering) is disclosed. The predictive rendering is performed by an endpoint browser in response to a user input made by a user. The predictive rendering is verified using a surrogate browser that is executed on a remote server. The verification can be performed asynchronously.
    Type: Application
    Filed: August 24, 2022
    Publication date: February 9, 2023
    Inventors: Ji Feng, Gautam Altekar, Yang Yu
  • Patent number: 11547560
    Abstract: A method is provided for implanting a valve having at least one valve leaflet within the cardiovascular system of a subject. One step of the method includes preparing a substantially dehydrated bioprosthetic valve and then providing an expandable support member having oppositely disposed first and second ends and a main body portion extending between the ends. Next, the substantially dehydrated bioprosthetic valve is attached to the expandable support member so that the substantially dehydrated bioprosthetic valve is operably secured within the main body portion of the expandable support member. The expandable support member is then crimped into a compressed configuration and placed at a desired location within the cardiovascular system of the subject. Either before or after placement at the desired location, fluid or blood re-hydrates the substantially dehydrated bioprosthetic valve.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: January 10, 2023
    Assignee: THE CLEVELAND CLINIC FOUNDATION
    Inventors: Jose Luis Navia, Ji-Feng Chen
  • Patent number: 11525668
    Abstract: A method of performing metrology analysis of a thin film includes coupling a radiation into an optical element disposed adjacent to a surface of the thin film. The radiation is coupled such that the radiation is totally internally reflected at an interface between the optical element and the thin film. An evanescent radiation generated at the interface penetrates the thin film. The method furthers include analyzing the evanescent radiation scattered by the thin film to obtain properties of the thin film.
    Type: Grant
    Filed: January 4, 2021
    Date of Patent: December 13, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ji-Feng Ying, Baohua Niu, David Hung-I Su
  • Patent number: 11527275
    Abstract: Some embodiments relate to a memory device. The memory device includes a magnetoresistive random-access memory (MRAM) cell comprising a magnetic tunnel junction (MTJ). The MTJ device comprises a stack of layers, comprising a bottom electrode disposed over a substrate. A seed layer disposed over the bottom electrode. A buffer layer is disposed between the bottom electrode and the seed layer. The buffer layer prevents diffusion of a diffusive species from the bottom electrode to the seed layer.
    Type: Grant
    Filed: July 5, 2019
    Date of Patent: December 13, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsann Lin, Ji-Feng Ying, Chih-Chung Lai
  • Patent number: 11489845
    Abstract: Predictive rendering (also referred to herein as speculative rendering) is disclosed. The predictive rendering is performed by an endpoint browser in response to a user input made by a user. The predictive rendering is verified using a surrogate browser that is executed on a remote server. The verification can be performed asynchronously.
    Type: Grant
    Filed: September 24, 2020
    Date of Patent: November 1, 2022
    Assignee: Menlo Security, Inc.
    Inventors: Ji Feng, Gautam Altekar, Yang Yu
  • Publication number: 20220336730
    Abstract: A memory cell of a magnetic random access memory includes multiple layers disposed between a first metal layer and a second metal layer. At least one of the multiple layers include one selected from the group consisting of an iridium layer, a bilayer structure of an iridium layer and an iridium oxide layer, an iridium-titanium nitride layer, a bilayer structure of an iridium layer and a tantalum layer, and a binary alloy layer of iridium and tantalum.
    Type: Application
    Filed: June 27, 2022
    Publication date: October 20, 2022
    Inventors: Baohua NIU, Ji-Feng YING
  • Patent number: 11449648
    Abstract: The present disclosure discloses design and forming method of a channel of flow-type thin wall drip irrigation belt. The method includes the steps of construction of a double-layer asymmetric channel structure, determination of a structure parameter control threshold and optimal value, design of water inlets and water outlets of the double-layer asymmetric channel structure, proposal of a machining method of a molding wheel matching the double-layer asymmetric structure and an optimization method of a flow-type drip irrigation belt molding process, material modification of a flow-type drip irrigation belt and design of a reasonable formulation, realization the stereotype production of the flow-type drip irrigation belt, etc.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: September 20, 2022
    Assignee: CHINA AGRICULTURAL UNIVERSITY
    Inventors: Yunkai Li, Peng Hou, Ji Feng, Zhifu Wang
  • Publication number: 20220287757
    Abstract: Provided is a temperature-controllable cryoablation system, comprising a catheter, a fluid-conveying unit and a control unit, wherein the catheter comprises a central cavity and a balloon located at the distal end of the catheter, and an input channel allowing a freezing fluid to be input into the balloon and an outflow channel allowing the freezing fluid to flow out of the balloon are provided in the central cavity; the fluid-conveying unit supplies the freezing fluid and discharges the freezing fluid; and the control unit controls the fluid-conveying unit so as to control, according to a target temperature value, the temperature of the balloon to be close to the target temperature value.
    Type: Application
    Filed: August 6, 2020
    Publication date: September 15, 2022
    Inventors: Jie Gong, Boyang Han, Yanbin Liu, Ji Feng, Bo Peng, Cuihu Liu, Honggang Wei, Xiaolong Wang
  • Publication number: 20220262671
    Abstract: A transistor structure with an air gap includes a substrate. A transistor is disposed on the substrate. An etching stop layer covers and contacts the transistor and the substrate. A first dielectric layer covers and contacts the etching stop layer. A second dielectric layer covers the first dielectric layer. A trench is disposed on the gate structure and within the first dielectric layer and the second dielectric layer. A width of the trench within the second dielectric layer is smaller than a width of the trench within the first dielectric layer. A filling layer is disposed within the trench and covers the top surface of the second dielectric layer. An air gap is formed within the filling layer.
    Type: Application
    Filed: May 4, 2022
    Publication date: August 18, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yunfei Li, JI FENG, GUOHAI ZHANG, CHING HWA TEY
  • Publication number: 20220216269
    Abstract: A memory device including bit lines, auxiliary lines, selectors, and memory cells is provided. The word lines are intersected with the bit lines. The auxiliary lines are disposed between the word lines and the of bit lines. The selectors are inserted between the bit lines and the auxiliary lines. The memory cells are inserted between the word lines and the auxiliary lines.
    Type: Application
    Filed: March 24, 2022
    Publication date: July 7, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ji-Feng Ying, Jhong-Sheng Wang, Tsann Lin
  • Patent number: 11374169
    Abstract: A memory cell of a magnetic random access memory includes multiple layers disposed between a first metal layer and a second metal layer. At least one of the multiple layers include one selected from the group consisting of an iridium layer, a bilayer structure of an iridium layer and an iridium oxide layer, an iridium-titanium nitride layer, a bilayer structure of an iridium layer and a tantalum layer, and a binary alloy layer of iridium and tantalum.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: June 28, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Baohua Niu, Ji-Feng Ying