Patents by Inventor Ji Hao Liang

Ji Hao Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10381804
    Abstract: A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.
    Type: Grant
    Filed: February 1, 2018
    Date of Patent: August 13, 2019
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei Tazawa, Ji-Hao Liang, Seiichiro Kobayashi
  • Publication number: 20190214528
    Abstract: A light-emitting device in which a light-emitting element and a substrate are reliably bonded to each other and which has high operation stability is provided. The light-emitting device includes the substrate, the light-emitting element disposed on the substrate with a bonding layer interposed therebetween, and a resin body configured to surround and cover entire side surfaces of the light-emitting element, and have a bottom surface having any of a curved surface shape and a planar surface shape that faces the substrate and is configured to be distant from the substrate between the resin body and the substrate as a distance from the side surface of the light-emitting element increases.
    Type: Application
    Filed: January 8, 2019
    Publication date: July 11, 2019
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Shunya IDE, Ji-Hao LIANG, Kyotaro KOIKE, Noriko NIHEI
  • Publication number: 20180226771
    Abstract: A vertical-cavity light-emitting element includes: a first reflector; a semiconductor structure layer including a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer that are sequentially provided on the first reflector; a transparent electrode on the third semiconductor layer; and a second reflector on the transparent electrode and interposes the structure layer with the first reflector. The third semiconductor layer has a mesa structure to protrude on the second semiconductor layer and be covered by the transparent electrode. The light emitting element further includes a current confining layer including: an insulating film provided in the second semiconductor layer to surround the mesa structure and be in contact with the transparent electrode, the insulating film being an oxide of the second semiconductor layer; and an insulating layer on the insulating film to surround the mesa structure and define a through opening.
    Type: Application
    Filed: February 1, 2018
    Publication date: August 9, 2018
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG, Seiichiro KOBAYASHI
  • Patent number: 9972972
    Abstract: A vertical cavity light emitting device includes: a first multilayer film reflector; a semiconductor structure layer that is formed on the first multilayer film reflector and includes a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type opposite to the first conductivity type; an insulating current confinement layer formed on the semiconductor layer of the second conductivity type; a through opening formed in the current confinement layer; a transparent electrode for covering the through opening and the current confinement layer, the transparent electrode being in contact with the semiconductor layer of the second conductivity type through the through opening; a second multilayer film reflector formed on the transparent electrode; and a mixed composition layer formed to be in contact with an edge of the through opening and in which the current confinement layer and the transparent electrode are mixed.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: May 15, 2018
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei Tazawa, Ji-Hao Liang, Seiichiro Kobayashi, Masaru Takizawa, Keisuke Nakata
  • Publication number: 20180115140
    Abstract: A vertical cavity light-emitting device includes: a semiconductor substrate having a hexagonal crystal structure; a line mask extending linearly along at least one of a [11-20] direction and directions equivalent to the [11-20] direction on a c-plane of the semiconductor substrate; a first reflector provided on an exposed region exposed from the line mask on the c-plane of the semiconductor substrate, the first reflector comprising a high refractive index semiconductor film and a low refractive index semiconductor film having a refractive index smaller than that of the high refractive index semiconductor film, the high refractive index semiconductor film and the low refractive index semiconductor film being alternately layered; a light-emitting structure layer provided on the first reflector; and a second reflector disposed on the light-emitting structure layer so as to be opposed so the first reflector.
    Type: Application
    Filed: October 20, 2017
    Publication date: April 26, 2018
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG, Seiichiro KOBAYASHI
  • Patent number: 9935427
    Abstract: A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode.
    Type: Grant
    Filed: April 17, 2017
    Date of Patent: April 3, 2018
    Assignee: Stanley Electric Co., Ltd.
    Inventors: Komei Tazawa, Ji-Hao Liang, Seiichiro Kobayashi
  • Publication number: 20170331258
    Abstract: Provided is a surface emitting laser device including a plurality of surface emitting laser elements and capable of significantly reducing the crosstalk of light and the formation of a dark line. The surface emitting laser device includes: a mounting substrate; a surface emitting laser array including a plurality of surface emitting laser elements arranged side by side on the mounting substrate; a plurality of light absorption layers formed on the plurality of surface emitting laser elements, respectively, and each including an opening; and a plurality of wavelength conversion plates formed on the plurality of light absorption layers, respectively, and each including a fluorescent plate and a light reflection film covering a side surface of the fluorescent plate.
    Type: Application
    Filed: May 11, 2017
    Publication date: November 16, 2017
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG
  • Publication number: 20170302057
    Abstract: A vertical cavity light-emitting element includes: a first-conductivity-type semiconductor layer; an active layer; a second-conductivity-type semiconductor layer that are formed in this order on a first reflector; an insulating current confinement layer formed on the second-conductivity-type semiconductor layer; a through opening formed in the current confinement layer; a transparent electrode covering the through opening and the current confinement layer and being in contact with the second-conductivity-type semiconductor layer via the through opening; and a second reflector formed on the transparent electrode.
    Type: Application
    Filed: April 17, 2017
    Publication date: October 19, 2017
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG, Seiichiro KOBAYASHI
  • Patent number: 9787059
    Abstract: A semiconductor light-emitting element includes a multilayer body including a first end surface and a second end surface which are opposed to each other, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are stacked; a pair of recesses that are formed on the second semiconductor layer, separated from the second end surface, and separated from each other in the direction parallel to the first and second end surfaces; a ridge portion that is a protrusion between the pair of recesses and extends along the direction perpendicular to the first and second end surfaces; a band-shaped electrode disposed on the ridge portion; and a light guide layer formed on the second semiconductor layer between the ridge portion and the second end surface and guides light from the light emitting layer.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: October 10, 2017
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei Tazawa, Ji-Hao Liang
  • Patent number: 9735544
    Abstract: A surface emitting laser element includes: a semiconductor structure layer interposed between a first multi-layer reflector and a second multi-layer reflector; an insulating current confinement layer that is formed on a semiconductor layer of a second conductivity type and includes a first through-hole with a transparent electrode; the second multi-layer reflector formed on the current confinement layer and the transparent electrode; a heat conducting layer that is formed on the second multi-layer reflector and includes a second through-hole disposed coaxially with the first through-hole in the current confinement layer and having a minimum opening diameter smaller than an opening diameter of the first through-hole; and an emission color converting portion that is formed above the second through-hole in the heat conducting layer and includes phosphor.
    Type: Grant
    Filed: October 21, 2016
    Date of Patent: August 15, 2017
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei Tazawa, Ji-Hao Liang
  • Publication number: 20170149213
    Abstract: A vertical cavity light emitting device includes: a first multilayer film reflector; a semiconductor structure layer that is formed on the first multilayer film reflector and includes a semiconductor layer of a first conductivity type, an active layer, and a semiconductor layer of a second conductivity type opposite to the first conductivity type; an insulating current confinement layer formed on the semiconductor layer of the second conductivity type; a through opening formed in the current confinement layer; a transparent electrode for covering the through opening and the current confinement layer, the transparent electrode being in contact with the semiconductor layer of the second conductivity type through the through opening; a second multilayer film reflector formed on the transparent electrode; and a mixed composition layer formed to be in contact with an edge of the through opening and in which the current confinement layer and the transparent electrode are mixed.
    Type: Application
    Filed: November 9, 2016
    Publication date: May 25, 2017
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG, Seiichiro KOBAYASHI, Masaru TAKIZAWA, Keisuke NAKATA
  • Publication number: 20170125978
    Abstract: A surface emitting laser element includes: a semiconductor structure layer interposed between a first multi-layer reflector and a second multi-layer reflector; an insulating current confinement layer that is formed on a semiconductor layer of a second conductivity type and includes a first through-hole with a transparent electrode; the second multi-layer reflector formed on the current confinement layer and the transparent electrode; a heat conducting layer that is formed on the second multi-layer reflector and includes a second through-hole disposed coaxially with the first through-hole in the current confinement layer and having a minimum opening diameter smaller than an opening diameter of the first through-hole; and an emission color converting portion that is formed above the second through-hole in the heat conducting layer and includes phosphor.
    Type: Application
    Filed: October 21, 2016
    Publication date: May 4, 2017
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG
  • Publication number: 20170110851
    Abstract: A semiconductor light-emitting element includes a multilayer body including a first end surface and a second end surface which are opposed to each other, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are stacked; a pair of recesses that are formed on the second semiconductor layer, separated from the second end surface, and separated from each other in the direction parallel to the first and second end surfaces; a ridge portion that is a protrusion between the pair of recesses and extends along the direction perpendicular to the first and second end surfaces; a band-shaped electrode disposed on the ridge portion; and a light guide layer formed on the second semiconductor layer between the ridge portion and the second end surface and guides light from the light emitting layer.
    Type: Application
    Filed: October 14, 2016
    Publication date: April 20, 2017
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Komei TAZAWA, Ji-Hao LIANG
  • Patent number: 9496456
    Abstract: A semiconductor light emitting element includes: a pit formation layer formed on the first semiconductor layer and having a pyramidal pit; and an active layer formed on the pit formation layer and having a flat portion and an embedded portion which is formed so as to embed the pit. The active layer has a multi-quantum well structure having a well layer and a barrier layer laminated alternately in which each well layer and each barrier layer lie one upon another. The flat portion has a flat well portion corresponding to the well layer. The embedded portion has an embedded well portion corresponding to the well layer. The embedded well portion has a ring portion which is formed in an interface with the flat well portion so as to surround the threading dislocation. The ring portion has a band gap smaller than that of the flat well portion.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: November 15, 2016
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Mitsuyasu Kumagai, Ji-Hao Liang
  • Patent number: 9368678
    Abstract: A semiconductor light emitting element includes: a pit formation layer formed on a first semiconductor layer and having a pyramidal pit; an active layer formed on the pit formation layer and having an embedded portion formed so as to embed the pit. The active layer has a multi-quantum well structure having at least one pair of well layer and barrier layer laminated alternately. The embedded portion has at least one embedded well portion corresponding to the well layer respectively and at least one embedded barrier portion corresponding to the barrier layer respectively. Each of the embedded well portion and the embedded barrier portion is configured such that a second apex angle of the embedded well portion is smaller than a first apex angle of the embedded barrier portion wherein the embedded well portion is subsequently formed on the embedded barrier portion.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: June 14, 2016
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Takayoshi Yamane, Ji-Hao Liang, Mitsuyasu Kumagai, Shunya Ide
  • Patent number: 9368679
    Abstract: A semiconductor light emitting element includes: a pit formation layer having a pyramidal pit caused by a threading dislocation generated in the first semiconductor layer; an active layer; and an electron blocking layer formed on the active layer to cover the recess portion. The active layer is formed on the pit formation layer and having an embedded portion formed so as to embed the pit and a recess portion formed on a surface of the embedded portion to correspond to the pit. The recess portion of the active layer has an apex formed at a position existing in a layered direction of the active layer within the active layer.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: June 14, 2016
    Assignee: STANLEY ELECTRIC CO., LTD.
    Inventors: Takayoshi Yamane, Ji-Hao Liang
  • Publication number: 20160118537
    Abstract: A semiconductor light-emitting element comprises: a first semiconductor layer, an active layer having a multiple quantum well structure in which a plurality of well layers and a plurality of barrier layers are alternately layered, an electron block layer, and a second semiconductor layer. Among the barrier layers, an endmost barrier layer closest to the second semiconductor layer includes a first endmost barrier layer part and a second endmost barrier layer part formed on a side closer to the second semiconductor layer than the first endmost barrier layer part and having a larger band gap than that of the first endmost barrier layer part. The first endmost barrier layer part has a band gap that is larger than that of each of the well layers and is smaller than that of each barrier layer other than the endmost barrier layer.
    Type: Application
    Filed: October 8, 2015
    Publication date: April 28, 2016
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Mitsuyasu KUMAGAI, Ji-Hao LIANG
  • Publication number: 20160087145
    Abstract: A semiconductor light emitting element includes: a pit formation layer formed on the first semiconductor layer and having a pyramidal pit; and an active layer formed on the pit formation layer and having a flat portion and an embedded portion which is formed so as to embed the pit. The active layer has a multi-quantum well structure having a well layer and a barrier layer laminated alternately in which each well layer and each barrier layer lie one upon another. The flat portion has a flat well portion corresponding to the well layer. The embedded portion has an embedded well portion corresponding to the well layer. The embedded well portion has a ring portion which is formed in an interface with the flat well portion so as to surround the threading dislocation. The ring portion has a band gap smaller than that of the flat well portion.
    Type: Application
    Filed: August 28, 2015
    Publication date: March 24, 2016
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Mitsuyasu KUMAGAI, Ji-Hao LIANG
  • Publication number: 20160087147
    Abstract: A semiconductor light emitting element includes: a pit formation layer having a pyramidal pit caused by a threading dislocation generated in the first semiconductor layer; an active layer; and an electron blocking layer formed on the active layer to cover the recess portion. The active layer is formed on the pit formation layer and having an embedded portion formed so as to embed the pit and a recess portion formed on a surface of the embedded portion to correspond to the pit. The recess portion of the active layer has an apex formed at a position existing in a layered direction of the active layer within the active layer.
    Type: Application
    Filed: August 28, 2015
    Publication date: March 24, 2016
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Takayoshi YAMANE, Ji-Hao LIANG
  • Publication number: 20160087146
    Abstract: A semiconductor light emitting element includes: a pit formation layer formed on a first semiconductor layer and having a pyramidal pit; an active layer formed on the pit formation layer and having an embedded portion formed so as to embed the pit. The active layer has a multi-quantum well structure having at least one pair of well layer and barrier layer laminated alternately. The embedded portion has at least one embedded well portion corresponding to the well layer respectively and at least one embedded barrier portion corresponding to the barrier layer respectively. Each of the embedded well portion and the embedded barrier portion is configured such that a second apex angle of the embedded well portion is smaller than a first apex angle of the embedded barrier portion wherein the embedded well portion is subsequently formed on the embedded barrier portion.
    Type: Application
    Filed: August 28, 2015
    Publication date: March 24, 2016
    Applicant: STANLEY ELECTRIC CO., LTD.
    Inventors: Takayoshi YAMANE, Ji-Hao LIANG, Mitsuyasu KUMAGAI, Shunya IDE