Abstract: A method of manufacturing a flash memory device may include forming a trench, defining at least a common source region, on a semiconductor substrate, forming a gate poly over the semiconductor substrate, performing an ion implantation process employing a first photoresist pattern and the gate poly as a mask, wherein the ion implantation process forms a source/drain junction on the semiconductor substrate, forming a recess common source region in the trench by using a second photoresist pattern, and performing an ion implantation process on the recess common source region.

Abstract: Disclosed is a 3D vehicle simulator system for an ECU embedded system comprising an external input apparatus 130, to which signals of one or more external sensors are inputted, an ECU embedded system 120 for processing and executing signals inputted form the external input apparatus 130, an external output apparatus 140 for receiving and outputting the output signals of the ECU embedding system 120, a vehicle simulator 110 for calculating at real time the signals inputted from the ECU embedded system 120, and for 3D-modeling and outputting the status of the vehicle, and a display 150 for displaying the 3D-modeled vehicle outputted form the vehicle simulator 110.

Abstract: A method of manufacturing a flash memory device may include forming a trench, defining at least a common source region, on a semiconductor substrate, forming a gate poly over the semiconductor substrate, performing an ion implantation process employing a first photoresist pattern and the gate poly as a mask, wherein the ion implantation process forms a source/drain junction on the semiconductor substrate, forming a recess common source region in the trench by using a second photoresist pattern, and performing an ion implantation process on the recess common source region.

Abstract: A CMOS image sensor and a method of fabricating the same. The CMOS image sensor may minimize disappearance of electrons generated by light without transmission of electrons to a transfer gate. A method of manufacturing a CMOS image sensor may include forming a trench over an isolation region of a semiconductor substrate to define an active region including a photodiode region and a transistor region. The method may include forming first conductivity-type ion implanted regions over a trench side wall of a photodiode region and over a region adjacent to the transistor region. The method may include forming second conductivity-type ion implanted regions between a first conductivity-type ion implanted region and a trench, and between a lower part of a transistor region and a first conductivity-type ion implanted region. The method may include forming an isolation layer, forming a gate electrode and a spacer, and/or forming a photodiode.

Abstract: Provided are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device comprises two gate electrodes on a semiconductor substrate between device isolation regions, a common source region on the semiconductor substrate between the two gate electrodes, a drain region on the semiconductor substrate at outer sides of the two gate electrodes, a spacer on the drain region and on outer sidewalls of the two gate electrodes, a third oxide layer on inner sidewalls of the two gate electrodes, and a silicide layer on the common source region.

Abstract: Provided is a method in which a photodiode layer is formed on a metal interconnection layer, and a hard mask layer is formed on the photodiode layer. Then, a photoresist pattern is formed on the hard mask layer to define a contact hole region, and a first hole is formed in the hard mask layer through an etching process. Next, an ion implantation etching layer is formed in the photodiode layer using the photoresist pattern as an ion implantation mask, and a second hole is formed by etching the ion implantation etching layer. A third hole is formed to expose the metal interconnection by etching a region of the metal interconnection layer corresponding to the second hole.

Abstract: A method for manufacturing an image sensor includes forming an isolation area in a semiconductor substrate, forming a plurality of gate insulating layers and a plurality of gates over a transistor area of the semiconductor substrate, forming a photodiode over the semiconductor substrate between the gates and the isolation area, forming a nitride layer over the semiconductor substrate such that tensile stress is applied to the transistor area of the semiconductor substrate, forming a floating diffusion layer over the semiconductor substrate between the gates, and removing the nitride layer over the photodiode, and forming an oxide layer over the photodiode.

Abstract: A method for fabricating a semiconductor device having a CMOS transistor including a gate electrode with low resistance. In the CMOS transistor in accordance with embodiments, the impurities implanted into the gate electrode have a higher density than the impurities implanted into the source/drain region. Embodiments also reduce the amount of impurities included in channel regions.

Abstract: Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a first pixel including a first photodiode and a first gate; a second pixel adjacent the first pixel and including a second photodiode and a second gate; and a barrier layer between the first photodiode and the second photodiode. The barrier layer can be formed by implanting ions into a semiconductor substrate at a region between adjacent photodiodes. A shallow trench isolation (STI) can be omitted in the regions between adjacent photodiodes by using the ion-implanted barrier layer to isolate the photodiodes from each other.

Abstract: A semiconductor device and a method for manufacturing the device are disclosed. The device, and the method for making the device, includes the steps of forming a gate oxide film on a semiconductor substrate; forming a gate poly silicon layer on the gate oxide film; and implanting deuterium ions over the semiconductor substrate including the gate poly silicon layer.

Abstract: Disclosed is a vehicle management system using a wireless network system the system comprising, a WCDMA service unit having a specified ID and obtaining access to a network wirelessly, an ECU system associated with the WCDMA service module for controlling all kinds of interfaces in a vehicle, a service provider for providing various services when the WCDMA service module is connected to the wireless network, and a user having the services through non-wireless or wireless communication inside or outside of the vehicle.