Abstract: A light-emitting device according to the present invention comprises: a mounting board; a plurality of light-emitting elements that each include a supporting substrate and a semiconductor structure layer, the supporting substrate being disposed on the mounting board, and the semiconductor structure layer being formed on the supporting substrate and including a light-emitting layer, a wavelength conversion member that covers the plurality of light-emitting elements above the light-emitting elements and converts a wavelength of a light emitted from the light-emitting layer; a translucent member that covers a lower surface of the wavelength conversion member and covers the semiconductor structure layer on the supporting substrate; and a resin member filled between the plurality of light-emitting elements, the resin member being formed of a resin material containing particles having a light reflectivity.

Abstract: A light-emitting device includes a substrate, a frame body, a light-emitting element, a wavelength converter, and a light reflecting portion. The light-emitting element includes a semiconductor light-emitting layer on a support substrate. The wavelength converter is disposed on an upper surface of the light-emitting element. The light reflecting portion covers side surfaces of the light-emitting element and the wavelength converter and is formed of a translucent resin containing light reflective particulate fillers. The light reflecting portion includes a first region extending along an upper surface of the light reflecting portion, a second region that is disposed under the first region and has a content rate of the particulate fillers lower than a content rate of the first region, and a third region that is disposed under the second region and has a content rate of the particulate fillers lower than the content rate of the second region.

Abstract: Provided is a light-emitting device having a plurality of light-emitting elements with high operation stability and light extraction efficiency. The light-emitting device includes: a light-emitting element; a translucent member which is disposed on the light-emitting element and has a columnar first portion having a bottom surface opposed to an upper surface of the light-emitting element, a second portion formed continuously with the first portion on the first portion and narrowed upward, and a columnar third portion formed continuously with the second portion on the second portion; and a reflective member configured to cover the side surfaces of the translucent member. In this light-emitting device, the height of the first portion of the translucent member in a direction perpendicular to the bottom surface thereof is ? or more the height of the translucent member in the direction perpendicular to the bottom surface.

Abstract: Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.

Abstract: A light-emitting device according to the present invention comprises: a mounting board; a plurality of light-emitting elements that each include a supporting substrate and a semiconductor structure layer, the supporting substrate being disposed on the mounting board, and the semiconductor structure layer being formed on the supporting substrate and including a light-emitting layer, a wavelength conversion member that covers the plurality of light-emitting elements above the light-emitting elements and converts a wavelength of a light emitted from the light-emitting layer; a translucent member that covers a lower surface of the wavelength conversion member and covers the semiconductor structure layer on the supporting substrate; and a resin member filled between the plurality of light-emitting elements, the resin member being formed of a resin material containing particles having a light reflectivity.

Abstract: Included is a semiconductor multilayer film in which a non-doped InAlN layer and a GaN layer formed on said InAlN layer and containing a dopant are stacked a plurality of times.

Abstract: A light-emitting element and a light-emitting device having low light loss, high luminance, and high light extraction efficiency are provided. The light-emitting element includes: a semiconductor structure layer having a light-emitting layer; a light-transmitting substrate provided on the semiconductor structure layer; a wavelength conversion layer disposed on the light-transmitting substrate; a light-transmitting covering member configured to cover at least a part of a side surface of the light-transmitting substrate and have transparency to light from the light-emitting layer; and a light-shielding member configured to entirely cover surfaces including a surface of the light-transmitting covering member, and including a side surface of the semiconductor structure layer, a side surface of the light-transmitting substrate, and a side surface of the wavelength conversion layer.

Abstract: Provided is a light-emitting device having a plurality of light-emitting elements with high operation stability and light extraction efficiency. The light-emitting device includes: a light-emitting element; a translucent member which is disposed on the light-emitting element and has a columnar first portion having a bottom surface opposed to an upper surface of the light-emitting element, a second portion formed continuously with the first portion on the first portion and narrowed upward, and a columnar third portion formed continuously with the second portion on the second portion; and a reflective member configured to cover the side surfaces of the translucent member. In this light-emitting device, the height of the first portion of the translucent member in a direction perpendicular to the bottom surface thereof is ? or more the height of the translucent member in the direction perpendicular to the bottom surface.

Abstract: A light-emitting device in which a light-emitting element and a substrate are reliably bonded to each other and which has high operation stability is provided. The light-emitting device includes the substrate, the light-emitting element disposed on the substrate with a bonding layer interposed therebetween, and a resin body configured to surround and cover entire side surfaces of the light-emitting element, and have a bottom surface having any of a curved surface shape and a planar surface shape that faces the substrate and is configured to be distant from the substrate between the resin body and the substrate as a distance from the side surface of the light-emitting element increases.

Abstract: A vertical cavity light-emitting device includes: a semiconductor substrate having a hexagonal crystal structure; a line mask extending linearly along at least one of a [11-20] direction and directions equivalent to the [11-20] direction on a c-plane of the semiconductor substrate; a first reflector provided on an exposed region exposed from the line mask on the c-plane of the semiconductor substrate, the first reflector comprising a high refractive index semiconductor film and a low refractive index semiconductor film having a refractive index smaller than that of the high refractive index semiconductor film, the high refractive index semiconductor film and the low refractive index semiconductor film being alternately layered; a light-emitting structure layer provided on the first reflector; and a second reflector disposed on the light-emitting structure layer so as to be opposed so the first reflector.

Abstract: A light-emitting element and a light-emitting device having low light loss, high luminance, and high light extraction efficiency are provided. The light-emitting element includes: a semiconductor structure layer having a light-emitting layer; a light-transmitting substrate provided on the semiconductor structure layer; a wavelength conversion layer disposed on the light-transmitting substrate; a light-transmitting covering member configured to cover at least a part of a side surface of the light-transmitting substrate and have transparency to light from the light-emitting layer; and a light-shielding member configured to entirely cover surfaces including a surface of the light-transmitting covering member, and including a side surface of the semiconductor structure layer, a side surface of the light-transmitting substrate, and a side surface of the wavelength conversion layer.

Abstract: A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.

Abstract: A light-emitting device in which a light-emitting element and a substrate are reliably bonded to each other and which has high operation stability is provided. The light-emitting device includes the substrate, the light-emitting element disposed on the substrate with a bonding layer interposed therebetween, and a resin body configured to surround and cover entire side surfaces of the light-emitting element, and have a bottom surface having any of a curved surface shape and a planar surface shape that faces the substrate and is configured to be distant from the substrate between the resin body and the substrate as a distance from the side surface of the light-emitting element increases.

Abstract: A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.

Abstract: A vertical cavity light emitting device includes: a first multilayer film reflector; a semiconductor structure layer that is formed on the first multilayer film reflector and includes a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type opposite to the first conductivity type; an insulating current confinement layer formed on the semiconductor layer of the second conductivity type; a through opening formed in the current confinement layer; a transparent electrode for covering the through opening and the current confinement layer, the transparent electrode being in contact with the semiconductor layer of the second conductivity type through the through opening; a second multilayer film reflector formed on the transparent electrode; and a mixed composition layer formed to be in contact with an edge of the through opening and in which the current confinement layer and the transparent electrode are mixed.

Abstract: A vertical cavity light-emitting device includes: a semiconductor substrate having a hexagonal crystal structure; a line mask extending linearly along at least one of a [11-20] direction and directions equivalent to the [11-20] direction on a c-plane of the semiconductor substrate; a first reflector provided on an exposed region exposed from the line mask on the c-plane of the semiconductor substrate, the first reflector comprising a high refractive index semiconductor film and a low refractive index semiconductor film having a refractive index smaller than that of the high refractive index semiconductor film, the high refractive index semiconductor film and the low refractive index semiconductor film being alternately layered; a light-emitting structure layer provided on the first reflector; and a second reflector disposed on the light-emitting structure layer so as to be opposed so the first reflector.

Abstract: A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode.

Abstract: Provided is a surface emitting laser device including a plurality of surface emitting laser elements and capable of significantly reducing the crosstalk of light and the formation of a dark line. The surface emitting laser device includes: a mounting substrate; a surface emitting laser array including a plurality of surface emitting laser elements arranged side by side on the mounting substrate; a plurality of light absorption layers formed on the plurality of surface emitting laser elements, respectively, and each including an opening; and a plurality of wavelength conversion plates formed on the plurality of light absorption layers, respectively, and each including a fluorescent plate and a light reflection film covering a side surface of the fluorescent plate.

Abstract: A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode.

Abstract: A semiconductor light-emitting element includes a multilayer body including a first end surface and a second end surface which are opposed to each other, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are stacked; a pair of recesses that are formed on the second semiconductor layer, separated from the second end surface, and separated from each other in the direction parallel to the first and second end surfaces; a ridge portion that is a protrusion between the pair of recesses and extends along the direction perpendicular to the first and second end surfaces; a band-shaped electrode disposed on the ridge portion; and a light guide layer formed on the second semiconductor layer between the ridge portion and the second end surface and guides light from the light emitting layer.