Patents by Inventor Ji Man HONG

Ji Man HONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190267091
    Abstract: An operating method of a memory system that includes a plural-level cell memory block capable of storing N-bit data in a single memory cell includes accessing a plural-level cell memory block in an N-bit cell mode, determining a degree of disturbance of the plural-level cell memory block, designating one or more memory cells in an erase state included in an open memory area of the plural-level cell memory block as an M-bit group, where M is an integer smaller than N, according to a result of the determination, and accessing the M-bit group in an M-bit cell mode.
    Type: Application
    Filed: September 17, 2018
    Publication date: August 29, 2019
    Inventor: Ji-Man HONG
  • Publication number: 20190237149
    Abstract: A semiconductor memory device and a method of operating the same are provided. The method of operating the semiconductor memory device includes determining a target word line coupled to an over-programmed memory cell, backing up data stored in memory cells coupled to the target word line in a second memory area, wherein the se second memory area is different from a first memory area where the memory cells coupled to the target word line are disposed, and applying a stepped-up read pass voltage to the target word line when a read operation is performed on a selected memory cell in a memory block coupled to the target word line, wherein the selected memory cell is different from the over-programmed memory cell. Therefore, the operation reliability of the semiconductor memory device is improved.
    Type: Application
    Filed: April 12, 2019
    Publication date: August 1, 2019
    Inventor: Ji Man HONG
  • Publication number: 20190189217
    Abstract: A memory system may include performing a first read operation on first data stored in first memory cells coupled to a first word line, performing an error correction operation on the first data, performing an interference program operation on second memory cells coupled to a second word line when the error correction operation fails, and performing a second read operation on the first data stored in the first memory cells after performing the interference program operation.
    Type: Application
    Filed: August 6, 2018
    Publication date: June 20, 2019
    Inventor: Ji Man HONG
  • Publication number: 20190175378
    Abstract: Provided is an elastic band for correcting a joint deformity and enhancing a joint function, the elastic band including: a first band to be attached to an outer part of a joint of a finger or toe and to the back of a hand or the top of a foot, and having a strip shape; a second band to be attached to an inner part of a last joint of the finger or toe while surrounding the inner part, and having a width increasing towards an end to surround side parts of the finger or toe together; and a connecting portion disposed between the first band and the second band to integrally connect the first band and the second band, and having a width gradually decreasing and then increasing from the first band towards the second band, and a mounting device of the elastic band.
    Type: Application
    Filed: July 13, 2017
    Publication date: June 13, 2019
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventor: Ji Man HONG
  • Patent number: 10304548
    Abstract: A semiconductor memory device and a method of operating the same are provided. The method of operating the semiconductor memory device includes determining a target word line coupled to an over-programmed memory cell, backing up data stored in memory cells coupled to the target word line in a second memory area, wherein the se second memory area is different from a first memory area where the memory cells coupled to the target word line are disposed, and applying a stepped-up read pass voltage to the target word line when a read operation is performed on a selected memory cell in a memory block coupled to the target word line, wherein the selected memory cell is different from the over-programmed memory cell. Therefore, the operation reliability of the semiconductor memory device is improved.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: May 28, 2019
    Assignee: SK HYNIX INC.
    Inventor: Ji Man Hong
  • Publication number: 20190156904
    Abstract: Provided herein may be a method of operating a semiconductor memory device. The method of operating a semiconductor memory device may include programming selected memory cells with first page data, and programming the selected memory cells with second page data and programming a flag cell with flag data according to a foggy-fine programming scheme. The flag data may indicate whether data programmed according to the program operation is the first page data or the second page data. An operation of programming the flag cell with the flag data may be initiated after foggy programming of the second page data is completed.
    Type: Application
    Filed: January 28, 2019
    Publication date: May 23, 2019
    Applicant: SK hynix Inc.
    Inventor: Ji Man HONG
  • Publication number: 20190121580
    Abstract: A data storage device includes a nonvolatile memory device configured to include a plurality of pages; and a controller configured to control an operation of the nonvolatile memory device, wherein the controller stores first data in a first least significant bit (LSB) page, stores the first data in a first most significant bit (MSB) page which is coupled to the same first word line as the first LSB page, when a first condition is satisfied, and stores second data in the first MSB page after the first data is stored in the first MSB page.
    Type: Application
    Filed: June 4, 2018
    Publication date: April 25, 2019
    Inventor: Ji Man HONG
  • Patent number: 10248503
    Abstract: A data storage device includes a nonvolatile memory device including a first page group coupled to a first word line and a second page group coupled to a second word line, which is subsequent to the first word line in order of a write operation; and a controller suitable for, after an abnormal power-off during a write operation to the first page group, copying a first data stored in a weak page of the first page group to a stable page of the second page group when a first error correction operation to data stored in the first page group is a success.
    Type: Grant
    Filed: April 11, 2017
    Date of Patent: April 2, 2019
    Assignee: SK hynix Inc.
    Inventor: Ji Man Hong
  • Publication number: 20190080775
    Abstract: A semiconductor memory device and a method of operating the same are provided. The method of operating the semiconductor memory device includes determining a target word line coupled to an over-programmed memory cell, backing up data stored in memory cells coupled to the target word line in a second memory area, wherein the se second memory area is different from a first memory area where the memory cells coupled to the target word line are disposed, and applying a stepped-up read pass voltage to the target word line when a read operation is performed on a selected memory cell in a memory block coupled to the target word line, wherein the selected memory cell is different from the over-programmed memory cell. Therefore, the operation reliability of the semiconductor memory device is improved.
    Type: Application
    Filed: January 2, 2018
    Publication date: March 14, 2019
    Inventor: Ji Man HONG
  • Publication number: 20190037938
    Abstract: A functional glove for holding an ultrasonic probe includes: a body for encompassing the thumb and at least a part of the back of the hand of an inspector operating the ultrasonic probe; a probe fixing part coupled to the body so as to encompass and fix the fingers of the inspector and the ultrasonic probe; and a wrist protection part connected to the body so as to encompass and protect the wrist of the inspector.
    Type: Application
    Filed: June 15, 2016
    Publication date: February 7, 2019
    Applicant: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventor: Ji Man HONG
  • Patent number: 10192628
    Abstract: Provided herein may be a semiconductor memory device and a method of operating the same. The method of operating a semiconductor memory device may include performing a program operation on a Least Significant Bit (LSB) of a page, and performing a program operation on a flag cell and a Most Significant Bit (MSB) of the page based on an operation of verifying at least one of a plurality of program states. The data stored in the flag cell may be data indicating whether data programmed according to the program operation is LSB data or MSB data.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: January 29, 2019
    Assignee: SK hynix Inc.
    Inventor: Ji Man Hong
  • Patent number: 10102059
    Abstract: A method for operating a data storage device including a plurality of pages includes performing a read operation to a first page of the nonvolatile memory device according to a read voltage; adjusting the read voltage based on a number of error bits in the read-out data according to the read voltage; performing the read operation to the first page according to the adjusted read voltage; and performing a re-program operation to the first page based on a number of on cells as a result of the read operation according to the adjusted read voltage.
    Type: Grant
    Filed: May 4, 2016
    Date of Patent: October 16, 2018
    Assignee: SK Hynix Inc.
    Inventor: Ji Man Hong
  • Publication number: 20180181460
    Abstract: A data storage device includes a nonvolatile memory device including a first page group coupled to a first word line and a second page group coupled to a second word line, which is subsequent to the first word line in order of a write operation; and a controller suitable for, after an abnormal power-off during a write operation to the first page group, copying a first data stored in a weak page of the first page group to a stable page of the second page group when a first error correction operation to data stored in the first page group is a success.
    Type: Application
    Filed: April 11, 2017
    Publication date: June 28, 2018
    Inventor: Ji Man HONG
  • Patent number: 9956265
    Abstract: The present invention relates to a composition comprising erythropoietin (EPO) as an active ingredient for aiding surgical procedures for treating ischemic vascular diseases. The present invention also relates to a method for treating ischemic vascular diseases using a combination of the composition and the invasive procedure for sufficient disruption of the physical barriers for new neovascularization. The composition for aiding surgical or invasive procedures according to the present invention would be beneficial for the success rate and safety issue of a variety of surgical procedures such as minimally invasive operations performed on a patient suffering from a variety of cerebral ischemic vascular diseases including ischemic stroke and moyamoya disease, and can be widely used in the treatment of a variety of ischemic vasculopathies in cardiac or peripheral artery system.
    Type: Grant
    Filed: April 26, 2012
    Date of Patent: May 1, 2018
    Assignee: AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventor: Ji Man Hong
  • Patent number: 9899094
    Abstract: A nonvolatile memory device includes a memory block including a plurality of memory cells which are coupled to a plurality of word lines; and a control unit configured to perform a read operation in response to a read command for target memory cells which are coupled to a target word line, wherein the control unit performs the read operation by applying a read bias voltage to the target word line, applying a first pass bias to a monitoring word line, applying a second pass bias to one or more adjacent word lines adjacent to the target word line, and applying a third pass bias to remaining word lines.
    Type: Grant
    Filed: June 22, 2016
    Date of Patent: February 20, 2018
    Assignee: SK Hynix Inc.
    Inventor: Ji Man Hong
  • Patent number: 9778864
    Abstract: A data storage device may include: a nonvolatile memory device comprising a plurality of memory blocks, each having a plurality of pages, wherein each of the pages is divided into a plurality of segments having predetermined segment offset values, and the plurality of segments are grouped into a plurality of segment groups, each comprising segments having the same segment offset value; and a controller suitable for storing data in a first segment group among the plurality of segment groups until the first segment group includes no more empty segments.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: October 3, 2017
    Assignee: SK Hynix Inc.
    Inventor: Ji Man Hong
  • Publication number: 20170221570
    Abstract: A nonvolatile memory device includes a memory block including a plurality of memory cells which are coupled to a plurality of word lines; and a control unit configured to perform a read operation in response to a read command for target memory cells which are coupled to a target word line, wherein the control unit performs the read operation by applying a read bias voltage to the target word line, applying a first pass bias to a monitoring word line, applying a second pass bias to one or more adjacent word lines adjacent to the target word line, and applying a third pass bias to remaining word lines.
    Type: Application
    Filed: June 22, 2016
    Publication date: August 3, 2017
    Inventor: Ji Man HONG
  • Publication number: 20170091039
    Abstract: A method for operating a data storage device including a plurality of pages includes performing a read operation to a first page of the nonvolatile memory device according to a read voltage; adjusting the read voltage based on a number of error bits in the read-out data according to the read voltage; performing the read operation to the first page according to the adjusted read voltage; and performing a re-program operation to the first page based on a number of on cells as a result of the read operation according to the adjusted read voltage.
    Type: Application
    Filed: May 4, 2016
    Publication date: March 30, 2017
    Inventor: Ji Man HONG
  • Patent number: 9575839
    Abstract: A data storage device includes a nonvolatile memory apparatus including a memory block including a plurality of pages; and a processor suitable for writing write data in target pages of the memory block, and backing up special management data of the write data in at least one backup page of the memory block.
    Type: Grant
    Filed: March 4, 2015
    Date of Patent: February 21, 2017
    Assignee: SK Hynix Inc.
    Inventor: Ji Man Hong
  • Patent number: 9570187
    Abstract: A data storage device may include: a nonvolatile memory device including a memory block; and a controller suitable for controlling the nonvolatile memory device to perform a string read operation on the memory block, and estimating a data storage rate of the memory block based on string read data acquired through the string read operation. When performing the string read operation, the nonvolatile memory device may apply the same read voltage to a plurality of word lines included in the memory block at the same time, acquire the string read data from the memory block according to the read voltage, and transmit the string read data to the controller.
    Type: Grant
    Filed: October 6, 2015
    Date of Patent: February 14, 2017
    Assignee: SK Hynix Inc.
    Inventor: Ji Man Hong