Abstract: A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.

Abstract: A vehicle light which uses a laser light source device and has a shorter dimension in an optical axis direction than conventional vehicle lights. The vehicle light comprises a laser light source device and an optical system configured so as to form a predetermined light distribution pattern. The laser light source device includes: a cylindrical light-guiding part having a diffusing surface set in a region other than a light-introducing surface; a phosphor arranged in a light-emitting region on an outer circumferential surface of the light-guiding part; a reflective film arranged in a region of the light-guiding part other than the light-introducing surface and the light-emitting region; and a laser light source that outputs a laser beam which is introduced into the light-guiding part from the light-introducing surface and enters the phosphor. The light-guiding part and the laser light source are arranged adjacent to each other.

Abstract: (a) On a growth substrate, a void-containing layer that is made of a group III nitride compound semiconductor and contains voids is formed. (b) On the void-containing layer, an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids is formed. (c) On the n-type layer, an active layer made of a group III nitride compound semiconductor is formed. (d) On the active layer, a p-type layer made of a p-type group III nitride compound semiconductor is formed. (e) A support substrate is bonded above the p-type layer. (f) The growth substrate is peeled off at the boundary where the voids are produced. In the above step (a) or (b), the supply of at least part of the materials that form the layer is decreased, while heating, before the voids are closed.

Abstract: (a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong.

Abstract: A wavelength converting member radiates light having a wavelength different from that of laser light introduced into the wavelength converting member. The wavelength converting member has a phosphor layer that contains a phosphor therein. The phosphor layer has a laser light incidence surface capable of receiving the laser light. The wavelength converting member also has a high-refractive layer that is bonded to an opposite surface of the phosphor layer to the laser light incidence surface thereof. A refractive index of the high-refractive layer is higher than a refractive index of the phosphor layer. The high-refractive layer has concaves on at least either the bonding surface where the high-refractive layer is bonded to the phosphor layer or a light extraction surface that is opposite the bonding surface.

Abstract: A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer.

Abstract: A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.

Abstract: A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.

Abstract: There is provided a semiconductor light-emitting device manufacturing method which includes the steps of forming a semiconductor growth film on a growth substrate; forming a metal film on the semiconductor growth film; forming a multilayer insulating film on the metal film, the multilayer insulating film having at least a first insulating layer and a second insulating layer adjacent to each other; and forming a support member on the multilayer insulating film. Pinholes present in the first insulating layer are discontinuous with pinholes present in the second insulating layer at an interface between the first and the second insulating layers.

Abstract: A wavelength conversion structure includes a light guide formed of a light-transmissive member having a laser light incident port that allows the laser light to be introduced and a phosphor-containing layer that covers at least part of the surface of the light guide. The light guide has a light diffusing structure having asperities formed over the surface of the light guide except a laser light incident surface having the laser light incident port and a light reflecting film formed over the surface of the light guide along the asperities except the laser light incident port and the portion covered with the phosphor-containing layer.

Abstract: A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides.

Abstract: A vehicle light can prevent or suppress uneven luminance chromaticity or uneven intensity distribution of light caused by reflection of blue laser beams emitted from a laser light source and reflected by the surface of a metal plate located around fluorescent material. The vehicle light can include a metal plate, a fluorescent material provided on a surface of the metal plate. The fluorescent material can serve as a light source for emitting light beams as a result of excitation by a blue laser beam. A laser light source can be configured to emit the blue laser beam to be incident on the fluorescent material. A reflection suppressing member can be provided to cover the surface of the metal plate around the fluorescent material and can be configured to suppress the reflection of the blue laser beam emitted by the laser light source.

Abstract: There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.

Abstract: A plurality of protrusions is formed on the C-plane substrate with a corundum structure. A base film made of a III-V compound semiconductor including Ga and N is formed on the surface of the substrate. The surface of the base film is flatter than the surface of the substrate. A light emitting structure including Ga and N is disposed on the base film. The protrusions are regularly arranged in a first direction that is tilted by less than 15 degrees with respect to the a-axis of the base film and in a second direction that is orthogonal to the first direction. Each protrusion has two first parallel sides tilted by less than 15 degrees relative to an m-axis and two second parallel sides tilted by less than 15 degrees relative to the a-axis. An interval between the two second sides is wider than an interval between the two first sides.

Abstract: A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer.

Abstract: There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.

Abstract: A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.

Abstract: A substrate has first and second edges disposed in parallel and a principal surface connecting the first and second edges. An active layer is formed on the principal surface. A ridge-like region is disposed on the active layer along a path interconnecting a point on the first edge and a point on the second edge. The ridge-like region is made of semiconductor material having a refraction index smaller than a refraction index of the active layer, and defines a waveguide. The path is disposed along the principal surface and includes a first region on the side of the first edge and a second region on the side of the second edge. A first angle is taken between a normal to the first edge directing toward the principal surface and the first region. A second angle smaller than the first angle is taken between a normal to the second edge directing toward the principal surface and the second region. Electrodes inject current in a region of the active layer along the path.

Abstract: A light diffusion sheet receives light fluxes radiated from a light radiating element at a first plane of the light diffusion sheet and scatters or diffracts the received light fluxes, and radiates the scattered or diffracted light from an opposite second plane. A light distributing member distributes the light radiated from the second plane of the light diffusion sheet along some direction. A light radiating device is provided which has a relatively large light beam spot.